Products
Manufacturer
RFQ
NEWS
ContactMemory(55331)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Frequency | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | Ambient Temperature Range High | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Ready/Busy | Boot Block | Common Flash Interface | Page Size | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Standby Voltage-Min | Memory IC Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT29F16G08ABCBBH1-12AIT:B TR | Micron Technology Inc. | $28.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-VBGA | 5 Weeks | 2.7V~3.6V | 16Gb 2G x 8 | Non-Volatile | 83MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS1230AB-120+ | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1230ab120-datasheets-7498.pdf | 28-DIP Module (0.600, 15.24mm) | Lead Free | 28 | 6 Weeks | 28 | yes | EAR99 | not_compliant | 8473.30.11.40 | 1 | e3 | MATTE TIN | NO | 4.75V~5.25V | DUAL | NOT SPECIFIED | 5V | 2.54mm | DS1230AB | 28 | 5.25V | 4.75V | NOT SPECIFIED | SRAMs | 5V | 0.085mA | Not Qualified | 256Kb 32K x 8 | Non-Volatile | NVSRAM | Parallel | 32KX8 | 8 | 120ns | 262144 bit | 0.0006A | 120 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR2A16AYS35 | Everspin Technologies Inc. | $23.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | 105mA | 1.2mm | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr2a16acma35-datasheets-8264.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 3.3V | Lead Free | 44 | 10 Weeks | 44 | 4 Mb | EAR99 | No | 8542.32.00.71 | 1 | 155mA | 3V~3.6V | DUAL | 3.3V | 0.8mm | 44 | 3.6V | 3V | 4Mb 256K x 16 | Non-Volatile | 16b | RAM | Parallel | 256KX16 | 16 | 35ns | 0.028A | 16b | 35 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| THGBMJG8C2LBAIL | Kioxia America, Inc. | $15.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -25°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | RoHS Compliant | 153-WFBGA | 12 Weeks | 256Gb 32G x 8 | Non-Volatile | FLASH | eMMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS1230Y-70IND+ | Maxim Integrated | $8.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | 70GHz | 85mA | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1230ab120-datasheets-7498.pdf | 28-DIP Module (0.600, 15.24mm) | 39.37mm | 10.67mm | 18.8mm | 5V | Lead Free | 28 | 6 Weeks | Unknown | 28 | 256 kb | yes | EAR99 | No | 8473.30.11.40 | 1 | e3 | MATTE TIN | 4.5V~5.5V | DUAL | 5V | 2.54mm | DS1230Y | 28 | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 8b | 15b | NVSRAM | Parallel | 32KX8 | 70ns | 0.0006A | 70 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY15B104Q-LHXIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FRAM (Ferroelectric RAM) | SYNCHRONOUS | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/cypresssemiconductor-cy15b104qlhxit-datasheets-3041.pdf | 8-WDFN Exposed Pad | 6mm | 3.3V | Lead Free | 8 | 13 Weeks | 8 | SPI, Serial | 4 Mb | EAR99 | Tin | 1 | 2V~3.6V | DUAL | 260 | 3.3V | 1.27mm | 3.6V | 2V | 30 | 4Mb 512K x 8 | Non-Volatile | 8b | 9 ns | 40MHz | FRAM | SPI | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1051DV33-10BAXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 10GHz | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1051dv3310baxi-datasheets-7530.pdf | 48-TFBGA | 8mm | 3.3V | Lead Free | 48 | 10 Weeks | 48 | 8 Mb | yes | 1 | No | 1 | 110mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3V~3.6V | BOTTOM | 260 | 3.3V | 0.75mm | CY7C1051 | 48 | 3.6V | 3V | 20 | 8Mb 512K x 16 | Volatile | 3-STATE | 19b | SRAM | Parallel | 16 | 10ns | 0.02A | 16b | Asynchronous | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70GL02GS12FHIV10 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GL-S | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ASYNCHRONOUS | 1.4mm | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s70gl02gs11fhi010-datasheets-7383.pdf | 64-LBGA | 13mm | 11mm | 64 | 13 Weeks | 64 | 8542.32.00.71 | 1 | YES | 1.65V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 1mm | 3.6V | 2.7V | NOT SPECIFIED | 3/3.3V | 0.16mA | Not Qualified | 2Gb 128M x 16 | Non-Volatile | 120ns | 3V | FLASH | Parallel | 128MX16 | 16 | 8 | 0.0002A | YES | YES | YES | 2K | 128K | YES | BOTTOM/TOP | YES | 16/32words | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62167DV30LL-55ZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SMD/SMT | SRAM - Asynchronous | 1MHz | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62167dv30ll55zxi-datasheets-7539.pdf | 48-TFSOP (0.724, 18.40mm Width) | 18.4mm | 1.2mm | 12mm | 3V | Lead Free | 30mA | 48 | 13 Weeks | No SVHC | 48 | 16 Mb | yes | 1 | CONFIGURABLE AS 2M X 8 ALSO | No | 1 | 30mA | e3 | Matte Tin (Sn) | 2.2V~3.6V | DUAL | 260 | 3V | 0.5mm | CY62167 | 48 | 3.6V | 2.2V | 30 | 16Mb 1M x 16 | Volatile | 3-STATE | 20b | SRAM | Parallel | 55ns | 16b | 55 ns | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
| FM25V20A-DG | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | FRAM (Ferroelectric RAM) | SYNCHRONOUS | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-fm25v20ag-datasheets-7393.pdf | 8-WDFN Exposed Pad | 6mm | 3.3V | Lead Free | 8 | 10 Weeks | 8 | SPI, Serial | 2 Mb | EAR99 | 1 | 3mA | e3 | Matte Tin (Sn) | YES | 2V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 1.27mm | 3.6V | 2V | NOT SPECIFIED | 2Mb 256K x 8 | Non-Volatile | 8b | 16 ns | 40MHz | FRAM | SPI | 8 | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT28FW02GBBA1HPC-0AAT | Micron Technology Inc. | $80.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt28fw02gbba1hpc0aat-datasheets-7548.pdf | 64-LBGA | 6 Weeks | 1.7V~3.6V | 64-LBGA (11x13) | 2Gb 128M x 16 | Non-Volatile | 105ns | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX66L2G45GXRI00 | Macronix | $31.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tray | 3 (168 Hours) | CMOS | SYNCHRONOUS | 1.3mm | https://pdf.utmel.com/r/datasheets/macronix-mx66l2g45gxri00-datasheets-7459.pdf | 24-TBGA, CSPBGA | 8mm | 6mm | 24 | 10 Weeks | IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1 | 1 | YES | BOTTOM | BALL | 3V | 1mm | INDUSTRIAL | 85°C | -40°C | 3.6V | 2.7V | R-PBGA-B24 | 3V | 133MHz | 256MX8 | 8 | 2147483648 bit | SERIAL | 4 | FLASH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR2A16AVYS35 | Everspin Technologies Inc. | $21.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SMD/SMT | MRAM (Magnetoresistive RAM) | 105mA | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr2a16acma35-datasheets-8264.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 3.3V | Lead Free | 44 | 10 Weeks | No SVHC | 44 | 4 Mb | EAR99 | 8542.32.00.71 | 1 | 165mA | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 44 | 3.6V | 3V | NOT SPECIFIED | Not Qualified | 4Mb 256K x 16 | Non-Volatile | 16b | RAM | Parallel | 256KX16 | 16 | 35ns | 0.028A | 16b | 35 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR2A08ACYS35 | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | 50mA | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr2a08acma35-datasheets-8425.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 3.3V | Lead Free | 44 | 10 Weeks | 44 | 4 Mb | EAR99 | 8542.32.00.71 | 1 | 135mA | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 44 | 3.6V | 3V | NOT SPECIFIED | Not Qualified | 4Mb 512K x 8 | Non-Volatile | 8b | RAM | Parallel | 256KX8 | 8 | 35ns | 0.02A | 8b | 35 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR2A16ACYS35 | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SMD/SMT | MRAM (Magnetoresistive RAM) | 105mA | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr2a16acma35-datasheets-8264.