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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N482B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | /files/microsemicorporation-1n482b-datasheets-6670.pdf | DO-204AH, DO-35, Axial | 2 | 17 Weeks | no | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | NOT SPECIFIED | 200°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.25W | Standard | 0.2A | 30V | 25nA @ 30V | 1V @ 100mA | 200mA | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D40SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | 400V | 30A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | Standard | Single | D3 [S] | 30A | 30A | 1.5V | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 400V | 320A | 55 ns | Standard | 200V | 45A | 400V | 250μA @ 400V | 1.5V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N457A | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n458a-datasheets-1107.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 225mA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 70V | DO-7 | Standard | 70V | 150mA | 0.075A | 1μA @ 70V | 1V @ 100mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH09SG60CXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idh09sg60cxksa2-datasheets-6673.pdf | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | Single | 1 | 9A | 2.1V | 49A | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 115W | 49A | 80μA | 600V | 49A | 0ns | Silicon Carbide Schottky | 600V | 9A | 1 | 9A | 280pF @ 1V 1MHz | 80μA @ 600V | 2.1V @ 9A | 9A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5552C.TR | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | Not Applicable | Axial | 12 Weeks | 1N5552 | Standard Recovery >500ns, > 200mA (Io) | 2μs | Standard | 92pF @ 5V 1MHz | 600V | 1μA @ 600V | 1V @ 3A | 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL0.5A20 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 20V | Schottky | 20V | 500mA | 0.5A | 50pF @ 0V 1MHz | 10μA @ 20V | 650mV @ 500mA | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPF10-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs30apf10m3-datasheets-0552.pdf | TO-247-2 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 450 ns | Standard | 1kV | 30A | 350A | 1 | 1000V | 100μA @ 1000V | 1.41V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75DQ100BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt75dq100bg-datasheets-6679.pdf | 1kV | 75A | TO-247-2 | Lead Free | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 75A | 75A | 3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 540A | 250 ns | Standard | 1kV | 75A | 1 | 1000V | 100μA @ 1000V | 3V @ 75A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| UPR30/TR7 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-upr40e3tr13-datasheets-4639.pdf | DO-216AA | 1 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | GULL WING | UPR30 | Single | 1 | S-PSSO-G1 | 2A | 1.25V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | 20A | 50 ns | Standard | 300V | 2A | 1 | 2A | 10μA @ 300V | 1.25V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4246 | Microsemi Corporation | $3.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 25A | 5 μs | Standard | 400V | 1A | 1A | 1μA @ 400V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPS08PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs60eps12m3-datasheets-1459.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 8 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Single | 1 | Rectifier Diodes | 60A | 950A | CATHODE | HIGH VOLTAGE | 0.2 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.1kA | 100μA | 800V | 1.1kA | 800V | Standard | 800V | 60A | 1 | 100μA @ 800V | 1.09V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-30APF12-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs30apf10m3-datasheets-0552.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 450 ns | Standard | 1.2kV | 30A | 350A | 1 | 1200V | 100μA @ 1200V | 1.41V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPF02-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishay-vs30epf02pbf-datasheets-8414.pdf | TO-247-2 | 15.9mm | 20.3mm | 5.3mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350A | 100μA | 200V | 60 ns | Standard | 200V | 30A | 1 | 100μA @ 200V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPF10PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs30epf12pbf-datasheets-6201.pdf | TO-247-2 | 15.9mm | 20.3mm | 5.3mm | 2 | 8 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | 350A | CATHODE | FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350A | 100μA | 1kV | 1kV | 450 ns | 450 ns | Standard | 1kV | 30A | 1 | 1000V | 100μA @ 1000V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N5418C.TR | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | Not Applicable | AVALANCHE | Axial | 2 | 12 Weeks | HIGH RELIABILITY | NO | WIRE | 1N5418 | 175°C | -65°C | 1 | E-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 1μA | 400V | 150ns | Standard | 100A | 1 | 3A | 165pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.1V @ 3A | 4.