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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| XP262N7002TR-G | Torex Semiconductor Ltd |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/torexsemiconductorltd-xp262n7002trg-datasheets-1056.pdf | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | 60V | 400mW Ta | N-Channel | 30pF @ 20V | 1.6 Ω @ 100mA, 10V | 2.1V @ 250μA | 300mA Ta | 720pC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN601WK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn601wk7-datasheets-1266.pdf | 60V | 300mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Lead Free | 3 | 15 Weeks | 6.010099mg | No SVHC | 3 | yes | EAR99 | ESD PROTECTION | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 200mW | 1 | FET General Purpose Powers | 300mA | 20V | SILICON | SWITCHING | 200mW Ta | 2Ohm | 5 pF | 60V | N-Channel | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 300mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| RV1C001ZPT2L | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/rohmsemiconductor-rv1c001zpt2l-datasheets-1082.pdf | 3-SMD, No Lead | Lead Free | 3 | 16 Weeks | EAR99 | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | 100mW | 1 | Other Transistors | R-XBCC-N3 | 62ns | 137 ns | 325 ns | 100mA | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 100mW Ta | 0.1A | -20V | P-Channel | 15pF @ 10V | 3.8 Ω @ 100mA, 4.5V | 1V @ 100μA | 100mA Ta | 1.2V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| PMZ550UNEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmz550uneyl-datasheets-1094.pdf | SC-101, SOT-883 | 3 | 8 Weeks | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 590mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 310mW Ta 1.67W Tc | 0.59A | 0.67Ohm | N-Channel | 30.3pF @ 15V | 670m Ω @ 590mA, 4.5V | 950mV @ 250μA | 590mA Ta | 1.1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K35CT,L3F | Toshiba Semiconductor and Storage | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SC-101, SOT-883 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 100mW Ta | N-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA Ta | 1.2V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSU002N06T106 | ROHM Semiconductor | $0.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsu002n06t106-datasheets-0919.pdf | SC-70, SOT-323 | Lead Free | 3 | 3 | yes | EAR99 | No | DUAL | GULL WING | 260 | 3 | 10 | 1 | FET General Purpose Power | 3.5 ns | 5ns | 28 ns | 18 ns | 250mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 200mW Ta | 0.25A | N-Channel | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 250mA Ta | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SSM3K15ACTC,L3F | Toshiba Semiconductor and Storage | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SC-101, SOT-883 | 12 Weeks | 30V | 500mW Ta | N-Channel | 13.5pF @ 3V | 3.6 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB290UNE,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmzb290un315-datasheets-0928.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | Tin | No | e3 | YES | BOTTOM | 260 | 3 | Single | 30 | 715mW | 1 | 6 ns | 4ns | 31 ns | 86 ns | 1A | 8V | 20V | SILICON | DRAIN | SWITCHING | 360mW Ta 2.7W Tc | 1A | 20V | N-Channel | 83pF @ 10V | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 1A Ta | 0.68nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| XP231P0201TR-G | Torex Semiconductor Ltd | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/torexsemiconductorltd-xp231p0201trg-datasheets-0941.pdf | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | 30V | 400mW Ta | P-Channel | 34pF @ 10V | 5 Ω @ 100mA, 4.5V | 1.2V @ 250μA | 200mA Ta | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTK3139PT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntk3139pt1g-datasheets-6429.pdf | SOT-723 | Lead Free | 3 | 7 Weeks | 380mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 3 | Single | 310mW | 1 | Other Transistors | 9 ns | 5.8ns | 5.8 ns | 32.7 ns | -780mA | 6V | SILICON | SWITCHING | 20V | 310mW Ta | 0.66A | 1.2A | -20V | P-Channel | 170pF @ 16V | 480m Ω @ 780mA, 4.5V | 1.2V @ 250μA | 660mA Ta | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||
| RSC002P03T316 | ROHM Semiconductor | $0.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 16 Weeks | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 250mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 200mW Ta | 0.25A | P-Channel | 30pF @ 10V | 1.4 Ω @ 250mA, 10V | 2.5V @ 1mA | 250mA Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMZB600UNEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmzb600uneyl-datasheets-0943.pdf | 3-XFDFN | 3 | 8 Weeks | 470mOhm | 3 | BOTTOM | NO LEAD | 3 | 1 | 600mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 360mW Ta 2.7W Tc | 0.6A | N-Channel | 21.3pF @ 10V | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 600mA Ta | 0.7nC @ 4.5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2805PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf2805pbf-datasheets-1008.pdf | 55V | 75A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.7Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 330W | 1 | FET General Purpose Power | 14 ns | 120ns | 110 ns | 68 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 330W Tc | TO-220AB | 120 ns | 700A | 55V | N-Channel | 5110pF @ 25V | 4 V | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 75A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| PMZB290UN,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmzb290un315-datasheets-0928.