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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK4P60DA(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | 3 | No | 80W | 1 | 18ns | 8 ns | 3.5A | 30V | 600V | 80W Tc | N-Channel | 490pF @ 25V | 2.2 Ω @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4P60DB(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | No | 80W | 1 | 18ns | 8 ns | 3.7A | 30V | 600V | 80W Tc | N-Channel | 540pF @ 25V | 2 Ω @ 1.9A, 10V | 4.4V @ 1mA | 3.7A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC6010-H(TE85L,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | 2.4ns | 3.2 ns | 6.1A | 20V | 60V | 700mW Ta | N-Channel | 830pF @ 10V | 59m Ω @ 3.1A, 10V | 2.3V @ 100μA | 6.1A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4A55D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 24 Weeks | No | TO-220SIS | 490pF | 18ns | 8 ns | 4A | 30V | 550V | 35W Tc | N-Channel | 490pF @ 25V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 11nC @ 10V | 1.88 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP36P04KDG-E1-AY | Renesas Electronics America | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np36p04kdge1ay-datasheets-4510.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 26 Weeks | EAR99 | No | SINGLE | GULL WING | 3 | 1.8W | 1 | Other Transistors | R-PSSO-G2 | 8 ns | 10ns | 140 ns | 250 ns | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 56W Tc | 0.0235Ohm | 72 mJ | P-Channel | 2800pF @ 10V | 17m Ω @ 18A, 10V | 2.5V @ 1mA | 36A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| ATP107-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-atp107tlh-datasheets-4514.pdf | ATPAK (2 leads+tab) | Lead Free | 3.949996g | 3 | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 3 | 1 | Single | Other Transistors | 17 ns | 260ns | 160 ns | 190 ns | 50A | 20V | 40V | 50W Tc | P-Channel | 2400pF @ 20V | 17m Ω @ 25A, 10V | 50A Ta | 47nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NP36P06SLG-E1-AY | Renesas Electronics America | $1.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np36p06slge1ay-datasheets-4518.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1.2W | 1 | Other Transistors | R-PSSO-G2 | 7 ns | 12ns | 110 ns | 190 ns | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.2W Ta 56W Tc | TO-252AA | 0.04Ohm | P-Channel | 3200pF @ 10V | 30m Ω @ 18A, 10V | 36A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| DMP58D0LFB-7B | Diodes Incorporated | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmp58d0lfb7-datasheets-9204.pdf | 3-UFDFN | 3 | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 470mW | BOTTOM | NO LEAD | 260 | 3 | 40 | 1 | Other Transistors | 180mA | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 0.18A | 8Ohm | P-Channel | 27pF @ 25V | 8 Ω @ 100mA, 5V | 2.1V @ 250μA | 180mA Ta | ||||||||||||||||||||||||||||||||||||||||||
| DMN62D0LFB-7B | Diodes Incorporated | $0.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn62d0lfb7b-datasheets-4483.pdf | 3-UFDFN | 3 | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | 470mW | BOTTOM | NO LEAD | 3 | 1 | 100mA | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2Ohm | 6 pF | N-Channel | 32pF @ 25V | 2 Ω @ 100mA, 4V | 1V @ 250μA | 100mA Ta | 0.45nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||
| TK4A53D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 24 Weeks | 3 | No | TO-220SIS | 490pF | 18ns | 8 ns | 4A | 30V | 525V | 35W Tc | N-Channel | 490pF @ 25V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 11nC @ 10V | 1.7 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20A25D,S5Q(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | TO-220SIS | 250V | 45W Tc | N-Channel | 2550pF @ 100V | 100mOhm @ 10A, 10V | 3.5V @ 1mA | 20A Ta | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP88N075MUE-S18-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np88n075kuee1ay-datasheets-4467.pdf | TO-220-3 | 3 | No | TO-220-3 | 12.3nF | 35 ns | 28ns | 16 ns | 105 ns | 88A | 20V | 75V | 1.8W Ta 288W Tc | N-Channel | 12300pF @ 25V | 8.5mOhm @ 44A, 10V | 4V @ 250μA | 88A Tc | 230nC @ 10V | 8.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4P50D(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | No | 80W | 1 | 15ns | 7 ns | 4A | 30V | 500V | 80W Tc | N-Channel | 380pF @ 25V | 2 Ω @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG30N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg30n60ege3-datasheets-4581.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 17 Weeks | 38.000013g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK4P55D(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | D-Pak | 490pF | 18ns | 8 ns | 4A | 30V | 550V | 80W Tc | N-Channel | 490pF @ 25V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 11nC @ 10V | 1.88 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4A55DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $2.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 380pF | 15ns | 7 ns | 3.5A | 30V | 550V | 30W Tc | N-Channel | 380pF @ 25V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 9nC @ 10V | 2.45 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK45P03M1,RQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 39W | DPAK | 1.5nF | 4.2ns | 9.4 ns | 45A | 20V | 30V | N-Channel | 1500pF @ 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200μA | 45A Ta | 25nC @ 10V | 9.