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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| HUFA76645S3ST-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-hufa76645s3stf085-datasheets-9691.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 1.31247g | 15mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 106ns | 175 ns | 69 ns | 75A | 16V | SILICON | DRAIN | 310W Tc | 100V | N-Channel | 4400pF @ 25V | 14m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 153nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUP53P06-20-GE3 | Vishay Siliconix | $1.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | Lead Free | 15 Weeks | 3 | yes | EAR99 | Tin | No | 260 | 30 | 3.1W | 1 | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | Single | 60V | 3.1W Ta 104.2W Tc | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76419D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-hufa76419d3st-datasheets-9663.pdf | 60V | 20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 260.37mg | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 75W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.5 ns | 35ns | 50 ns | 50 ns | 20A | 16V | SILICON | DRAIN | SWITCHING | 75W Tc | TO-252AA | 60V | N-Channel | 900pF @ 25V | 37m Ω @ 20A, 10V | 3V @ 250μA | 20A Tc | 27.5nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| FDS2672-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds2672f085-datasheets-9655.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 22 ns | 10ns | 10 ns | 35 ns | 3.9A | 20V | SILICON | SWITCHING | 2.5W Ta | 0.07Ohm | 45 pF | 200V | N-Channel | 2535pF @ 100V | 70m Ω @ 3.9A, 10V | 4V @ 250μA | 3.9A Ta | 46nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDD4685-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd4685f085-datasheets-9753.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 260.37mg | 3 | ACTIVE (Last Updated: 2 days ago) | yes | ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | FDD4685 | Single | 69W | 1 | Other Transistors | R-PSSO-G2 | 8 ns | 15ns | 14 ns | 34 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 40V | 83W Tc | 40A | 0.027Ohm | -40V | P-Channel | 2380pF @ 20V | 27m Ω @ 8.4A, 10V | 3V @ 250μA | 8.4A Ta 32A Tc | 27nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFHM8337TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8337trpbf-datasheets-9603.pdf | 8-PowerTDFN | Lead Free | 5 | 17 Weeks | No SVHC | 9.4mOhm | 8 | EAR99 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 9 ns | 11ns | 5.6 ns | 9.9 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta 25W Tc | 35A | 94A | 30V | N-Channel | 755pF @ 15V | 12.4m Ω @ 12A, 10V | 2.35V @ 25μA | 12A Ta | 8.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFHM8235TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8235trpbf-datasheets-9675.pdf | 8-PowerTDFN | Lead Free | 5 | 10 Weeks | No SVHC | 6.2mOhm | 8 | EAR99 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 7.9 ns | 16ns | 5.2 ns | 7.5 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 3W Ta 30W Tc | 50A | 240A | 25V | N-Channel | 1040pF @ 10V | 7.7m Ω @ 20A, 10V | 2.35V @ 25μA | 16A Ta | 12nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PMT21EN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-pmt21en135-datasheets-8897.pdf | TO-261-4, TO-261AA | Lead Free | 4 | No | 4 | 1.76W | 1 | 4 ns | 29ns | 77 ns | 172 ns | 7.4A | 20V | 30V | 820mW Ta 8.33W Tc | N-Channel | 588pF @ 15V | 21m Ω @ 7.4A, 10V | 2.5V @ 250μA | 7.4A Ta | 14.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMT200EN,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-261-4, TO-261AA | YES | 4 | FET General Purpose Power | Single | 100V | 800mW Ta 8.3W Tc | 1.8A | N-Channel | 475pF @ 80V | 235m Ω @ 1.5A, 10V | 2.5V @ 250μA | 1.8A Ta | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8334TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8334trpbf-datasheets-9565.pdf | 8-PowerTDFN | Lead Free | 5 | 17 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 1 | 2.7W | 1 | FET General Purpose Power | S-PDSO-F5 | 8.3 ns | 14ns | 4.6 ns | 7 ns | 13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.8V | 2.7W Ta 28W Tc | 25A | 0.009Ohm | 35 mJ | N-Channel | 1180pF @ 10V | 9m Ω @ 20A, 10V | 2.35V @ 25μA | 13A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| 2N6660JTXP02 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 18 Weeks | 3 | EAR99 | unknown | 8541.21.00.95 | BOTTOM | WIRE | 2 | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | 10 pF | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV170UN,215 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmv170un215-datasheets-8970.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 20V | 325mW Ta 1.14W Tc | N-Channel | 83pF @ 10V | 165m Ω @ 1A, 4.5V | 1V @ 250μA | 1A Ta | 1.65nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8330TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8330trpbf-datasheets-9584.pdf | 8-PowerTDFN | Lead Free | 5 | 17 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 1 | 2.7W | 1 | FET General Purpose Power | S-PDSO-F5 | 9.2 ns | 15ns | 5.7 ns | 10 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.7W Ta 33W Tc | 55A | 0.0066Ohm | 42 mJ | 30V | N-Channel | 1450pF @ 25V | 6.6m Ω @ 20A, 10V | 2.35V @ 25μA | 16A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| VP0808B-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | EAR99 | No | 8541.29.00.75 | BOTTOM | WIRE | 1 | 11 ns | 30ns | 20 ns | 20 ns | 880mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 6.25W Ta | 0.88A | 3A | 5Ohm | 25 pF | P-Channel | 150pF @ 25V | 60ns | 55ns | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIS448DN-T1-GE3 | Vishay Siliconix | $3.