CRZ12(TE85L,Q,M)

CRZ12(TE85L,Q,M) datasheet pdf and Diodes - Zener - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-CRZ12(TE85L,Q,M)
  • Package: SOD-123F
  • Datasheet: pdf
  • Stock: 605
  • Description: CRZ12(TE85L,Q,M) datasheet pdf and Diodes - Zener - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Max Reverse Leakage Current 10μA
Impedance-Max 30Ohm
Zener Voltage 12V
Zener Current 10mA
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123F
Number of Pins 2
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Tolerance ±10%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 700mW
Impedance 30Ohm
Element Configuration Single
Current - Reverse Leakage @ Vr 10μA @ 8V
Power Dissipation 700mW
Voltage - Forward (Vf) (Max) @ If 1V @ 200mA

CRZ12(TE85L,Q,M) Overview


This electrical device requires reverse leakage current of 10μA @ 8V.A maximum reverse leakage current is reached at 10μA.In terms of design, diode has a high degree of flexibildiodey thanks to diodes 10mA zener current.For operation, diode reaches 1V @ 200mA at the maximum voltage - Forward (Vf).

CRZ12(TE85L,Q,M) Features


reverse leakage current of 10μA @ 8V
10μA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 10μA
the zener current of 10mA

CRZ12(TE85L,Q,M) Applications


There are a lot of Toshiba Semiconductor and Storage CRZ12(TE85L,Q,M) applications of zener single diodes.

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