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MOSFET (Metal Oxide) N-Channel Tube 390m Ω @ 12A, 10V ±20V 8700pF @ 25V 267nC @ 10V 1000V SOT-227-4, miniBLOC
- Manufacturer: IXYS
- NO: 415-IXFN24N100
- Package: SOT-227-4, miniBLOC
- Datasheet:
- Stock: 84
- Description: MOSFET (Metal Oxide) N-Channel Tube 390m Ω @ 12A, 10V ±20V 8700pF @ 25V 267nC @ 10V 1000V SOT-227-4, miniBLOC (Kg)
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 21 ns |
| Turn-Off Delay Time | 75 ns |
| Reverse Recovery Time | 250 ns |
| Continuous Drain Current (ID) | 24A |
| Threshold Voltage | 5.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 1kV |
| Pulsed Drain Current-Max (IDM) | 96A |
| Dual Supply Voltage | 1kV |
| Recovery Time | 250 ns |
| Isolation Voltage | 2.5kV |
| Nominal Vgs | 5.5 V |
| Height | 9.6mm |
| Length | 38.23mm |
| Width | 25.42mm |
| REACH SVHC | No SVHC |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Mount | Chassis Mount, Panel, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 3 |
| Weight | 40g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | HiPerFET™ |
| Published | 2000 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 4 |
| Termination | Screw |
| ECCN Code | EAR99 |
| Resistance | 390mOhm |
| Terminal Finish | Nickel (Ni) |
| Additional Feature | AVALANCHE RATED, UL RECOGNIZED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 1kV |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Current Rating | 24A |
| Pin Count | 4 |
| JESD-30 Code | R-PUFM-X4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 568W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 600W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 390m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 24A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 267nC @ 10V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
