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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Data Bus Width | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Alternate Memory Width | Standby Current-Max | Word Size | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Sync/Async | Page Size | Access Mode |
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| EDB5432BEPA-1DAAT-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb5432bebh1ditfrtr-datasheets-1144.pdf | 168-WFBGA | 12mm | 12mm | 168 | 8 Weeks | 168 | 512 Mb | 1 | EAR99 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 533MHz | 1 | YES | 1.14V~1.95V | BOTTOM | NOT SPECIFIED | 1.2V | 0.5mm | 1.3V | 1.14V | NOT SPECIFIED | 512Mb 16M x 32 | Volatile | DRAM | Parallel | 16MX32 | 32 | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||
| EDF8132A3PK-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 9 Weeks | 1.14V~1.95V | 8Gb 256M x 32 | Volatile | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EMFA164A2PB-DV-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | FBGA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFP164A3PD-MD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 24Gb 384M x 64 | Volatile | 1067MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDF8164A3PK-JD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | SYNCHRONOUS | 0.7mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edf8164a3pkjdfd-datasheets-8573.pdf | 216-WFBGA | 12mm | 12mm | 216 | 9 Weeks | 1 | EAR99 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | 1 | YES | 1.14V~1.95V | BOTTOM | 1.2V | 0.4mm | 1.3V | 1.14V | S-PBGA-B216 | 8Gb 128M x 64 | Volatile | 933MHz | DRAM | Parallel | 128MX64 | 64 | 8589934592 bit | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||
| EDF8132A3PF-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | 1.14V~1.95V | 8Gb 256M x 32 | Volatile | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDBA232B2PD-1D-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | FBGA | 9 Weeks | 1.14V~1.95V | 16Gb 512M x 32 | Volatile | 533MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFB232A1MA-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 32Gb 1G x 32 | Volatile | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFA232A2PF-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | 85°C | -30°C | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.2V | 168 | 16 Gb | Copper, Silver, Tin | 800MHz | 1.14V~1.95V | 168-FBGA (12x12) | 16Gb 512M x 32 | Volatile | 32b | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N25Q128A11ESECFE | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 111 Weeks | 1.7V~2V | 8-SOP2 | 128Mb 32M x 4 | Non-Volatile | 108MHz | FLASH | SPI | 8ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFM432A1PH-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 9 Weeks | 1.14V~1.95V | 168-FBGA (12x12) | 12Gb 384M x 32 | Volatile | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDBM432B3PD-1D-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | 1.14V~1.95V | 12Gb 384M x 32 | Volatile | 533MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EMFA232A2PF-DV-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | FBGA | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFA232A2PB-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 9 Weeks | 1.14V~1.95V | 216-FBGA (12x12) | 16Gb 512M x 32 | Volatile | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N25Q064A11ESE40E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Bulk | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 2.16mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-n25q064a11ese40e-datasheets-8574.pdf | 8-SOIC (0.154, 3.90mm Width) | 5.285mm | 5.285mm | 8 | unknown | 1 | YES | 1.7V~2V | DUAL | 1.8V | 1.27mm | 2V | 1.7V | S-PDSO-G8 | 64Mb 16M x 4 | Non-Volatile | 1.8V | 108MHz | FLASH | SPI | 64MX1 | 1 | 8ms, 5ms | 67108864 bit | SERIAL | ||||||||||||||||||||||||||||||||||||||||||||
