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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Alternate Memory Width | Standby Current-Max | Word Size | Write Cycle Time-Max (tWC) | Access Time (Max) | Sync/Async | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Ready/Busy | Boot Block | Common Flash Interface | Page Size | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS46DR16640B-25DBLA2-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR2 | ROHS3 Compliant | 84-TFBGA | 84 | 8 Weeks | 84 | YES | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 1.8V | 0.27mA | Not Qualified | AEC-Q100 | 1Gb 64M x 16 | Volatile | 16b | 3-STATE | 400ps | 400MHz | DRAM | Parallel | 64MX16 | 16 | 15ns | 1073741824 bit | 0.015A | COMMON | 8192 | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B512Q2A-SXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | SYNCHRONOUS | 1.727mm | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14e512q1asxi-datasheets-2224.pdf | 8-SOIC (0.154, 3.90mm Width) | 3V | Lead Free | 8 | 6 Weeks | 8 | SPI, Serial | 512 kb | yes | 3A991.B.2.A | Gold | 1 | 3mA | e4 | 1W | 2.7V~3.6V | DUAL | 260 | 3V | 1.27mm | CY14B512 | 8 | 3.6V | 2.7V | 20 | SRAMs | Not Qualified | 512Kb 64K x 8 | Non-Volatile | 8b | 9 ns | 40MHz | NVSRAM | SPI | 8 | 0.00015A | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||
| S70FS01GSDSMFI010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FS-S | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 2.65mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s70fs01gsdsbhv213-datasheets-1976.pdf | 24-TBGA | 10.3mm | 7.5mm | 16 | 13 Weeks | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.71 | 1 | YES | 1.7V~2V | DUAL | NOT SPECIFIED | 1.8V | 1.27mm | 2V | 1.7V | NOT SPECIFIED | R-PDSO-G16 | 1Gb 128M x 8 | Non-Volatile | 1.8V | 80MHz | FLASH | SPI - Quad I/O | 256MX4 | 4 | 1073741824 bit | SERIAL | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS62C10248AL-55TLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 8 Weeks | 44 | 4.5V~5.5V | 8Mb 1M x 8 | Volatile | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V35761SA200BGG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v35761s200pfg-datasheets-2070.pdf | 119-BGA | 8 Weeks | 3.135V~3.465V | IDT71V35761 | 4.5Mb 128K x 36 | Volatile | 3.1ns | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46R16320D-6BLA2-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 60-TFBGA | 13mm | 2.5V | 60 | 10 Weeks | 60 | 512 Mb | yes | 1 | AUTO/SELF REFRESH | 1 | 370mA | e3 | MATTE TIN | 2.3V~2.7V | BOTTOM | 225 | 2.5V | 1mm | 2.7V | 2.3V | NOT SPECIFIED | Not Qualified | AEC-Q100 | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 700ps | 166MHz | 15b | DRAM | Parallel | 32MX16 | 16 | 15ns | 0.025A | COMMON | 8192 | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M8RH-083E AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Tray | 3 (168 Hours) | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 78-TFBGA | 10.5mm | 9mm | 78 | 1 | EAR99 | AUTO/SELF REFRESH | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.14V~1.26V | BOTTOM | 260 | 1.2V | 0.8mm | 1.26V | 1.14V | 30 | R-PBGA-B78 | AEC-Q100 | 4Gb 512M x 8 | Volatile | 1.2GHz | DRAM | Parallel | 512MX8 | 8 | 4294967296 bit | MULTI BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS65WV102416DBLL-55CTLA3-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 18.4mm | 12mm | 48 | 10 Weeks | yes | 1 | YES | 2.2V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.5mm | 3.6V | 2.2V | NOT SPECIFIED | R-PDSO-G48 | 16Mb 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 55ns | 16777216 bit | 55 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29WS128P0PBFW003 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | WS-P | Surface Mount | -25°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NOR | ASYNCHRONOUS | 1mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/cypresssemiconductor-s29ws128p0pbfw003-datasheets-7708.pdf | 84-VFBGA | 11.6mm | 8mm | 84 | 84 | 3A991.B.1.A | SYNCHRONOUS BURST MODE OPERATION POSSIBLE | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | YES | 1.7V~1.95V | BOTTOM | 260 | 1.8V | 0.8mm | 1.95V | 1.7V | 40 | 1.8V | 0.08mA | Not Qualified | 128Mb 8M x 16 | Non-Volatile | 80ns | 1.8V | 66MHz | FLASH | Parallel | 8MX16 | 16 | 60ns | 134217728 bit | 0.000005A | YES | YES | YES | 8126 | 16K64K | YES | BOTTOM/TOP | YES | 8words | |||||||||||||||||||||||||||||||||||||||||
