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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| FR16B05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 500 ns | 500 ns | Standard | 100V | 16A | 1 | 25μA @ 100V | 1.4V @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6638US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6643us-datasheets-0665.pdf | SQ-MELF, D | D-5D | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 2.5pF @ 0V 1MHz | 125V | 500nA @ 125V | 1.1V @ 200mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR16J05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 500 ns | 500 ns | Standard | 600V | 16A | 1 | 25μA @ 100V | 1.1V @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-12FR60M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard, Reverse Polarity | 600V | 12A | 280A | 1 | 600V | 1.26V @ 38A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| FR16B02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 6 | Right Angle | 6mOhm | UPPER | 1 | O-MUPM-D1 | 3.96mm | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard | 100V | 16A | 1 | 25μA @ 100V | 900mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-16F120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs16fr60-datasheets-2233.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 12000μA | 29 ns | Standard | 1.2kV | 16A | 370A | 1 | 1200V | 1.23V @ 50A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| S40JR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s40jr-datasheets-9384.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 595A | SINGLE | ANODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 600V | Standard, Reverse Polarity | 600V | 40A | 1 | 10μA @ 100V | 1.1V @ 40A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N1183AR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | /files/genesicsemiconductor-1n1183ar-datasheets-9366.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N1183AR | 200°C | 1 | O-MUPM-D1 | 40A | 800A | SINGLE | ANODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 50V | Standard, Reverse Polarity | 50V | 40A | 1 | 10μA @ 50V | 1.1V @ 40A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-25F80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 25A | 1.3V | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 373A | 12mA | 800V | 373A | Standard | 800V | 25A | 1 | 1.3V @ 78A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| FR6D05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 500 ns | 500 ns | Standard | 200V | 16A | 1 | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N5620US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 800V | 1A | 1A | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||
| FR16G02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 200 ns | 200 ns | Standard | 400V | 16A | 1 | 25μA @ 100V | 900mV @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-25F10M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard | 100V | 25A | 373A | 1 | 100V | 1.3V @ 78A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-85HF10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5kA | 9mA | 100V | 1.8kA | 100V | Standard | 100V | 85A | 1 | 9mA @ 100V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||
| FR16J02 | GeneSiC Semiconductor | $10.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 250 ns | 250 ns | Standard | 600V | 16A | 1 | 25μA @ 100V | 900mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-25FR100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard, Reverse Polarity | 1kV | 25A | 373A | 1 | 1000V | 1.3V @ 78A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| FR6B05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | CATHODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 500 ns | 500 ns | Standard | 100V | 16A | 1 | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-12FR100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard, Reverse Polarity | 1kV | 12A | 280A | 1 | 1000V | 1.26V @ 38A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-72HF40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB (DO-5) | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 15mA | 400V | Standard | 400V | 70A | 400V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-72HFR60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB (DO-5) | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 9mA | 600V | Standard, Reverse Polarity | 600V | 70A | 600V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR16G05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 500 ns | 500 ns | Standard | 400V | 16A | 1 | 25μA @ 100V | 1.1V @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-25F40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard | 400V | 25A | 373A | 1 | 400V | 1.3V @ 78A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-40HFL10S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 420A | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 200 ns | 200 ns | Standard | 100V | 40A | 1 | 100μA @ 100V | 1.95V @ 40A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||
| VS-12F120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard | 1.2kV | 12A | 280A | 1 | 1200V | 1.26V @ 38A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| S40M | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s40m-datasheets-9364.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 595A | SINGLE | CATHODE | GENERAL PURPOSE | 1.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 1kV | Standard | 1kV | 40A | 1 | 1000V | 10μA @ 100V | 1.1V @ 40A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||
| 129SPC135A | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | SPD-3A | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3000pF @ 5V 1MHz | 135V | 3mA @ 135V | 870mV @ 120A | 120A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95PF160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs95pfr140w-datasheets-5831.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard | 1.6kV | 95A | 1800A | 1 | 1600V | 1.4V @ 267A | -55°C~180°C | ||||||||||||||||||||||||||||||||||||||||||
| JAN1N6620 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 20A | 0.5μA | 30 ns | Standard | 220V | 2A | 1 | 10pF @ 10V 1MHz | 500nA @ 220V | 1.6V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||
| VS-6F100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs6f60-datasheets-2910.pdf | DO-203AA, DO-4, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12000μA | Standard | 1kV | 6A | 167A | 1 | 6A | 1000V | 1.1V @ 19A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-25FR80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | O-MUPM-D1 | 25A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 373A | 12mA | 800V | Standard, Reverse Polarity | 800V | 25A | 1 | 1.3V @ 78A | -65°C~175°C |
