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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| IDW16G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw16g65c5xksa1-datasheets-7913.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | 94W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 16A | 95A | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 200μA | 650V | 95A | 0ns | Silicon Carbide Schottky | 1 | 470pF @ 1V 1MHz | 200μA @ 650V | 1.7V @ 16A | 16A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI30-06A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei3006a-datasheets-7846.pdf&product=ixys-dsei3006a-5980011 | 600V | 37A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 125W | 1 | Rectifier Diodes | 37A | 37A | 1.6V | 320A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 100μA | 600V | 320A | 600V | 50 ns | 50 ns | Standard | 600V | 37A | 1 | 100μA @ 600V | 1.6V @ 37A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| STTH60L06W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth60l06w-datasheets-7849.pdf | 600V | 60A | DO-247-2 (Straight Leads) | 15.75mm | 20.15mm | 5.15mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | SINGLE | STTH60 | 2 | Common Cathode | 1 | Rectifier Diodes | 60A | 60A | 1.55V | 400A | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 50μA | 600V | 400A | 600V | 105 ns | 105 ns | Standard | 600V | 60A | 1 | 50μA @ 600V | 1.55V @ 60A | 175°C Max | |||||||||||||||||||||||||||||||||||||
| 1N5420 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N5416 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Yes | Single | 1.5V | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 100V | 80A | 150 ns | Standard | 100V | 3A | 100V | 1μA @ 100V | 1.5V @ 9A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C4D05120A | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2011 | TO-220-2 | 390pF | 10.41mm | 19.431mm | 4.699mm | 6 Weeks | Unknown | 2 | No | 81W | Single | 175°C | TO-220-2 | 5A | 1.8V | 46A | 150μA | No Recovery Time > 500mA (Io) | 400A | 150μA | 1.2kV | 46A | 1.2kV | 0 s | Silicon Carbide Schottky | 1.2kV | 8.2A | 390pF @ 0V 1MHz | 1200V | 150μA @ 1200V | 1.8V @ 5A | 19A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| SCS212AGC | ROHM Semiconductor | $3.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2001 | TO-220-2 | 9.8mm | 15.37mm | 4.45mm | Lead Free | 2 | 12 Weeks | No SVHC | 2 | EAR99 | 8541.10.00.80 | AEC-Q101 | 93W | NOT SPECIFIED | SCS212 | Single | NOT SPECIFIED | 93W | 1 | Rectifier Diodes | 12A | 1.55V | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 45A | 240μA | 650V | 170A | 0ns | Silicon Carbide Schottky | 650V | 12A | 1 | 438pF @ 1V 1MHz | 240μA @ 600V | 1.55V @ 12A | 12A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||
| ISL9R3060P2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stealth™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2004 | /files/onsemiconductor-isl9r3060p2-datasheets-7884.pdf | 600V | 30A | TO-220-2 | 120pF | 10.67mm | 16.51mm | 4.83mm | Lead Free | 2 | 4 Weeks | 2.16g | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FREEWHEELING DIODE, SNUBBER DIODE | No | e3 | Tin (Sn) | Single | 200W | 1 | Rectifier Diodes | 30A | 30A | 2.4V | 325A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 325A | 100μA | 600V | 325A | 600V | 45 ns | 45 ns | Standard | 600V | 30A | 1 | 100μA @ 600V | 2.4V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||
| 1N5615US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.6V | ISOLATED | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 200V | 1A | 1A | 45pF @ 12V 1MHz | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| RURG8060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | ROHS3 Compliant | 2002 | /files/onsemiconductor-rurg8060-datasheets-7814.pdf | 600V | 80A | TO-247-2 | 15.8mm | 20.8mm | 4.82mm | Lead Free | 2 | 4 Weeks | 6.33g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Single | 180W | 1 | Rectifier Diodes | 80A | 80A | 1.6V | 800A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800A | 250μA | 600V | 800A | 600V | 85 ns | 85 ns | Standard | 600V | 80A | 1 | 250μA @ 600V | 1.6V @ 