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ContactIRF730APBF
IRF730APBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi
- Manufacturer: Vishay Siliconix
- NO: 880-IRF730APBF
- Package: TO-220-3
- Datasheet:
- Stock: 6568
- Description: IRF730APBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 5.5A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 74W Tc |
| Element Configuration | Single |
| Power Dissipation | 74W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Rise Time | 22ns |
| Drain to Source Voltage (Vdss) | 400V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 5.5A |
| Threshold Voltage | 4.5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 400V |
| Input Capacitance | 600pF |
| Recovery Time | 550 ns |
| Drain to Source Resistance | 1Ohm |
| Rds On Max | 1 Ω |
| Nominal Vgs | 4.5 V |
| Height | 9.01mm |
| Length | 10.41mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Weight | 6.000006g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 1Ohm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 400V |
IRF730APBF Description
The IRF730APBF is a Power MOSFET. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.
IRF730APBF Features
Fully Characterized Capacitance and Avalanche Voltage and Current
Effective Coss Specified
Compliant to RoHS Directive 2002/95/EC
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
IRF730APBF Applications
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
