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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-4EWH02FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs4ewh02fntrm3-datasheets-1878.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSSO-G2 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3μA | TO-252AA | 20 ns | Standard | 200V | 4A | 80A | 1 | 4A | 200V | 3μA @ 200V | 950mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| SE70PJ-M3/86A | Vishay Semiconductor Diodes Division | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se70pjhm3ai-datasheets-1595.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20μA | TO-277A | 2.6 μs | Standard | 600V | 2.9A | 120A | 1 | 7A | 76pF @ 4V 1MHz | 20μA @ 600V | 1.05V @ 7A | 2.9A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| SJPL-L4VL | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/sanken-sjpll4vr-datasheets-0780.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | Standard | 400V | 3A | 400V | 50μA @ 400V | 1.3V @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20MQ060NTRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs20mq060ntrpbf-datasheets-9952.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | DUAL | C BEND | 2 | Single | 1 | Not Qualified | R-PDSO-C2 | 40A | 500μA | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 60V | 2A | 1 | 31pF @ 10V 1MHz | 500μA @ 60V | 780mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| UH4PCCHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh4pbchm3ai-datasheets-9940.pdf | TO-277, 3-PowerDFN | 28 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | Standard | 150V | 2A | 21pF @ 4V 1MHz | 150V | 5μA @ 150V | 1.05V @ 2A | 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V12P8-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12p8m386a-datasheets-9900.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | TO-277A | Schottky | 80V | 4.3A | 200A | 1 | 80V | 1mA @ 80V | 660mV @ 12A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| SS10PH9-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss10ph10m386a-datasheets-6763.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS10PH9 | 3 | Common Anode | 1 | Rectifier Diodes | 10A | 200A | 10μA | CATHODE | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 90V | 200A | TO-277A | Schottky | 90V | 10A | 1 | 270pF @ 4V 1MHz | 10μA @ 90V | 880mV @ 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| PR6001-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2005 | /files/diodesincorporated-pr6005t-datasheets-6865.pdf | R6, Axial | 9.1mm | 9.1mm | 9.1mm | 2 | 12 Weeks | 2.099991g | 2 | no | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 6A | 1.2V | 300A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 300A | 150 ns | 150 ns | Standard | 50V | 6A | 1 | 6A | 50V | 140pF @ 4V 1MHz | 10μA @ 50V | 1.2V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||
| BYT56A-TR | Vishay Semiconductor Diodes Division | $0.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt56mtr-datasheets-9297.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1.4V | 80A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 80A | 50V | 100 ns | 100 ns | Avalanche | 50V | 3A | 1 | 1.5A | 5μA @ 50V | 1.4V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||
| BYT56A-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt56mtr-datasheets-9297.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 80A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 80A | 50V | 100 ns | 100 ns | Avalanche | 50V | 3A | 1 | 1.5A | 5μA @ 50V | 1.4V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| FES6G | ON Semiconductor | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-nrvfes6d-datasheets-8793.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 113.6mg | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | ULTRA FAST RECOVERY | SILICON | 80A | 400V | 2μA | 1.2V | RECTIFIER DIODE | 1 | 6A | 0.045μs | |||||||||||||||||||||||||||||||||||||||||||||
| V15PM10-M3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pm10hm3h-datasheets-5956.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 400μA @ 100V | 750mV @ 15A | 15A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE70PJ-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se70pjhm3ai-datasheets-1595.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20μA | TO-277A | 2.6 μs | Standard | 600V | 2.9A | 120A | 1 | 7A | 76pF @ 4V 1MHz | 20μA @ 100V | 1.05V @ 7A | 2.9A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| SE100PWBHM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se100pwjm3i-datasheets-8679.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | Standard Recovery >500ns, > 200mA (Io) | 2.6μs | Standard | 78pF @ 4V 1MHz | 100V | 20μA @ 100V | 1.14V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V15P12-M3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p12m3h-datasheets-9886.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 120V | 1mA @ 120V | 810mV @ 15A | 15A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V10P12-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v10p12hm3ah-datasheets-4043.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 10A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | 120V | 160A | TO-277A | Schottky | 120V | 10A | 1 | 400μA @ 120V | 820mV @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VS-50WQ03FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs50wq03fnm3-datasheets-7130.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5.5A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3mA | 30V | 320A | Schottky | 30V | 5.5A | 1 | 590pF @ 5V 1MHz | 3mA @ 30V | 460mV @ 5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SE100PWDHM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se100pwjm3i-datasheets-8679.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | Standard Recovery >500ns, > 200mA (Io) | 2.6μs | Standard | 78pF @ 4V 1MHz | 200V | 20μA @ 200V | 1.14V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V15P12-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p12m3h-datasheets-9886.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 120V | 1mA @ 120V | 810mV @ 15A | 15A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V12P8-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12p8m386a-datasheets-9900.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | TO-277A | Schottky | 80V | 4.3A | 200A | 1 | 80V | 1mA @ 80V | 660mV @ 12A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| ES3GHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es3fe357t-datasheets-1562.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | C BEND | ES3G | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50 ns | Standard | 400V | 3A | 100A | 1 | 3A | 30pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.1V @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| SS10P3-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss10p4m387a-datasheets-1623.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREEWHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS10P3 | 3 | Common Anode | 1 | 10A | 280A | 800μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | 30V | 280A | TO-277A | Schottky | 30V | 10A | 1 | 800μA @ 30V | 560mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| V10PM10HM3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v10pm10m3h-datasheets-8023.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 120μA @ 100V | 750mV @ 10A | 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB550-T |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMR2U-02 BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmr2u04tr13pbfree-datasheets-1840.pdf | DO-214AA, SMB | 26 Weeks | compliant | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 200V | 50ns | Standard | 50A | 2A | 28pF @ 4V 1MHz | 200V | 10μA @ 200V | 1V @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE70PD-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se70pjhm3ai-datasheets-1595.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20μA | TO-277A | 2.6 μs | Standard | 200V | 2.9A | 120A | 1 | 7A | 76pF @ 4V 1MHz | 20μA @ 200V | 1.05V @ 7A | 2.9A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| S10CMHM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s10cgm3i-datasheets-8026.pdf | DO-214AB, SMC | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 5μs | Standard | 79pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1V @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR8L60 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur8l60c0g-datasheets-9830.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | Standard | 600V | 5μA @ 600V | 1.3V @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-50WQ10FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs50wq10fntrlm3-datasheets-1221.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABLITY | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5.5A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 100V | 330A | Schottky | 100V | 5.5A | 1 | 183pF @ 5V 1MHz | 1mA @ 100V | 770mV @ 5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| V12PM12-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12p12m386a-datasheets-7519.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | TO-277A | Schottky | 120V | 12A | 160A | 1 | 4.1A | 120V | 500μA @ 120V | 800mV @ 12A | -40°C~150°C |
