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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 5LN01M-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/onsemiconductor-5ln01mtlh-datasheets-8513.pdf | SC-70, SOT-323 | Lead Free | 6 Weeks | 3 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 3 | Single | 150mW | FET General Purpose Powers | 18 ns | 42ns | 105 ns | 190 ns | 100mA | 10V | 150mW Ta | 0.1A | 50V | N-Channel | 6.6pF @ 10V | 7.8 Ω @ 50mA, 4V | 100mA Ta | 1.57nC @ 10V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI1489EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1489edht1ge3-datasheets-8490.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 15 Weeks | 7.512624mg | 48mOhm | 6 | EAR99 | No | DUAL | GULL WING | 6 | 1 | Single | 156W | 1 | Other Transistors | 90 ns | 170ns | 630 ns | 690 ns | 2A | 5V | SILICON | SWITCHING | 8V | 2.8W Tc | 2A | -8V | P-Channel | 48m Ω @ 3A, 4.5V | 700mV @ 250μA | 2A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||
| DMG4N60SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg4n60sk313-datasheets-8334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3.7A | 600V | 48W Ta | N-Channel | 532pF @ 25V | 2.3 Ω @ 2A, 10V | 4.5V @ 250μA | 3.7A Tc | 14.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR172DP-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir172dpt1ge3-datasheets-8454.pdf | PowerPAK® SO-8 | Lead Free | 5 | 12 Weeks | 506.605978mg | Unknown | 12.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 19 ns | 19ns | 13 ns | 19 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.5V | 29.8W Tc | 50A | 22 mJ | N-Channel | 997pF @ 15V | 2.5 V | 8.9m Ω @ 16.1A, 10V | 2.5V @ 250μA | 20A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| 3LP01S-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-3lp01stle-datasheets-8420.pdf | SC-75, SOT-416 | 1.6mm | 750μm | 800μm | Lead Free | 3 | 4 Weeks | 3 | LIFETIME (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | 8541.21.00.95 | e6 | YES | DUAL | GULL WING | 3 | Single | 150mW | 1 | Other Transistors | 24 ns | 55ns | 130 ns | 120 ns | 100mA | 10V | SILICON | SWITCHING | 30V | 150mW Ta | 0.1A | -30V | P-Channel | 7.5pF @ 10V | 10.4 Ω @ 50mA, 4V | 100mA Ta | 1.43nC @ 10V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||
| NVMFS5C430NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-nvmfs5c430nlaft1g-datasheets-0686.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 110W Tc | 900A | 0.0022Ohm | 493 mJ | N-Channel | 4300pF @ 20V | 1.5m Ω @ 50A, 10V | 2V @ 250μA | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C410NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c410naft1g-datasheets-8527.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 250μA | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUXFN8403TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-auxfn8403tr-datasheets-8365.pdf | 8-TQFN Exposed Pad | 8-PQFN (5x6) | 3.174nF | 95A | 40V | 94W Tc | N-Channel | 3174pF @ 25V | 3.3mOhm @ 50A, 10V | 3.9V @ 100μA | 95A Tc | 98nC @ 10V | 3.3 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP20N60CFDHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp20n60cfdhksa1-datasheets-8370.pdf | TO-220-3 | 3 | 208W | 1 | PG-TO220-3 | 2.4nF | 12 ns | 15ns | 6.4 ns | 59 ns | 20.7A | 20V | 650V | 208W Tc | N-Channel | 2400pF @ 25V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 20.7A Tc | 124nC @ 10V | 220 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R299CPHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50r299cphksa1-datasheets-8375.pdf | TO-220-3 | 3 | 104W | 1 | PG-TO220-3-1 | 1.19nF | 35 ns | 14ns | 12 ns | 80 ns | 12A | 20V | 550V | 104W Tc | N-Channel | 1190pF @ 100V | 299mOhm @ 6.6A, 10V | 3.5V @ 440μA | 12A Tc | 31nC @ 10V | 299 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMJ70H1D3SI3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | TO-251-3 Stub Leads, IPak | 8 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4.6A | 700V | 41W Tc | N-Channel | 351pF @ 50V | 1.3 Ω @ 2.5A, 10V | 4V @ 250μA | 4.6A Tc | 13.