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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Standby Current-Max | Word Size | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | I2C Control Byte | Access Time (Max) | Sync/Async | Page Size |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DS28CZ04G-4+T | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds28cz04g4t-datasheets-2514.pdf | 12-WQFN Exposed Pad | 4mm | 4mm | 12 | 2-Wire, I2C, Serial | EAR99 | 8542.32.00.51 | 1 | e3 | MATTE TIN | YES | 2V~5.25V | QUAD | 260 | 3.6V | 0.8mm | DS28CZ04 | 12 | 5.25V | 2V | NOT SPECIFIED | 2.5/5V | 0.0005mA | Not Qualified | S-XQCC-N12 | 4Kb 512 x 8 | Non-Volatile | 5V | 400kHz | EEPROM | I2C | 512X8 | 8 | 4096 bit | I2C | 200000 Write/Erase Cycles | 40 | HARDWARE | 1010DDMR | |||||||||||||||||||||||||||||||||||||
| MT46H64M16LFCK-5:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt46h32m32lfcm6itatr-datasheets-2082.pdf | 60-VFBGA | 1.7V~1.95V | MT46H64M16 | 1Gb 64M x 16 | Volatile | 5ns | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS2433G+T&R | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | EEPROM | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds2433xstr-datasheets-6825.pdf | 2-SFN | 2 | Serial | 4 kb | No | DS2433 | 2-SFN (6x6) | 4Kb 256 x 16 | Non-Volatile | 2μs | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS2431Q+U | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Strip | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds2431ptr-datasheets-0434.pdf | 6-WDFN Exposed Pad | 6 | 3 Weeks | Unknown | 5.25V | 2.8V | 6 | Serial | 1 kb | yes | EAR99 | No | 8542.32.00.51 | e3 | Matte Tin (Sn) | YES | DUAL | 225 | 0.95mm | DS2431 | 3/5V | 1Kb 256 x 4 | Non-Volatile | 2μs | EEPROM | 1-Wire® | 4 | 50000 Write/Erase Cycles | 40 | |||||||||||||||||||||||||||||||||||||||||||||||||
| MT48H32M16LFBF-75:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt48h32m16lfbf75itbtr-datasheets-2351.pdf | 54-VFBGA | 9mm | 8mm | 54 | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | YES | 1.7V~1.95V | BOTTOM | 260 | 1.8V | 0.8mm | MT48H32M16 | 1.95V | 1.7V | 30 | R-PBGA-B54 | 512Mb 32M x 16 | Volatile | 5.4ns | 133MHz | DRAM | Parallel | 32MX16 | 16 | 15ns | 536870912 bit | ||||||||||||||||||||||||||||||||||||||||||||
| BQ4011YMA-150N | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | 9.53mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-bq4011yma70-datasheets-8346.pdf | 28-DIP Module (0.61, 15.49mm) | 37.72mm | 5V | Lead Free | 28 | 28 | 256 kb | EAR99 | No | 8542.32.00.41 | 1 | NO | 4.5V~5.5V | DUAL | 5V | 2.54mm | BQ4011 | SRAMs | 5V | 0.075mA | 256Kb 32K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 32KX8 | 8 | 150ns | 0.004A | 150 ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| MT48H32M16LFBF-75 IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt48h32m16lfbf75itbtr-datasheets-2351.pdf | 54-VFBGA | 9mm | 8mm | 54 | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | YES | 1.7V~1.95V | BOTTOM | 260 | 1.8V | 0.8mm | MT48H32M16 | 1.95V | 1.7V | 30 | R-PBGA-B54 | 512Mb 32M x 16 | Volatile | 5.4ns | 133MHz | DRAM | Parallel | 32MX16 | 16 | 15ns | 536870912 bit | ||||||||||||||||||||||||||||||||||||||||||||
| MT46H16M32LFCM-6:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 2 (1 Year) | SDRAM - Mobile LPDDR | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt46h16m32lfcm5btr-datasheets-2319.pdf | 90-VFBGA | 1.7V~1.95V | MT46H16M32 | 512Mb 16M x 32 | Volatile | 5ns | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT46H32M32LFCM-5:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 2 (1 Year) | SDRAM - Mobile LPDDR | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt46h32m32lfcm6itatr-datasheets-2082.pdf | 90-VFBGA | 1.7V~1.95V | MT46H32M32 | 1Gb 32M x 32 | Volatile | 5ns | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS1258AB-70IND# | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1258y100-datasheets-6698.pdf | 40-DIP Module (0.610, 15.495mm) | 40 | 40 | no | 3A991.B.2.A | 10 YEAR DATA RETENTION | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | NO | 4.75V~5.25V | DUAL | NOT SPECIFIED | 5V | 2.54mm | DS1258AB | 40 | 5.25V | 4.75V | NOT SPECIFIED | SRAMs | 5V | 0.17mA | Not Qualified | 2Mb 128K x 16 | Non-Volatile | 16b | NVSRAM | Parallel | 128KX16 | 16 | 70ns | 2097152 bit | 0.01A | 70 ns | ||||||||||||||||||||||||||||||||||||||||