80A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| 1N5614 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | Yes | Single | 1.3V | Standard Recovery >500ns, > 200mA (Io) | 500nA | 200V | 30A | 2 μs | Standard | 200V | 1A | 200V | 500nA @ 200V | 1.3V @ 3A | 1A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D10060A | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2011 | TO-220-2 | 460.5pF | 10.41mm | 19.431mm | 4.699mm | 6 Weeks | Unknown | 2 | No | 136.3W | Single | 175°C | TO-220-2 | 10A | 1.8V | 250A | 50μA | No Recovery Time > 500mA (Io) | 90A | 10μA | 600V | 250A | 0 s | Silicon Carbide Schottky | 600V | 10A | 480pF @ 0V 1MHz | 600V | 50μA @ 600V | 1.8V @ 10A | 30A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI30-10A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei3010a-datasheets-7830.pdf&product=ixys-dsei3010a-5980006 | 1kV | 30A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE | No | 8541.10.00.80 | IEC-60747 | 3 | Single | 138W | 1 | Rectifier Diodes | 30A | 30A | 2.4V | 210A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 750μA | 1kV | 210A | 1kV | 50 ns | 50 ns | Standard | 1kV | 30A | 1 | 1000V | 750μA @ 1000V | 2.4V @ 36A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| STPSC15H12D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stpsc15h12d-datasheets-7833.pdf | TO-220-2 | 2 | 14 Weeks | ACTIVE (Last Updated: 6 months ago) | NO | SINGLE | NOT SPECIFIED | STPSC15 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 15A | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 1200V | 90μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 1200pF @ 0V 1MHz | 1200V | 90μA @ 1200V | 1.5V @ 15A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C4D05120E | Cree/Wolfspeed | $6.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Surface Mount | Tube | 175°C | -55°C | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7.34mm | 2.388mm | 6.248mm | 6 Weeks | Unknown | 2 | No | 81W | Single | 8.2A | 1.8V | 42A | 150μA | No Recovery Time > 500mA (Io) | 46A | 300μA | 1.2kV | 42A | 0ns | Silicon Carbide Schottky | 1.2kV | 8.2A | 390pF @ 0V 1MHz | 1200V | 150μA @ 1200V | 1.8V @ 5A | 19A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH6012W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth6012w-datasheets-7840.pdf | 1.2kV | 60A | DO-247-2 (Straight Leads) | 15.75mm | 20.15mm | 5.15mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) | STTH6012 | 2 | Single | 1 | Rectifier Diodes | 60A | 60A | 2.25V | 400A | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400A | 30μA | 1.2kV | 400A | 1.2kV | 125 ns | 125 ns | Standard | 1.2kV | 60A | 1 | 1200V | 30μA @ 1200V | 2.25V @ 60A | 175°C Max | |||||||||||||||||||||||||||||||||||||
| 1N3611 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | Contains Lead | 7 Weeks | 2 | Yes | 1N3611 | Single | 1.1V | Standard Recovery >500ns, > 200mA (Io) | 1μA | 200V | 30A | Standard | 200V | 1A | 200V | 1μA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D60BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 30A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | Tin | No | 8541.10.00.80 | e1 | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 30A | 1.6V | 320A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 320A | 85 ns | 23 ns | Standard | 600V | 30A | 1 | 600V | 250μA @ 600V | 1.8V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| SCS208AMC | ROHM Semiconductor | $22.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2001 | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | No SVHC | 2 | EAR99 | 8541.10.00.80 | 34W | NOT SPECIFIED | SCS208 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 8A | 1.55V | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 118A | 160μA | 650V | 0ns | Silicon Carbide Schottky | 650V | 8A | 1 | 8A | 291pF @ 1V 1MHz | 160μA @ 600V | 1.55V @ 8A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| RHRG75120 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | ROHS3 Compliant | 2008 | 1.2kV | 75A | TO-247-2 | 15.8mm | 24.75mm | 4.82mm | Lead Free | 2 | 9 Weeks | 6.33g | No SVHC | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Single | 190W | 1 | Rectifier Diodes | 175°C | 