| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Standby Current-Max | Word Size | Endurance | Write Cycle Time-Max (tWC) | Access Time (Max) | Sync/Async | Data Polling | Toggle Bit | Number of Sectors/Size | Sector Size | Ready/Busy | Page Size | I/O Type | Standby Voltage-Min |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 70T651S10BFGI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t651s12bci-datasheets-2894.pdf | 208-LFBGA | 18 Weeks | 2.4V~2.6V | IDT70T651 | 208-FPBGA (15x15) | 9Mb 256K x 36 | Volatile | 10ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7024L70GB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Dual Port, Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7024l15pfg-datasheets-8984.pdf | 84-BPGA | 13 Weeks | 4.5V~5.5V | 64Kb 4K x 16 | Volatile | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70T653MS12BCI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t653ms12bci-datasheets-4692.pdf | 256-LBGA | 13 Weeks | 2.4V~2.6V | IDT70T653M | 256-CABGA (17x17) | 18Mb 512K x 36 | Volatile | 12ns | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1570KV18-450BZXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, DDR II+ | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1568kv18450bzxc-datasheets-6864.pdf | 165-LBGA | 1.8V | 165 | 13 Weeks | 165 | 72 Mb | 1 | PIPELINED ARCHITECTURE | No | 1 | 820mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1.8V | CY7C1570 | 165 | 30 | 72Mb 2M x 36 | Volatile | 3-STATE | 450 ps | 450MHz | 20b | SRAM | Parallel | 2MX36 | 36 | 0.34A | 36b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||||||
| CY7C1620KV18-250BZXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, DDR II | ROHS3 Compliant | 2003 | 165-LBGA | 1.8V | 165 | 13 Weeks | 165 | 144 Mb | 1 | PIPELINED ARCHITECTURE | 1 | 660mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1.8V | CY7C1620 | 40 | Not Qualified | 144Mb 4M x 36 | Volatile | 3-STATE | 450 ps | 250MHz | 22b | SRAM | Parallel | 4MX36 | 36 | 0.37A | 36b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||||||||
| 70T633S10BFI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 4 (72 Hours) | SRAM - Dual Port, Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t633s12bfi-datasheets-2983.pdf | 208-LFBGA | 12 Weeks | 2.4V~2.6V | IDT70T633 | 208-CABGA (15x15) | 9Mb 512K x 18 | Volatile | 10ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT28HC256E-90DM/883 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TC | Tube | 1 (Unlimited) | CMOS | 5.72mm | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microchiptechnology-at28hc25612su-datasheets-3953.pdf | 28-CDIP (0.600, 15.24mm) | 37.215mm | 15.24mm | 5V | Contains Lead | 28 | 23 Weeks | 28 | Parallel, SPI | 256 kb | 3A001.A.2.C | AUTOMATIC WRITE | No | 8542.32.00.51 | 1 | 80mA | e0 | TIN LEAD | 4.5V~5.5V | DUAL | 5V | 2.54mm | AT28HC256 | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 90ns | 5V | EEPROM | Parallel | 32KX8 | 8 | 10ms | 10ms | ||||||||||||||||||||||||||||||||||||||
| 70T3539MS166BCG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Synchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t3539ms133bc-datasheets-4324.pdf | 256-LBGA | 13 Weeks | 2.4V~2.6V | IDT70T3539M | 256-CABGA (17x17) | 18Mb 512K x 36 | Volatile | 3.6ns | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C4021KV13-600FCXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, QDR IV | 2.765mm | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c4021kv13600fcxc-datasheets-3119.pdf | 361-BBGA, FCBGA | 21mm | 21mm | 361 | 21 Weeks | 3A991.B.2.A | 8542.32.00.41 | 1 | YES | 1.1V~1.3V | BOTTOM | NOT SPECIFIED | 1.3V | 1mm | 1.34V | 1.26V | NOT SPECIFIED | S-PBGA-B361 | 72Mb 4M x 18 | Volatile | 600MHz | SRAM | Parallel | 4MX18 | 18 | 75497472 bit | ||||||||||||||||||||||||||||||||||||||||||||||
