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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EGP50DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 150A | 200V | 50 ns | 50 ns | Standard | 200V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 5A | -65°C~150°C | |||||||||||||||
| BY127MGP-E3/73 | Vishay Semiconductor Diodes Division | $6.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by127mgphe354-datasheets-2928.pdf | DO-204AC, DO-15, Axial | 2 | EAR99 | FREEWHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | BY127 | 1 | O-PALF-W2 | 50A | SINGLE | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.25kV | 2 μs | 2 μs | Standard | 1.25kV | 1.75A | 1 | 1250V | 5μA @ 1250V | 1.5V @ 5A | -65°C~175°C | |||||||||||||||||||||||
| GI858-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi858e373-datasheets-4925.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 100A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 100A | 800V | 200 ns | 200 ns | Standard | 800V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 10μA @ 800V | 1.25V @ 3A | -50°C~150°C | |||||||||||||||||||
| BYD13JGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd13jgphe354-datasheets-0967.pdf | DO-204AL, DO-41, Axial | No | BYD13J | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 600V | 30A | 600V | 3 μs | 3 μs | Standard | 600V | 1A | 8pF @ 4V 1MHz | 600V | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| GP02-35HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp0240e354-datasheets-3946.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | GP02-35 | 2 | Single | 1 | Rectifier Diodes | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 3.5kV | 15A | 3.5kV | 2 μs | 2 μs | Standard | 3.5kV | 250mA | 3500V | 5μA @ 3500V | 3V @ 1A | -65°C~175°C | ||||||||||||||||||||
| GP08DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp08ge354-datasheets-4610.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP08D | 2 | Single | 1 | Rectifier Diodes | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 25A | 200V | 2 μs | 2 μs | Standard | 200V | 800mA | 0.8A | 5μA @ 200V | 1.3V @ 800mA | -65°C~175°C | ||||||||||||||||||||
| FGP30B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp30bhe373-datasheets-4899.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP30B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 3A | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 100V | 35 ns | 35 ns | Standard | 100V | 3A | 1 | 3A | 70pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 3A | -65°C~175°C | ||||||||||||||||
| FGP30DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp30bhe373-datasheets-4899.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP30D | 2 | Single | 1 | Rectifier Diodes | 3A | 950mV | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 35 ns | Standard | 200V | 3A | 1 | 3A | 70pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 3A | -65°C~175°C | ||||||||||||||||||
| EGP50C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 950mV | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 150A | 150V | 50 ns | 50 ns | Standard | 150V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 5A | -65°C~150°C | ||||||||||||||
| EGP50B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 12 Weeks | 20 | yes | EAR99 | No | 8541.10.00.80 | EGP50B | 2 | Single | 5A | 950mV | 150A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 150A | 100V | 50 ns | 50 ns | Standard | 100V | 5A | 95pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 5A | -65°C~150°C | ||||||||||||||||||||||||||
| FGP30D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp30bhe373-datasheets-4899.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP30D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 3A | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | 35 ns | 35 ns | Standard | 200V | 3A | 1 | 3A | 70pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 3A | -65°C~175°C | ||||||||||||||||
| EGP10GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10G | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 50 ns | 50 ns | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.25V @ 1A | -65°C~150°C | |||||||||||||||||||
| FGP50B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 20 | No | FGP50B | Single | GP20 | 5A | 135A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 135A | 100V | 35 ns | 35 ns | Standard | 100V | 5A | 100pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 5A | 5A | -65°C~175°C | |||||||||||||||||||||||||||||
| FGP50CHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 135A | 150V | 35 ns | 35 ns | Standard | 150V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 5A | -65°C~175°C | |||||||||||||||
| EGP50A-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 150A | 50V | 50 ns | 50 ns | Standard | 50V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 50V | 950mV @ 5A | -65°C~150°C | |||||||||||||||
| EGP30BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 100V | 50 ns | 50 ns | Standard | 100V | 3A | 1 | 3A | 5μA @ 100V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||
| FGP10DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 30A | 200V | 35 ns | 35 ns | Standard | 200V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 200V | 950mV @ 1A | -65°C~175°C | |||||||||||||||||||
| BYD13GGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd13jgphe354-datasheets-0967.pdf | DO-204AL, DO-41, Axial | No | BYD13G | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 3 μs | 3 μs | Standard | 400V | 1A | 400V | 5μA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| 1N5062GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5059gpe354-datasheets-1939.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N5062 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 800V | 50A | 800V | 2 μs | 2 μs | Standard | 800V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 800V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||
| FGP30BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp30bhe373-datasheets-4899.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP30B | 2 | Single | 1 | Rectifier Diodes | 3A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 35 ns | Standard | 100V | 3A | 1 | 3A | 70pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 3A | -65°C~175°C | |||||||||||||||||||
| EGP30B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 12 Weeks | 20 | yes | EAR99 | No | 8541.10.00.80 | EGP30B | 2 | Single | 125A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 125A | 100V | 50 ns | 50 ns | Standard | 100V | 3A | 5μA @ 100V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||||||||||||||
| EGP50AHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 150A | 50V | 50 ns | 50 ns | Standard | 50V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 50V | 950mV @ 5A | -65°C~150°C | |||||||||||||||
| EGP50F-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 20 | No | EGP50F | Single | GP20 | 5A | 1.25V | 150A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 300V | 150A | 300V | 50 ns | 50 ns | Standard | 300V | 5A | 75pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.25V @ 5A | 5A | -65°C~150°C | ||||||||||||||||||||||||||||
| FGP50DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 135A | 200V | 35 ns | 35 ns | Standard | 200V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 5A | -65°C~175°C | |||||||||||||||
| FGP50BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 135A | 100V | 35 ns | 35 ns | Standard | 100V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 5A | -65°C~175°C | |||||||||||||||
| GHR16-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ghr16e373-datasheets-4879.pdf | R-1, Axial | 2 | 1 | yes | EAR99 | LOW LEAKAGE CURRENT | No | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.6kV | 20A | 1.6kV | 300 ns | 300 ns | Standard | 1.6kV | 500mA | 0.5A | 1600V | 5μA @ 1600V | 1.5V @ 500mA | -65°C~175°C | |||||||||||||||||||||
| EGP20GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 75A | 400V | 50 ns | 50 ns | Standard | 400V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 5μA @ 400V | 1.25V @ 2A | -65°C~150°C | |||||||||||||||||
| BY500-600-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by500100e373-datasheets-4810.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | BY500-600 | 2 | Single | 1 | Rectifier Diodes | 5A | 1.35V | 200A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 200A | 600V | 200 ns | 200 ns | Standard | 600V | 5A | 1 | 5A | 28pF @ 4V 1MHz | 10μA @ 600V | 1.35V @ 5A | 125°C Max | ||||||||||||||||
| MBRF7H50HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 7.5A | 150A | 50μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 50V | 150A | Schottky | 50V | 7.5A | 1 | 50μA @ 50V | 730mV @ 7.5A | -65°C~150°C | ||||||||||||||||||||||||
| EGP10AHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10A | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 50 ns | 50 ns | Standard | 50V | 1A | 1A | 22pF @ 4V 1MHz | 5μA @ 50V | 950mV @ 1A | -65°C~150°C |
