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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Flammability Rating | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| S4PK-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-s4pjm386a-datasheets-0490.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | S4PK | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 4A | 860mV | 100A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 10μA | 800V | 100A | 800V | TO-277A | 2.5 μs | 2.5 μs | Standard | 800V | 4A | 1 | 4A | 30pF @ 4V 1MHz | 10μA @ 800V | 1.1V @ 4A | -55°C~150°C | ||||||||||||||||||||||||||||||
| RGF1A-E3/67A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-rgf1ge367a-datasheets-0605.pdf | DO-214BA | 2 | 16 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | RGF1A | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1.3V | 30A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 150 ns | 150 ns | Standard | 50V | 1A | 1A | 8.5pF @ 4V 1MHz | 5μA @ 50V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| UG2D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-ug2de373-datasheets-4253.pdf | DO-204AC, DO-15, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | UG2D | 2 | Single | 1 | Rectifier Diodes | 2A | 950mV | 80A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 80A | 200V | 25 ns | 15 ns | Standard | 200V | 2A | 1 | 2A | 5μA @ 200V | 950mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| BYG22A-E3/TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byg22de3tr-datasheets-0872.pdf | DO-214AC, SMA | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | BYG22A | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 1.1V | 35A | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 35A | 50V | 25 ns | 25 ns | Avalanche | 50V | 2A | 1 | 2A | 1μA @ 50V | 1.1V @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| GI501-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-gi504e354-datasheets-3559.pdf | 5.3mm | DO-201AD, Axial | 9.4996mm | Lead Free | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI501 | 2 | Single | 1 | Rectifier Diodes | 3A | 1.1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 100A | 100V | 2 μs | 2 μs | Standard | 100V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 5μA @ 100V | 1.1V @ 9.4A | -50°C~150°C | ||||||||||||||||||||||||||||||||
| TSD2GH | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AA, SMB | 2 | 6 Weeks | EAR99 | HIGH SURGE CURRENT CAPABILITY | e3 | Matte Tin (Sn) | AEC-Q101; IEC-61000-4-2 | YES | DUAL | C BEND | 175°C | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 1μA | 1V | Standard | 50A | 1 | 2A | 20pF @ 4V 1MHz | 400V | 1μA @ 400V | 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| GP02-25-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp0240e354-datasheets-3946.pdf | DO-204AL, DO-41, Axial | 22 Weeks | 2 | No | GP02-25 | Single | DO-204AL (DO-41) | 3V | 15A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 2.5kV | 15A | 2.5kV | 2 μs | 2 μs | Standard | 2.5kV | 250mA | 2500V | 5μA @ 2500V | 3V @ 1A | 250mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4002B-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-1n4004g-datasheets-2596.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | yes | WIRE | 1N4002 | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 100V | 1A | 1A | 15pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RMPG06G-E3/53 | Vishay Semiconductor Diodes Division | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rmpg06jhe3a54-datasheets-1547.pdf | MPG06, Axial | 10 Weeks | 2 | No | Single | MPG06 | 1A | 40A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 40A | 400V | 150 ns | 150 ns | Standard | 400V | 1A | 6.6pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| RB160MM-90TFTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | SOD-123F | 2 | 20 Weeks | HIGH RELIABILITY | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | 1A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | Schottky | 1A | 90V | 100μA @ 90V | 730mV @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| P300D-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-p300ke354-datasheets-4081.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1.2V | 200A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 200A | 200V | 2 μs | 2 μs | Standard | 200V | 3A | 1 | 3A | 5μA @ 200V | 1.2V @ 3A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SBYV27-200-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-sbyv27200e373-datasheets-5218.pdf | DO-204AC, DO-15, Axial | Lead Free | 2 | 12 Weeks | Unknown | 2 | yes | UL94 V-0 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SBYV27-200 | 2 | Single | 1 | Rectifier Diodes | 2A | 1.07V | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 5μA | 200V | 50A | 200V | 15 ns | 15 ns | Standard | 200V | 2A | 1 | 2A | 15pF @ 4V 1MHz | 5μA @ 200V | 1.07V @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||
| RS3JB-T R5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-rs3jbtr5g-datasheets-4176.pdf | DO-214AA, SMB | 5 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | Standard | 50pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 3A | 3A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ESH2D-E3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-esh2de35bt-datasheets-4165.pdf | DO-214AA, SMB | 4.57mm | 2.24mm | 3.94mm | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | No | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | ESH2D | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 930mV | 60A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 60A | 200V | 25 ns | 25 ns | Standard | 200V | 2A | 1 | 2A | 2μA @ 200V | 930mV @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||
