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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-1N1187A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1187 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 1.3V | 800A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 300V | 300V | Standard | 300V | 40A | 1 | 2.5mA @ 300V | 1.3V @ 126A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||
| VS-25F100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 25A | 900mV | 373A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 373A | 12mA | 1kV | 373A | 1kV | Standard | 1kV | 25A | 1 | 1000V | 12mA @ 1000V | 1.3V @ 78A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| MBR1635-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-2 | Lead Free | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | MBR1635 | 3 | Single | 30 | 1 | Rectifier Diodes | 16A | 630mV | 150A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 35V | 150A | Schottky | 35V | 16A | 1 | 200μA @ 35V | 630mV @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| MBRD320G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-mbrd340rlg-datasheets-3980.pdf | 20V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | No | Standard | Halogen Free | MBRD320 | Single | DPAK | 3A | 3A | 600mV | 75A | 200μA | 20V | Fast Recovery =< 500ns, > 200mA (Io) | 75A | 200μA | 20V | 75A | Schottky | 20V | 3A | 20V | 200μA @ 20V | 600mV @ 3A | 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| RFNL10TJ6SGC9 | ROHM Semiconductor | $1.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 12 Weeks | yes | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | Standard | 600V | 10A | 600V | 10μA @ 600V | 1.3V @ 10A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFU20TM5S | ROHM Semiconductor | $1.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-3 Full Pack | Lead Free | 2 | 3 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 20A | 1.65V | 100A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 530V | 100A | TO-220AC | 30 ns | 23 ns | Standard | 530V | 20A | 1 | 10μA @ 530V | 2V @ 20A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| APT30DQ100BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt30dq100bg-datasheets-2860.pdf | 1kV | 30A | TO-247-2 | Lead Free | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 30A | 3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 150A | 295 ns | Standard | 1kV | 30A | 1 | 1000V | 100μA @ 1000V | 3V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| RFU5TF6S | ROHM Semiconductor | $1.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | 2 | Single | 1 | Rectifier Diodes | 5A | 2.2V | 60A | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20nA | 600V | 60A | 25 ns | 15 ns | Standard | 600V | 5A | 1 | 5A | 10μA @ 600V | 2.8V @ 5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| S12B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-s12b-datasheets-9343.pdf | DO-203AA, DO-4, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 280A | SINGLE | CATHODE | GENERAL PURPOSE | 2.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard | 100V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRF10H100-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-220-2 Full Pack, Isolated Tab | 10.4394mm | 9.144mm | 4.826mm | 2 | 22 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 880mV | 250A | 4.5μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250A | 4.5μA | 100V | 250A | Schottky | 100V | 10A | 1 | 4.5μA @ 100V | 770mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| TST10L60CW C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tst10l60cwc0g-datasheets-2808.pdf | TO-220-3 | 14 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 200μA @ 60V | 650mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TST20L200CW C0G | Taiwan Semiconductor Corporation | $2.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tst20l120cwc0g-datasheets-2752.pdf | TO-220-3 | 14 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 100μA @ 200V | 990mV @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-C4PU3006L-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Tube | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsc4pu3006ln3-datasheets-2814.pdf | TO-247-3 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | Standard | 600V | 15μA @ 600V | 1.55V @ 15A | 15A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETU3006-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vsetu3006m3-datasheets-2817.pdf | TO-220-2 | 10.41mm | 15.49mm | 4.57mm | 2 | 14 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 30A | 2V | 200A | CATHODE | UFSRHP | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 20nA | 600V | 200A | 600V | 45 ns | 45 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| SDUR6040W | SMC Diode Solutions | $2.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-247-2 | 17 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | Standard | 400V | 10μA @ 400V | 1.47V @ 60A | 60A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-EPH3006LHN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | Tube | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vseph3006lhn3-datasheets-2822.