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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SSM3J355R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | 6A | 0.0388Ohm | P-Channel | 1030pF @ 10V | 30.1m Ω @ 4A, 4.5V | 1V @ 1mA | 6A Ta | 16.6nC @ 4.5V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN66D0LW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn66d0lw7-datasheets-1988.pdf | SC-70, SOT-323 | 2.15mm | 1mm | 1.3mm | 3 | 5 Weeks | 6.010099mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Powers | 10 ns | 33 ns | 115mA | 20V | SILICON | SWITCHING | 60V | 60V | 200mW Ta | 6Ohm | N-Channel | 23pF @ 25V | 6 Ω @ 115mA, 5V | 2V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SSM3J46CTB(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, No Lead | 12 Weeks | 3 | No | 1W | 1W | 1 | Other Transistors | 2A | 8V | Single | 20V | 2A | P-Channel | 290pF @ 10V | 103m Ω @ 1.5A, 4.5V | 1V @ 1mA | 2A Ta | 4.7nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS015N04CTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvtfs015n04ctag-datasheets-2074.pdf | 8-PowerWDFN | 18 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.9W Ta 23W Tc | N-Channel | 325pF @ 25V | 17.3m Ω @ 7.5A, 10V | 3.5V @ 20μA | 9.4A Ta 27A Tc | 6.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3134KL-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/microcommercialco-si3134kltp-datasheets-2076.pdf | SC-101, SOT-883 | 8 Weeks | yes | 260 | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RV3C002UNT2CL | ROHM Semiconductor | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 3-XFDFN | 3 | 16 Weeks | 3 | EAR99 | not_compliant | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 150mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 100mW Ta | 0.15A | N-Channel | 12pF @ 10V | 2 Ω @ 150mA, 4.5V | 1V @ 100μA | 150mA Ta | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3333A-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-mch3333atlw-datasheets-2004.pdf | 3-SMD, Flat Lead | Lead Free | 4 Weeks | No SVHC | 70 | ACTIVE (Last Updated: 8 hours ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | 5.7 ns | 9.7ns | 16 ns | 27 ns | 2A | 10V | 30V | -1.3V | 900mW Ta | P-Channel | 240pF @ 10V | 215m Ω @ 1A, 4V | 1.3V @ 1mA | 2A Ta | 2.8nC @ 4V | 1.8V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN62D1LFB-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn62d1lfb7b-datasheets-1403.pdf | 3-UFDFN | 23 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 60V | 500mW Ta | N-Channel | 64pF @ 25V | 2 Ω @ 100mA, 4V | 1V @ 250μA | 320mA Ta | 0.9nC @ 4.5V | 1.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV130ENEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmv130enear-datasheets-1636.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 95mOhm | LOGIC LEVEL COMPATIBLE | AEC-Q101; IEC-60134 | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | 2.1A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 460mW Ta 5W Tc | TO-236AB | N-Channel | 170pF @ 20V | 120m Ω @ 1.5A, 10V | 2.5V @ 250μA | 2.1A Ta | 3.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMXB350UPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmxb350upez-datasheets-2080.pdf | 3-XDFN Exposed Pad | 4 Weeks | 3 | No | 3 | 3 ns | 9ns | 6 ns | 18 ns | 1.2A | 8V | -20V | 20V | 360mW Ta 5.68W Tc | P-Channel | 116pF @ 10V | 447m Ω @ 1.2A, 4.5V | 950mV @ 250μA | 1.2A Ta | 2.3nC @ 4.5V | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA462DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia462djt1ge3-datasheets-2125.pdf | PowerPAK® SC-70-6 | 14 Weeks | 6 | No | Single | 3.5W | 1 | PowerPAK® SC-70-6 Single | 570pF | 10ns | 10 ns | 15 ns | 12A | 20V | 30V | 3.5W Ta 19W Tc | 18mOhm | 30V | N-Channel | 570pF @ 15V | 18mOhm @ 9A, 10V | 2.4V @ 250μA | 12A Tc | 17nC @ 10V | 18 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP32D4SFB-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmp32d4sfb7b-datasheets-1901.pdf | 3-UFDFN | 1.08mm | 480μm | 675μm | 16 Weeks | No SVHC | 3 | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 260 | 1 | Single | 30 | Other Transistors | 3.6 ns | 8.5ns | 20.2 ns | 31.3 ns | 500mA | 20V | 30V | 500mW Ta | 0.5A | -30V | P-Channel | 51pF @ 15V | 2.4 Ω @ 200mA, 10V | 2.3V @ 250μA | 400mA Ta | 1.3nC @ 10V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7123DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7123dnt1ge3-datasheets-1880.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 12 Weeks | Unknown | 10.6mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 25 ns | 88ns | 88 ns | 82 ns | -25A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1V | 1.5W Ta | 40A | -20V | P-Channel | 3729pF @ 10V | 10.6m Ω @ 15A, 4.5V | 1V @ 250μA | 10.2A Ta | 90nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| RQ5E015RPTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 700mW Ta | P-Channel | 230pF @ 10V | 160m Ω @ 1.5A, 10V | 2.5V @ 1mA | 1.5A Ta | 3.2nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8802DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8802dbt2e1-datasheets-1785.pdf | 4-XFBGA | Lead Free | 4 | 30 Weeks | Unknown | 54mOhm | 4 | EAR99 | Tin | No | e3 | BOTTOM | BALL | 4 | 1 | Single | 500mW | 1 | FET General Purpose Power | 5 ns | 15ns | 7 ns | 22 ns | 3.5A | 5V | SILICON | SWITCHING | 500mW Ta | 8V | N-Channel | 350 mV | 54m Ω @ 1A, 4.5V | 700mV @ 250μA | 6.5nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||
| NVTR0202PLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-ntr0202plt1g-datasheets-4482.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 2 Weeks | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | Single | 225mW | 1 | Other Transistors | 3 ns | 6ns | 4 ns | 18 ns | 400mA | 20V | SILICON | SWITCHING | 225mW Ta | 0.4A | 0.8Ohm | -20V | P-Channel | 70pF @ 5V | 800m Ω @ 200mA, 10V | 2.3V @ 250μA | 400mA Ta | 2.18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NVR5198NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvr5198nlt1g-datasheets-5117.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 7 Weeks | 1.437803g | 3 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3 | 1 | Single | FET General Purpose Powers | 5 ns | 7ns | 2 ns | 13 ns | 2.2A | 20V | 900mW Ta | 60V | N-Channel | 182pF @ 25V | 155m Ω @ 1A, 10V | 2.5V @ 250μA | 1.7A Ta | 5.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17327Q5A | Texas Instruments | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD17327 | 8 | Single | NOT SPECIFIED | 3W | 1 | FET General Purpose Power | 65A | 10V | SILICON | DRAIN | SWITCHING | 3W Ta | 33 pF | 45 mJ | 30V | N-Channel | 506pF @ 15V | 12.2m Ω @ 11A, 8V | 2V @ 250μA | 65A Tc | 3.4nC @ 4.5V | 4.5V 8V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| DMG3415UFY4Q-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmg3415ufy4q7-datasheets-1604.pdf | 3-XDFN | 3 | 15 Weeks | 3 | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 16V | 16V | 650mW Ta | 0.0025A | P-Channel | 282pF @ 10V | 39m Ω @ 4A, 4.5V | 1V @ 250μA | 2.5A Ta | 10nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB390UNEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmzb390uneyl-datasheets-1756.