| EDFA164A2PM-JD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 16Gb 256M x 64 | Volatile | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFA232A2PB-JD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 111 Weeks | 1.14V~1.95V | 216-FBGA (12x12) | 16Gb 512M x 32 | Volatile | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDFB232A1MA-JD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 32Gb 1G x 32 | Volatile | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDB5432BEPA-1DIT-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb5432bebh1ditfrtr-datasheets-1144.pdf | 168-WFBGA | 12mm | 12mm | 168 | 12 Weeks | 168 | 512 Mb | 1 | EAR99 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 533MHz | 1 | YES | 1.14V~1.95V | BOTTOM | 1.2V | 0.5mm | 1.3V | 1.14V | 512Mb 16M x 32 | Volatile | DRAM | Parallel | 16MX32 | 32 | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||
| EDW4032BABG-70-F-D | Micron Technology Inc. | $12.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SGRAM - GDDR5 | 1.2mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edw4032babg60fd-datasheets-8569.pdf | 170-TFBGA | 14mm | 170 | 12 Weeks | 4 Gb | 1 | EAR99 | Copper, Silver, Tin | No | 1 | 1.31V~1.65V | BOTTOM | 1.35V | 0.8mm | 1.3905V | 1.3095V | R-PBGA-B170 | 4Gb 128M x 32 | Volatile | 32b | 1.75GHz | 14b | RAM | Parallel | 128MX32 | 32 | 16 | MULTI BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||
| EDFA364A3MA-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | SYNCHRONOUS | 0.85mm | ROHS3 Compliant | FBGA | 12.5mm | 12.5mm | 253 | 9 Weeks | 1 | EAR99 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.14V~1.95V | BOTTOM | NOT SPECIFIED | 1.2V | 0.5mm | 1.3V | 1.14V | NOT SPECIFIED | S-PBGA-B253 | 16Gb 256M x 64 | Volatile | 800MHz | DRAM | Parallel | 256MX64 | 64 | 17179869184 bit | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||
| EDF8132A3PB-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 216-WFBGA (12x12) | 8Gb 256M x 32 | Volatile | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDF8132A3MA-JD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | SYNCHRONOUS | 0.85mm | ROHS3 Compliant | FBGA | 11.5mm | 10.5mm | 178 | 1 | EAR99 | AUTO/SELF REFRESH | 1 | e1 | TIN SILVER COPPER | YES | 1.14V~1.95V | BOTTOM | 260 | 1.2V | 0.8mm | 1.3V | 1.14V | 30 | R-PBGA-B178 | 8Gb 256M x 32 | Volatile | 933MHz | DRAM | Parallel | 256MX32 | 32 | 8589934592 bit | DUAL BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||
| MT25QL02GCBA8E12-0SI | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt25ql02gcba8e120si-datasheets-8566.pdf | 24-TBGA | 8mm | 6mm | 24 | 24 | SPI, Serial | MEMORY WIDTH CAN ALSO ORGANISED AS X1 | 1 | e1 | TIN SILVER COPPER | YES | 2.7V~3.6V | BOTTOM | 260 | 3V | 1mm | 3.6V | 2.7V | 30 | 3/3.3V | 0.06mA | Not Qualified | 2Gb 256M x 8 | Non-Volatile | 3V | 133MHz | FLASH | SPI | 512MX4 | 4 | 8ms, 2.8ms | 2147483648 bit | 2 | 0.00005A | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | ||||||||||||||||||||||||||||||
| N25Q512A11GSF40G | Micron Technology Inc. | $7.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-n25q512a11g1240e-datasheets-8559.pdf | 16-SOIC (0.295, 7.50mm Width) | 10.3mm | 2.5mm | 7.5mm | 1.8V | 16 | No SVHC | 16 | SPI, Serial | 512 Mb | yes | Tin | No | 1 | 20mA | 1.7V | YES | 1.7V~2V | DUAL | 260 | 1.8V | 1.27mm | 30 | 512Mb 128M x 4 | Non-Volatile | 8 ns | 108MHz | 32b | FLASH | SPI | 512MX1 | 8ms, 5ms | 8b | Synchronous | 256B | ||||||||||||||||||||||||||||||||||
| MT29F128G08CFCGBWP-10M:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 26 Weeks | 2.7V~3.6V | 48-TSOP I | 128Gb 16G x 8 | Non-Volatile | 100MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N25Q512A81GSF40G | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | 2.65mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-n25q512a11g1240e-datasheets-8559.pdf | 16-SOIC (0.295, 7.50mm Width) | 10.3mm | 7.5mm | 1.8V | 16 | 16 | SPI, Serial | 512 Mb | No | 1 | 1.7V | YES | 1.7V~2V | DUAL | 1.8V | 1.27mm | 512Mb 128M x 4 | Non-Volatile | 108MHz | FLASH | SPI | 512MX1 | 1 | 8ms, 5ms | 256B | |||||||||||||||||||||||||||||||||||||||||||||
| EDFP164A3PD-JD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | FBGA | 14mm | 14mm | 256 | 1 | EAR99 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.14V~1.95V | BOTTOM | NOT SPECIFIED | 1.2V | 0.4mm | 1.3V | 1.14V | NOT SPECIFIED | S-PBGA-B256 | 24Gb 384M x 64 | Volatile | 933MHz | DRAM | Parallel | 384MX64 | 64 | 25769803776 bit | DUAL BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||
| EMFA164A2PF-DV-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | FBGA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT28HL64GRBA6EBL-0GCT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant |