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 1.2mm | 3.3V | Lead Free | 44 | 10 Weeks | No SVHC | 44 | 4 Mb | yes | EAR99 | No | MR2A16ACYS35 | 8542.32.00.71 | 1 | 165mA | 3V~3.6V | DUAL | 3.3V | 0.8mm | 44 | 3.6V | 3V | 85°C | 4Mb 256K x 16 | Non-Volatile | 16b | RAM | Parallel | 256KX16 | 16 | 35ns | 0.028A | 16b | 35 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS1225Y-200+ | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1225y150-datasheets-7360.pdf | 28-DIP Module (0.600, 15.24mm) | 28 | 6 Weeks | 28 | yes | EAR99 | 10 YEAR DATA RETENTION | not_compliant | 8542.32.00.41 | 1 | e3 | MATTE TIN | NO | 4.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 2.54mm | DS1225Y | 28 | 5.5V | 4.5V | NOT SPECIFIED | SRAMs | 5V | 0.075mA | Not Qualified | 64Kb 8K x 8 | Non-Volatile | NVSRAM | Parallel | 8KX8 | 8 | 200ns | 65536 bit | 0.005A | 200 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A256M16LY-062E AUT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Bulk | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 96-TFBGA | 1.14V~1.26V | 4Gb 256M x 16 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV102416BLL-10MLI | ISSI, Integrated Silicon Solution Inc | $19.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 48-TFBGA | 3.3V | 48 | 8 Weeks | No SVHC | 48 | 16 Mb | yes | 1 | No | 1 | 95mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 2.4V~3.6V | BOTTOM | 260 | 3.3V | 0.75mm | 48 | 3.6V | 2.4V | 40 | 16Mb 1M x 16 | Volatile | 3-STATE | 20b | SRAM | Parallel | 16 | 10ns | 0.02A | 16b | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR25H40CDC | Everspin Technologies Inc. | $25.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | 1.05mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr25h40cdf-datasheets-7354.pdf | 8-VDFN Exposed Pad | 6mm | 5mm | 3.3V | Lead Free | 8 | 14 Weeks | 37.393021mg | 8 | SPI, Serial | 4 Mb | EAR99 | No | 1 | 42mA | 3V~3.6V | DUAL | 3.3V | 1.27mm | 8 | 3.6V | 3V | 4Mb 512K x 8 | Non-Volatile | 9 ns | 40MHz | RAM | SPI | 8 | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4C32M16SB-7TIN | Alliance Memory, Inc. | $21.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c32m16sb7tin-datasheets-7280.pdf | 54-TSOP (0.400, 10.16mm Width) | 22.22mm | 10.16mm | 54 | 8 Weeks | yes | 1 | AUTO/SELF REFRESH | 1 | YES | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 3.6V | 3V | NOT SPECIFIED | R-PDSO-G54 | 512Mb 32M x 16 | Volatile | 5.4ns | 143MHz | DRAM | Parallel | 32MX16 | 16 | 14ns | 536870912 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62167EV30LL-45ZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1MHz | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62167ev30ll45zxi-datasheets-7372.pdf | 48-TFSOP (0.724, 18.40mm Width) | 18.4mm | 1.2mm | 12mm | 3V | Lead Free | 30mA | 48 | 6 Weeks | No SVHC | 48 | 16 Mb | yes | 1 | No | 1 | 30mA | e3 | Matte Tin (Sn) | 2.2V~3.6V | DUAL | 260 | 3V | 0.5mm | CY62167 | 48 | 3.6V | 2.2V | 30 | 16Mb 2M x 8 1M x 16 | Volatile | 3-STATE | 20b | SRAM | Parallel | 45ns | 45 ns | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4C32M16SB-6TIN | Alliance Memory, Inc. | $13.