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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDS8874 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds8874-datasheets-2250.pdf | 30V | 16A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2.5W | 1 | 45ns | 50 ns | 54 ns | 16A | 20V | 2.5W Ta | 30V | N-Channel | 3990pF @ 15V | 5.5m Ω @ 16A, 10V | 2.5V @ 250μA | 16A Ta | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50UM25SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50um25sg-datasheets-2264.pdf | J3 Module | 4 | yes | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 149A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ISOLATED | SWITCHING | 500V | 500V | 1250W Tc | 550A | 0.025Ohm | 1600 mJ | N-Channel | 17500pF @ 25V | 25m Ω @ 74.5A, 10V | 5V @ 10mA | 149A Tc | 364nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| 64-2096PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2907zs7ppbf-datasheets-9830.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 75V | 300W Tc | N-Channel | 7580pF @ 25V | 3.8m Ω @ 110A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4310ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfs4310ztrlpbf-datasheets-2802.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | 3 | 15 Weeks | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 40 | 250W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 60ns | 57 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 560A | 0.006Ohm | 100V | N-Channel | 6860pF @ 50V | 4 V | 6m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6714MTR1PBF | Infineon Technologies | $2.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6714mtrpbf-datasheets-0724.pdf | DirectFET™ Isometric MX | 5.45mm | 508μm | 5.05mm | Lead Free | No SVHC | 2.1Ohm | 7 | No | 2.8W | 1 | DIRECTFET™ MX | 3.89nF | 18 ns | 26ns | 9.6 ns | 13 ns | 29A | 20V | 25V | 25V | 1.9V | 2.8W Ta 89W Tc | 39 ns | 3.4mOhm | 25V | N-Channel | 3890pF @ 13V | 1.9 V | 2.1mOhm @ 29A, 10V | 2.4V @ 100μA | 29A Ta 166A Tc | 44nC @ 4.5V | 2.1 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| APTM50DAM38TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50dam38tg-datasheets-2306.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 1 | FET General Purpose Power | Not Qualified | 90A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | 694W Tc | 360A | 2500 mJ | N-Channel | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 90A Tc | 246nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APTM50SKM38TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50skm38tg-datasheets-2198.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 1 | FET General Purpose Power | Not Qualified | 90A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | 694W Tc | 360A | 2500 mJ | N-Channel | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 90A Tc | 246nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APTM50DAM35TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50dam35tg-datasheets-2209.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 781W | 1 | FET General Purpose Power | Not Qualified | 99A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | 781W Tc | 396A | 0.039Ohm | 3000 mJ | N-Channel | 14000pF @ 25V | 39m Ω @ 49.5A, 10V | 5V @ 5mA | 99A Tc | 280nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FDD8444-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdd8444f085-datasheets-2200.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 260.37mg | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 153W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 78ns | 15 ns | 48 ns | 145A | 20V | SILICON | DRAIN | SWITCHING | 153W Tc | TO-252AA | 20A | 0.0052Ohm | 535 mJ | 40V | N-Channel | 6195pF @ 25V | 5.2m Ω @ 50A, 10V | 4V @ 250μA | 145A Tc | 116nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDS5682 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds5682-datasheets-2192.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 60V | 2.5W Ta | N-Channel | 1650pF @ 25V | 21mOhm @ 7.5A, 10V | 2V @ 250μA | 7.5A Ta | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1324STRL-7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1324strl7pp-datasheets-2221.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | No SVHC | 7 | EAR99 | Tin | e3 | SINGLE | GULL WING | 260 | 30 | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 19 ns | 240ns | 93 ns | 86 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 230 mJ | 24V | N-Channel | 7700pF @ 19V | 4 V | 1m Ω @ 160A, 10V | 4V @ 250μA | 240A Tc | 252nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDP8878 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp8878-datasheets-2229.pdf | TO-220-3 | Lead Free | 1.8g | NOT SPECIFIED | Single | NOT SPECIFIED | 40.5W | 1 | 244ns | 35.3 ns | 14.8 ns | 40A | 20V | 40.5W Tc | 30V | N-Channel | 1235pF @ 15V | 15m Ω @ 40A, 10V | 2.5V @ 250μA | 40A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB9N50CFTM_WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb9n50cftmws-datasheets-2239.