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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | JEDEC-95 Code | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BLM7G1822S-40ABGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 3 (168 Hours) | 65V | 2.17GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blm7g1822s20pby-datasheets-7792.pdf | SOT-1212-2 | 13 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 31.5dB | 2W | 20mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLM7G1822S-20PBY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.17GHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-blm7g1822s20pby-datasheets-7792.pdf | SOT-1211-1 | 13 Weeks | EAR99 | unknown | NOT SPECIFIED | BLM7G1822 | NOT SPECIFIED | 32.3dB | 2W | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||
| BLP10H603AZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 104V | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blp10h603az-datasheets-7784.pdf | 12-VDFN Exposed Pad | 12 | 13 Weeks | yes | EAR99 | unknown | IEC-60134 | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 22.8dB | R-PDSO-N12 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 2.5W | MO-229 | 15mA | LDMOS | 50V | ||||||||||||||||||||||||||||||
| BLP8G10S-45PJ | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 952.5MHz~957.5MHz | ROHS3 Compliant | 2006 | /files/nxpusainc-blp8g10s45pgj-datasheets-7516.pdf | SOT-1223-1 | BLP8G10 | 20.8dB | 2.5W | 224mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6VP8600HR6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 130V | 860MHz | ROHS3 Compliant | 2011 | NI-1230 | EAR99 | MRFE6VP8600 | 19.3dB | 125W | 1.4A | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PTVA120251EA-V2-R0 | Cree/Wolfspeed | $44.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 105V | 1.2GHz~1.4GHz | RoHS Compliant | H-36265-2 | 12 Weeks | 17dB | H-36265-2 | 50W | 50mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 275-101N30A-00 | IXYS-RF |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DE | Tube | 1 (Unlimited) | 100V | 2009 | /files/ixysrf-275101n30a00-datasheets-7804.pdf | 6-SMD, Flat Lead Exposed Pad | 550W | 30A | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTFB212503EL-V1-R0 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.17GHz | H-33288-6 | 18.1dB | 55W | 1.85A | LDMOS | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLP10H610Z | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 104V | 860MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blp10h610z-datasheets-7807.pdf | 12-VDFN Exposed Pad | 12 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | NO LEAD | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | 22dB | R-PDSO-N12 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 104V | METAL-OXIDE SEMICONDUCTOR | 10W | MO-229 | 60mA | LDMOS (Dual), Common Source | 50V | ||||||||||||||||||||||||||||||||
| AFT18HW355SR6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 65V | 1.88GHz | ROHS3 Compliant | 2013 | /files/nxpusainc-aft18hw355sr5-datasheets-7536.pdf | NI-1230S | 10 Weeks | EAR99 | 8541.29.00.40 | 15.2dB | 63W | 1.1A | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1304NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 133V | 512MHz | ROHS3 Compliant | 2014 | TO-270AA | 10 Weeks | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | 260 | 40 | 25.4dB | 25W | 10mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||
| PD55025TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -65°C | 40V | 500MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd55025tre-datasheets-7773.pdf | 7A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | EAR99 | HIGH RELIABILITY | 79W | DUAL | GULL WING | NOT SPECIFIED | PD55025 | 10 | NOT SPECIFIED | 1 | 14.5dB | Not Qualified | R-PDSO-G2 | 7A | 20V | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 25W | 200mA | 7A | LDMOS | 12.5V | ||||||||||||||||||||||||
| PTFA220121M-V4 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.14GHz | RoHS Compliant | /files/creewolfspeed-ptfa220121mv4-datasheets-7819.pdf | 10-LDFN Exposed Pad | 16.2dB | PG-SON-10 | 9.3W | 150mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G27LS-100V,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.5GHz~2.7GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g27ls100v112-datasheets-7928.pdf | SOT-1244B | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF8G27 | NOT SPECIFIED | 1 | 17dB | R-CDFP-F6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 900mA | LDMOS | 28V | |||||||||||||||||||||||||||||||
