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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| UGB15HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 135A | 1 | 15A | 500V | 30μA @ 500V | 1.75V @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||
| GPA801 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GPA801HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB15JT-E3H/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 30μA @ 600V | 1.75V @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GPA803HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TY056S200S6OT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 150°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60μA | Schottky | 1 | 200V | 60μA @ 200V | 1.2V @ 3A | 3A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| BAT43 R0 | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 5ns | Schottky | 7pF @ 1V 1MHz | 30V | 500nA @ 25V | 1V @ 200mA | 200mA | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB15JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50ns | Standard | 135A | 1 | 15A | 600V | 30μA @ 600V | 1.75V @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||
| UG54GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 200V | 10μA @ 200V | 1.05V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB15JTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT APPLICABLE | 3 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50ns | Standard | 135A | 1 | 15A | 600V | 30μA @ 600V | 1.75V @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||
| UG58GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 600V | 30μA @ 600V | 2.1V @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB8JCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 245 | 3 | 150°C | 30 | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50ns | Standard | 65A | 1 | 8A | 600V | 30μA @ 600V | 1.75V @ 4A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||
| GPA803 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GPA802HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB8HCT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 245 | 3 | 150°C | 30 | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 65A | 1 | 8A | 500V | 30μA @ 500V | 1.75V @ 4A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||
| UG56GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ug54gr0g-datasheets-5048.pdf | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 400V | 10μA @ 400V | 1.55V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GPA804 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpa805c0g-datasheets-0285.pdf | TO-220-2 | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CTLSH1-40M322S BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctlsh140m322sbk-datasheets-2907.pdf | 3-TDFN Exposed Pad | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | Schottky | 50pF @ 4V 1MHz | 40V | 200μA @ 40V | 1A DC | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V10WL45-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-v10wl45m3i-datasheets-2820.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 379.997008mg | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 10 | 1 | R-PSSO-G2 | 10A | 490mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 1.7mA | 45V | 100A | TO-252AA | Schottky | 45V | 10A | 1 | 1.7mA @ 45V | 570mV @ 10A | -40°C~150°C | ||||||||||||||||||||||
| 38DN68S02ELEMXPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TY080S200A6OU | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 150°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | Schottky | 1 | 200V | 150μA @ 200V | 1.7V @ 10A | 10A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| TY066S200A6OT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 150°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | Schottky | 1 | 200V | 150μA @ 200V | 1.6V @ 5A | 5A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| BAT43-L0 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 5ns | Schottky | 7pF @ 1V 1MHz | 30V | 500nA @ 25V | 1V @ 200mA | 200mA | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TY054S200S6OT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 150°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | Schottky | 1 | 200V | 50μA @ 200V | 1.4V @ 3A | 3A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| GS1DE-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-gs1getp-datasheets-0009.pdf | DO-214AC, SMA | 2 | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | SINGLE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 1.1V | 2μs | Standard | 30A | 1A | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1A | -55°C~150°C | ||||||||||||||||||||||||||||
| TY093S200A6OU | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 1 | EAR99 | 8541.10.00.40 | YES | UPPER | NO LEAD | 150°C | 1 | S-XUUC-N1 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | Schottky | 1 | 200V | 150μA @ 200V | 1.6V @ 10A | 10A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| D1821SH45TS05XOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/infineontechnologies-d1821sh45ts05xosa1-datasheets-2892.pdf | DO-200AE | Standard Recovery >500ns, > 200mA (Io) | Standard | 4500V | 1710A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB12JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50ns | Standard | 135A | 1 | 12A | 600V | 30μA @ 600V | 1.75V @ 12A | 12A | -55°C~150°C | ||||||||||||||||||||||||||||
| FS2G-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-fs2jtp-datasheets-2747.pdf | DO-214AC, SMA | 2 | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 150°C | 10 | 1 | Not Qualified | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 150ns | Standard | 50A | 1 | 2A | 50pF @ 4V 1MHz | 400V | 5μA @ 400V | 2A | -50°C~150°C | ||||||||||||||||||||||||||||
| UGB15HT-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 3 | 150°C | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500V | 50ns | Standard | 135A | 1 | 15A | 500V | 30μA @ 500V | 1.75V @ 15A | 15A | -55°C~150°C |