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | Tin | BOTTOM | NO LEAD | 3 | 1 | 4 ns | 8ns | 3 ns | 12 ns | 900mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 350mW Ta 5.43W Tc | 0.9A | 0.47Ohm | N-Channel | 41pF @ 15V | 470m Ω @ 900mA, 4.5V | 950mV @ 250μA | 900mA Ta | 1.3nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R7-40MLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-1210, 8-LFPAK33 (5-Lead) | 26 Weeks | 40V | 65W Ta | N-Channel | 2071pF @ 20V | 6.7m Ω @ 20A, 10V | 2.15V @ 1mA | 50A Ta | 31nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM126CX RFG | Taiwan Semiconductor Corporation | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm126cxrfg-datasheets-1802.pdf | TO-236-3, SC-59, SOT-23-3 | 28 Weeks | SOT-23 | 600V | 500mW Ta | N-Channel | 51.42pF @ 25V | 800Ohm @ 16mA, 10V | 1V @ 8μA | 30mA Tc | 1.18nC @ 4.5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RYM002N05T2CL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-rym002n05t2cl-datasheets-1885.pdf | SOT-723 | Lead Free | 3 | 16 Weeks | EAR99 | e2 | Tin/Copper (Sn/Cu) | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-F3 | 5 ns | 8ns | 43 ns | 17 ns | 200mA | 8V | SILICON | SWITCHING | 150mW Ta | 0.2A | 2.8Ohm | 50V | N-Channel | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | 200mA Ta | 0.9V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| CEDM8004VL TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cedm8004vltrpbfree-datasheets-1912.pdf | SC-101, SOT-883 | 6 Weeks | 30V | 100mW Ta | P-Channel | 55pF @ 25V | 1.1 Ω @ 430mA, 4.5V | 1V @ 250μA | 450mA Ta | 0.88nC @ 4.5V | 1.8V 4.5V | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2300UFB4-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn2300ufb47b-datasheets-1875.pdf | 3-XFDFN | 1.05mm | 400μm | 650μm | Lead Free | 3 | 16 Weeks | No SVHC | 175mOhm | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 3 | 1 | Single | 40 | 500mW | 1 | FET General Purpose Powers | 150°C | 3.5 ns | 2.8ns | 13 ns | 38 ns | 1.3A | 8V | SILICON | DRAIN | SWITCHING | 950mV | 500mW Ta | 20V | N-Channel | 64.3pF @ 25V | 175m Ω @ 300mA, 4.5V | 950mV @ 250μA | 1.3A Ta | 1.6nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| NVTA7002NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-nta7002nt1g-datasheets-5866.pdf | SC-75, SOT-416 | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 12 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | GULL WING | 3 | Single | 300mW | 1 | FET General Purpose Power | 13 ns | 15ns | 60 ns | 98 ns | 154mA | 10V | SILICON | SWITCHING | 300mW Tj | 0.154A | 7.5Ohm | 6 pF | 30V | N-Channel | 20pF @ 5V | 7 Ω @ 154mA, 4.5V | 1.5V @ 100μA | 154mA Tj | 2.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| DMN3067LW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3067lw7-datasheets-9025.pdf | SC-70, SOT-323 | 15 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | 260 | 1 | Single | 30 | 3.8 ns | 5.2ns | 6.1 ns | 15 ns | 2.6A | 12V | 30V | 500mW Ta | N-Channel | 447pF @ 10V | 67m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2.6A Ta | 4.6nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH105,235 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/nexperiausainc-bsh105215-datasheets-6081.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 8541.21.00.95 | e3 | YES | DUAL | GULL WING | 3 | Single | 417mW | 1 | 2 ns | 4.5ns | 4.5 ns | 45 ns | 1.05A | 8V | 20V | SILICON | SWITCHING | 417mW Ta | 0.25Ohm | 20V | N-Channel | 152pF @ 16V | 200m Ω @ 600mA, 4.5V | 570mV @ 1mA | 1.05A Ta | 3.9nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM6K211FE,LF | Toshiba Semiconductor and Storage | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | ES6 | 510pF | 3.2A | 20V | 500mW Ta | N-Channel | 510pF @ 10V | 47mOhm @ 2A, 4.5V | 1V @ 1mA | 3.2A Ta | 10.8nC @ 4.5V | 47 mΩ | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E130BNTB | ROHM Semiconductor | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-PowerVDFN | Lead Free | 5 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 52A | 0.0094Ohm | N-Channel | 1900pF @ 15V | 6m Ω @ 13A, 10V | 2.5V @ 1mA | 13A Ta | 36nC @ 10V | 4.5V 10V | ±20V |
