IRCZ44PBF

MOSFET (Metal Oxide) N-Channel Tube 28m Ω @ 31A, 10V ±20V 2500pF @ 25V 95nC @ 10V TO-220-5


  • Manufacturer: Vishay Siliconix
  • NO: 880-IRCZ44PBF
  • Package: TO-220-5
  • Datasheet: pdf
  • Stock: 14976
  • Description: MOSFET (Metal Oxide) N-Channel Tube 28m Ω @ 31A, 10V ±20V 2500pF @ 25V 95nC @ 10V TO-220-5 (Kg)

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SPECIFICATIONS

Parameters
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 50A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
JESD-30 Code R-PSFM-T5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 86 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.028Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 30 mJ
FET Feature Current Sensing
Height 9.02mm
Length 10.67mm
Width 4.83mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-5
Weight 3.000003g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power

In Stock

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