| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Number of Terminations | Factory Lead Time | Number of Pins | Number of Ports | ECCN Code | Additional Feature | Max Frequency | HTS Code | Number of Functions | Surface Mount | Terminal Position | Terminal Form | Supply Voltage | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | JESD-30 Code | Memory Size | Memory Type | Data Bus Width | Speed | Organization | Memory Width | Memory Density | Access Mode |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| A4C16QE8BNPBSE | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 288-UDIMM | 6 Weeks | 16GB | DDR4 SDRAM | 2400MT/s | |||||||||||||||||||||||||||||||||||||||
| MT16HTF25664HZ-800M1 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 70°C | 0°C | CMOS | SYNCHRONOUS | 30.15mm | ROHS3 Compliant | 2014 | /files/microntechnologyinc-mt16htf51264hz800c1-datasheets-0204.pdf | 200-SODIMM | 67.6mm | 1.8V | 200 | 10 Weeks | 200 | 1 | EAR99 | AUTO/SELF REFRESH; WD-MAX | 400MHz | 8542.32.00.36 | 1 | NO | ZIG-ZAG | NO LEAD | 1.8V | COMMERCIAL | 1.9V | 1.7V | 2GB | DDR2 SDRAM | 64b | 800MT/s | 256MX64 | 64 | 17179869184 bit | DUAL BANK PAGE BURST | ||||||||
| AY24P7278MNF8M | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 204-MiniUDIMM | 6 Weeks | 8GB | |||||||||||||||||||||||||||||||||||||||||
| 75.B83CG.G040B | Apacer Memory America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 204-SODIMM | 2 Weeks | 4GB | DDR3 SDRAM | 1.333Gb/s | |||||||||||||||||||||||||||||||||||||
| A4B16QE8BNPBSE | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Module | 6 Weeks | 16GB | DDR4 SDRAM | 2133MT/s | |||||||||||||||||||||||||||||||||||||||
| MTA36ASF4G72PZ-3G2E7 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | /files/microntechnologyinc-mta36asf4g72pz2g9e6-datasheets-0468.pdf | |||||||||||||||||||||||||||||||||||||||||||
| AW24P7228BLK0MW | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 240-UDIMM | 6 Weeks | 8GB | DDR3 SDRAM | 1600MT/s | |||||||||||||||||||||||||||||||||||||||
| MTA18ADF4G72AZ-3G2B3 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | /files/microntechnologyinc-mta18adf4g72az3g2b3-datasheets-0483.pdf | |||||||||||||||||||||||||||||||||||||||||||
| AW48M64F8BNH9M | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 240-UDIMM | 6 Weeks | 16GB | DDR3 SDRAM | 1600MT/s | |||||||||||||||||||||||||||||||||||||||
| A4D08Q18BNPBSE | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Module | 6 Weeks | 8GB | DDR4 SDRAM | 2133MT/s | |||||||||||||||||||||||||||||||||||||||
| SFUI016GJ1AE1TO-I-QC-2A1-STD | Swissbit |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-500 | Not Applicable | ROHS3 Compliant | Module | 4 Weeks | 16GB | FLASH - NAND (SLC) | |||||||||||||||||||||||||||||||||||||
| MTEDFBR016SCA-1P2IT | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eU500 | ROHS3 Compliant | Module | 3 Weeks | 16GB | FLASH - NAND (SLC) | ||||||||||||||||||||||||||||||||||||||
| AY24M7298MNF8M | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 204-MiniRDIMM | 6 Weeks | 8GB | |||||||||||||||||||||||||||||||||||||||||
| MTA18ASF4G72HZ-2G6B1 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | /files/microntechnologyinc-mta18asf4g72hz3g2b1-datasheets-0475.pdf | |||||||||||||||||||||||||||||||||||||||||||