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 500V | 173W Tc | N-Channel | 1030pF @ 25V | 850mOhm @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50UM19SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50um19sg-datasheets-2251.pdf | J3 Module | 4 | yes | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 163A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ISOLATED | SWITCHING | 500V | 500V | 1136W Tc | 652A | 0.019Ohm | 2500 mJ | N-Channel | 22400pF @ 25V | 19m Ω @ 81.5A, 10V | 5V @ 10mA | 163A Tc | 492nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| AO4714 | Alpha & Omega Semiconductor Inc. | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | unknown | 20A | 30V | 3W Ta | N-Channel | 4512pF @ 15V | 4.7m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta | 74nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120SK15G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120sk15g-datasheets-2256.pdf | SP6 | 5 | 6 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 5 | NOT SPECIFIED | 1.25kW | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X5 | 60A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 1250W Tc | 240A | 3000 mJ | N-Channel | 20600pF @ 25V | 175m Ω @ 30A, 10V | 5V @ 10mA | 60A Tc | 748nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRF6633ATR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6633atr1pbf-datasheets-0806.pdf | DirectFET™ Isometric MU | 700μm | 5.05mm | 3 | No | 42W | DIRECTFET™ MU | 1.41nF | 6.9 ns | 13ns | 7.7 ns | 8.4 ns | 16A | 20V | 20V | 2.3W Ta 42W Tc | 9.4mOhm | 20V | N-Channel | 1410pF @ 10V | 5.6mOhm @ 16A, 10V | 2.2V @ 250μA | 16A Ta 69A Tc | 17nC @ 4.5V | 5.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SK0664G0L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk066400l-datasheets-8025.pdf | SC-85 | 85 | SMini3-F2 | 15pF | 100mA | 50V | 150mW Ta | N-Channel | 15pF @ 5V | 50Ohm @ 20mA, 5V | 3.5V @ 100μA | 100mA Ta | 50 Ω | 5V | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20SKM05G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP6 | 5 | 22 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1 | R-XUFM-X5 | 28 ns | 56ns | 99 ns | 81 ns | 317A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 1136W Tc | 2500 mJ | N-Channel | 27400pF @ 25V | 6m Ω @ 158.5A, 10V | 5V @ 10mA | 317A Tc | 448nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APTM50SKM35TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50skm35tg-datasheets-2193.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 781W | 1 | FET General Purpose Power | Not Qualified | 99A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | 781W Tc | 396A | 0.039Ohm | 3000 mJ | N-Channel | 14000pF @ 25V | 39m Ω @ 49.5A, 10V | 5V @ 5mA | 99A Tc | 280nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APTM20UM05SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20um05sg-datasheets-2195.pdf | J3 Module | 4 | yes | EAR99 | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-XUFM-X4 | 317A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ISOLATED | SWITCHING | 200V | 200V | 1136W Tc | 1268A | 0.005Ohm | 2500 mJ | N-Channel | 27400pF @ 25V | 5m Ω @ 158.5A, 10V | 5V @ 10mA | 317A Tc | 448nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APTM50DAM38CTG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50dam38ctg-datasheets-2196.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 1 | FET General Purpose Power | Not Qualified | 90A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | 694W Tc | 360A | 2500 mJ | N-Channel | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 90A Tc | 246nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APTM100SKM90G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP6 | 5 | 22 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.25kW | 1 | R-XUFM-X5 | 18 ns | 12ns | 40 ns | 155 ns | 78A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1250W Tc | 3000 mJ | N-Channel | 20700pF @ 25V | 105m Ω @ 39A, 10V | 5V @ 10mA | 78A Tc | 744nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APTM120DA56T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP1 | 12 | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | 390W | 1 | FET General Purpose Power | 50 ns | 31ns | 48 ns | 170 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 390W Tc | 0.672Ohm | N-Channel | 7736pF @ 25V | 672m Ω @ 14A, 10V | 5V @ 2.5mA | 18A Tc | 300nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APTM120DA68T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120da68t1g-datasheets-2164.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 15A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 357W Tc | 90A | N-Channel | 6696pF @ 25V | 816m Ω @ 12A, 10V | 5V @ 2.5mA | 15A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| APTM20SKM10TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20skm10tg-datasheets-2166.pdf | SP4 | 12 | 4 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 1 | FET General Purpose Power | Not Qualified | 175A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | 694W Tc | 700A | 2500 mJ | N-Channel | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 175A Tc | 224nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APTM100DA40T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100da40t1g-datasheets-2168.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1000V | 357W Tc | 0.48Ohm | N-Channel | 6800pF @ 25V | 480m Ω @ 16A, 10V | 5V @ 2.5mA | 20A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| APTM20DAM10TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20dam10tg-datasheets-2169.pdf | SP4 | 12 | 4 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 1 | Not Qualified | 175A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | 694W Tc | 700A | 2500 mJ | N-Channel | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 175A Tc | 224nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APTM120DA29TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120da29tg-datasheets-2171.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | 34A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 780W Tc | 3000 mJ | N-Channel | 10300pF @ 25V | 348m Ω @ 17A, 10V | 5V @ 5mA | 34A Tc | 374nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| APTM120SK29TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120sk29tg-datasheets-2173.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | 34A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 780W Tc | 3000 mJ | N-Channel | 10300pF @ 25V | 348m Ω @ 17A, 10V | 5V @ 5mA | 34A Tc | 374nC @ 10V | 10V | ±30V |