| 7134SA55JG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7134sa55jg-datasheets-2772.pdf | 52-LCC (J-Lead) | 13 Weeks | 4.5V~5.5V | IDT7134 | 52-PLCC (19.13x19.13) | 32Kb 4K x 8 | Volatile | 55ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V35761SA200BQG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v35761s200pfg-datasheets-2070.pdf | 165-TBGA | 12 Weeks | 3.135V~3.465V | IDT71V35761 | 165-CABGA (13x15) | 4.5Mb 128K x 36 | Volatile | 3.1ns | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43LD32640B-18BLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR2-S4 | SYNCHRONOUS | 1.1mm | ROHS3 Compliant | 134-TFBGA | 11.5mm | 10mm | 134 | 14 Weeks | 1 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.14V~1.95V | BOTTOM | NOT SPECIFIED | 1.2V | 0.65mm | 1.3V | 1.14V | NOT SPECIFIED | R-PBGA-B134 | 2Gb 64M x 32 | Volatile | 533MHz | DRAM | Parallel | 64MX32 | 32 | 15ns | 2147483648 bit | MULTI BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M8RH-075E AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Tray | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | RoHS Compliant | 78-TFBGA | 10.5mm | 9mm | 78 | 4 Weeks | 1 | AUTO/SELF REFRESH | compliant | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.14V~1.26V | BOTTOM | 260 | 1.2V | 0.8mm | 1.26V | 1.14V | 30 | R-PBGA-B78 | 4Gb 512M x 8 | Volatile | 1.33GHz | DRAM | Parallel | 512MX8 | 8 | 4294967296 bit | MULTI BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42SM16320E-75BLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 54-TFBGA | 8mm | 8mm | 54 | 12 Weeks | 1 | AUTO/SELF REFRESH | 1 | YES | 3V~3.6V | BOTTOM | NOT SPECIFIED | 3.3V | 0.8mm | 3.6V | 2.7V | NOT SPECIFIED | S-PBGA-B54 | 512Mb 32M x 16 | Volatile | 6ns | 133MHz | DRAM | Parallel | 32MX16 | 16 | 536870912 bit | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42RM32800E-6BLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 90-TFBGA | 13mm | 80mA | 90 | 90 | 1 | AUTO/SELF REFRESH | 1 | YES | 2.3V~3V | BOTTOM | 2.5V | 0.8mm | 3V | 2.3V | 2.5V | Not Qualified | 256Mb 8M x 32 | Volatile | 32b | 5.5ns | 166MHz | DRAM | Parallel | 8MX32 | 32 | 268435456 bit | 0.00001A | COMMON | 4096 | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46R16320D-5BLA1 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - DDR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 60-TFBGA | 13mm | 430mA | 60 | 10 Weeks | 60 | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | 1 | YES | 2.5V~2.7V | BOTTOM | 2.6V | 0.8mm | 60 | 2.7V | 2.5V | 2.6V | Not Qualified | AEC-Q100 | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 700ps | 200MHz | DRAM | Parallel | 32MX16 | 16 | 15ns | 536870912 bit | 0.03A | COMMON | 8192 | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||
| IS64C25616AL-12CTLA3 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 5V | 44 | 10 Weeks | 44 | 4 Mb | yes | 1 | No | 1 | 55mA | e3 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 260 | 5V | 0.8mm | 44 | 10 | 4Mb 256K x 16 | Volatile | 18b | SRAM | Parallel | 16 | 12ns | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT28HC256E-90SU-T | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | CMOS | ASYNCHRONOUS | 2.65mm | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microchiptechnology-at28hc25612su-datasheets-3953.pdf | 28-SOIC (0.295, 7.50mm Width) | 17.9mm | 7.5mm | 28 | 14 Weeks | 1 | YES | 4.5V~5.5V | DUAL | 5V | 1.27mm | 5.5V | 4.5V | R-PDSO-G28 | 256Kb 32K x 8 | Non-Volatile | 90ns | 5V | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS62C51216AL-55TLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | SRAM - Asynchronous | ROHS3 Compliant | /files/issi-is62c51216al55tlitr-datasheets-7710.pdf | 44-TSOP (0.400, 10.16mm Width) | 8 Weeks | 5.5V | 4.5V | 44 | Parallel | 4.5V~5.5V | 44-TSOP II | 8Mb 512K x 16 | Volatile | 55ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1361C-133AXCT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1361c133axi-datasheets-6401.pdf | 100-LQFP | 20mm | 3.3V | Lead Free | 100 | 6 Weeks | 100 | 9 Mb | yes | 4 | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | No | 1 | 250mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3.135V~3.6V | QUAD | 260 | 3.3V | 0.65mm | CY7C1361 | 3.6V | 3.135V | 20 | 9Mb 256K x 36 | Volatile | 3-STATE | 6.5ns | 133MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512S11TFB010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100, GL-S | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2015 | 56-TFSOP (0.724, 18.40mm Width) | 18.4mm | 14mm | 56 | 13 Weeks | 8542.32.00.51 | 1 | YES | 2.7V~3.6V | DUAL | NOT SPECIFIED | 3V | 0.5mm | 3.6V | 2.7V | NOT SPECIFIED | R-PDSO-G56 | 512Mb 32M x 16 | Non-Volatile | 110ns | 3V | FLASH | Parallel | 64MX8 | 8 | 60ns | 536870912 bit | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W972GG8KS25I | Winbond Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/winbondelectronics-w972gg8ks25tr-datasheets-5679.pdf | 60-TFBGA | 9.5mm | 8mm | 60 | 12 Weeks | 1 | EAR99 | AUTO/SELF REFRESH | 1 | YES | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 1.9V | 1.7V | R-PBGA-B60 | 2Gb 256M x 8 | Volatile | 400ps | 400MHz | DRAM | Parallel | 256MX8 | 8 | 15ns | 2147483648 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70FS01GSDSBHI210 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FS-S | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 24-TBGA | 8mm | 6mm | 24 | 13 Weeks | 24 | SPI, Serial | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.71 | 1 | YES | 1.7V~2V | BOTTOM | NOT SPECIFIED | 1.8V | 1mm | 2V | 1.7V | NOT SPECIFIED | 1Gb 128M x 8 | Non-Volatile | 1.8V | 80MHz | FLASH | SPI - Quad I/O | 256MX4 | 4 | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4C128M16D2A-25BINTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR2 | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c128m16d2a25bin-datasheets-4154.pdf | 84-TFBGA | 8 Weeks | unknown | 1.7V~1.9V | NOT SPECIFIED | NOT SPECIFIED | 2Gb 128M x 16 | Volatile | 400MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B512Q1A-SXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | SYNCHRONOUS | 1.727mm | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14e512q1asxi-datasheets-2224.pdf | 8-SOIC (0.154, 3.90mm Width) | 3V | 8 | 8 | SPI, Serial | 512 kb | 3A991.B.2.A | unknown | 1 | 3mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1W | 2.7V~3.6V | DUAL | 260 | 3V | 1.27mm | CY14B512 | 3.6V | 2.7V | 20 | SRAMs | Not Qualified | 512Kb 64K x 8 | Non-Volatile | 8b | 9 ns | 40MHz | NVSRAM | SPI | 8 | 0.00015A | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL01GT12TFM020 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100, GL-T | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s29gl512t10fhi020-datasheets-3832.pdf | 56-TFSOP (0.724, 18.40mm Width) | 18 Weeks | 2.7V~3.6V | 56-TSOP | 1Gb 128M x 8 | Non-Volatile | 120ns | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46R16320D-6TLA2-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 66-TSSOP (0.400, 10.16mm Width) | 22.22mm | 2.5V | 66 | 10 Weeks | 66 | 512 Mb | yes | 1 | AUTO/SELF REFRESH | 1 | 370mA | e3 | MATTE TIN | 2.3V~2.7V | DUAL | 225 | 2.5V | 0.65mm | 2.7V | 2.3V | NOT SPECIFIED | Not Qualified | AEC-Q100 | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 700ps | 166MHz | 15b | DRAM | Parallel | 32MX16 | 16 | 15ns | 0.025A | COMMON | 8192 | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV51216EDBLL-8TLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/issi-is61wv51216edbll8tlitr-datasheets-7703.pdf | 44-TSOP (0.400, 10.16mm Width) | 8 Weeks | 44 | Parallel | 2.4V~3.6V | 44-TSOP II | 8Mb 512K x 16 | Volatile | 8ns | SRAM | Parallel | 8ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62157EV30LL-55ZSXET | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/cypresssemiconductor-cy62157ev30ll55zsxet-datasheets-7704.pdf | 44-TSOP (0.400, 10.16mm Width) | 3V | Lead Free | 44 | 8 Weeks | 48 | 8 Mb | yes | 1 | No | 1 | 35mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 3V | 0.8mm | CY62157 | 3.6V | 2.2V | 30 | R-PDSO-G44 | 8Mb 512K x 16 | Volatile | 3-STATE | 19b | SRAM | Parallel | 16 | 55ns | 0.00003A | 16b | 55 ns | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B128M32D1DS-062 AUT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 4Gb 128M x 32 | Volatile | 1600MHz | DRAM |
