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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Turn-Off Delay Time | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Continuous Collector Current | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) |
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| APT20GN60BDQ1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt20gn60bdq1g-datasheets-2159.pdf | 600V | 40A | TO-247-3 | Lead Free | 3 | 25 Weeks | yes | No | e1 | TIN SILVER COPPER | 136W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 19 ns | 600V | 40A | 290 ns | 400V, 20A, 4.3 Ω, 15V | 30V | 6.5V | 1.9V @ 15V, 20A | Trench Field Stop | 120nC | 60A | 9ns/140ns | 230μJ (on), 580μJ (off) | |||||||||||||||||||||||||||||||||||
| STGWT30HP65FB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HB | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt30hp65fb-datasheets-2161.pdf | TO-3P-3, SC-65-3 | 32 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STGWT30 | NOT SPECIFIED | 260W | 140ns | 650V | 60A | 400V, 30A, 10 Ω, 15V | 2V @ 15V, 30A | Trench Field Stop | 149nC | 120A | -/146ns | 293μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJP6085DPN-00#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/renesaselectronicsamerica-rjp6085dpn00t2-datasheets-2162.pdf | TO-220-3 | Lead Free | 16 Weeks | 178.5W | NOT SPECIFIED | 4 | NOT SPECIFIED | 30 ns | 60 ns | 178.5W | 600V | 3.5V | 40A | 3.5V @ 15V, 40A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRGC4263B | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | Die | 15 Weeks | 60ns | 650V | 48A | Trench Field Stop | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA20N120B3-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | -55°C~150°C TJ | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 180W | 31ns | 1200V | 36A | 600V, 16A, 15 Ω, 15V | 3.1V @ 15V, 16A | PT | 51nC | 80A | 16ns/150ns | 920μJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXDP20N60BD1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixdp20n60bd1-datasheets-2119.pdf | TO-220-3 | Lead Free | 3 | 28 Weeks | 2.299997g | 3 | yes | HIGH SPEED | 140W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | TO-220AB | 40ns | 600V | 2.2V | 55 ns | 600V | 32A | 315 ns | 300V, 20A, 22 Ω, 15V | 2.8V @ 15V, 20A | NPT | 70nC | 40A | 900μJ (on), 400μJ (off) | |||||||||||||||||||||||||||||||||||
| IXGT6N170-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Standard | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 75W | 36ns | 1700V | 12A | 1360V, 6A, 33 Ω, 15V | 4V @ 15V, 6A | 20nC | 24A | 40ns/250ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK60B65M3 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 500W | TO-247 | 500W | 346 ns | 650V | 2.45V | 120A | 650V | 120A | 400V, 60A, 5Ohm, 15V | 2.45V @ 15V, 60A | 106nC | 180A | 44ns/166ns | 2.6mJ (on), 1.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGH30N60RUFDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-sgh30n60rufdtu-datasheets-2166.pdf | 600V | 30A | TO-3P-3, SC-65-3 | Lead Free | 3 | 8 Weeks | 6.401g | 3 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING | No | 8541.29.00.95 | e3 | Tin (Sn) | 235W | Single | 235W | 1 | SILICON | MOTOR CONTROL | N-CHANNEL | 95ns | 600V | 2.2V | 101 ns | 600V | 48A | 341 ns | 300V, 30A, 7 Ω, 15V | 2.8V @ 15V, 30A | 85nC | 90A | 30ns/54ns | 919μJ (on), 814μJ (off) | ||||||||||||||||||||||||||||||||||
| IXGP30N60C3D4 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/ixys-ixgp30n60c3d4-datasheets-2125.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | 2.299997g | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 220W | SINGLE | NOT SPECIFIED | IXG*30N60 | 3 | NOT SPECIFIED | 220W | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 60 ns | 600V | 2.6V | 45 ns | 3V | 60A | 160 ns | 300V, 20A, 5 Ω, 15V | 20V | 5.5V | 3V @ 15V, 20A | PT | 38nC | 150A | 16ns/42ns | 270μJ (on), 90μJ (off) | |||||||||||||||||||||||||||
