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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFS7530-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs7530trl7pp-datasheets-6437.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 16 Weeks | 1.59999g | No SVHC | 7 | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | FET General Purpose Power | 24 ns | 102ns | 79 ns | 168 ns | 240A | 3.7V | Single | 60V | 3.7V | 375W Tc | N-Channel | 12960pF @ 25V | 1.4m Ω @ 100A, 10V | 3.7V @ 250μA | 240A Tc | 354nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| 2N6802 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AD, TO-39-3 Metal Can | 3 | 3 | 8541.21.00.95 | BOTTOM | WIRE | 1 | FET General Purpose Power | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 800mW Ta 25W Tc | TO-205AF | 1.6Ohm | N-Channel | 1.5 Ω @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 4.46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| JANTXV2N6766T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | EAR99 | No | e0 | TIN LEAD | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Powers | Qualified | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200V | 200V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| JANTXV2N6798 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/557 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | 3 | no | EAR99 | HIGH RELIABILITY | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Qualified | 5.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 800mW Ta 25W Tc | 0.42Ohm | N-Channel | 420m Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Tc | 42.07nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| JANTX2N6758 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | no | EAR99 | Lead, Tin | not_compliant | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 75W | 1 | Qualified | O-MBFM-P2 | 85ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 4W Ta 75W Tc | 9A | 36A | 0.49Ohm | N-Channel | 490m Ω @ 9A, 10V | 4V @ 250μA | 9A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| FDS4435BZ-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fds4435bzf085-datasheets-2213.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 230.4mg | 20MOhm | 8 | ACTIVE (Last Updated: 12 hours ago) | yes | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 10 ns | 6ns | 12 ns | 30 ns | 8.8A | 25V | SILICON | SWITCHING | 30V | 2.5W Ta | 345 pF | -30V | P-Channel | 1845pF @ 15V | 20m Ω @ 8.8A, 10V | 3V @ 250μA | 8.8A Ta | 40nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||
| 2N6849U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6849u-datasheets-1922.pdf | 18-CLCC | No | 6.5A | 20V | 100V | 800mW Ta 25W Tc | P-Channel | 300m Ω @ 4.1A, 10V | 4V @ 250μA | 6.5A Tc | 34.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N7228U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7227u-datasheets-1790.pdf | TO-267AB | 3 | 3 | no | HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Qualified | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 4W Ta 150W Tc | TO-276AB | 48A | 0.515Ohm | 750 mJ | N-Channel | 515m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| 2N6766 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 3 | no | EAR99 | unknown | e0 | TIN LEAD OVER NICKEL | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | 190ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| JAN2N6764 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 3 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | 190ns | 38A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4W Ta 150W Tc | 152A | 0.055Ohm | 150 mJ | N-Channel | 65m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| JANTX2N7227 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/592 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | EAR99 | AVALANCHE RATED | No | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | 3 | 4W | 1 | FET General Purpose Powers | Qualified | S-MSFM-P3 | 14A | 20V | SILICON | SINGLE | ISOLATED | SWITCHING | 400V | 400V | 4W Ta 150W Tc | 56A | 700 mJ | N-Channel | 415m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| 2N6790U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788u-datasheets-1767.pdf | 18-CLCC | 15 | EAR99 | e4 | GOLD OVER NICKEL | QUAD | NO LEAD | 18/15 | 1 | R-CQCC-N15 | 2.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 200V | 200V | 800mW Tc | 11A | 0.85Ohm | N-Channel | 800m Ω @ 2.25A, 10V | 4V @ 250μA | 2.8A Tc | 14.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT12057JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SOT-227-4, miniBLOC | 4 | 1 | FET General Purpose Power | 19A | 1200V | 520W Tc | N-Channel | 6200pF @ 25V | 570m Ω @ 10A, 10V | 5V @ 2.5mA | 19A Tc | 290nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6796U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | EAR99 | QUAD | NO LEAD | 16 | 1 | Not Qualified | R-CQCC-N15 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 800mW Ta 25W Tc | 8A | 0.195Ohm | N-Channel | 180m Ω @ 5A, 10V | 4V @ 250mA | 8A Tc | 6.34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| 2N6802U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | No | FET General Purpose Power | 30 ns | 30ns | 30 ns | 55 ns | 2.5A | 20V | Single | 500V | 800mW Ta 25W Tc | N-Channel | 1.5 Ω @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 4.46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AON6544 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 8 | FET General Purpose Power | 85A | Single | 30V | 7.4W Ta 83W Tc | N-Channel | 5910pF @ 15V | 1.4m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Ta 85A Tc | 120nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6784 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6782-datasheets-1736.pdf | TO-205AF Metal Can | 3 | EAR99 | BOTTOM | WIRE | 1 | O-MBCY-W3 | 2.25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 800mW Ta 15W Tc | 2.81Ohm | N-Channel | 1.5 Ω @ 1.5A, 0V | 4V @ 250μA | 2.25A Tc | 8.