| 70T3539MS133BCG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Synchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t3539ms133bc-datasheets-4324.pdf | 256-LBGA | 13 Weeks | 2.4V~2.6V | 18Mb 512K x 36 | Volatile | 4.2ns | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT28HC256E-12DM/883 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~125°C TC | Tube | 1 (Unlimited) | CMOS | 120GHz | 5.72mm | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microchiptechnology-at28hc25612su-datasheets-3953.pdf | 28-CDIP (0.600, 15.24mm) | 37.215mm | 15.24mm | 5V | Contains Lead | 28 | 23 Weeks | 28 | Parallel, SPI | 256 kb | 3A001.A.2.C | AUTOMATIC WRITE | No | 8542.32.00.51 | 1 | 80mA | e0 | TIN LEAD | 4.5V~5.5V | DUAL | 5V | 2.54mm | AT28HC256 | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 120ns | 5V | EEPROM | Parallel | 32KX8 | 8 | 10ms | 10ms | |||||||||||||||||||||||||||||||||||||
| CY7C1625KV18-250BZXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, QDR II | 1.4mm | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1612kv18250bzxi-datasheets-7415.pdf | 165-LBGA | 17mm | 1.8V | Lead Free | 165 | 13 Weeks | 165 | 144 Mb | 2 | PIPELINED ARCHITECTURE | No | 1 | 780mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1.8V | 1mm | CY7C1625 | 165 | 1.9V | 1.7V | 40 | 144Mb 16M x 9 | Volatile | 3-STATE | 450 ps | 250MHz | 23b | SRAM | Parallel | 16MX9 | 9 | 0.37A | 9b | Synchronous | SEPARATE | 1.7V | |||||||||||||||||||||||||||||||
| 70T651S10BFI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 4 (72 Hours) | SRAM - Dual Port, Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t651s12bci-datasheets-2894.pdf | 208-LFBGA | 18 Weeks | 2.4V~2.6V | IDT70T651 | 208-CABGA (15x15) | 9Mb 256K x 36 | Volatile | 10ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A4G8KVA-083H:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a4g8kva083hg-datasheets-3086.pdf | 78-TFBGA | 1.14V~1.26V | 32Gb 4G x 8 | Volatile | 1.2GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F4T08EUHAFM4-3T:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 11 Weeks | 2.5V~3.6V | 4Tb 512G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1612KV18-300BZXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, QDR II | 1.4mm | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1612kv18250bzxi-datasheets-7415.pdf | 165-LBGA | 17mm | 1.8V | 165 | 13 Weeks | 165 | 144 Mb | 2 | PIPELINED ARCHITECTURE | No | 1 | 910mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1.8V | 1mm | CY7C1612 | 165 | 1.9V | 1.7V | 40 | 144Mb 8M x 18 | Volatile | 3-STATE | 450 ps | 300MHz | 22b | SRAM | Parallel | 8MX18 | 18 | 0.39A | 18b | Synchronous | SEPARATE | 1.7V | ||||||||||||||||||||||||||||||||
| DS1270AB-100# | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1270y70-datasheets-9022.pdf | 36-DIP Module (0.600, 15.24mm) | 36 | 6 Weeks | yes | 3A991.B.2.A | 5 YEAR DATA RETENTION | not_compliant | 8473.30.11.40 | 1 | NO | 4.75V~5.25V | DUAL | NOT SPECIFIED | 5V | DS1270AB | 36 | 5.25V | 4.75V | NOT SPECIFIED | Not Qualified | R-PDMA-P36 | 16Mb 2M x 8 | Non-Volatile | NVSRAM | Parallel | 2MX8 | 8 | 100ns | 16777216 bit | 100 ns | ||||||||||||||||||||||||||||||||||||||||||
| 70T3539MS133BC8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Synchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t3539ms133bc-datasheets-4324.pdf | 256-LBGA | 13 Weeks | 2.4V~2.6V | IDT70T3539M | 256-CABGA (17x17) | 18Mb 512K x 36 | Volatile | 4.2ns | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1470V33-167AXI | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NoBL™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 2004 | 100-LQFP | 20mm | 3.3V | Lead Free | 100 | 8 Weeks | 100 | 72 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 450mA | e3 | Matte Tin (Sn) | 3.135V~3.6V | QUAD | 260 | 3.3V | 0.65mm | CY7C1470 | 100 | 3.6V | 3.135V | 20 | 72Mb 2M x 36 | Volatile | 3-STATE | 3.4ns | 167MHz | 21b | SRAM | Parallel | 2MX36 | 36 | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||
