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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NP55N03SUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np55n03suge1ay-datasheets-4463.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | No | SINGLE | GULL WING | 3 | 1.2W | 1 | FET General Purpose Power | R-PSSO-G2 | 32 ns | 52ns | 12 ns | 73 ns | 55A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.2W Ta 77W Tc | TO-252AA | 220A | 0.005Ohm | N-Channel | 5300pF @ 25V | 5m Ω @ 28A, 10V | 4V @ 250μA | 55A Tc | 93nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| NP88N075KUE-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np88n075kuee1ay-datasheets-4467.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1.8W Ta 288W Tc | 88A | 352A | 0.0085Ohm | 450 mJ | N-Channel | 12300pF @ 25V | 8.5m Ω @ 44A, 10V | 4V @ 250μA | 88A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| TK40P03M1(T6RDS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 33W | DPAK | 1.15nF | 15ns | 14 ns | 40A | 20V | 30V | N-Channel | 1150pF @ 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100μA | 40A Ta | 17.5nC @ 10V | 10.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK4A60DB(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 18ns | 8 ns | 3.7A | 30V | 600V | 35W Tc | N-Channel | 540pF @ 25V | 2 Ω @ 1.9A, 10V | 4.4V @ 1mA | 3.7A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| NP80N04KHE-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np80n04khee1ay-datasheets-4418.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 14ns | 15 ns | 44 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 120W Tc | 0.008Ohm | N-Channel | 3300pF @ 25V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| NP70N10KUF-E1-AY | Renesas Electronics America | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np70n10kufe1ay-datasheets-4480.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | EAR99 | No | 3 | 1.8W | 1 | FET General Purpose Power | 25 ns | 9ns | 7 ns | 48 ns | 70A | 20V | Single | 100V | 1.8W Ta 120W Tc | N-Channel | 3750pF @ 25V | 20m Ω @ 35A, 10V | 3.3V @ 250μA | 70A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2SK3793-AZ | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/renesaselectronicsamerica-2sk3793az-datasheets-4360.pdf | TO-220-3 Isolated Tab | Lead Free | EAR99 | No | 3 | 2W | 1 | FET General Purpose Power | 9 ns | 5ns | 4 ns | 30 ns | 12A | 20V | Single | 100V | 2W Ta 20W Tc | N-Channel | 900pF @ 10V | 125m Ω @ 6A, 10V | 12A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NP109N055PUJ-E1B-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np109n055puje1bay-datasheets-4364.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | No | SINGLE | GULL WING | 3 | 1.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 40 ns | 20ns | 10 ns | 90 ns | 110A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 40V | 1.8W Ta 220W Tc | 440A | 0.0032Ohm | N-Channel | 10350pF @ 25V | 3.2m Ω @ 55A, 10V | 4V @ 250μA | 110A Ta | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| NP110N04PUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np110n04puge1ay-datasheets-4369.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 3 | EAR99 | No | 3 | FET General Purpose Power | 54 ns | 140ns | 21 ns | 130 ns | 110A | 20V | Single | 40V | 1.8W Ta 288W Tc | N-Channel | 25700pF @ 25V | 1.8m Ω @ 55A, 10V | 4V @ 250μA | 110A Tc | 390nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NP48N055KLE-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/renesaselectronicsamerica-np48n055klee1ay-datasheets-4376.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | No | 8541.29.00.95 | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 11ns | 9.3 ns | 54 ns | 48A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 85W Tc | 140A | 0.024Ohm | 100 mJ | N-Channel | 3000pF @ 25V | 17m Ω @ 24A, 10V | 2.5V @ 250μA | 48A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| NP55N055SDG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np55n055sdge1ay-datasheets-4379.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | EAR99 | No | 3 | 1.2W | 1 | FET General Purpose Power | 17 ns | 16ns | 6 ns | 71 ns | 55A | 20V | Single | 55V | 1.2W Ta 77W Tc | N-Channel | 4800pF @ 25V | 9.5m Ω @ 28A, 10V | 2.5V @ 250μA | 55A Tc | 96nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NP60N04MUG-S18-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np60n04mugs18ay-datasheets-4387.pdf | TO-220-3 | 3 | EAR99 | No | 8541.29.00.95 | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 21 ns | 10ns | 10 ns | 48 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 88W Tc | TO-220AB | 240A | 0.0063Ohm | N-Channel | 3200pF @ 25V | 6.3m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| 2SK3483-AZ | Renesas Electronics America | $1.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/renesaselectronicsamerica-2sk3483az-datasheets-4391.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 16 Weeks | EAR99 | Tin | 8541.29.00.95 | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 12 ns | 9ns | 5 ns | 53 ns | 28A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1W Ta 40W Tc | 0.059Ohm | N-Channel | 2300pF @ 10V | 52m Ω @ 14A, 10V | 28A Ta | 49nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| NP52N055SUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np52n055suge1ay-datasheets-4395.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | EAR99 | No | 3 | FET General Purpose Power | 17 ns | 14ns | 7 ns | 47 ns | 52A | 20V | Single | 55V | 1.2W Ta 56W Tc | N-Channel | 3200pF @ 25V | 14m Ω @ 26A, 10V | 4V @ 250μA | 52A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NP60N04KUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np60n04kuge1ay-datasheets-4397.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 26 Weeks | EAR99 | No | 3 | 1.8W | 1 | FET General Purpose Power | 30 ns | 52ns | 12 ns | 78 ns | 60A | 20V | Single | 40V | 1.8W Ta 88W Tc | N-Channel | 5100pF @ 25V | 6.1m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NP50P04KDG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np50p04kdge1ay-datasheets-4400.