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | No | e3 | Tin (Sn) | YES | BOTTOM | 3 | 1 | 4.5 ns | 10ns | 5 ns | 18.5 ns | 1A | 8V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 360mW Ta 2.7W Tc | 1A | N-Channel | 83pF @ 10V | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 1A Ta | 0.68nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SSM3K7002KF,LF | Toshiba Semiconductor and Storage | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | unknown | 400mA | 60V | 270mW Ta | N-Channel | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 400mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84-HF | Comchip Technology | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-bss84hf-datasheets-1021.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 50V | 225mW Ta | P-Channel | 30pF @ 5V | 10 Ω @ 100mA, 5V | 2V @ 1mA | 130mA Ta | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84AKMB,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/nexperiausainc-bss84akmb315-datasheets-0792.pdf | 3-XFDFN | 8 Weeks | 3 | Tin | e3 | 3 | Single | 715mW | 1 | 13 ns | 11ns | 25 ns | 48 ns | 230mA | 20V | -50V | 50V | 360mW Ta 2.7W Tc | -50V | P-Channel | 36pF @ 25V | 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 230mA Ta | 0.35nC @ 5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FCH47N60F-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch47n60ff085-datasheets-0854.pdf | TO-247-3 | 3 | 6.39g | 3 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | not_compliant | NOT SPECIFIED | FCH47N60 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 110 ns | 160ns | 125 ns | 540 ns | 47A | 30V | SILICON | SWITCHING | 600V | 600V | 417W Tc | 0.075Ohm | 810 mJ | N-Channel | 8000pF @ 25V | 75m Ω @ 47A, 10V | 5V @ 250μA | 47A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SSM3K16CT,L3F | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSIV | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SC-101, SOT-883 | 12 Weeks | 20V | 100mW Ta | N-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH6021SPSQ-13 | Diodes Incorporated | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh6021spsq13-datasheets-0884.pdf | 8-PowerTDFN | 5 | 17 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 55A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.6W Ta 53W Tc | 64 mJ | N-Channel | 1016pF @ 30V | 23m Ω @ 12A, 10V | 3V @ 250μA | 55A Tc | 19.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RUC002N05T116 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | 10 | 1 | FET General Purpose Power | 4 ns | 6ns | 55 ns | 15 ns | 200mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 200mW Ta | 0.2A | 2.4Ohm | N-Channel | 25pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 1V @ 1mA | 200mA Ta | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| VS-FC270SA20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfc270sa20-datasheets-0697.pdf | SOT-227-4, miniBLOC | 20 Weeks | SOT-227 | 200V | 937W Tc | N-Channel | 16500pF @ 100V | 4.7mOhm @ 200A, 10V | 4.3V @ 1mA | 287A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2372DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2372dst1ge3-datasheets-0645.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 13 Weeks | 43mOhm | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 960mW Ta 1.7W Tc | TO-236AB | 5.3A | N-Channel | 288pF @ 15V | 33m Ω @ 3A, 10V | 2.5V @ 250μA | 4A Ta 5.3A Tc | 8.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM3J35AFS,LF | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SC-75, SOT-416 | 3 | 12 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | 150mW Ta | 0.25A | 0.0021Ohm | P-Channel | 42pF @ 10V | 1.4 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 1.2V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K44MFV,L3F | Toshiba Semiconductor and Storage | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-723 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 150mW Ta | N-Channel | 8.5pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF35N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw35n65m5-datasheets-9852.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 98MOhm | 3 | No | e3 | Matte Tin (Sn) - annealed | STF35N | 3 | Single | 40W | 1 | FET General Purpose Power | 60 ns | 12ns | 16 ns | 60 ns | 27A | 25V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 800 mJ | 650V | N-Channel | 3750pF @ 100V | 98m Ω @ 13.5A, 10V | 5V @ 250μA | 27A Tc | 83nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IPW60R037CSFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 18 Weeks | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZ290UNE2YL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmz290une2yl-datasheets-0761.pdf | SC-101, SOT-883 | 3 | 8 Weeks | 3 | Tin | BOTTOM | NO LEAD | 3 | 1 | 6 ns | 10ns | 4 ns | 11 ns | 1.2A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 350mW Ta 5.43W Tc | N-Channel | 46pF @ 10V | 320m Ω @ 1.2A, 4.5V | 950mV @ 250μA | 1.2A Ta | 1.4nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM3J36FS,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SC-75, SOT-416 | 12 Weeks | 330mA | 20V | 150mW Ta | P-Channel | 43pF @ 10V | 1.31 Ω @ 100mA, 4.5V | 1V @ 1mA | 330mA Ta | 1.2nC @ 4V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RND030N20TL | ROHM Semiconductor | $0.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | EAR99 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 850mW Ta 20W Tc | 3A | 0.87Ohm | N-Channel | 270pF @ 25V | 870m Ω @ 1.5A, 10V | 5.2V @ 1mA | 3A Tc | 6.7nC @ 10V | 10V | ±30V |
