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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-ETH3007-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vseth3007m3-datasheets-6965.pdf | TO-220-2 | 14 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 37ns | Standard | 650V | 30μA @ 650V | 2.1V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8TQ100STRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs8tq100strlm3-datasheets-6969.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 175°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 550μA | Schottky | 100V | 8A | 230A | 1 | 500pF @ 5V 1MHz | 100V | 550μA @ 80V | 720mV @ 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 8TQ100 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | 16 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 400pF @ 5V 1MHz | 100V | 1mA @ 100V | 750mV @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UD1006FR-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-ud1006frh-datasheets-6870.pdf | TO-220-2 | Lead Free | 2 | 4 Weeks | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | NO | 2 | Single | 1 | 10A | 120A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 600V | 120A | 150 ns | 100 ns | Standard | 600V | 10A | 1 | 100μA @ 600V | 1.3V @ 10A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| IDW30G65C5FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-idw30g65c5fksa1-datasheets-6931.pdf | TO-247-3 | PG-TO247-3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 860pF @ 1V 1MHz | 650V | 1.1mA @ 650V | 1.7V @ 30A | 30A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-15ETL06-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs15etl06m3-datasheets-6873.pdf | TO-220-2 | 14 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | Standard | 600V | 10μA @ 600V | 1.05V @ 15A | 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FERD20M60ST | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-ferd20m60sr-datasheets-3536.pdf | TO-220-3 | 3 | 15 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE | SINGLE | NOT SPECIFIED | FERD20 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T3 | 20A | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 230μA | TO-220AB | FERD (Field Effect Rectifier Diode) | 60V | 20A | 1 | 230μA @ 60V | 560mV @ 20A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB1060-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 22 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1060 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 950mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| IDH12G65C5XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-idh12g65c5xksa1-datasheets-6887.pdf | TO-220-2 | PG-TO220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 360pF @ 1V 1MHz | 650V | 190μA @ 650V | 1.7V @ 12A | 12A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-15ETX06-M3 | Vishay Semiconductor Diodes Division | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs15etx06m3-datasheets-6888.pdf | TO-220-2 | 14 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | Standard | 600V | 50μA @ 600V | 3.2V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDK12G65C5XTMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-idk12g65c5xtma1-datasheets-6892.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 360pF @ 1V 1MHz | 650V | 2.1mA @ 650V | 1.8V @ 12A | 12A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR40250G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-mbrf40250tg-datasheets-5726.pdf | 250V | 40A | TO-220-2 | 10.29mm | 9.27mm | 4.82mm | Lead Free | 2 | 7 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | Standard | NO | 260 | MBR40250 | 2 | Single | 40 | 1 | Rectifier Diodes | 40A | 40A | 970mV | 150A | 30μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 30μA | 250V | 150A | 35 ns | 35 ns | Schottky | 250V | 40A | 1 | 500pF @ 5V 1MHz | 30μA @ 250V | 970mV @ 40A | -65°C~150°C | ||||||||||||||||||||||||||
| V10150S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-v10150se34w-datasheets-6897.pdf | TO-220-3 | 3 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 10A | 120A | 150μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 150V | 120A | TO-220AB | Schottky | 150V | 10A | 1 | 150μA @ 150V | 1.2V @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| IDH10SG60CXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-idh10sg60cxksa1-datasheets-6903.pdf | TO-220-2 | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 290pF @ 1V 1MHz | 600V | 90μA @ 600V | 2.1V @ 10A | 10A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR8045R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbr8045r-datasheets-9973.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 80A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 45V | Schottky, Reverse Polarity | 45V | 80A | 1 | 1mA @ 45V | 650mV @ 80A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8ETH03-1-M3 | Vishay Semiconductor Diodes Division | $1.