GAP3SLT33-214

Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 2.2V @ 300mA -55°C~175°C 10μA @ 3300V Cut Tape (CT) DO-214AA, SMB Surface Mount


  • Manufacturer: GeneSiC Semiconductor
  • NO: 347-GAP3SLT33-214
  • Package: DO-214AA, SMB
  • Datasheet: pdf
  • Stock: 4132
  • Description: Silicon Carbide Schottky Diode Rectifier No Recovery Time > 500mA (Io) 2.2V @ 300mA -55°C~175°C 10μA @ 3300V Cut Tape (CT) DO-214AA, SMB Surface Mount (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Surface Mount YES
Number of Pins 2
Weight 93.099834mg
Packaging Cut Tape (CT)
Published 2015
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Subcategory Rectifier Diodes
Max Power Dissipation 25W
Base Part Number GAP3SLT33
Number of Elements 1
Element Configuration Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 10μA @ 3300V
Voltage - Forward (Vf) (Max) @ If 2.2V @ 300mA
Forward Current 300mA
Operating Temperature - Junction -55°C~175°C
Output Current-Max 0.3A
Voltage - DC Reverse (Vr) (Max) 3300V
Current - Average Rectified (Io) 300mA DC
Forward Voltage 4V
Max Reverse Voltage (DC) 3.3kV
Average Rectified Current 300mA
Reverse Recovery Time 0 s
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 3.3kV
Capacitance @ Vr, F 42pF @ 1V 1MHz
Max Forward Surge Current (Ifsm) 10A
Natural Thermal Resistance 1.42 °C/W
REACH SVHC No SVHC
RoHS Status RoHS Compliant

In Stock

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