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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Max Supply Current | Number of Terminations | Factory Lead Time | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Alternate Memory Width | Standby Current-Max | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Access Time (Max) | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Sector Size | Ready/Busy | Boot Block | Common Flash Interface | Page Size | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Memory IC Type | Access Mode | Mixed Memory Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT29F64G08CBABAWP-M:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 2.7V~3.6V | 64Gb 8G x 8 | Non-Volatile | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT25QU01GBBB1EW9-0SIT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt25qu01gbbb8e120sittr-datasheets-4303.pdf | 8-WFDFN Exposed Pad | 6 Weeks | 1.7V~2V | 1Gb 128M x 8 | Non-Volatile | 133MHz | FLASH | SPI | 8ms, 2.8ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S79FL512SDSMFVG00 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FL-S | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 2.65mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s79fl256sdsmfvg03-datasheets-5297.pdf | 16-SOIC (0.295, 7.50mm Width) | 10.3mm | 7.5mm | 16 | 13 Weeks | 8542.32.00.51 | 1 | YES | 2.7V~3.6V | DUAL | NOT SPECIFIED | 3V | 1.27mm | 3.6V | 2.7V | NOT SPECIFIED | R-PDSO-G16 | 512Mb 64M x 8 | Non-Volatile | 3V | 80MHz | FLASH | SPI - Quad I/O | 64MX8 | 8 | 536870912 bit | SERIAL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43R16320D-5BLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 60-TFBGA | 13mm | 60 | 8 Weeks | 60 | yes | 1 | AUTO/SELF REFRESH | 1 | e3 | MATTE TIN | YES | 2.5V~2.7V | BOTTOM | 225 | 2.6V | 1mm | 2.7V | 2.5V | NOT SPECIFIED | 2.6V | 0.43mA | Not Qualified | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 700ps | 200MHz | DRAM | Parallel | 32MX16 | 16 | 15ns | 536870912 bit | 0.025A | COMMON | 8192 | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512S12TFVV20 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GL-S | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s29gl512s11dhiv23-datasheets-8275.pdf | 56-TFSOP (0.724, 18.40mm Width) | 18.4mm | 14mm | 56 | 13 Weeks | 8542.32.00.51 | 1 | YES | 1.65V~3.6V | DUAL | 3V | 0.5mm | 3.6V | 2.7V | 1.8/3.33/3.3V | 0.08mA | Not Qualified | R-PDSO-G56 | 512Mb 32M x 16 | Non-Volatile | 120ns | 2.7V | FLASH | Parallel | 32MX16 | 16 | 60ns | 536870912 bit | 0.0002A | YES | YES | YES | 512 | 64K | YES | BOTTOM/TOP | YES | 16words | ||||||||||||||||||||||||||||||||||||||||||||||
| AS4C128M16D2A-25BCNTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR2 | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c128m16d2a25bin-datasheets-4154.pdf | 84-TFBGA | 8 Weeks | 1.7V~1.9V | NOT SPECIFIED | NOT SPECIFIED | 2Gb 128M x 16 | Volatile | 400MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FS512SAGNFV011 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FS-S | Surface Mount | -40°C~105°C TA | Tube | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s25fs512sdsbhv210-datasheets-4631.pdf | 8-WDFN Exposed Pad | 8mm | 6mm | 8 | 13 Weeks | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1 | YES | 1.7V~2V | DUAL | NOT SPECIFIED | 1.8V | 1.27mm | 2V | 1.7V | NOT SPECIFIED | R-PDSO-N8 | 512Mb 64M x 8 | Non-Volatile | 1.8V | 133MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | SERIAL | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V3556SA166BGGI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR (ZBT) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v3558s100pfg8-datasheets-2614.pdf | 119-BGA | 8 Weeks | 3.135V~3.465V | IDT71V3556 | 119-PBGA (14x22) | 4.5Mb 128K x 36 | Volatile | 3.5ns | 166MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43R86400D-5BLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 60-TFBGA | 13mm | 430mA | 60 | 8 Weeks | 60 | yes | 1 | AUTO/SELF REFRESH | 1 | e3 | MATTE TIN | YES | 2.5V~2.7V | BOTTOM | 225 | 2.6V | 1mm | 2.7V | 2.5V | NOT SPECIFIED | 2.6V | Not Qualified | 512Mb 64M x 8 | Volatile | 8b | 3-STATE | 700ps | 200MHz | DRAM | Parallel | 64MX8 | 8 | 15ns | 536870912 bit | 0.025A | COMMON | 8192 | 248 | 248 | |||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR81280B-25DBLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 60-TFBGA | 10.5mm | 1.8V | 60 | 8 Weeks | 60 | 1 Gb | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.32 | 1 | 240mA | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 1.9V | 1.7V | Not Qualified | 1Gb 128M x 8 | Volatile | 8b | 3-STATE | 400ps | 400MHz | 17b | DRAM | Parallel | 128MX8 | 8 | 15ns | COMMON | 8192 | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43LD32640B-25BL-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR2-S4 | SYNCHRONOUS | 1.1mm | ROHS3 Compliant | 134-TFBGA | 11.5mm | 10mm | 134 | 14 Weeks | 1 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.14V~1.95V | BOTTOM | NOT SPECIFIED | 1.2V | 0.65mm | 1.3V | 1.14V | NOT SPECIFIED | R-PBGA-B134 | 2Gb 64M x 32 | Volatile | 400MHz | DRAM | Parallel | 64MX32 | 32 | 15ns | 2147483648 bit | MULTI BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46DR16640B-25DBLA1-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR2 | ROHS3 Compliant | 84-TFBGA | 84 | 8 Weeks | 84 | YES | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 1.8V | 0.27mA | Not Qualified | AEC-Q100 | 1Gb 64M x 16 | Volatile | 16b | 3-STATE | 400ps | 400MHz | DRAM | Parallel | 64MX16 | 16 | 15ns | 1073741824 bit | 0.015A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX63U2GE2GHAXMI01 | Macronix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | CMOS | SYNCHRONOUS | 1mm | https://pdf.utmel.com/r/datasheets/macronix-mx63u4gc2ghaxmi00-datasheets-4629.pdf | 10.5mm | 8mm | 162 | 12 Weeks | IT ALSO CONTAINS 2GBIT(64M X 32) DDR2 MEMORY OPERATES AT 1.8V AND 1.2V NOM SUPPLY | 8542.32.00.71 | 1 | YES | BOTTOM | BALL | 1.8V | 0.5mm | INDUSTRIAL | 85°C | -40°C | 1.95V | 1.7V | R-PBGA-B162 | 256MX8 | 8 | 2147483648 bit | MEMORY CIRCUIT | FLASH+DDR2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS62WV102416GBLL-45TLI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 18.4mm | 12mm | 48 | 8 Weeks | 1 | YES | 2.2V~3.6V | DUAL | NOT SPECIFIED | 3V | 0.5mm | 3.6V | 2.2V | NOT SPECIFIED | R-PDSO-G48 | 16Mb 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 45ns | 16777216 bit | 45 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX63U2GE2GHAXMI00 | Macronix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | CMOS | SYNCHRONOUS | 1mm | https://pdf.utmel.com/r/datasheets/macronix-mx63u4gc2ghaxmi00-datasheets-4629.pdf | 10.5mm | 8mm | 162 | 12 Weeks | IT ALSO CONTAINS 2GBIT(64M X 32) DDR2 MEMORY OPERATES AT 1.8V AND 1.2V NOM SUPPLY | 8542.32.00.71 | 1 | YES | BOTTOM | BALL | 1.8V | 0.5mm | OTHER | 85°C | -30°C | 1.95V | 1.7V | R-PBGA-B162 | 256MX8 | 8 | 2147483648 bit | MEMORY CIRCUIT | FLASH+DDR2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E128M32D2DS-053 AIT:A TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 4Gb 128M x 32 | Volatile | 1.866GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43TR82560C-15HBLI | ISSI, Integrated Silicon Solution Inc | $11.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 78-TFBGA | 10.5mm | 8mm | 78 | 8 Weeks | 1 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.425V~1.575V | BOTTOM | 260 | 1.5V | 0.8mm | 1.575V | 1.425V | 10 | R-PBGA-B78 | 2Gb 256M x 8 | Volatile | 20ns | 667MHz | DRAM | Parallel | 256MX8 | 8 | 15ns | 2147483648 bit | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LP6432A-133TQ-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 2 (1 Year) | SRAM - Synchronous, SDR | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/issi-is61lp6432a133tqtr-datasheets-9446.pdf | 100-LQFP | 100 | 3.135V~3.6V | 2Mb 64K x 32 | Volatile | 4ns | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV51216EEBLL-10TLI | ISSI, Integrated Silicon Solution Inc | $7.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 10.16mm | 44 | 8 Weeks | 8542.32.00.41 | 1 | YES | 2.4V~3.6V | DUAL | NOT SPECIFIED | 3V | 0.8mm | 3.6V | 2.4V | NOT SPECIFIED | R-PDSO-G44 | 8Mb 512K x 16 | Volatile | SRAM | Parallel | 512KX16 | 16 | 10ns | 8388608 bit | 10 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDB4432BBBJ-1D-F-D | Micron Technology Inc. | $76.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.75mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb4432bbbj1daatfrtr-datasheets-2650.pdf | 134-WFBGA | 11.5mm | 10mm | 134 | 8 Weeks | 1 | EAR99 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | 1 | YES | 1.14V~1.95V | BOTTOM | 1.2V | 0.65mm | 1.3V | 1.14V | R-PBGA-B134 | 4Gb 128M x 32 | Volatile | 533MHz | DRAM | Parallel | 128MX32 | 32 | 4294967296 bit | SINGLE BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46DR16320C-3DBLA1 | ISSI, Integrated Silicon Solution Inc | $7.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 84-TFBGA | 12.5mm | 1.8V | 84 | 8 Weeks | 84 | 512 Mb | 1 | AUTO/SELF REFRESH | 1 | 250mA | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 1.9V | 1.7V | Not Qualified | AEC-Q100 | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 450ps | 333MHz | 15b | DRAM | Parallel | 32MX16 | 16 | 15ns | 0.011A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||
