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MOSFET (Metal Oxide) N-Channel Tube 240mOhm @ 8.4A, 10V ±20V 1060pF @ 25V 54nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Vishay Siliconix
- NO: 880-IRF644NSPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 17434
- Description: MOSFET (Metal Oxide) N-Channel Tube 240mOhm @ 8.4A, 10V ±20V 1060pF @ 25V 54nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Weight | 1.437803g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 250V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 14A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 150W Tc |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 8.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 14A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| Rise Time | 21ns |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 14A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 250V |
| Input Capacitance | 1.06nF |
| Drain to Source Resistance | 240mOhm |
| Rds On Max | 240 mΩ |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