| RS3GB-T R5G | Taiwan Semiconductor Corporation | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-rs3jbtr5g-datasheets-4176.pdf | DO-214AA, SMB | 5 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | Standard | 50pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 3A | 3A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BY252P-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-by254pe354-datasheets-4134.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | WIRE | 2 | Single | 1 | Rectifier Diodes | 3A | 1.1V | 150A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 150A | 400V | 3 μs | 3 μs | Standard | 400V | 3A | 1 | 3A | 40pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| P300J-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-p300ke354-datasheets-4081.pdf | DO-201AD, Axial | 30pF | Contains Lead | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 3A | 1.2V | 200A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 200A | 600V | 2 μs | 2 μs | Standard | 600V | 3A | 1 | 30pF @ 4V 1MHz | 5μA @ 600V | 1.2V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||||||||||
| ES1PC-M3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-es1pdm384a-datasheets-0476.pdf | DO-220AA | 2 | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | ES1PC | 2 | Single | 1 | Rectifier Diodes | 1A | 920mV | 30A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 5μA | 150V | 30A | 150V | 25 ns | 15 ns | Standard | 150V | 1A | 1A | 10pF @ 4V 1MHz | 5μA @ 150V | 920mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| SURA8220T3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-sura8220t3g-datasheets-4188.pdf | DO-214AC, SMA | Lead Free | 2 | 15 Weeks | 2 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | DUAL | J BEND | MURA220 | 2 | Single | 1 | 2A | 950mV | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40A | 2μA | 150V | 40A | 35 ns | Standard | 200V | 2A | 1 | 2A | 2μA @ 200V | 950mV @ 2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| 1N5402-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-1n5407e354-datasheets-0147.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 1N5402 | 2 | Single | 1 | Rectifier Diodes | 3A | 1.2V | 200A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 200A | 200V | Standard | 200V | 3A | 1 | 3A | 30pF @ 4V 1MHz | 5μA @ 200V | 1.2V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||
| SB320-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-sb340e354-datasheets-1604.pdf | 5.3mm | DO-201AD, Axial | 9.5mm | Lead Free | 2 | 8 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB320 | 2 | Single | 1 | Rectifier Diodes | 3A | 490mV | 120A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120A | 20mA | 20V | 120A | Schottky | 20V | 3A | 1 | 3A | 500μA @ 20V | 490mV @ 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| PMEG60T20ELPX | Nexperia USA Inc. | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmeg60t20elpx-datasheets-3733.pdf | SOD-128 | 13 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 14ns | Schottky | 400pF @ 1V 1MHz | 60V | 1.2μA @ 60V | 620mV @ 2A | 2A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GI506-E3/54 | Vishay Semiconductor Diodes Division | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-gi504e354-datasheets-3559.pdf | 5.3mm | DO-201AD, Axial | 9.4996mm | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1.1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 100A | 600V | 2 μs | 2 μs | Standard | 600V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 5μA @ 600V | 1.1V @ 9.4A | -50°C~150°C | ||||||||||||||||||||||||||||||||||
| BY251P-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-by254pe354-datasheets-4134.pdf | DO-201AD, Axial | Lead Free | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | WIRE | BY251 | 2 | Single | 1 | Rectifier Diodes | 1.1V | 150A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 150A | 200V | 3 μs | 3 μs | Standard | 200V | 3A | 1 | 3A | 40pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| GL41BHE3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gl41ae397-datasheets-5861.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | GL41B | 2 | Single | 1 | Rectifier Diodes | 1A | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 30A | 100V | Standard | 100V | 1A | 1A | 8pF @ 4V 1MHz | 10μA @ 100V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| P300M-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-p300ke354-datasheets-4081.pdf | DO-201AD, Axial | 2 | 18 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 200A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 200A | 1kV | 2 μs | 2 μs | Standard | 1kV | 3A | 1 | 3A | 30pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.2V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||
| CDBA360LR-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdba360lrhf-datasheets-3927.pdf | DO-214AC, SMA | 2 | 12 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | DUAL | C BEND | 260 | CDBA360 | 150°C | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 60V | 3A | 125A | 1 | 3A | 250pF @ 4V 1MHz | 500μA @ 60V | 550mV @ 3A | 3A DC | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| RGL34A-E3/98 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-rgl34je398-datasheets-1957.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 1.3V | 10A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 10A | 150 ns | 150 ns | Standard | 50V | 500mA | 0.5A | 4pF @ 4V 1MHz | 5μA @ 50V | 1.3V @ 500mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| RB450UMTL | ROHM Semiconductor | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rb450umtl-datasheets-4036.pdf | SC-85 | 3 | 12 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.70 | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 45V | Schottky | 0.1A | 6pF @ 10V 1MHz | 40V | 10μA @ 40V | 550mV @ 100mA | 100mA | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVUS220VT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-nrvus220vt3g-datasheets-4026.pdf | DO-214AA, SMB | 2 | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | YES | DUAL | J BEND | 175°C | 1 | R-PDSO-J2 | SINGLE | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 2μA | 35ns | Standard | 40A | 1 | 2A | 200V | 2μA @ 200V | 950mV @ 2A | 2A | -65°C~175°C |