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP024N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi024n06n3gxksa1-datasheets-3703.pdf | TO-220-3 | No | 250W | 1 | PG-TO220-3 | 23nF | 120A | 20V | 60V | 250W Tc | N-Channel | 23000pF @ 30V | 2.4mOhm @ 100A, 10V | 4V @ 196μA | 120A Tc | 275nC @ 10V | 2.4 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7885TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7885trpbf-datasheets-8346.pdf | 8-VQFN | 5 | 8 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N5 | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 3.6W Ta 156W Tc | 250A | 0.0039Ohm | 202 mJ | N-Channel | 2311pF @ 40V | 3.9m Ω @ 50A, 10V | 3.6V @ 150μA | 22A Ta | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7882TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7882trpbf-datasheets-8356.pdf | 8-VQFN | 5 | 8 | EAR99 | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N5 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 4W Ta 195W Tc | 290A | 0.0031Ohm | 704 mJ | N-Channel | 3186pF @ 40V | 3.1m Ω @ 50A, 10V | 3.6V @ 250μA | 26A Ta | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP039N04LGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp039n04lghksa1-datasheets-8407.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 94W Tc | TO-220AB | 80A | 400A | 0.0052Ohm | 60 mJ | N-Channel | 6100pF @ 25V | 3.9m Ω @ 80A, 10V | 2V @ 45μA | 80A Tc | 78nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP35CN10NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp35cn10ngxksa1-datasheets-8410.pdf | TO-220-3 | 3 | EAR99 | compliant | NO | SINGLE | 1 | FET General Purpose Powers | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 58W Tc | TO-220AB | 27A | 108A | 0.035Ohm | 47 mJ | N-Channel | 1570pF @ 50V | 35m Ω @ 27A, 10V | 4V @ 29μA | 27A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPU60R2K0C6AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipu60r2k0c6akma1-datasheets-8413.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 2.4A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 22.3W Tc | 6A | 2Ohm | 11 mJ | N-Channel | 140pF @ 100V | 2 Ω @ 760mA, 10V | 3.5V @ 60μA | 2.4A Tc | 6.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NDD02N40T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd02n40t4g-datasheets-8422.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 2 Weeks | 3 | LAST SHIPMENTS (Last Updated: 19 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | GULL WING | 3 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 5 ns | 7ns | 4 ns | 14 ns | 1.7A | 20V | SILICON | DRAIN | 400V | 400V | 39W Tc | 6.9A | 0.0055Ohm | 120 mJ | N-Channel | 121pF @ 25V | 5.5 Ω @ 220mA, 10V | 2V @ 250μA | 1.7A Tc | 5.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NDT01N60T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/onsemiconductor-ndt01n60t1g-datasheets-8440.pdf | TO-261-4, TO-261AA | Lead Free | 4 | 4 | LAST SHIPMENTS (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | GULL WING | 4 | Single | 2.5W | 1 | FET General Purpose Power | 8 ns | 5.1ns | 21.3 ns | 16.5 ns | 400mA | 30V | SILICON | DRAIN | 2.5W Tc | 600V | N-Channel | 160pF @ 25V | 8.5 Ω @ 200mA, 10V | 3.7V @ 50μA | 400mA Tc | 7.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| DMJ70H1D3SH3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmj70h1d3sh3-datasheets-8342.pdf | TO-251-3 Stub Leads, IPak | 8 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4.6A | 700V | 41W Tc | N-Channel | 351pF @ 50V | 1.3 Ω @ 2.5A, 10V | 4V @ 250μA | 4.6A Tc | 13.