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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Power Rating | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EGP31F-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 48pF @ 4V 1MHz | 300V | 3μA @ 300V | 1.25V @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS16W-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-mmbd4148w7f-datasheets-3154.pdf | SOT-323 | 2pF | 2.2mm | 1mm | 1.35mm | Contains Lead | 3 | 6.010099mg | 3 | EAR99 | not_compliant | 8541.10.00.70 | 200mW | e0 | Tin/Lead (Sn85Pb15) | Standard | DUAL | GULL WING | 235 | 3 | Single | 10 | 1 | Not Qualified | 150mA | 150mA | 1.25V | 2A | SILICON | 0.2W | 1μA | 2A | 4 ns | 4 ns | RECTIFIER DIODE | 75V | 150mA | |||||||||||||||||||||||||||||||||||||||||
| EGP31C-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 150V | 1μA @ 150V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMEG45T15EPDZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/nexperiausainc-pmeg45t15epdaz-datasheets-5921.pdf | TO-277, 3-PowerDFN | 3 | 4 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | IEC-60134 | DUAL | FLAT | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.4W | 100μA | 20 ns | Schottky | 45V | 15A | 210A | 1 | 2200pF @ 1V 1MHz | 45V | 100μA @ 45V | 580mV @ 15A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| SDURB15Q60TR | SMC Diode Solutions | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE12DG-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-se12djm3i-datasheets-1818.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20μA | TO-263AC | 3 μs | Standard | 400V | 3.2A | 125A | 1 | 90pF @ 4V 1MHz | 400V | 20μA @ 400V | 1.15V @ 12A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| SF1008G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sf1006gc0g-datasheets-1806.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 50pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 5A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYW75TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw76tap-datasheets-5932.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | EAR99 | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1.1V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 500V | 100A | 500V | 200 ns | 200 ns | Avalanche | 500V | 3A | 1 | 3A | 5μA @ 500V | 1.1V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| EGP31G-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 48pF @ 4V 1MHz | 400V | 4μA @ 400V | 1.25V @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP51A-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 50V | 5μA @ 50V | 960mV @ 5A | 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP31D-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 200V | 2μA @ 200V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP31G-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 48pF @ 4V 1MHz | 400V | 4μA @ 400V | 1.25V @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP51C-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 150V | 5μA @ 150V | 960mV @ 5A | 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SURD8530T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | SINGLE | GULL WING | MURD530 | 3 | Common Anode | 1 | Rectifier Diodes | R-PSSO-G2 | 5A | CATHODE | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | 5μA | 300V | 75A | 50 ns | Standard | 300V | 5A | 1 | 5A | 5μA @ 300V | 1.05V @ 5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| EGP31D-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 200V | 2μA @ 200V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AR3PJHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pdm386a-datasheets-5460.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 50A | TO-277A | 140 ns | Avalanche | 600V | 1.8A | 1 | 44pF @ 4V 1MHz | 10μA @ 600V | 1.6V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VT760-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vbt760e34w-datasheets-9800.pdf | TO-220-2 | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AC | Schottky | 60V | 7.5A | 100A | 1 | 60V | 700μA @ 60V | 800mV @ 7.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| EGP31A-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 50V | 5μA @ 50V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBR735-M3 | Vishay Semiconductor Diodes Division | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbr745m3-datasheets-3409.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 400pF @ 5V 1MHz | 35V | 100μA @ 35V | 840mV @ 15A | 7.5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP31B-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 100V | 1μA @ 100V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V20PL50-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v20pl50m386a-datasheets-2665.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | TO-277A | Schottky | 50V | 5.5A | 240A | 1 | 50V | 3mA @ 50V | 590mV @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| BYV28-050-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv28200tr-datasheets-5476.pdf | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | METALLURGICALLY BONDED | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | 3.5A | 1.1V | 90A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 90A | 50V | 30 ns | 30 ns | Avalanche | 50V | 3.5A | 1 | 1μA @ 50V | 1.1V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| SS15P3S-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss15p3sm386a-datasheets-5928.pdf | TO-277, 3-PowerDFN | 4.35mm | 800μm | 6.15mm | 3 | 10 Weeks | Unknown | 3 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | DUAL | FLAT | SS15 | 3 | Common Anode | 1 | Rectifier Diodes | 15A | 570mV | 40A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 280A | 1mA | 30V | 280A | TO-277A | 10 ns | Schottky | 30V | 15A | 1 | 1mA @ 30V | 570mV @ 15A | 200°C Max | ||||||||||||||||||||||||||||||||||||
| BYV28-050-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv28200tr-datasheets-5476.pdf | 3.5A | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | METALLURGICALLY BONDED | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 3.5A | 1.1V | 90A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 90A | 50V | 30 ns | 30 ns | Avalanche | 50V | 3.5A | 1 | 1μA @ 50V | 1.1V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| VFT760-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vbt760e34w-datasheets-9800.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AC | Schottky | 60V | 7.5A | 100A | 1 | 60V | 700μA @ 60V | 800mV @ 7.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VT760-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vit760m34w-datasheets-2582.pdf | TO-220-2 | 2 | 10 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 7.5A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | 60V | 100A | Schottky | 60V | 7.5A | 1 | 700μA @ 60V | 800mV @ 7.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SL44HE3_B/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sl44e357t-datasheets-5192.pdf | DO-214AB, SMC | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 500mV @ 8A | 8A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFF505G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sff504gc0g-datasheets-7558.pdf | TO-220-3 Full Pack, Isolated Tab | 12 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 50pF @ 4V 1MHz | 300V | 10μA @ 300V | 1.3V @ 2.5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF1005G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sf1006gc0g-datasheets-1806.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 50pF @ 4V 1MHz | 300V | 10μA @ 300V | 1.3V @ 5A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE10DDHM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-se10djm3i-datasheets-4078.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 15μA | TO-263AC | 3 μs | Standard | 200V | 3A | 110A | 1 | 3A | 67pF @ 4V 1MHz | 200V | 15μA @ 100V | 1.15V @ 10A | -55°C~175°C |