75A | 75A | 3.2V | 500A | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500A | 250μA | 1.2kV | 500A | 1.2kV | 100 ns | 100 ns | Standard | 1.2kV | 75A | 1 | 1200V | 250μA @ 1200V | 3.2V @ 75A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| SBR1U40LP-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/diodesincorporated-sbr1u40lp7-datasheets-6270.pdf | 3-XDFN | 1.4mm | 480μm | 1.1mm | Lead Free | 2 | 11 Weeks | 3 | yes | EAR99 | No | 8541.10.00.80 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | SINGLE | SBR1U40 | 3 | Common Anode | 1 | R-PSSO-N2 | 1A | 490mV | CATHODE | SUPER FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.4W | 5A | 50μA | 40V | 5 ns | Super Barrier | 40V | 1A | 1 | 1A | 50μA @ 40V | 490mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-60APH03-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs60aph03n3-datasheets-7805.pdf | TO-247-3 | 14 Weeks | 5.500006g | Single | TO-247AC | 60A | 850mV | 450A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 42 ns | 28 ns | Standard | 300V | 60A | 300V | 300V | 10μA @ 300V | 1.45V @ 60A | 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH10G65C6XKSA1 | Infineon Technologies | $16.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-idh10g65c6xksa1-datasheets-7808.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 72W | 650V | 33μA | TO-220AC | 0ns | Silicon Carbide Schottky | 44A | 1 | 495pF @ 1V 1MHz | 650V | 33μA @ 420V | 1.35V @ 10A | 24A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DSI45-12A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | AVALANCHE | ROHS3 Compliant | 2004 | /files/ixys-dsi4512a-datasheets-7812.pdf | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 24 Weeks | No SVHC | 3 | yes | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 48A | 1.6V | 475A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 475A | 20μA | 1.2kV | 518A | 1.2kV | Standard | 1.2kV | 45A | 1 | 18pF @ 400V 1MHz | 1200V | 20μA @ 1200V | 1.28V @ 45A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||
| STPSC1206D | STMicroelectronics | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | TO-220-2 | 2 | 14 Weeks | No SVHC | 2 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | STPSC1206 | 3 | Single | 1 | Rectifier Diodes | 12A | 1.7V | 50A | 150μA | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 200A | 150μA | 600V | 50A | 0ns | 0 s | Silicon Carbide Schottky | 600V | 12A | 1 | 750pF @ 0V 1MHz | 150μA @ 600V | 1.7V @ 12A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| IDW100E60FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/infineontechnologies-idw100e60fksa1-datasheets-7736.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 150A | 2V | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40μA | 600V | 400A | 120 ns | Standard | 1 | 100A | 40μA @ 600V | 2V @ 100A | 150A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT40DQ100BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40dq100bg-datasheets-7741.pdf | 1kV | 40A | TO-247-2 | Lead Free | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | R-PSFM-T2 | 40A | 40A | 3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 210A | 250 ns | Standard | 1kV | 40A | 1 | 1000V | 100μA @ 1000V | 3V @ 40A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| APT60D120BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 1.2kV | 60A | TO-247-2 | 60pF | 21.46mm | 25.96mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | 175°C | R-PSFM-T2 | 60A | 60A | 2.5V | 540A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 540A | 250μA | 1.2kV | 540A | 1.2kV | 400 ns | 400 ns | Standard | 1.2kV | 60A | 1 | 1.2kV | 1200V | 250μA @ 1200V | 2.5V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| C3D06060A | Cree/Wolfspeed | $3.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2009 | TO-220-2 | 10.41mm | 15.621mm | 4.699mm | 6 Weeks | Unknown | 2 | No | 79W | Single | 6A | 1.8V | No Recovery Time > 500mA (Io) | 200A | 50μA | 600V | 70A | 0ns | Silicon Carbide Schottky | 600V | 6A | 294pF @ 0V 1MHz | 50μA @ 600V | 1.8V @ 6A | 19A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5616 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C |