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis448dnt1ge3-datasheets-9595.pdf | PowerPAK® 1212-8 | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | FET General Purpose Powers | S-PDSO-C5 | 35A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.7W Ta 52W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1575pF @ 15V | 5.6m Ω @ 10A, 10V | 2.3V @ 250μA | 35A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIS330DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis330dnt1ge3-datasheets-9599.pdf | PowerPAK® 1212-8 | 3.15mm | 1.12mm | 3.15mm | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-C5 | 16 ns | 19 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.7W Ta 52W Tc | 70A | 0.0056Ohm | 20 mJ | 30V | N-Channel | 1300pF @ 15V | 5.6m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFHM8228TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm8228trpbf-datasheets-9613.pdf | 8-PowerTDFN | Lead Free | 5 | 10 Weeks | No SVHC | 4.2mOhm | 8 | EAR99 | No | DUAL | FLAT | 1 | 1 | FET General Purpose Power | S-PDSO-F5 | 11 ns | 22ns | 6.2 ns | 13 ns | 19A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.8V | 2.8W Ta 34W Tc | 65A | 260A | 50 mJ | N-Channel | 1667pF @ 10V | 5.2m Ω @ 20A, 10V | 2.35V @ 25μA | 19A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDD6637-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/onsemiconductor-fdd6637f085-datasheets-9642.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 35V | 35V | 68W Tc | 21A | 0.0116Ohm | 61 mJ | P-Channel | 2370pF @ 20V | 11.6m Ω @ 14A, 10V | 3V @ 250μA | 63nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS38N60L | Vishay Siliconix | $75.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps38n60lpbf-datasheets-4956.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | 3 | No | 1 | Single | SUPER-247™ (TO-274AA) | 7.99nF | 44 ns | 130ns | 69 ns | 92 ns | 38A | 30V | 600V | 540W Tc | 150mOhm | 600V | N-Channel | 7990pF @ 25V | 150mOhm @ 23A, 10V | 5V @ 250μA | 38A Tc | 320nC @ 10V | 150 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS334DN-T1-GE3 | Vishay Siliconix | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis334dnt1ge3-datasheets-9524.pdf | PowerPAK® 1212-8 | 5 | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 3.8W | 1 | FET General Purpose Power | S-XDSO-C5 | 9 ns | 10ns | 8 ns | 15 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 50W Tc | 50A | 30V | N-Channel | 640pF @ 15V | 11.3m Ω @ 10A, 10V | 2.4V @ 250μA | 20A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| VP0808B-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-vp1008b-datasheets-9502.pdf | -280mA | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | 3 | 9 Weeks | Unknown | 3 | EAR99 | e3 | MATTE TIN | BOTTOM | WIRE | NOT SPECIFIED | 2 | 1 | Single | NOT SPECIFIED | 1 | Not Qualified | 11 ns | 30ns | 20 ns | 20 ns | -3A | 20V | SILICON | DRAIN | SWITCHING | 80V | 6.25W Ta | 0.88A | 5Ohm | 25 pF | -80V | P-Channel | 150pF @ 25V | 5 Ω @ 1A, 10V | 4.5V @ 1mA | 880mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFHM9391TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm9391trpbf-datasheets-9540.pdf | 8-PowerTDFN | Lead Free | 5 | 10 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 1 | 2.6W | 1 | Other Transistors | S-PDSO-F5 | 11 ns | 27ns | 60 ns | 72 ns | 11A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -1.8V | 2.6W Ta | 90A | 0.0225Ohm | 75 mJ | -30V | P-Channel | 1543pF @ 25V | 14.6m Ω @ 11A, 10V | 2.4V @ 25μA | 11A Ta | 16nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| VP0300B-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | 13 Weeks | 3 | 800mW | Single | 6.25W | 1 | 150pF | -3A | 20V | 30V | 2.5Ohm | -30V | P-Channel | 150pF @ 15V | 2.5Ohm @ 1A, 12V | 4.5V @ 1mA | 320mA Ta | 2.5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP26N60L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp26n60lpbf-datasheets-4818.pdf | TO-247-3 | TO-247-3 | 600V | 470W Tc | N-Channel | 5020pF @ 25V | 250mOhm @ 16A, 10V | 5V @ 250μA | 26A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD113 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd113pbf-datasheets-5477.pdf | 4-DIP (0.300, 7.62mm) | 2 | 4 | EAR99 | unknown | DUAL | NOT SPECIFIED | 2 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDIP-T2 | 800mA | SILICON | DRAIN | SWITCHING | 60V | 60V | 1W Tc | 0.8A | 0.8Ohm | 25 pF | N-Channel | 200pF @ 25V | 800m Ω @ 800mA, 10V | 4V @ 250μA | 800mA Tc | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660-2 | Vishay Siliconix | $25.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | 3 | No | 725mW | 1 | TO-205AD (TO-39) | 50pF | 990mA | 20V | 60V | 725mW Ta 6.25W Tc | N-Channel | 50pF @ 25V | 3Ohm @ 1A, 10V | 2V @ 1mA | 990mA Tc | 3 Ω | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1004P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 15 Weeks | 14 | No | 2W | 4 | 460mA | 20V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR814DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir814dpt1ge3-datasheets-9493.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | EAR99 | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 6.25W | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-C5 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1V | 6.25W Ta 104W Tc | 0.0029Ohm | N-Channel | 3800pF @ 20V | 2.1m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 86nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-06AP-T4E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0306ape3-datasheets-0471.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | TO-252 | 3.8nF | 90A | 30V | 10W Ta 83W Tc | 5.7MOhm | N-Channel | 3800pF @ 15V | 5.7mOhm @ 20A, 10V | 2.4V @ 250μA | 90A Tc | 95nC @ 10V | 5.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1004P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | CDIP | 19.56mm | 3.05mm | 7.87mm | Lead Free | 14 | no | No | e0 | Tin/Lead (Sn/Pb) | 2W | 14 | 4 | 2W | FET General Purpose Power | 460mA | 20V | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 3.5Ohm | 60V | 5V 10V | ±20V |