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | Standard | 600V | 30μA @ 600V | 2.65V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30DQ60KG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | RoHS Compliant | 1997 | /files/microsemicorporation-apt30dq60kg-datasheets-2770.pdf&product=microsemicorporation-apt30dq60kg-5988735 | 600V | 30A | TO-220-2 | 10.26mm | 9.19mm | 4.72mm | Lead Free | 2 | 27 Weeks | 6.000006g | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | EAR99 | Tin | No | 8541.10.00.80 | APT30DQ60 | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 30A | 2V | 320A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 320A | 30 ns | 19 ns | Standard | 600V | 30A | 1 | 600V | 25μA @ 600V | 2.4V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| TST30U60C C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tst30u60cc0g-datasheets-2827.pdf | TO-220-3 | 20 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 570mV @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TST30L45CW C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 500μA | TO-220AB | Schottky | 180A | 1 | 15A | 45V | 500μA @ 45V | 550mV @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SDUR6060W | SMC Diode Solutions | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-247-2 | 17 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 100μA @ 600V | 2V @ 60A | 60A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TST30L100CW C0G | Taiwan Semiconductor Corporation | $2.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tst30l150cwc0g-datasheets-4288.pdf | TO-220-3 | 14 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 200μA @ 100V | 820mV @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RHRP1560-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | ROHS3 Compliant | /files/onsemiconductor-rhrp1560-datasheets-8126.pdf | TO-220-2 | 2 | 8 Weeks | 2.16g | ACTIVE (Last Updated: 1 week ago) | yes | FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE | Single | 1 | R-PSFM-T2 | CATHODE | HYPER ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON NITRIDE | 100W | 200A | 600V | 100μA | TO-220AC | 40ns | Standard | 1 | 15A | 100μA @ 600V | 2.1V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-5EWX06FN-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs5ewx06fnm3-datasheets-2779.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | Unknown | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | GULL WING | NOT SPECIFIED | 5EWX06 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5A | 1.55V | 50A | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 20μA | 600V | 50A | TO-252AA | 21 ns | 18 ns | Standard | 600V | 5A | 1 | 5A | 600V | 20μA @ 600V | 2.9V @ 5A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| RHRP860-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | ROHS3 Compliant | /files/onsemiconductor-rhrp860f085-datasheets-2782.pdf | TO-220-2 | 2 | 4 Weeks | 2.16g | 2 | yes | FREE WHEELING DIODE, PD-CASE | No | e3 | Tin (Sn) | Single | 1 | Rectifier Diodes | 8A | 100A | CATHODE | HYPERFAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON NITRIDE | 75W | 100A | 100μA | 600V | 100A | 600V | 35 ns | Standard | 600V | 8A | 1 | 8A | 100μA @ 600V | 2.1V @ 8A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| IDP15E65D1XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-idp15e65d1xksa1-datasheets-2790.pdf | TO-220-2 | Lead Free | 2 | 16 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, PD-CASE, SOFT FACTOR IS 1 | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 15A | 1.35V | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120A | 650V | 120A | 40μA | 71 ns | Standard | 650V | 15A | 1 | 30A | 40μA @ 650V | 1.7V @ 15A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| STTH8S06FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth8s06d-datasheets-4357.pdf | TO-220-2 Full Pack | 2 | 15 Weeks | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | STTH8S06 | 3 | Single | 1 | Rectifier Diodes | 8A | 60A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 60A | 600V | 18 ns | 18 ns | Standard | 600V | 8A | 1 | 8A | 20μA @ 600V | 3.4V @ 8A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| SDUR1060 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | TO-220-2 | 17 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | Standard | 600V | 10μA @ 600V | 2.2V @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TST30L60CW C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | 14 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 600mV @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFF1008G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff1006gc0g-datasheets-9885.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 50pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FES8BT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 10.54mm | 15.32mm | 4.7mm | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 950mV | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 125A | 100V | 35 ns | 35 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 950mV @ 8A | -55°C~150°C |
