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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode |
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| 71V321L25JG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v321l25tfgi-datasheets-6634.pdf | 52-LCC (J-Lead) | 13 Weeks | 3V~3.6V | IDT71V321 | 52-PLCC (19.13x19.13) | 16Kb 2K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC8GACAENS-AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 153-TFBGA | 6 Weeks | 2.7V~3.6V | 64Gb 8G x 8 | Non-Volatile | 2.7V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1356CV25-166AXC | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NoBL™ | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c1354cv25166axc-datasheets-9396.pdf | 100-LQFP | 2.5V | Lead Free | 100 | 7 Weeks | 100 | 9 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 180mA | e3 | Matte Tin (Sn) | 2.375V~2.625V | QUAD | 260 | 2.5V | 0.65mm | CY7C1356 | 100 | 20 | 9Mb 512K x 18 | Volatile | 3-STATE | 3.5ns | 166MHz | 19b | SRAM | Parallel | 18 | 0.04A | 18b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||
| DS1220AB-100IND+ | Maxim Integrated | $14.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 10.668mm | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/maximintegrated-ds1220ab120-datasheets-7077.pdf | 24-DIP Module (0.600, 15.24mm) | 33.02mm | 15.24mm | 24 | 10 Weeks | yes | EAR99 | not_compliant | 8473.30.11.40 | 1 | e3 | MATTE TIN | NO | 4.75V~5.25V | DUAL | NOT SPECIFIED | 5V | 2.54mm | DS1220A | 24 | 5.25V | 4.75V | NOT SPECIFIED | SRAMs | 5V | 0.085mA | Not Qualified | R-PDMA-P24 | 16Kb 2K x 8 | Non-Volatile | NVSRAM | Parallel | 2KX8 | 8 | 100ns | 16384 bit | 0.01A | 100 ns | |||||||||||||||||||||||||||||||
| IS46TR16128AL-125KBLA2-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR3 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/issiintegratedsiliconsolutioninc-is46tr16128a15hbla1tr-datasheets-2271.pdf | 96-TFBGA | 1.35V | 285mA | 96 | 1.283V~1.45V | 2Gb 128M x 16 | Volatile | 16b | 20ns | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M8SA-062E AAT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Bulk | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 78-TFBGA | 1.14V~1.26V | 4Gb 512M x 8 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT27LV010A-70TI | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | EPROM - OTP | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/microchiptechnology-at27lv010a70ji-datasheets-9018.pdf | 32-TFSOP (0.724, 18.40mm Width) | 3V~3.6V 4.5V~5.5V | AT27LV010 | 1Mb 128K x 8 | Non-Volatile | 70ns | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S16320D-6BLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 54-TFBGA | 13mm | 54 | 6 Weeks | 54 | yes | 1 | AUTO/SELF REFRESH | 1 | e3 | MATTE TIN | YES | 3V~3.6V | BOTTOM | 225 | 3.3V | 0.8mm | 3.6V | 3V | NOT SPECIFIED | 3.3V | 0.25mA | Not Qualified | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 5.4ns | 166MHz | DRAM | Parallel | 32MX16 | 16 | 536870912 bit | 0.004A | COMMON | 8192 | 1248FP | 1248 | |||||||||||||||||||||||||||||||||
| MT40A256M16LY-062E AIT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Bulk | 3 (168 Hours) | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 96-TFBGA | 13.5mm | 7.5mm | 96 | 1 | AUTO/SELF REFRESH | 1 | YES | 1.14V~1.26V | BOTTOM | 1.2V | 0.8mm | 1.26V | 1.14V | R-PBGA-B96 | AEC-Q100 | 4Gb 256M x 16 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 256MX16 | 16 | 15ns | 4294967296 bit | ||||||||||||||||||||||||||||||||||||||||||||||
| MT29F8G08ADBDAH4-AAT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 63-VFBGA | 4 Weeks | 1.7V~1.95V | 8Gb 1G x 8 | Non-Volatile | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14V101QS-SE108XQ | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tube | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | SYNCHRONOUS | 2.667mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14v101qsse108xi-datasheets-9604.pdf | 16-SOIC (0.295, 7.50mm Width) | 10.2865mm | 7.4925mm | 16 | 10 Weeks | SPI, Serial | EAR99 | 8542.32.00.41 | 1 | YES | 2.7V~3.6V | DUAL | NOT SPECIFIED | 3V | 1.27mm | CY14V101 | 3.6V | 2.7V | NOT SPECIFIED | R-PDSO-G16 | 1Mb 128K x 8 | Non-Volatile | 108MHz | NVSRAM | SPI | 128KX8 | 8 | 1048576 bit | ||||||||||||||||||||||||||||||||||||||||||