| 70V25L20PFGI | Renesas Electronics America Inc. | $108.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70v24l20pfgi-datasheets-7607.pdf | 100-LQFP | 16 Weeks | 3V~3.6V | IDT70V25 | 100-TQFP (14x14) | 128Kb 8K x 16 | Volatile | 20ns | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A4G8KVA-083H:G | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a4g8kva083hg-datasheets-3086.pdf | 78-TFBGA | 1.14V~1.26V | 32Gb 4G x 8 | Volatile | 1.2GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70T633S10BCI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t633s12bfi-datasheets-2983.pdf | 256-LBGA | 18 Weeks | 2.4V~2.6V | IDT70T633 | 256-CABGA (17x17) | 9Mb 512K x 18 | Volatile | 10ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT28HC256F-12FM/883 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~125°C TC | Tube | 3 (168 Hours) | CMOS | 120GHz | ASYNCHRONOUS | 3.02mm | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microchiptechnology-at28hc25612su-datasheets-3953.pdf | 28-CFlatPack | 10.16mm | 5V | Contains Lead | 28 | 23 Weeks | 28 | Parallel, SPI | 256 kb | no | AUTOMATIC WRITE | Lead, Tin | 1 | 80mA | e0 | TIN LEAD | 4.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 1.27mm | AT28HC256 | NOT SPECIFIED | 5V | Not Qualified | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 3-STATE | 120ns | 5V | EEPROM | Parallel | 32KX8 | 8 | 3ms | 0.0003A | 10000 Write/Erase Cycles | 3ms | YES | YES | 64words | |||||||||||||||||||||||||||
| MT29F1T08EELCEJ4-R:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70T3519S166BCI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Synchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t3519s133bfi-datasheets-2904.pdf | 256-LBGA | 13 Weeks | 2.4V~2.6V | IDT70T3519 | 9Mb 256K x 36 | Volatile | 3.6ns | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F256G08AUCABH3-10Z:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2014 | 100-LBGA | 3.3V | 100 | 8 Weeks | 100 | Parallel, Serial | 256 Gb | No | 50mA | 2.7V~3.6V | BOTTOM | 1mm | 256Gb 32G x 8 | Non-Volatile | 100MHz | 34b | FLASH | Parallel | 0.00001A | 8b | 20 ns | Asynchronous | NO | NO | 32K | 1M | YES | 8Kwords | |||||||||||||||||||||||||||||||||||||||||||||
| AT28C256F-15DM/883-815 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TC | Tube | 1 (Unlimited) | CMOS | ASYNCHRONOUS | 5.72mm | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microchiptechnology-at28c256e15su-datasheets-4097.pdf | 28-CDIP (0.600, 15.24mm) | 37.215mm | 15.24mm | 28 | 23 Weeks | AUTOMATIC WRITE | 1 | NO | 4.5V~5.5V | DUAL | 5V | 2.54mm | 5.5V | 4.5V | R-GDIP-T28 | MIL-STD-883 Class B | 256Kb 32K x 8 | Non-Volatile | 150ns | 5V | EEPROM | Parallel | 32KX8 | 8 | 3ms | 262144 bit | 3ms | ||||||||||||||||||||||||||||||||||||||||||||
| 70T651S10BCI | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-70t651s12bci-datasheets-2894.pdf | 256-LBGA | 10 Weeks | 2.4V~2.6V | IDT70T651 | 256-CABGA (17x17) | 9Mb 256K x 36 | Volatile | 10ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT28HC256E-12FM/883 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~125°C TC | Tube | 3 (168 Hours) | CMOS | 120GHz | ASYNCHRONOUS | 3.02mm | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microchiptechnology-at28hc25612su-datasheets-3953.pdf | 28-CFlatPack | 10.16mm | 5V | Contains Lead | 28 | 23 Weeks | 28 | Parallel, SPI | 256 kb | no | AUTOMATIC WRITE | Lead, Tin | 1 | 80mA | e0 | TIN LEAD | 4.5V~5.5V | DUAL | NOT SPECIFIED | 5V | 1.27mm | AT28HC256 | NOT SPECIFIED | 5V | Not Qualified | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 3-STATE | 120ns | 5V | EEPROM | Parallel | 32KX8 | 8 | 10ms | 0.0003A | 100000 Write/Erase Cycles | 3ms | YES | YES | 64words | |||||||||||||||||||||||||||
| CY7C1423KV18-300BZXCT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, DDR II | 1.4mm | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1423kv18250bzxc-datasheets-6448.pdf | 165-LBGA | 15mm | 1.8V | 165 | 13 Weeks | 165 | 36 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 460mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1.8V | 1mm | CY7C1423 | 1.9V | 1.7V | 30 | 36Mb 2M x 18 | Volatile | 3-STATE | 450 ps | 300MHz | 20b | SRAM | Parallel | 18 | 18b | Synchronous | SEPARATE | 1.7V |
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