Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Pbfree Code | ECCN Code | Additional Feature | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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UGB15JTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50ns | Standard | 135A | 1 | 15A | 600V | 30μA @ 600V | 1.75V @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||
UG58GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 600V | 30μA @ 600V | 2.1V @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
UGB8JCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 245 | 3 | 150°C | 30 | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50ns | Standard | 65A | 1 | 8A | 600V | 30μA @ 600V | 1.75V @ 4A | 8A | -55°C~150°C | ||||||||||||||||||||||||||
GPA803 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
GPA802HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
UGB8HCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 245 | 3 | 150°C | 30 | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 65A | 1 | 8A | 500V | 30μA @ 500V | 1.75V @ 4A | 8A | -55°C~150°C | ||||||||||||||||||||||||||
UG56GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 400V | 10μA @ 400V | 1.55V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
GPA804 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
CTLSH1-40M322S BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctlsh140m322sbk-datasheets-2907.pdf | 3-TDFN Exposed Pad | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | Schottky | 50pF @ 4V 1MHz | 40V | 200μA @ 40V | 1A DC | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
GPA804HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
GPA802 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
UGB15HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 135A | 1 | 15A | 500V | 30μA @ 500V | 1.75V @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||
GPA801 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
GPA801HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
UGB15JT-E3H/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 30μA @ 600V | 1.75V @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
GPA803HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
TY056S200S6OT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 150°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60μA | Schottky | 1 | 200V | 60μA @ 200V | 1.2V @ 3A | 3A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
BAT43 R0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 5ns | Schottky | 7pF @ 1V 1MHz | 30V | 500nA @ 25V | 1V @ 200mA | 200mA | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
SX070H150S6KW-01 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SB360L-003E3/72 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 680mV @ 3A | 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SX061H100S4PT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | HIGH RELIABILITY | 8541.10.00.40 | YES | UPPER | NO LEAD | 175°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | Schottky | 1 | 100V | 10μA @ 100V | 790mV @ 2A | 2A DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
APD245VGTR-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-apd245vgtre1-datasheets-2527.pdf | DO-204AC, DO-15, Axial | DO-15 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 500μA @ 45V | 500mV @ 2A | 2A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
SX128H060S4OV | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 175°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Schottky | 1 | 60V | 100μA @ 60V | 6.9V @ 20A | 20A DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
UGB15HTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 135A | 1 | 15A | 500V | 30μA @ 500V | 1.75V @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||
UGB15JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50ns | Standard | 135A | 1 | 15A | 600V | 30μA @ 600V | 1.75V @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||
UGB15HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 3 | 150°C | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 135A | 1 | 15A | 500V | 30μA @ 500V | 1.75V @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||
V10WL45-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-v10wl45m3i-datasheets-2820.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 379.997008mg | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 10 | 1 | R-PSSO-G2 | 10A | 490mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 1.7mA | 45V | 100A | TO-252AA | Schottky | 45V | 10A | 1 | 1.7mA @ 45V | 570mV @ 10A | -40°C~150°C | ||||||||||||||||||||
38DN68S02ELEMXPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TY080S200A6OU | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 150°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | Schottky | 1 | 200V | 150μA @ 200V | 1.7V @ 10A | 10A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
TY066S200A6OT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 150°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | Schottky | 1 | 200V | 150μA @ 200V | 1.6V @ 5A | 5A DC | -40°C~150°C |
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