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | No | SINGLE | GULL WING | 3 | 1.8W | 1 | Other Transistors | R-PSSO-G2 | 20 ns | 45ns | 230 ns | 405 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 90W Tc | P-Channel | 5100pF @ 10V | 10m Ω @ 25A, 10V | 2.5V @ 1mA | 50A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| NP50P06KDG-E1-AY | Renesas Electronics America | $1.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np50p06kdge1ay-datasheets-4404.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | EAR99 | No | SINGLE | GULL WING | 3 | 1.8W | 1 | Other Transistors | R-PSSO-G2 | 20 ns | 45ns | 270 ns | 405 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.8W Ta 90W Tc | 0.023Ohm | P-Channel | 5000pF @ 10V | 17m Ω @ 25A, 10V | 2.5V @ 1mA | 50A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| NP60N03KUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np60n03kuge1ay-datasheets-4406.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | EAR99 | No | 3 | 1.8W | 1 | FET General Purpose Power | 32 ns | 52ns | 12 ns | 73 ns | 60A | 20V | Single | 30V | 1.8W Ta 88W Tc | N-Channel | 5300pF @ 25V | 4.8m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NP32N055SLE-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np32n055slee1ay-datasheets-4410.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | No | 1.2W | 1 | FET General Purpose Power | 14 ns | 8ns | 7.4 ns | 40 ns | 32A | 20V | Single | 55V | 1.2W Ta 66W Tc | N-Channel | 2000pF @ 25V | 24m Ω @ 16A, 10V | 2.5V @ 250μA | 32A Tc | 41nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NP60N055KUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np60n055kuge1ay-datasheets-4412.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | EAR99 | No | 8541.29.00.95 | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 44ns | 8 ns | 79 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 88W Tc | 240A | 0.0094Ohm | N-Channel | 5600pF @ 25V | 9.4m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 92nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| NP82N04NUG-S18-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np82n04nugs18ay-datasheets-4414.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | No | 8541.29.00.95 | SINGLE | 3 | 1 | FET General Purpose Power | 39 ns | 102ns | 13 ns | 67 ns | 82A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 143W Tc | 0.0042Ohm | N-Channel | 9750pF @ 25V | 4.2m Ω @ 41A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| 2SK3481-AZ | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/renesaselectronicsamerica-2sk3481az-datasheets-4302.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | SINGLE | 260 | 3 | 1.5W | 1 | FET General Purpose Power | 13 ns | 10ns | 5 ns | 53 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1.5W Ta 56W Tc | TO-220AB | 60A | 0.058Ohm | 68 mJ | N-Channel | 2300pF @ 10V | 50m Ω @ 15A, 10V | 30A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| 2SK4087LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk4087ls-datasheets-4307.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | HIGH RELIABILITY | No | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 3 | Single | 2W | 1 | 27 ns | 72ns | 48 ns | 144 ns | 14A | 30V | SILICON | SWITCHING | 2W Ta 40W Tc | TO-220AB | 52A | 0.61Ohm | 117 mJ | 600V | N-Channel | 1200pF @ 30V | 610m Ω @ 7A, 10V | 9.2A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| 2SJ673-AZ | Renesas Electronics America | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sj673az-datasheets-4308.pdf | TO-220-3 Isolated Tab | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | Other Transistors | 36A | Single | 60V | 2W Ta 32W Tc | P-Channel | 4600pF @ 10V | 20m Ω @ 18A, 10V | 36A Tc | 87nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK9875-100A,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk9875100acux-datasheets-8680.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 8W Tc | 7A | 28A | 0.084Ohm | 49 mJ | N-Channel | 1690pF @ 25V | 72m Ω @ 8A, 10V | 2V @ 1mA | 7A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||
| 2SK4088LS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk4088ls-datasheets-4318.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | HIGH RELIABILITY | No | 8541.29.00.95 | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 3 | Single | 2W | 1 | 24 ns | 58ns | 40 ns | 117 ns | 11A | 30V | SILICON | SWITCHING | 2W Ta 37W Tc | TO-220AB | 40A | 0.85Ohm | 71 mJ | 650V | N-Channel | 1000pF @ 30V | 850m Ω @ 5.5A, 10V | 7.5A Tc | 37.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| NP15P06SLG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np15p06slge1ay-datasheets-4319.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1.2W | 1 | Other Transistors | R-PSSO-G2 | 7 ns | 5ns | 65 ns | 100 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.2W Ta 30W Tc | TO-252AA | 45A | 0.095Ohm | P-Channel | 1100pF @ 10V | 70m Ω @ 7.5A, 10V | 2.5V @ 250μA | 15A Ta | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| 2SK4065-DL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 6mOhm | 3 | No | Single | 90W | 80 ns | 460ns | 640 ns | 930 ns | 100A | 20V | 1.65W Ta 90W Tc | 75V | N-Channel | 12200pF @ 20V | 6m Ω @ 50A, 10V | 100A Ta | 220nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NP110N03PUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np110n03puge1ay-datasheets-4322.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | EAR99 | No | 3 | 1.8W | 1 | FET General Purpose Power | 60 ns | 150ns | 32 ns | 125 ns | 110A | 20V | Single | 30V | 1.8W Ta 288W Tc | N-Channel | 24600pF @ 25V | 1.5m Ω @ 55A, 10V | 4V @ 250μA | 110A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NP15P04SLG-E1-AY | Renesas Electronics America | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np15p04slge1ay-datasheets-4325.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | No | SINGLE | GULL WING | 3 | 1.2W | 1 | Other Transistors | R-PSSO-G2 | 7 ns | 5ns | 65 ns | 100 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.2W Ta 30W Tc | TO-252AA | 45A | 0.06Ohm | 25 mJ | P-Channel | 1100pF @ 10V | 40m Ω @ 7.5A, 10V | 2.5V @ 250μA | 15A Ta | 23nC @ 10V | 4.5V 10V | ±20V |