| MT48LC16M8A2BB-7E:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 2 (1 Year) | SDRAM | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt48lc16m8a2fb75gtr-datasheets-0123.pdf | 60-FBGA | 3V~3.6V | MT48LC16M8A2 | 128Mb 16M x 8 | Volatile | 5.4ns | 133MHz | DRAM | Parallel | 14ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M25PE10-VMN6P | Micron Technology Inc. | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-m25pe10vmn6p-datasheets-2316.pdf | 8-SOIC (0.154, 3.90mm Width) | 3.3V | 8 | SPI, Serial | 1 Mb | Gold | No | 12mA | 2.7V | 2.7V~3.6V | M25PE10 | 1Mb 128K x 8 | Non-Volatile | 8 ns | 75MHz | 1b | FLASH | SPI | 15ms, 3ms | 8b | Synchronous | 256B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT46H32M16LFBF-5:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt46h16m32lfcm5btr-datasheets-2319.pdf | 60-VFBGA | 1.7V~1.95V | MT46H32M16 | 512Mb 32M x 16 | Volatile | 5ns | 200MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT46H16M32LFCM-5:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 2 (1 Year) | SDRAM - Mobile LPDDR | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt46h16m32lfcm5btr-datasheets-2319.pdf | 90-VFBGA | 1.7V~1.95V | MT46H16M32 | 90-VFBGA (10x13) | 512Mb 16M x 32 | Volatile | 5ns | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT48LC8M16LFB4-75M:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPSDR | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt48lc8m16lff475mitg-datasheets-1230.pdf | 54-VFBGA | 3V~3.6V | MT48LC8M16 | 128Mb 8M x 16 | Volatile | 5.4ns | 133MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT41J64M16LA-187E:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR3 | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt41j64m16la187ebtr-datasheets-2311.pdf | 96-FBGA | 1.425V~1.575V | MT41J64M16 | 96-FBGA (9x15.5) | 1Gb 64M x 16 | Volatile | 533MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT48H16M32LFCM-75:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 2 (1 Year) | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt48h32m16lfbf75itbtr-datasheets-2351.pdf | 90-VFBGA | 13mm | 10mm | 90 | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | YES | 1.7V~1.95V | BOTTOM | 260 | 1.8V | 0.8mm | MT48H16M32 | 1.95V | 1.7V | 30 | R-PBGA-B90 | 512Mb 16M x 32 | Volatile | 5.4ns | 133MHz | DRAM | Parallel | 16MX32 | 32 | 15ns | 536870912 bit | ||||||||||||||||||||||||||||||||||||||||||||
| MT29F4G08ABCHC-ET:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 2 (1 Year) | FLASH - NAND | ROHS3 Compliant | 63-VFBGA | 1.7V~1.95V | MT29F4G08 | 4Gb 512M x 8 | Non-Volatile | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BQ4017YMC-70 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | 9.53mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-bq4017ymc70-datasheets-2289.pdf | 36-DIP Module (0.610, 15.49mm) | 52.96mm | 5V | Contains Lead | 36 | 36 | 16 Mb | no | 3A991.B.2.A | 5 YEARS OF DATA RETENTION | No | 8542.32.00.41 | 1 | 115mA | 4.5V~5.5V | DUAL | 5V | 2.54mm | BQ4017 | 36 | SRAMs | 5V | 16Mb 2M x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 2MX8 | 8 | 70ns | 0.017A | 8b | 70 ns | ||||||||||||||||||||||||||||||||||||||||||||
| MT29F4G08ABCHC:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 63-VFBGA | 1.7V~1.95V | MT29F4G08 | 4Gb 512M x 8 | Non-Volatile | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F2G16ABDHC:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 2 (1 Year) | FLASH - NAND | ASYNCHRONOUS | 1mm | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt29f2g08aadwpdtr-datasheets-2217.pdf | 63-VFBGA | 13mm | 10.5mm | 63 | 3A991.B.1.A | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | YES | 1.7V~1.95V | BOTTOM | 260 | 1.8V | 0.8mm | MT29F2G16 | 1.95V | 1.65V | 30 | R-PBGA-B63 | 2Gb 128M x 16 | Non-Volatile | 1.8V | FLASH | Parallel | 128MX16 | 16 | 2147483648 bit | ||||||||||||||||||||||||||||||||||||||||||||||||
