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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Interface | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Max Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Number of Outputs | Breakdown Voltage | Natural Thermal Resistance | Speed | Output Configuration | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX1N5811US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 125A | 30 ns | Standard | 150V | 3A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-80APS08PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | /files/vishay-vs80aps08m3-datasheets-8236.pdf | TO-247-3 | 3 | 8 Weeks | 3 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | Common Anode | 1 | 80A | 1.17V | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | 800V | 1.5kA | TO-247AC | Standard | 800V | 80A | 1 | 100μA @ 800V | 1.17V @ 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB1A60 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | Single | 1 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 60V | Schottky | 60V | 1A | 1A | 100μA @ 80V | 690mV @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 1.3V | 595A | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 595A | 1.2kV | Standard, Reverse Polarity | 1.2kV | 40A | 1 | 1200V | 9mA @ 1200V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6643 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jans1n6642-datasheets-6195.pdf | Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | 2 | Single | 1 | Qualified | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 50V | 500nA | 75V | 2.5A | DO-35 | 6 ns | Standard | 0.3A | 5pF @ 0V 1MHz | 125V | 50nA @ 20V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-60HFUR-300 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 15 Weeks | 60HFUR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5804US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/477F | END | WRAP AROUND | Single | 1 | Qualified | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 35A | 25 ns | Standard | 100V | 1A | 1 | 25pF @ 10V 1MHz | 1μA @ 100V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N2133RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N2133 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 60A | 1.3V | 900A | ANODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 900A | 10mA | 300V | 300V | Standard, Reverse Polarity | 300V | 60A | 1 | 10mA @ 300V | 1.3V @ 188A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N5809US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/477 | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | O-LELF-R2 | 6A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 5μA | 100V | 125A | 30 ns | Standard | 100V | 6A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| SCS105KGC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs105kgc-datasheets-9019.pdf | TO-220-2 | Lead Free | On/Off | EAR99 | NO | 83W | 1 | Rectifier Diodes | 2A | 1.5V | 1 | No Recovery Time > 500mA (Io) | High Side | 100μA | 1.2kV | 0ns | Silicon Carbide Schottky | 5A | 325pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.75V @ 5A | 5A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5819UR-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF (Glass) | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/586F | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1A | 800mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 45V | Schottky | 1A | 70pF @ 5V 1MHz | 50μA @ 45V | 490mV @ 1A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5615US | Microsemi Corporation | $10.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 1A | 500μA @ 200V | 800mV @ 3A | 1A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5811/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Tape & Reel (TR) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | B, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | Standard | 60pF @ 10V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4946 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/360 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | MIL-19500/359F | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 15A | 250 ns | Standard | 600V | 1A | 1A | 1μA @ 600V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| FR16GR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 10 | Straight | 10mOhm | UPPER | 1 | O-MUPM-D1 | 3.96mm | 16A | 225A | SINGLE | ANODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 16A | 1 | 25μA @ 100V | 1.1V @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FR12BR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-88HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 600V | 1.8kA | 600V | Standard | 600V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-88HFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | 1.8kA | 800V | Standard, Reverse Polarity | 800V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5617US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 150 ns | Standard | 1A | 35pF @ 12V 1MHz | 500μA @ 400V | 1.6V @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6640US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6640us-datasheets-9012.pdf | SQ-MELF, D | Contains Lead | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | END | WRAP AROUND | 235 | 1N6640 | 2 | Single | 20 | 1 | Qualified | 300mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 50V | 2.5A | 4 ns | Standard | 50V | 300mA | 0.3A | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-71HFR40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 13 Weeks | Unknown | 2 | No | Single | DO-203AB | 70A | 1.35V | 1.25kA | 400V | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | 15mA | 400V | 1.25kA | 400V | Standard, Reverse Polarity | 400V | 70A | 400V | 15mA @ 400V | 1.35V @ 220A | 70A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR12GR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 12A | 180A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 12A | 1 | 25μA @ 100V | 800mV @ 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5619US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 250 ns | Standard | 1A | 25pF @ 12V 1MHz | 500nA @ 600V | 1.6V @ 3A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.369kA | 9mA | 800V | 1.8kA | 800V | 500 ns | Standard, Reverse Polarity | 800V | 85A | 1 | 9mA @ 800V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5419 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 500V | 80A | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6677UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | SCHOTTKY | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | Contains Lead | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 200mA | ISOLATED | SILICON | 40V | RECTIFIER DIODE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5811US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/477 | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 5μA | 150V | 125A | 30 ns | Standard | 150V | 6A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-87HF100 | Vishay Semiconductor Diodes Division | $2.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1kV | Standard | 400V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5614US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 2 μs | Standard | 200V | 1A | 1A | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3766 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3766 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.8V | 400A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400A | 4mA | 800V | 400A | 800V | Standard | 800V | 35A | 1 | 4mA @ 800V | 1.8V @ 110A | -65°C~190°C |