| S25FS512SDSNFV011 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FS-S | Surface Mount | -40°C~105°C TA | Tube | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s25fs512sdsbhv210-datasheets-4631.pdf | 8-WDFN Exposed Pad | 8mm | 6mm | 8 | 13 Weeks | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1 | YES | 1.7V~2V | DUAL | NOT SPECIFIED | 1.8V | 1.27mm | 2V | 1.7V | NOT SPECIFIED | R-PDSO-N8 | 512Mb 64M x 8 | Non-Volatile | 1.8V | 80MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | SERIAL | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4C256M16D3LB-12BINTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR3L | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c256m16d3lb12bin-datasheets-4938.pdf | 96-TFBGA | 8 Weeks | 1.283V~1.45V | 4Gb 256M x 16 | Volatile | 20ns | 800MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FS512SDSMFV011 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FS-S | Surface Mount | -40°C~105°C TA | Tube | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 2.65mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s25fs512sdsbhv210-datasheets-4631.pdf | 16-SOIC (0.295, 7.50mm Width) | 10.3mm | 7.5mm | 16 | 13 Weeks | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1 | YES | 1.7V~2V | DUAL | NOT SPECIFIED | 1.8V | 1.27mm | 2V | 1.7V | NOT SPECIFIED | R-PDSO-G16 | 512Mb 64M x 8 | Non-Volatile | 1.8V | 80MHz | FLASH | SPI - Quad I/O, QPI | 128MX4 | 4 | 536870912 bit | SERIAL | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT93C56W-10SI-2.5 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microchiptechnology-at93c4610pc-datasheets-1803.pdf | 8-SOIC (0.154, 3.90mm Width) | 2.5V~5.5V | AT93C56 | 2Kb 256 x 8 128 x 16 | Non-Volatile | 2MHz | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V3579S65PFG | Renesas Electronics America Inc. | $10.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v3577s75pfg8-datasheets-9977.pdf | 100-LQFP | 13 Weeks | 3.135V~3.465V | IDT71V3579 | 4.5Mb 256K x 18 | Volatile | 6.5ns | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43LR16320B-6BL | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1.1mm | ROHS3 Compliant | 60-TFBGA | 10mm | 1.8V | 60 | 14 Weeks | 60 | 512 Mb | yes | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | 1 | 110mA | e1 | TIN SILVER COPPER | 1.7V~1.95V | BOTTOM | 260 | 1.8V | 0.8mm | 60 | 1.95V | 1.7V | 40 | Not Qualified | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 5.5ns | 166MHz | 15b | DRAM | Parallel | 32MX16 | 16 | 12ns | 0.00001A | COMMON | 8192 | 24816 | 24816 | |||||||||||||||||||||||||||||||||||||||||||
| S25FL512SDPMFV011 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FL-S | Surface Mount | -40°C~105°C TA | Tube | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 2.65mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s25fl512sdpmfig11-datasheets-8168.pdf | 16-SOIC (0.295, 7.50mm Width) | 10.3mm | 7.5mm | 16 | 13 Weeks | SPI, Serial | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1 | YES | 2.7V~3.6V | DUAL | 3V | 1.27mm | 3.6V | 2.7V | 3/3.3V | 0.075mA | Not Qualified | R-PDSO-G16 | 512Mb 64M x 8 | Non-Volatile | 3V | 66MHz | FLASH | SPI - Quad I/O | 64MX8 | 8 | 512753664 bit | 1 | 0.0003A | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | |||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F32G08CBACAL73A3WC1P | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Bulk | 3 (168 Hours) | 70°C | 0°C | FLASH - NAND | ROHS3 Compliant | Die | 6 Weeks | Parallel | 2.7V~3.6V | Die | 32Gb 4G x 8 | Non-Volatile | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL512SAGMFVG11 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FL-S | Surface Mount | -40°C~105°C TA | Tube | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 2.65mm | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s25fl512sdpmfig11-datasheets-8168.pdf | 16-SOIC (0.295, 7.50mm Width) | 10.3mm | 7.5mm | 16 | 13 Weeks | SPI, Serial | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | YES | 2.7V~3.6V | DUAL | 3V | 1.27mm | 3.6V | 2.7V | 3/3.3V | 0.061mA | Not Qualified | R-PDSO-G16 | 512Mb 64M x 8 | Non-Volatile | 3V | 133MHz | FLASH | SPI - Quad I/O | 64MX8 | 8 | 512753664 bit | 1 | 0.0001A | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE |
