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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| CEFB203-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | /files/comchiptechnology-cefb203g-datasheets-3353.pdf | DO-214AA, SMB | EAR99 | 8541.10.00.80 | CEFB203 | 150°C | 1 | Rectifier Diodes | 35A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 200V | 25 ns | 25 ns | Standard | 200V | 2A | 2A | 5μA @ 200V | 875mV @ 2A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB1045HE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 100μA | Schottky | 150A | 1 | 10A | 45V | 100μA @ 45V | 840mV @ 20A | 10A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SE20DG-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se20djm3i-datasheets-3136.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 25μA | TO-263AC | 3 μs | Standard | 400V | 3.9A | 150A | 1 | 150pF @ 4V 1MHz | 400V | 25μA @ 400V | 1.2V @ 20A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-8TQ080-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq100m3-datasheets-7385.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 500pF @ 5V 1MHz | 80V | 550μA @ 80V | 880mV @ 16A | 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRF1645HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbrf1645hc0g-datasheets-3334.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 500μA @ 45V | 630mV @ 16A | 16A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF2005G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf2004gc0g-datasheets-3232.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 80pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.3V @ 10A | 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4PGHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | Common Anode | 30 | 1 | 4A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 100A | TO-277A | 1.8 μs | Avalanche | 400V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 400V | 1.1V @ 4A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| SF1606G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf1604gc0g-datasheets-2912.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 8A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF2006G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf2004gc0g-datasheets-3232.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 80pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 10A | 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SL42-9C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sl44e357t-datasheets-5192.pdf | 20V | 4A | DO-214AB, SMC | Contains Lead | 49 Weeks | Standard | SL42 | DO-214AB (SMC) | 4A | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 4A | 20V | 500μA @ 20V | 420mV @ 4A | 4A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4PJHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | Common Anode | 30 | 1 | 4A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 100A | TO-277A | 1.8 μs | Avalanche | 600V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 600V | 1.1V @ 4A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| SFF1608G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff1606gc0g-datasheets-9937.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 50pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 8A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB2W40900L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2014 | /files/panasonicelectroniccomponents-db2w40900l-datasheets-3302.pdf | SOD-123F | 2 | 10 Weeks | No SVHC | 2 | EAR99 | unknown | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | DB2W409 | 2 | Single | NOT SPECIFIED | 1 | 3A | 550mV | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 200μA | 40V | 25 ns | Schottky | 40V | 3A | 1 | 3A | 70pF @ 10V 1MHz | 200μA @ 40V | 550mV @ 3A | 150°C Max | ||||||||||||||||||||||||||||||||||||
| DTV56L-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 15 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 135 ns | Standard | 1.5kV | 10A | 1500V | 100μA @ 1500V | 1.8V @ 6A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4PDHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | Common Anode | 30 | 1 | 4A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | TO-277A | 1.8 μs | Avalanche | 200V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 200V | 1.1V @ 4A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| DMA10IM1200UZ-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100W | 1200V | 10μA | TO-252AA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1200V | 10μA @ 1200V | 1.26V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| MBR1690HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1660c0g-datasheets-2557.pdf | TO-220-2 | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 300μA @ 90V | 850mV @ 16A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SRAS8100HMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sras8100mng-datasheets-3156.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 950mV @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVUD340T4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-murd340t4g-datasheets-2138.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 5μA | 50ns | Standard | 75A | 1 | 3A | 400V | 5μA @ 400V | 1.15V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| SFF2006G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff2005gc0g-datasheets-6844.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 90pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 10A | 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VI10150S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v10150se34w-datasheets-6897.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 10A | 120A | 150μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 150V | 120A | Schottky | 150V | 10A | 1 | 150μA @ 150V | 1.2V @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| AS4PKHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | Common Anode | 30 | 1 | 4A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 100A | TO-277A | 1.8 μs | Avalanche | 800V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 800V | 1.1V @ 4A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-6TQ040S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs6tq045sm3-datasheets-3420.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 175°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | Schottky | 40V | 6A | 140A | 1 | 400pF @ 5V 1MHz | 40V | 800μA @ 40V | 600mV @ 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| NRVB1045MFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/onsemiconductor-mbr1045mfst1g-datasheets-0696.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 Weeks | ACTIVE (Last Updated: 2 weeks ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-F5 | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 45V | 150A | Schottky | 45V | 10A | 1 | 500μA @ 45V | 750mV @ 20A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| MBRB760HE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 500μA | Schottky | 150A | 1 | 7.5A | 60V | 500μA @ 60V | 750mV @ 7.5A | 7.5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| NGTD8R65F2WP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ngtd8r65f2wp-datasheets-3268.pdf | Die | Lead Free | 1 | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | FREE WHEELING DIODE | YES | UPPER | NO LEAD | 175°C | 1 | S-XUUC-N1 | SINGLE | FAST RECOVERY | SILICON | 650V | 1μA | Standard | 1 | 650V | 1μA @ 650V | 2.8V @ 30A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SD125SC200B.T2 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 300pF @ 5V 1MHz | 200V | 350μA @ 200V | 920mV @ 15A | 15A | -55°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBRB735-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vsmbrb735m3-datasheets-3271.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | 7.5A | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Schottky | 35V | 7.5A | 1 | 400pF @ 5V 1MHz | 100μA @ 35V | 570mV @ 7.5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| 5817SMJ/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-5819smje3tr13-datasheets-4081.pdf | DO-214AA, SMB | Lead Free | 2 | 22 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | No | 8541.10.00.80 | DUAL | C BEND | 5817SM | Single | 1 | 1A | 650mV | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 20V | 50A | Schottky | 20V | 1A | 1A | 1mA @ 20V | 450mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| MBRB1060HE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | FREE WHEELING DIODE, LOW POWER LOSS | unknown | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 100μA | Schottky | 150A | 1 | 10A | 60V | 100μA @ 60V | 800mV @ 10A | 10A | -65°C~150°C |