| BQ4011YMA-70N | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-bq4011yma70-datasheets-8346.pdf | 28-DIP Module (0.61, 15.49mm) | 37.72mm | 9.4mm | 18.42mm | 5V | Contains Lead | 28 | 28 | 256 kb | no | EAR99 | No | 8542.32.00.41 | 1 | 50mA | 4.5V~5.5V | DUAL | 5V | 2.54mm | BQ4011 | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 32KX8 | 70ns | 0.004A | 8b | 70 ns | ||||||||||||||||||||||||||||||||||||||||||||||
| MT29F4G16AACWC-ET:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 2 (1 Year) | FLASH - NAND | ROHS3 Compliant | 48-TSOP | 2.7V~3.6V | MT29F4G16 | 4Gb 256M x 16 | Non-Volatile | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BQ4015MA-85 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-bq4015yma70-datasheets-8336.pdf | 32-DIP Module (0.61, 15.49mm) | 32 | 32 | yes | 3A991.B.2.A | 1 | NO | 4.75V~5.5V | DUAL | NOT SPECIFIED | 5V | 2.54mm | BQ4015 | 5.5V | 4.75V | NOT SPECIFIED | SRAMs | 5V | 0.09mA | Not Qualified | 4Mb 512K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 512KX8 | 8 | 85ns | 4194304 bit | 0.001A | 85 ns | |||||||||||||||||||||||||||||||||||||||||||||||
| MT29F2G08ABDHC-ET:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt29f2g08aadwpdtr-datasheets-2217.pdf | 63-VFBGA | 1.7V~1.95V | MT29F2G08 | 63-VFBGA | 2Gb 256M x 8 | Non-Volatile | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M25P20-VMN6 | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | FLASH - NOR | 1.75mm | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-m25p20vmn6ttr-datasheets-2802.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.3V | 8 | 8 | SPI, Serial | 2 Mb | EAR99 | 40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST | 1 | 8mA | e0 | TIN LEAD | 2.3V~3.6V | DUAL | 3V | 1.27mm | M25P20 | 8 | 3.6V | 2.7V | Not Qualified | 2Mb 256K x 8 | Non-Volatile | 8 ns | 2.7V | 50MHz | 1b | FLASH | SPI | 8 | 15ms, 5ms | 8b | Synchronous | ||||||||||||||||||||||||||||||||||||||||||
| MT29F2G16ABDHC-ET:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 2 (1 Year) | FLASH - NAND | ASYNCHRONOUS | 1mm | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt29f2g08aadwpdtr-datasheets-2217.pdf | 63-VFBGA | 13mm | 10.5mm | 63 | 3A991.B.1.A | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | YES | 1.7V~1.95V | BOTTOM | 260 | 1.8V | 0.8mm | MT29F2G16 | 1.95V | 1.65V | 30 | R-PBGA-B63 | 2Gb 128M x 16 | Non-Volatile | 1.8V | FLASH | Parallel | 128MX16 | 16 | 2147483648 bit | ||||||||||||||||||||||||||||||||||||||||||||||||
| M24C16-WMN6 | STMicroelectronics | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | CMOS | SYNCHRONOUS | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-m24c16rdw6tp-datasheets-8262.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.25mm | 3.9mm | 8 | 8 | 2-Wire, I2C, Serial | 16 kb | no | EAR99 | unknown | 1 | 2mA | e0 | 2.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 1.27mm | M24C16 | 8 | 5.5V | 2.5V | NOT SPECIFIED | 3/5V | Not Qualified | 16Kb 2K x 8 | Non-Volatile | OPEN-DRAIN | 900ns | 400kHz | EEPROM | I2C | 5ms | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010MMMR | |||||||||||||||||||||||||||||||||||
| BQ4010YMA-70N | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | 50mA | 9.53mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-bq4010yma70-datasheets-8378.pdf | 28-DIP Module (0.61, 15.49mm) | 37.72mm | 5V | Contains Lead | 28 | 28 | 64 kb | no | EAR99 | No | 8542.32.00.41 | 1 | 50mA | 4.5V~5.5V | DUAL | 5V | 2.54mm | BQ4010 | SRAMs | 5V | 64Kb 8K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 8KX8 | 8 | 70ns | 0.004A | 8b | 70 ns | |||||||||||||||||||||||||||||||||||||||||||||
| MT29F4G08AACWC:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 48-TSOP | 2.7V~3.6V | MT29F4G08 | 4Gb 512M x 8 | Non-Volatile | FLASH | Parallel |