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2192WP-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2192wpele-datasheets-8264.pdf | 8-PowerWDFN | 5 | 16 Weeks | 8 | yes | EAR99 | DUAL | NO LEAD | 260 | 8 | NOT SPECIFIED | 25W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-N5 | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 25W Tc | 20A | 0.23Ohm | N-Channel | 710pF @ 25V | 230m Ω @ 5A, 10V | 10A Ta | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C670NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-nvmfs5c670nlwfaft1g-datasheets-4576.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | No SVHC | 8 | ACTIVE, NOT REC (Last Updated: 14 hours ago) | yes | Tin | not_compliant | e3 | AEC-Q101 | DUAL | FLAT | 1 | R-PDSO-F5 | 11 ns | 60ns | 4 ns | 15 ns | 71A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 2V | 3.6W Ta 61W Tc | 440A | 166 mJ | N-Channel | 1400pF @ 25V | 6.1m Ω @ 35A, 10V | 2V @ 250μA | 17A Ta 71A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| MCH6421-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch6421tle-datasheets-3951.pdf | 6-SMD, Flat Leads | Lead Free | No SVHC | 88 | yes | 7.5 ns | 26ns | 32 ns | 38 ns | 5.5A | 12V | 20V | 1.3V | 1.5W Ta | N-Channel | 410pF @ 10V | 38m Ω @ 2A, 4.5V | 1.3V @ 1mA | 5.5A Ta | 5.1nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT69M8LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt69m8lss13-datasheets-8330.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 9.8A | 60V | 1.25W Ta | N-Channel | 1925pF @ 30V | 12m Ω @ 13.5A, 10V | 2V @ 250μA | 9.8A Ta | 33.5nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6344-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch6344tlh-datasheets-6839.pdf | 6-SMD, Flat Leads | Lead Free | No SVHC | 88 | yes | 4.5 ns | 4.2ns | 10.6 ns | 20 ns | 2A | 20V | 30V | -2.6V | 800mW Ta | P-Channel | 172pF @ 10V | 150m Ω @ 1A, 10V | 2.6V @ 1mA | 2A Ta | 3.9nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7739L2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7739l2tr-datasheets-9830.pdf | DirectFET™ Isometric L8 | 9 | EAR99 | HIGH RELIABILITY | compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XBCC-N9 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 125W Tc | 46A | 1070A | 0.001Ohm | 160 mJ | N-Channel | 11880pF @ 25V | 1m Ω @ 160A, 10V | 4V @ 250μA | 46A Ta 270A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SCH1331-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/onsemiconductor-sch1331tlh-datasheets-4188.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | No SVHC | 6 | yes | e6 | Tin/Bismuth (Sn/Bi) | DUAL | FLAT | 1 | 8.8 ns | 80ns | 50 ns | 41 ns | 3A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | -1.3V | 1W Ta | 3A | 0.084Ohm | P-Channel | 405pF @ 6V | 84m Ω @ 1.5A, 4.5V | 1.3V @ 1mA | 3A Ta | 5.6nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| IPP086N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2014 | /files/infineontechnologies-ipp086n10n3ghksa1-datasheets-8293.pdf | TO-220-3 | 100V | 125W Tc | N-Channel | 3980pF @ 50V | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6444-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch6444tlh-datasheets-4192.pdf | 6-SMD, Flat Leads | Lead Free | No SVHC | 88 | yes | 4.2 ns | 4.7ns | 5.7 ns | 15 ns | 2.5A | 20V | 35V | 2.6V | 800mW Ta | N-Channel | 186pF @ 20V | 98m Ω @ 1.5A, 10V | 2.6V @ 1mA | 2.5A Ta | 4nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP045N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp045n10n3ghksa1-datasheets-8303.pdf | TO-220-3 | Lead Free | 3 | No | PG-TO220-3 | 8.41nF | 27 ns | 59ns | 14 ns | 48 ns | 100A | 20V | 100V | 214W Tc | 4.2mOhm | 100V | N-Channel | 8410pF @ 50V | 4.5mOhm @ 100A, 10V | 3.5V @ 150μA | 100A Tc | 117nC @ 10V | 4.5 mΩ | 6V 10V | ±20V |