| FGH40T100SMD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-fgh40t100smdf155-datasheets-2172.pdf | TO-247-3 | 9 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | EAR99 | 333W | NOT SPECIFIED | Single | NOT SPECIFIED | 333W | 78 ns | 1kV | 2.3V | 80A | 1000V | 600V, 40A, 10 Ω, 15V | 2.3V @ 15V, 40A | Trench Field Stop | 398nC | 120A | 29ns/285ns | 2.35mJ (on), 1.15mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| FGA5065ADF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga5065adf-datasheets-2126.pdf | TO-3P-3, SC-65-3 | 6 Weeks | 6.401g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 268W | NOT SPECIFIED | NOT SPECIFIED | 268W | 31.8 ns | 650V | 2.2V | 100A | 400V, 50A, 6 Ω, 15V | 2.2V @ 15V, 50A | Trench Field Stop | 72.2nC | 150A | 20.8ns/62.4ns | 1.35mJ (on), 309μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IKB30N65EH5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ 5 | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/infineontechnologies-ikb30n65eh5atma1-datasheets-2132.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 188W | 75ns | 650V | 55A | 400V, 30A, 22 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 70nC | 90A | 24ns/159ns | 870μJ (on), 300μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IKP20N60TAHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-ikp20n60tahksa1-datasheets-2074.pdf | TO-220-3 | 3 | 16 Weeks | yes | AEC-Q101 | 166W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 166W | TO-220AB | 41 ns | 600V | 35 ns | 2.05V | 40A | 287 ns | 400V, 20A, 12 Ω, 15V | 2.05V @ 15V, 20A | Trench Field Stop | 120nC | 60A | 18ns/199ns | 770μJ | |||||||||||||||||||||||||||||||||||||
| RJP60D0DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-rjp60d0dpk00t0-datasheets-2077.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | yes | 140W | NOT SPECIFIED | RJP60D | 4 | NOT SPECIFIED | 140W | 600V | 2.2V | 45A | 300V, 22A, 5 Ω, 15V | 2.2V @ 15V, 22A | 45nC | 35ns/90ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGC13T120T8LX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop™ | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/infineontechnologies-igc13t120t8lx1sa1-datasheets-2080.pdf | Die | Lead Free | 12 Weeks | EAR99 | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 1.2kV | 1.2kV | 1.2kV | 1200V | 2.07V @ 15V, 8A | Trench Field Stop | 30A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB30N65IHL2WG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/onsemiconductor-ngtb30n65ihl2wg-datasheets-2083.pdf | TO-247-3 | Lead Free | 12 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 300W | Single | 300W | 430 ns | 650V | 1.6V | 650V | 60A | 400V, 30A, 10 Ω, 15V | 2.2V @ 15V, 30A | Trench Field Stop | 135nC | 120A | -/145ns | 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| FGH40T65SPD-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fgh40t65spdf085-datasheets-2087.pdf | TO-247-3 | 5 Weeks | 6.39g | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | 267W | NOT SPECIFIED | NOT SPECIFIED | 267W | 650V | 2.4V | 80A | 400V, 40A, 6 Ω, 15V | 2.4V @ 15V, 40A | NPT | 36nC | 120A | 18ns/35ns | 1.16MJ (on), 270μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| SGW20N60FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-sgw20n60fksa1-datasheets-2094.pdf | TO-247-3 | 3 | 18 Weeks | yes | LOW CONDUCTION LOSS | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 179W | TO-247AC | 66 ns | 600V | 40A | 313 ns | 400V, 20A, 16 Ω, 15V | 2.4V @ 15V, 20A | NPT | 100nC | 80A | 36ns/225ns | 440μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||||||||||