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8eth03sm3-datasheets-6781.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14 Weeks | TO-262AA | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 300V | 20μA @ 300V | 1.25V @ 8A | 8A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRD330G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-mbrd340rlg-datasheets-3980.pdf | 30V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 8 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | No | Standard | Halogen Free | MBRD330 | Single | DPAK | 3A | 3A | 700mV | 75A | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 75A | 200μA | 30V | 75A | Schottky | 30V | 3A | 30V | 200μA @ 30V | 600mV @ 3A | 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SRAS2040 RNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sras2040rng-datasheets-6717.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 570mV @ 20A | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8ETU04-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8etu04m3-datasheets-6923.pdf | TO-220-2 | 14 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | Standard | 400V | 10μA @ 400V | 1.3V @ 8A | 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-10TQ045-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10tq045m3-datasheets-6868.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 900pF @ 5V 1MHz | 45V | 2mA @ 45V | 670mV @ 20A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VT2045BP-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vt2045bpm34w-datasheets-6927.pdf | TO-220-2 | 10.54mm | 15.32mm | 4.7mm | Lead Free | 2 | 10 Weeks | Unknown | 2 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 20A | 510mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 160A | 2mA | 45V | 160A | Schottky | 45V | 20A | 1 | 2mA @ 45V | 660mV @ 20A | 20A DC | 200°C Max | |||||||||||||||||||||||||||||||||||||||||
| MBR1060 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mbr1045-datasheets-6790.pdf | TO-220-2 | 2 | yes | LOW POWER LOSS | unknown | e0 | TIN LEAD | NO | SINGLE | 240 | 3 | 30 | 1 | COMMERCIAL | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | TO-220AC | Schottky | 150A | 1 | 10A | 400pF @ 5V 1MHz | 60V | 1mA @ 60V | 800mV @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR480ESG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | ROHS3 Compliant | 2008 | /files/onsemiconductor-mur480esg-datasheets-6815.pdf | 2.7mm | DO-201AA, DO-27, Axial | 5.2mm | 2 | 2 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 260 | MUR480 | 2 | Single | 40 | 1 | Rectifier Diodes | 4A | 1.85V | 70A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 70A | 25μA | 800V | 70A | 800V | 100 ns | 100 ns | Standard | 800V | 4A | 1 | 4A | 25μA @ 800V | 1.85V @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| 243NQ100-1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2015 | HALF-PAK | 16 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 5500pF @ 5V 1MHz | 100V | 6mA @ 100V | 860mV @ 240A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRF745-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 840mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 7.5A | 1 | 100μA @ 45V | 840mV @ 15A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| UG8DT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2004 | /files/vishaysemiconductordiodesdivision-ug8dte345-datasheets-6827.pdf | TO-220-2 | Lead Free | 2 | 20 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 30 | 1 | Rectifier Diodes | 8A | 1V | 150A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 10μA | 200V | 150A | 200V | 30 ns | 30 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-HFA04TB60-M3 | Vishay Semiconductor Diodes Division | $0.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa04tb60m3-datasheets-6832.pdf | TO-220-2 | 13 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | Standard | 600V | 3μA @ 600V | 2.2V @ 8A | 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NHPV08S600G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/onsemiconductor-nhpv08s600g-datasheets-6836.pdf | TO-220-2 | Lead Free | 2 | 23 Weeks | 1.799996g | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NO | 2 | Single | 1 | Rectifier Diodes | 8A | 3.2V | 80A | CATHODE | HIGH VOLTAGE ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 30μA | 600V | 80A | 50 ns | 30 ns | Standard | 600V | 8A | 1 | 8A | 600V | 30μA @ 600V | 3.2V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| GI1404-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gi1404e345-datasheets-6839.pdf | TO-220-2 | 2 | 20 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | TO-220AC | 35 ns | 35 ns | Standard | 200V | 8A | 1 | 8A | 5μA @ 200V | 975mV @ 8A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| SFF2005G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff2005gc0g-datasheets-6844.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 90pF @ 4V 1MHz | 300V | 10μA @ 300V | 1.3V @ 10A | 20A | -55°C~150°C |