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PF140 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.70 | NO | WIRE | 2 | 120°C | -65°C | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200 ns | Standard | 12kV | 3mA | 0.003A | 4pF @ 5V 1MHz | 12000V | 100nA @ 12000V | 52V @ 20mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-12FR60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs12fr120-datasheets-0536.pdf | 12A | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | 2 | EAR99 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 12FR60 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 16A | 1.23V | 280A | ANODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 280A | 12mA | 600V | 370A | 600V | Standard, Reverse Polarity | 600V | 12A | 1 | 12mA @ 600V | 1.26V @ 38A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-30APF02-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishay-vs30epf02pbf-datasheets-8414.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | Schottky | 100V | 3A | 320A | 1 | 30A | 0.16μs | 115pF @ 5V 1MHz | 100V | 500μA @ 100V | 790mV @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1203RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | 12A | DO-203AA, DO-4, Stud | 13 Weeks | 1N1203 | Single | DO-203AA | 12A | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 1.75mA | 300V | 240A | 300V | Standard, Reverse Polarity | 300V | 12A | 300V | 1.75mA @ 300V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPF04-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishay-vs30epf02pbf-datasheets-8414.pdf | TO-247-2 | 15.9mm | 20.3mm | 5.3mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 30A | CATHODE | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350A | 100μA | 400V | 160 ns | Standard | 400V | 30A | 1 | 100μA @ 400V | 1.41V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL483B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll486b-datasheets-5936.pdf | DO-213AA | 2 | 17 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | O-LELF-R2 | 200mA | ISOLATED | 100 °C/W | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100μA | 70V | Standard | 80V | 200mA | 0.2A | 100μA @ 80V | 1V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GB05SLT12-252 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | No SVHC | 3 | yes | EAR99 | PD-CASE | 8541.10.00.80 | 42W | GULL WING | NOT SPECIFIED | GB05SLT12 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 5A | 32A | 26μA | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 25 ns | Silicon Carbide Schottky | 1.2kV | 5A | 1 | 5A | 260pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SD200SC100A1.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1500pF @ 5V 1MHz | 100V | 100μA @ 100V | 870mV @ 60A | 60A | -55°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1203A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 13 Weeks | 2 | 1N1203 | Single | DO-203AA | 12A | 1.35V | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 1.75mA | 300V | 240A | 300V | Standard | 300V | 12A | 300V | 1.75mA @ 300V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D120SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30d120bg-datasheets-1174.pdf | 1.2kV | 30A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | Standard | Single | D3 [S] | 30A | 30A | 2.5V | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 1.2kV | 210A | 370ns | Standard | 1200V | 250μA @ 1200V | 2.5V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RURG80100-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | /files/onsemiconductor-rurg80100f085-datasheets-6606.pdf | TO-247-2 | 2 | 4 Weeks | 6.33g | ACTIVE (Last Updated: 2 days ago) | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T2 | 80A | SINGLE | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1kV | 250μA | 200 ns | Standard | 1kV | 80A | 1 | 1000V | 250μA @ 80V | 1.9V @ 80A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA30P1200HB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | TO-247-3 | 20 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Standard Recovery >500ns, > 200mA (Io) | Standard | 11pF @ 400V 1MHz | 1200V | 40μA @ 1200V | 1.26V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1199RA | Vishay Semiconductor Diodes Division | $3.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1206ra-datasheets-0539.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 13 Weeks | 2 | 1N1199 | Single | DO-203AA | 12A | 1.35V | 240A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 240A | 3mA | 50V | 240A | 50V | Standard, Reverse Polarity | 50V | 12A | 50V | 3mA @ 50V | 1.35V @ 12A | 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30APF04-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishay-vs30epf02pbf-datasheets-8414.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 60 ns | Standard | 400V | 30A | 320A | 1 | 400V | 100μA @ 400V | 1.41V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-25F10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | 11mm | DO-203AA, DO-4, Stud | 31.8mm | 31.8008mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 25A | 900mV | 373A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 12mA | 100V | 373A | 100V | Standard | 100V | 25A | 1 | 12mA @ 100V | 1.3V @ 78A | -65°C~175°C |