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP90N04MUG-S18-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np90n04mugs18ay-datasheets-4496.pdf | TO-220-3 | 3 | EAR99 | No | 8541.29.00.95 | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 42 ns | 12ns | 17 ns | 92 ns | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 217W Tc | TO-220AB | 360A | 0.003Ohm | N-Channel | 11200pF @ 25V | 3m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 182nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMN3029LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn3029lfg7-datasheets-4501.pdf | 8-PowerVDFN | 5 | 15 Weeks | No SVHC | 8 | no | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 8 | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 5.3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1W Ta | 8A | N-Channel | 580pF @ 15V | 18.6m Ω @ 10A, 10V | 1.8V @ 250μA | 5.3A Ta | 11.3nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| NP22N055SHE-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np22n055shee1ay-datasheets-4433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | No | 1.2W | 1 | FET General Purpose Power | 11 ns | 6ns | 6.6 ns | 25 ns | 22A | 20V | Single | 55V | 1.2W Ta 45W Tc | N-Channel | 890pF @ 25V | 39m Ω @ 11A, 10V | 4V @ 250μA | 22A Ta | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NP88N04NUG-S18-AY | Renesas Electronics America | $12.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np88n04nugs18ay-datasheets-4436.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | 88A | 40V | 1.8W Ta 200W Tc | N-Channel | 15000pF @ 25V | 3.4m Ω @ 44A, 10V | 4V @ 250μA | 88A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP80N06MLG-S18-AY | Renesas Electronics America | $1.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np80n06plge1bay-datasheets-9521.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 8541.29.00.95 | SINGLE | 3 | 1 | FET General Purpose Power | 17 ns | 13ns | 7 ns | 70 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.8W Ta 115W Tc | TO-220AB | 0.0086Ohm | N-Channel | 6900pF @ 25V | 8.6m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 128nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NP82N04PDG-E1-AY | Renesas Electronics America | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np82n04pdge1ay-datasheets-4448.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 68ns | 11 ns | 73 ns | 82A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 143W Tc | 328A | 0.008Ohm | N-Channel | 9000pF @ 25V | 3.5m Ω @ 41A, 10V | 2.5V @ 250μA | 82A Tc | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NP80N055NDG-S18-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np80n055ndgs18ay-datasheets-4454.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 16 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | No | SINGLE | 3 | 1.8W | 1 | FET General Purpose Power | R-PSIP-T3 | 17 ns | 13ns | 7 ns | 77 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 115W Tc | 200A | 0.0069Ohm | N-Channel | 6900pF @ 25V | 6.9m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NP80N055KLE-E1-AY | Renesas Electronics America | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np80n055klee1ay-datasheets-4457.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 10ns | 11 ns | 62 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 120W Tc | 200A | N-Channel | 4400pF @ 25V | 11m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PMN20EN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | SC-74, SOT-457 | 6 | 2013-06-14 00:00:00 | 30V | 545mW Ta | N-Channel | 630pF @ 15V | 20m Ω @ 6.7A, 10V | 2.5V @ 250μA | 6.7A Tj | 18.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP55N03SUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np55n03suge1ay-datasheets-4463.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | No | SINGLE | GULL WING | 3 | 1.2W | 1 | FET General Purpose Power | R-PSSO-G2 | 32 ns | 52ns | 12 ns | 73 ns | 55A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.2W Ta 77W Tc | TO-252AA | 220A | 0.005Ohm | N-Channel | 5300pF @ 25V | 5m Ω @ 28A, 10V | 4V @ 250μA | 55A Tc | 93nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NP88N075KUE-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np88n075kuee1ay-datasheets-4467.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1.8W Ta 288W Tc | 88A | 352A | 0.0085Ohm | 450 mJ | N-Channel | 12300pF @ 25V | 8.5m Ω @ 44A, 10V | 4V @ 250μA | 88A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK40P03M1(T6RDS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 33W | DPAK | 1.15nF | 15ns | 14 ns | 40A | 20V | 30V | N-Channel | 1150pF @ 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100μA | 40A Ta | 17.5nC @ 10V | 10.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4A60DB(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 18ns | 8 ns | 3.7A | 30V | 600V | 35W Tc | N-Channel | 540pF @ 25V | 2 Ω @ 1.9A, 10V | 4.4V @ 1mA | 3.7A Ta | 11nC @ 10V | 10V | ±30V |
