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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| CDLL1A50 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 1A | 900mV | ISOLATED | 220 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | Schottky | 50V | 1A | 1A | 0.9pF @ 5V 1MHz | 100μA @ 50V | 600mV @ 1A | |||||||||||||||||||||||||||||||||||||||||||||
| 1N7055-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 20 Weeks | NO | Current Regulator Diodes | SILICON | 0.5W | 50V | CURRENT REGULATOR DIODE | 10mA | 7.2V | 10000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 95A | 1.4V | 2.09kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.09kA | 9mA | 1.2kV | 2.09kA | 1.2kV | Standard | 1.2kV | 95A | 1 | 1200V | 1.4V @ 267A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPF10-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60apf12m3-datasheets-0715.pdf | TO-247-2 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 480 ns | Standard | 1kV | 60A | 830A | 1 | 1000V | 100μA @ 1000V | 1.4V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3070-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n30701-datasheets-5980.pdf | DO-204AA, DO-7, Axial | 2 | 6 Weeks | 2 | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | WIRE | 2 | Single | 1 | Rectifier Diodes | Not Qualified | 100A | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 175V | 50ns | Standard | 0.1A | 175V | 1V @ 100mA | 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3070UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n3070ur1-datasheets-5981.pdf | DO-204AA, DO-7, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 1N3070 | 2 | Single | 1 | Rectifier Diodes | 100mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100nA | 175V | 2A | 50 ns | Standard | 175V | 100mA | 0.1A | 100nA @ 175V | 1V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-1N1188R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1188 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 400A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 400V | Standard, Reverse Polarity | 400V | 35A | 500A | 1 | 10mA @ 400V | 1.7V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N6642USE3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6643us-datasheets-0665.pdf | SQ-MELF, B | IN PRODUCTION (Last Updated: 3 weeks ago) | B, SQ-MELF | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | Standard | 5pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7050-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 20 Weeks | NO | Current Regulator Diodes | SILICON | 0.5W | 70V | CURRENT REGULATOR DIODE | 6.2mA | 4.46V | 80000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6FLR100S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs16fl100s05-datasheets-1595.pdf | DO-203AA, DO-4, Stud | 13 Weeks | Single | DO-203AA | 135A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 50μA | 1kV | 500 ns | 500 ns | Standard, Reverse Polarity | 1kV | 6A | 1000V | 50μA @ 1000V | 1.4V @ 6A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-52PF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50pf80-datasheets-5673.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 830A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | Standard | 1.2kV | 50A | 1 | 1200V | 1.4V @ 125A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IDC40D120T6MX1SA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-idc40d120t6mx1sa4-datasheets-5968.pdf | Die | Lead Free | 1 | EAR99 | 8541.10.00.40 | Halogen Free | YES | UPPER | NO LEAD | NOT SPECIFIED | 1 | 175°C | NOT SPECIFIED | 1 | Not Qualified | S-XUUC-N1 | 1.2kV | SINGLE | 1.2kV | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | Standard | 1 | 75A | 1200V | 14μA @ 1200V | 2.05V @ 75A | 75A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1185A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1185 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 1.3V | 800A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 150V | 150V | Standard | 150V | 40A | 1 | 2.5mA @ 150V | 1.3V @ 126A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
| JAN1N5418 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 80A | 150 ns | Standard | 400V | 3A | 1 | 3A | 1μA @ 400V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPF06-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-2 | 15.9mm | 20.3mm | 5.3mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 60A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 830A | 100μA | 600V | 180 ns | Standard | 600V | 60A | 1 | 100μA @ 600V | 1.3V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1188RA | Vishay Semiconductor Diodes Division | $6.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1188 | 200°C | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 800A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.5mA | 400V | Standard, Reverse Polarity | 400V | 40A | 1 | 2.5mA @ 400V | 1.3V @ 126A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPF04-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-2 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 180 ns | Standard | 400V | 60A | 830A | 1 | 400V | 100μA @ 400V | 1.3V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-42HFR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | Single | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1kV | Standard, Reverse Polarity | 1kV | 40A | 1 | 1000V | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PFR120 | Vishay Semiconductor Diodes Division | $6.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pf80w-datasheets-5784.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 95A | 1.4V | 2.09kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.09kA | 9mA | 1.2kV | 1.2kV | Standard, Reverse Polarity | 1.2kV | 95A | 1 | 1200V | 1.4V @ 267A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-42HFR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 200V | Standard, Reverse Polarity | 200V | 40A | 1 | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7049-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 20 Weeks | NO | Current Regulator Diodes | SILICON | 0.5W | 80V | CURRENT REGULATOR DIODE | 5.6mA | 4.03V | 90000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5623 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | Yes | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | 500 ns | Standard | 1kV | 1A | 1A | 15pF @ 12V 1MHz | 1000V | 500nA @ 1000V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5552 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | Contains Lead | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 600V | 5A | 1 | 5A | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N7048-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 20 Weeks | NO | Current Regulator Diodes | SILICON | 0.5W | 80V | CURRENT REGULATOR DIODE | 5.1mA | 3.67V | 100000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1186R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1186 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.7V | 400A | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500A | 10mA | 200V | 400A | 200V | Standard, Reverse Polarity | 200V | 35A | 1 | 10mA @ 200V | 1.7V @ 110A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||
| VS-60APF02-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 180 ns | Standard | 200V | 60A | 830A | 1 | 200V | 100μA @ 200V | 1.3V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5620 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 800V | 1A | 1A | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| FR12B05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 500 ns | 500 ns | Standard | 100V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs95pfr140w-datasheets-5831.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 95A | 1.8kA | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | 1.8kA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 95A | 1 | 1600V | 1.4V @ 267A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FR12K05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2016 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | CATHODE | 2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 800V | 800V | 500 ns | 500 ns | Standard | 800V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C |