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2N7228 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n7224-datasheets-1801.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | HIGH RELIABILITY | Lead, Tin | 8541.29.00.95 | e4 | Gold (Au) - with Nickel (Ni) barrier | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 4W Ta 150W Tc | 48A | 0.515Ohm | N-Channel | 415m Ω @ 8A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| JAN2N6768T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | No | MIL-19500 | SINGLE | PIN/PEG | 3 | 1 | Qualified | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 400V | 400V | 4W Ta 150W Tc | N-Channel | 400m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2N6800U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | No | FET General Purpose Power | 30 ns | 35ns | 35 ns | 35 ns | 3A | 20V | Single | 400V | 800mW Ta 25W Tc | 3A | N-Channel | 1 Ω @ 2A, 10V | 4V @ 250μA | 3A Tc | 5.75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N6762 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | HIGH RELIABILITY | 8541.29.00.95 | BOTTOM | PIN/PEG | 2 | 1 | FET General Purpose Power | O-MBFM-P2 | 40ns | 4.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 4W Ta 75W Tc | 18A | N-Channel | 1.8 Ω @ 4.5A, 10V | 4V @ 250μA | 4.5A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2N6766T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | EAR99 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Power | Not Qualified | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200V | 200V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 90m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 115nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2N6790 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788-datasheets-1773.pdf | TO-205AF Metal Can | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 1 | FET General Purpose Power | O-MBCY-W3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 800mW Tc | 14A | 0.85Ohm | N-Channel | 800m Ω @ 2.25A, 10V | 4V @ 250μA | 3.5A Tc | 14.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2N6849 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6849-datasheets-1758.pdf | TO-205AF Metal Can | 3 | 3 | no | EAR99 | HIGH RELIABILITY | e0 | TIN LEAD | BOTTOM | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 800mW | 1 | Other Transistors | Not Qualified | 6.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 800mW Ta 25W Tc | P-Channel | 320m Ω @ 6.5A, 10V | 4V @ 250μA | 6.5A Tc | 34.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| 2N6764 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | no | EAR99 | unknown | e0 | TIN LEAD OVER NICKEL | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | 38A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 4W Ta 150W Tc | 0.065Ohm | N-Channel | 65m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| 2N6798U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6802u-datasheets-1763.pdf | 18-CLCC | 15 | EAR99 | QUAD | NO LEAD | 18 | 1 | Not Qualified | R-CQCC-N15 | 5.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | 200V | 200V | 800mW Ta 25W Tc | 0.42Ohm | N-Channel | 400m Ω @ 3.5A, 10V | 4V @ 250μA | 5.5A Tc | 5.29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| 2N6804 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx2n6804-datasheets-3638.pdf | TO-204AA, TO-3 | 2 | 3 | no | EAR99 | unknown | e0 | TIN LEAD | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | O-MBFM-P2 | 140ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 4W Ta 75W Tc | P-Channel | 360m Ω @ 11A, 10V | 4V @ 250μA | 11A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| ZXMP3F37N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp3f37n8ta-datasheets-2177.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 1 | Other Transistors | 3.5 ns | 4.9ns | 28 ns | 44 ns | 6.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.56W Ta | 10.7A | 0.025Ohm | P-Channel | 1678pF @ 15V | 25m Ω @ 7.1A, 10V | 2.5V @ 250μA | 6.4A Ta | 31.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| 2N6798 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-205AF Metal Can | 3 | EAR99 | 8541.21.00.95 | e0 | TIN LEAD OVER NICKEL | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBCY-W3 | 5.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 800mW Ta 25W Tc | 0.42Ohm | N-Channel | 400m Ω @ 3.5A, 10V | 4V @ 250μA | 5.5A Tc | 5.29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2N6788 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6788-datasheets-1773.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | No | e0 | TIN LEAD | BOTTOM | WIRE | 1 | FET General Purpose Power | 40 ns | 70ns | 70 ns | 40 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 800mW Tc | 6A | 24A | N-Channel | 300m Ω @ 3.5A, 10V | 4V @ 250μA | 6A Tc | 18nC @ 10V | 10V | ±20V |
