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ContactIXFP4N100PM
MOSFET (Metal Oxide) N-Channel 3.3 Ω @ 2A, 10V ±20V 1456pF @ 25V 26nC @ 10V 1000V TO-220-3 Full Pack, Isolated Tab
- Manufacturer: IXYS
- NO: 415-IXFP4N100PM
- Package: TO-220-3 Full Pack, Isolated Tab
- Datasheet:
- Stock: 338
- Description: MOSFET (Metal Oxide) N-Channel 3.3 Ω @ 2A, 10V ±20V 1456pF @ 25V 26nC @ 10V 1000V TO-220-3 Full Pack, Isolated Tab (Kg)
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| Parameters | |
|---|---|
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 40W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.3 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 6V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1456pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| JEDEC-95 Code | TO-220AB |
| Drain Current-Max (Abs) (ID) | 2.5A |
| Pulsed Drain Current-Max (IDM) | 8A |
| DS Breakdown Voltage-Min | 1000V |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Factory Lead Time | 26 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2008 |
| Part Status | Active |
| Number of Terminations | 3 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