| MT40A2G4SA-062E:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a2g4we083ebtr-datasheets-5390.pdf | 78-TFBGA | 11mm | 7.5mm | 78 | 1 | AUTO/SELF REFRESH | 1 | YES | 1.14V~1.26V | BOTTOM | 1.2V | 0.8mm | 1.26V | 1.14V | R-PBGA-B78 | 8Gb 2G x 4 | Volatile | 1.6GHz | DRAM | Parallel | 2GX4 | 4 | 8589934592 bit | MULTI BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-053 WT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 8Gb 256M x 32 | Volatile | 1.866GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F8G08ADBDAH4-AAT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 63-VFBGA | 5 Weeks | 1.7V~1.95V | 8Gb 1G x 8 | Non-Volatile | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F128G08CBCEBL05B3WC1-M | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR0A16AMYS35R | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | MRAM (Magnetoresistive RAM) | 55mA | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr0a16acys35-datasheets-4218.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 44 | 10 Weeks | 44 | EAR99 | 8542.32.00.71 | 1 | YES | 600mW | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 44 | 3.6V | 3V | NOT SPECIFIED | AEC-Q100 | 1Mb 64K x 16 | Non-Volatile | 16b | RAM | Parallel | 64KX16 | 16 | 35ns | 1048576 bit | ||||||||||||||||||||||||||||||||||||||||
| IS46TR16256A-125KBLA1-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR3 | ROHS3 Compliant | 96-TFBGA | 1.5V | 290mA | 10 Weeks | 96 | 4 Gb | 230mA | 1.425V~1.575V | 4Gb 256M x 16 | Volatile | 16b | 20ns | 800MHz | 18b | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C10612G30-10ZSXIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy7c10612g3010zsxi-datasheets-5754.pdf | 54-TSOP (0.400, 10.16mm Width) | 22.415mm | 10.16mm | 54 | 13 Weeks | 3A991.B.2.A | 8542.32.00.41 | 1 | YES | 3V~3.6V | DUAL | NOT SPECIFIED | 3.3V | 0.8mm | 3.6V | 3V | NOT SPECIFIED | R-PDSO-G54 | 16Mb 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 10ns | 16777216 bit | 10 ns | ||||||||||||||||||||||||||||||||||||||||||||
| SM662PE8-AC | Silicon Motion, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7132LA20JG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7132la25jgi-datasheets-6947.pdf | 52-LCC (J-Lead) | 13 Weeks | 4.5V~5.5V | IDT7132 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS26KL512S-DABLA300 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100, HyperFlash™ KL | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 24-VBGA | 13 Weeks | 2.7V~3.6V | 512Mb 64M x 8 | Non-Volatile | 96ns | 100MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62168G30-45BVXIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | 1mm | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62168g3045bvxit-datasheets-9884.pdf | 48-VFBGA | 8mm | 6mm | 48 | 13 Weeks | 48 | 3A991.B.2.B | 8542.32.00.41 | 1 | YES | 2.2V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 0.75mm | 3.6V | 2.2V | NOT SPECIFIED | 16Mb 2M x 8 | Volatile | SRAM | Parallel | 2MX8 | 8 | 45ns | 16777216 bit | 45 ns | |||||||||||||||||||||||||||||||||||||||||||
| SM668PE4-AC | Silicon Motion, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B256M32D1PX-062 XT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 8Gb 256M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT27LV520-70SC | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TC | Tube | 1 (Unlimited) | EPROM - OTP | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/microchiptechnology-at27lv52090xc-datasheets-9480.pdf | 20-SOIC (0.295, 7.50mm Width) | 3V~3.6V 4.5V~5.5V | AT27LV520 | 512Kb 64K x 8 | Non-Volatile | 70ns | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC8GACAENS-5M AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 153-TFBGA | 4 Weeks | 2.7V~3.6V | 64Gb 8G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 8Gb 256M x 32 | Volatile | 1.866GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64LPS12832A-200TQLA3 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | Non-RoHS Compliant | 100-LQFP | 20mm | 3.3V | 100 | 12 Weeks | 100 | 4 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 225mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.465V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.135V | 40 | 4Mb 128K x 32 | Volatile | 3-STATE | 3.1ns | 200MHz | 17b | SRAM | Parallel | 128KX32 | 32 | 0.09A | 32b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||
| 71V65703S75PFG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v65903s85pfg8-datasheets-2225.pdf | 100-LQFP | 13 Weeks | 3.135V~3.465V | IDT71V65703 | 9Mb 256K x 36 | Volatile | 7.5ns | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32160F-6TLI | ISSI, Integrated Silicon Solution Inc | $11.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 86-TFSOP (0.400, 10.16mm Width) | 13mm | 8mm | 90 | 8 Weeks | 86 | 1 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 8542.32.00.28 | 1 | YES | 3V~3.6V | BOTTOM | 3.3V | 0.8mm | 3.6V | 3V | 3.3V | 0.245mA | Not Qualified | R-PBGA-B90 | 512Mb 16M x 32 | Volatile | 3-STATE | 5.4ns | 167MHz | DRAM | Parallel | 16MX32 | 32 | 536870912 bit | 0.004A | COMMON | 8192 | 1248FP | 1248 |