| BLC9G22LS-160VTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.11GHz~2.2GHz | /files/ampleonusainc-blc9g22ls160vtz-datasheets-7823.pdf | SOT-1271-2 | 13 Weeks | 18.4dB | 35W | 2.8μA | 864mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CE3521M4 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Strip | 1 (Unlimited) | 4V | 20GHz | ROHS3 Compliant | 15mA | SC-82A, SOT-343 | 7 Weeks | 11.9dB | 4-Super Mini Mold | 1.05dB | 125mW | 15mA | 10mA | pHEMT FET | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BLF189XRBSU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 135V | 108MHz | /files/ampleonusainc-blf189xrbsu-datasheets-7826.pdf | SOT539B | 13 Weeks | 26dB | 1900W | 2.8μA | 200mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC8G21LS-160AVZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.88GHz~2.03GHz | ROHS3 Compliant | 2014 | /files/ampleonusainc-blc8g21ls160avz-datasheets-7833.pdf | SOT1275-1 | 13 Weeks | 15dB | DFM6 | 22.5W | 200mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT26H050W26SR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.69GHz | ROHS3 Compliant | 2006 | /files/nxpusainc-aft26hw050gsr3-datasheets-7514.pdf | NI-780S-4L4L-8 | 10 Weeks | EAR99 | 8541.29.00.40 | 260 | 150°C | 40 | FET General Purpose Power | 14.2dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 9W | 100mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||
| PD85035STR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stevaltdr031v1-datasheets-4788.pdf | 8A | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) | 2 | 25 Weeks | 3 | yes | EAR99 | 95W | DUAL | FLAT | NOT SPECIFIED | PD85035 | 10 | Single | NOT SPECIFIED | 95W | 1 | FET General Purpose Power | 17dB | Not Qualified | R-PDSO-F2 | 8A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 40W | 15W | 350mA | 8A | 40V | LDMOS | 13.6V | |||||||||||||||||||||
| BLP8G10S-45PY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 952.5MHz~957.5MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/nxpusainc-blp8g10s45pgj-datasheets-7516.pdf | SOT-1223-1 | 4 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | FLAT | NOT SPECIFIED | BLP8G10 | NOT SPECIFIED | 2 | 20.8dB | R-PDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 2.5W | 224mA | LDMOS (Dual), Common Source | 28V | |||||||||||||||||||||||||||||||||
| PTFB212503EL-V1-R250 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.17GHz | H-33288-6 | 18.1dB | 55W | 1.85A | LDMOS | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLM8G0710S-15PBGY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 957.5MHz | Non-RoHS Compliant | 2011 | /files/ampleonusainc-blm8g0710s15pbgy-datasheets-7882.pdf | SOT-1212-3 | 13 Weeks | 36.1dB | 16-HSOP | 1.5W | 15mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS9G2934LS-400U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.9GHz~3.4GHz | /files/ampleonusainc-bls9g2934l400u-datasheets-7682.pdf | SOT-502B | 13 Weeks | 12dB | 400W | 4μA | 400mA | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA9H0912L-700GU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 106V | 960MHz~1.215GHz | /files/ampleonusainc-bla9h0912ls700u-datasheets-7710.pdf | SOT-502F | 13 Weeks | 20dB | 700W | 2.8μA | 100mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA8H0910L-500U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 114.5V | 900MHz~930MHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-bla8h0910ls500u-datasheets-7704.pdf | SOT-502A | 13 Weeks | 19dB | 500W | 2.8μA | 90mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BLL9G1214LS-600U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 65V | 1.2GHz~1.4GHz | ROHS3 Compliant | /files/ampleonusainc-bll9g1214l600u-datasheets-7713.pdf | SOT-502B | 13 Weeks | 19dB | 600W | 5μA | 400mA | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G24LS-150GVQ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf8g24ls150vu-datasheets-7640.pdf | SOT-1244C | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 19dB | R-CDSO-G6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 1.3A | LDMOS | 28V | ||||||||||||||||||||||||||||||||
| BLC10G20LS-240PWTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.805GHz~1.995GHz | ROHS3 Compliant | /files/ampleonusainc-blc10g20ls240pwtz-datasheets-7742.pdf | SOT1275-3 | 13 Weeks | 19.3dB | 60W | 1.4μA | 1.6A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3756(TE12L,F) | Toshiba Semiconductor and Storage | $5.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 470MHz | ENHANCEMENT MODE | RoHS Compliant | 2009 | 1A | TO-243AA | 4 Weeks | EAR99 | unknown | YES | 3W | 150°C | FET General Purpose Powers | 12dB | 1A | 3V | Single | 7.5V | METAL-OXIDE SEMICONDUCTOR | 32dBm | 200mA | 1A | N-Channel | 4.5V |