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c32m16sb7tin-datasheets-7280.pdf | 54-TSOP (0.400, 10.16mm Width) | 22.22mm | 10.16mm | 54 | 8 Weeks | 1 | AUTO/SELF REFRESH | 1 | YES | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 3.6V | 3V | NOT SPECIFIED | R-PDSO-G54 | 512Mb 32M x 16 | Volatile | 5ns | 166MHz | DRAM | Parallel | 32MX16 | 16 | 12ns | 536870912 bit | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70GL02GS11FHI010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GL-S | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s70gl02gs11fhi010-datasheets-7383.pdf | 64-LBGA | 13mm | 1.4mm | 64 | 13 Weeks | No SVHC | 64 | 2 Gb | Copper, Silver, Tin | No | 8542.32.00.71 | 1 | 60mA | 2.7V~3.6V | BOTTOM | 3V | 1mm | 3.6V | 2.7V | 3/3.3V | 2Gb 128M x 16 | Non-Volatile | 16b | 110ns | 3V | 27b | FLASH | Parallel | 128MX16 | 16 | 8 | 0.0002A | Asynchronous | YES | YES | YES | 2K | 128K | YES | BOTTOM/TOP | YES | 16/32words | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MT47H128M16RT-25E IT:C | Micron Technology Inc. | $5.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR2 | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt47h128m16rt25eitc-datasheets-7288.pdf | 84-TFBGA | 4 Weeks | 1.7V~1.9V | MT47H128M16 | 84-FBGA (9x12.5) | 2Gb 128M x 16 | Volatile | 400ps | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FM25V20A-G | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 2.03mm | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-fm25v20ag-datasheets-7393.pdf | 8-SOIC (0.209, 5.30mm Width) | 3.3V | Lead Free | 8 | 6 Weeks | 8 | SPI, Serial | 2 Mb | EAR99 | 1 | YES | 2V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 1.27mm | 3.6V | 2V | NOT SPECIFIED | 2Mb 256K x 8 | Non-Volatile | 8b | 40MHz | FRAM | SPI | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S16320D-7TLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM | 1.2mm | ROHS3 Compliant | 54-TSOP (0.400, 10.16mm Width) | 22.22mm | 3.3V | 54 | 6 Weeks | No SVHC | 54 | 512 Mb | 1 | EAR99 | AUTO/SELF REFRESH | Tin | No | 1 | 170mA | e3 | 3V~3.6V | DUAL | 3.3V | 0.8mm | 54 | 3.6V | 3V | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 5.4ns | 143MHz | 15b | DRAM | Parallel | 32MX16 | 16 | 0.004A | COMMON | 8192 | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70GL02GS12FHIV20 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GL-S | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s70gl02gs11fhi010-datasheets-7383.pdf | 64-LBGA | 13mm | 1.4mm | 160mA | 64 | 13 Weeks | 64 | 2 Gb | No | 8542.32.00.71 | 1 | 60mA | 1.65V~3.6V | BOTTOM | 3V | 1mm | 3.6V | 2.7V | 3/3.3V | 2Gb 128M x 16 | Non-Volatile | 16b | 120ns | 3V | 27b | FLASH | Parallel | 128MX16 | 16 | 8 | 0.0002A | Asynchronous | YES | YES | YES | 2K | 128K | YES | BOTTOM/TOP | YES | 16/32words | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32160F-7TLI | ISSI, Integrated Silicon Solution Inc | $11.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 86-TFSOP (0.400, 10.16mm Width) | 13mm | 8mm | 90 | 8 Weeks | 86 | 1 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | 1 | YES | 3V~3.6V | BOTTOM | 3.3V | 0.8mm | 3.6V | 3V | 3.3V | 0.23mA | Not Qualified | R-PBGA-B90 | 512Mb 16M x 32 | Volatile | 3-STATE | 5.4ns | 143MHz | DRAM | Parallel | 16MX32 | 32 | 536870912 bit | 0.004A | COMMON | 8192 | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV10248BLL-10TLI | ISSI, Integrated Silicon Solution Inc | $16.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 18.415mm | 10.16mm | 3V | 44 | 8 Weeks | No SVHC | 44 | 8 Mb | yes | 2 | 3A991 | No | 1 | 100mA | e3 | Matte Tin (Sn) - annealed | YES | 2.4V~3.6V | DUAL | 260 | 3V | 0.8mm | 44 | 3.6V | 40 | 8Mb 1M x 8 | Volatile | 3-STATE | 20b | SRAM | Parallel | 1MX8 | 10ns | 8b | 10 ns | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32160F-7BLI | ISSI, Integrated Silicon Solution Inc | $13.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 90-TFBGA | 13mm | 8mm | 90 | 8 Weeks | 1 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | 1 | YES | 3V~3.6V | BOTTOM | 3.3V | 0.8mm | 3.6V | 3V | 3.3V | 0.23mA | Not Qualified | R-PBGA-B90 | 512Mb 16M x 32 | Volatile | 3-STATE | 5.4ns | 143MHz | DRAM | Parallel | 16MX32 | 32 | 536870912 bit | 0.004A | COMMON | 8192 | 1248FP | 1248 |