| SFUI8192J3BP2TO-C-QT-221-STD | Swissbit |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-110 | 1 (Unlimited) | ROHS3 Compliant | 2015 | Module | 14 Weeks | 8GB | FLASH - NAND (SLC) | ||||||||||||||||||||||||||||||||||||
| MTA9ASF1G72PKIZ-3G2E1 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | CMOS | SYNCHRONOUS | 30.15mm | ROHS3 Compliant | 288-MiniRDIMM | 80mm | 4mm | 288 | 3 Weeks | 1 | EAR99 | AUTO/SELF REFRESH; WD-MAX | 1 | NO | DUAL | NO LEAD | 1.2V | INDUSTRIAL | 85°C | -40°C | 1.26V | 1.14V | R-XDMA-N288 | 8GB | DDR4 SDRAM | 3.2GT/s | 1GX72 | 72 | 77309411328 bit | SINGLE BANK PAGE BURST | |||||||||||||
| MTA18ASF4G72PZ-2G9B1 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | /files/microntechnologyinc-mta18asf4g72pz3g2b1-datasheets-0467.pdf | |||||||||||||||||||||||||||||||||||||||||||
| MTA18ASF2G72PZ-2G9J1 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ROHS3 Compliant | 288-RDIMM | 8 Weeks | 16GB | DDR4 SDRAM | 2.933GT/s | |||||||||||||||||||||||||||||||||||||
| A4D16QB8BNPBSE | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Module | 6 Weeks | 16GB | DDR4 SDRAM | 2400MT/s | |||||||||||||||||||||||||||||||||||||||
| MTA18ADF2G72PDZ-3G2E1 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | ROHS3 Compliant | 288-RDIMM | 3 Weeks | 16GB | DDR4 SDRAM | 3.2GT/s | |||||||||||||||||||||||||||||||||||||
| SQR-RD4N8G2K4SZBBB | Advantech Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SQR-RD4N | 1 (Unlimited) | RoHS Compliant | 288-RDIMM | 4 Weeks | 8GB | DDR SDRAM | |||||||||||||||||||||||||||||||||||||
| SQR-SD4M-16G2K1SNB | Advantech Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 260-SODIMM | 4 Weeks | 16GB | DDR4 SDRAM | 2133Mb/s | |||||||||||||||||||||||||||||||||||||
| AL24P7218BLF8M | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Module | 6 Weeks | 8GB | |||||||||||||||||||||||||||||||||||||||||
| A4B08QF4BLPBME | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Module | 6 Weeks | 8GB | DDR4 SDRAM | 2133MT/s | |||||||||||||||||||||||||||||||||||||||
| 75.B93E2.G040B | Apacer Memory America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 204-SODIMM | 2 Weeks | 4GB | DDR3 SDRAM | 1.6Gb/s | |||||||||||||||||||||||||||||||||||||
| A4B08QC4BLPBME | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Module | 6 Weeks | 8GB | DDR4 SDRAM | 2133MT/s | |||||||||||||||||||||||||||||||||||||||
| MTEDFAE016SCA-1P2IT | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eU500 | ROHS3 Compliant | Module | 6 Weeks | 16GB | FLASH - NAND (SLC) | ||||||||||||||||||||||||||||||||||||||
| SQR-RD4N16G2K4SZBB | Advantech Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SQR-RD4N | 1 (Unlimited) | RoHS Compliant | 288-RDIMM | 4 Weeks | 16GB | DDR SDRAM | |||||||||||||||||||||||||||||||||||||
| MTA18ADF2G72AZ-3G2E1 | Micron Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | CMOS | SYNCHRONOUS | 18.9mm | ROHS3 Compliant | 288-UDIMM | 133.35mm | 3.9mm | 288 | 16 Weeks | 1 | EAR99 | AUTO/SELF REFRESH; WD-MAX | 1 | NO | DUAL | NO LEAD | 1.2V | OTHER | 85°C | 1.26V | 1.14V | R-XDMA-N288 | 16GB | DDR4 SDRAM | 3.2GT/s | 2GX72 | 72 | 154618822656 bit | DUAL BANK PAGE BURST | ||||||||||||||
| AL24P72L8BLK0S | ATP Electronics, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Module | 6 Weeks | 8GB |
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