| IXGA20N120A3-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | -55°C~150°C TJ | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 180W | 44ns | 1200V | 40A | 960V, 20A, 10 Ω, 15V | 2.5V @ 15V, 20A | PT | 50nC | 120A | 16ns/290ns | 2.85mJ (on), 6.47mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGW40N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/infineontechnologies-igw40n60h3fksa1-datasheets-2099.pdf | TO-247-3 | 3 | 16 Weeks | 6.500007g | No SVHC | 3 | yes | EAR99 | e3 | Tin (Sn) | Not Halogen Free | NO | 306W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | POWER CONTROL | N-CHANNEL | 306W | 600V | 1.95V | 48 ns | 600V | 80A | 249 ns | 400V, 40A, 7.9 Ω, 15V | 2.4V @ 15V, 40A | Trench Field Stop | 223nC | 160A | 19ns/197ns | 1.68mJ | |||||||||||||||||||||||||||||||||
| IXYA20N65C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Surface Mount | -55°C~175°C TJ | Standard | 2015 | /files/ixys-ixyp20n65c3d1-datasheets-1912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | compliant | 200W | 34ns | 650V | 50A | 400V, 20A, 20 Ω, 15V | 2.5V @ 15V, 20A | 30nC | 105A | 19ns/80ns | 430μJ (on), 650μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGW60H65DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgw60h65df-datasheets-2103.pdf | TO-247-3 | Lead Free | 3 | 32 Weeks | 6.500007g | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | 360W | STGW60 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | 67 ns | 165 ns | SILICON | POWER CONTROL | N-CHANNEL | 360W | 62 ns | 650V | 2.1V | 113 ns | 350V | 120A | 247 ns | 400V, 60A, 10 Ω, 15V | 20V | 1.9V @ 15V, 60A | Trench Field Stop | 206nC | 240A | 67ns/165ns | 1.5mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||||
| IXGH85N30C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/ixys-ixgh85n30c3-datasheets-2059.pdf | TO-247-3 | 3 | 24 Weeks | 6.500007g | 3 | yes | EAR99 | 333W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 333W | TO-247AD | 300V | 55 ns | 1.9V | 75A | 221 ns | 200V, 42.5A, 3.3 Ω, 15V | 1.9V @ 15V, 85A | PT | 136nC | 420A | 25ns/100ns | 200μJ (on), 390μJ (off) | ||||||||||||||||||||||||||||||||||||
| RGTH60TS65DGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rgth60ts65dgc11-datasheets-2107.pdf | TO-247-3 | 3 | 17 Weeks | Unknown | 3 | yes | EAR99 | 194W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | SILICON | POWER CONTROL | N-CHANNEL | 30A | 194W | 58 ns | 650V | 1.6V | 67 ns | 650V | 58A | 179 ns | 400V, 30A, 10 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 58nC | 120A | 27ns/105ns | |||||||||||||||||||||||||||||||||||||||
| IRG7CH37K10EF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-irg7ch37k10ef-datasheets-2060.pdf | Die | 16 Weeks | EAR99 | Insulated Gate BIP Transistors | N-CHANNEL | 1200V | 15A | 600V, 15A, 10 Ω, 15V | 30V | 7.5V | 2.3V @ 15V, 15A | 80nC | 28ns/122ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGTD65T40S1PT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | TO-247-3 | 20 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 341W | 145ns | 650V | 80A | 400V, 40A, 7.9 Ω, 15V | 2.4V @ 15V, 40A | Field Stop | 219nC | 160A | 58ns/245ns | 1.15mJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AIGB40N65F5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Standard | /files/infineontechnologies-tle9012aquxuma1-datasheets-7439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 39 Weeks | 650V | 40A | NPT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA28N60A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Surface Mount | -55°C~150°C TJ | Standard | 2016 | /files/ixys-ixga28n60a3-datasheets-2062.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | compliant | 190W | 26ns | 600V | 75A | 480V, 24A, 10 Ω, 15V | 1.4V @ 15V, 24A | PT | 66nC | 170A | 18ns/300ns | 700μJ (on), 2.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP12N100A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixga12n100-datasheets-5418.pdf | TO-220-3 | 3 | yes | HIGH SPEED | 100W | SINGLE | NOT SPECIFIED | IXG*12N100 | 3 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-220AB | 1kV | 100 ns | 4V | 24A | 1000V | 900 ns | 800V, 12A, 120 Ω, 15V | 20V | 5V | 4V @ 15V, 12A | 65nC | 48A | 100ns/850ns | 2.5mJ (off) | 700ns |
