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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| DSA17-16A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | Not Applicable | 180°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsa1716a-datasheets-9402.pdf | 1.6kV | 40A | DO-203AA, DO-4, Stud | 31.32mm | 11mm | Lead Free | 12 Weeks | No SVHC | 2 | Reverse | Single | DO-203AA | 40A | 25A | 1.36V | 370A | Standard Recovery >500ns, > 200mA (Io) | 400A | 4mA | 1.6kV | 400A | 1.6kV | Avalanche | 1.6kV | 25A | 1600V | 4mA @ 1600V | 1.36V @ 55A | 25A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| R9G01618XX | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/powerexinc-r9g00218xx-datasheets-8580.pdf | DO-200AB, B-PUK | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | END | UNSPECIFIED | NOT SPECIFIED | 2 | 175°C | -40°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XEDB-X2 | SINGLE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 25 μs | Standard | 1.6kV | 1.8kA | 21500A | 1 | 1800A | 1600V | 150mA @ 1600V | 1.2V @ 1500A | 1800A | ||||||||||||||||||||||||||||||||||||||||||||||
| S85QR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.1V | 1.05kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 10μA | 1.2kV | 1.2kV | Standard, Reverse Polarity | 1.2kV | 85A | 1 | 1200V | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6620 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 20A | 0.5μA | DO-41 | 30 ns | Standard | 220V | 2A | 1 | 10pF @ 10V 1MHz | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| S85GR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s85gr-datasheets-1219.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 180°C | 1 | O-MUPM-D1 | 85A | 1.05kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard, Reverse Polarity | 400V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| S85KR | GeneSiC Semiconductor | $14.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s85kr-datasheets-1220.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 180°C | 1 | O-MUPM-D1 | 85A | 1.05kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard, Reverse Polarity | 800V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GKR71/04 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2017 | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | SINGLE | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 95A | 1150A | 400V | 10mA @ 400V | 1.5V @ 60A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5711UR-1/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/444 | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n5711ur1-datasheets-6369.pdf | DO-213AA | DO-213AA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2pF @ 0V 1MHz | 50V | 200nA @ 50V | 1V @ 15mA | 33mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GKN71/08 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | SINGLE | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 95A | 1150A | 800V | 10mA @ 800V | 1.5V @ 60A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PF0 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | WIRE | 2 | 175°C | -65°C | 1 | Rectifier Diodes | Not Qualified | E-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300 ns | Standard | 1kV | 850mA | 38A | 0.85A | 18pF @ 5V 1MHz | 1000V | 1μA @ 1000V | 1.35V @ 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GKN71/16 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | 95A | SINGLE | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.6kV | 95A | 1600V | 10mA @ 1600V | 1.5V @ 60A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6624 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 900V | 990V | 30ns | Standard | 1A | 900V | 500nA @ 900V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5190 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | WIRE | 2 | Single | 1 | Qualified | 3A | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 600V | 80A | 400 ns | Standard | 1 | 3A | 2μA @ 600V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| PFF4 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 400V | 700mA | 22A | 0.7A | 30pF @ 5V 1MHz | 400V | 1μA @ 400V | 2.5V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HF100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 1kV | Standard | 1kV | 70A | 1000V | 9mA @ 1000V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GKR71/08 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | SINGLE | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 95A | 1150A | 800V | 10mA @ 800V | 1.5V @ 60A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5826 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-1n5826-datasheets-1192.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N5826 | 1 | O-MUPM-D1 | 15A | 700mV | SINGLE | CATHODE | POWER | 1.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500A | 1μA | 20V | DO-203AA | Schottky | 20V | 15A | 1 | 10mA @ 20V | 440mV @ 15A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| PFF2 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 200V | 1.25A | 22A | 0.7A | 30pF @ 5V 1MHz | 200V | 1μA @ 200V | 2.5V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6642 | Microsemi Corporation | $13.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6642-datasheets-9382.pdf | Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | 2 | Single | 1 | Qualified | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 75V | 500nA | 100V | 2.5A | 5 ns | Standard | 0.3A | 500nA @ 100V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-70HFL10S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 70A | 730A | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 500 ns | 500 ns | Standard | 100V | 70A | 1 | 100μA @ 100V | 1.85V @ 219.8A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6625 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 1.1kV | 30ns | Standard | 1A | 1000V | 1μA @ 1000V | 1.75V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5554 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 14 Weeks | 2 | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.3V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 2 μs | Standard | 1kV | 5A | 1 | 5A | 1000V | 1μA @ 1000V | 1.3V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| S85DR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s85dr-datasheets-1196.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 180°C | 1 | O-MUPM-D1 | 85A | 1.05kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard, Reverse Polarity | 200V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| S85K | GeneSiC Semiconductor | $14.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s85k-datasheets-1197.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 180°C | 1 | O-MUPM-D1 | 85A | 1.05kA | SINGLE | CATHODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 800V | Standard | 800V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GKR71/14 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | SINGLE | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.4kV | 95A | 1150A | 1400V | 10mA @ 1400V | 1.5V @ 60A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR30DR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 75°C | 0°C | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 17 | Straight | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 2.54mm | 30A | 300A | SINGLE | ANODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 200 ns | 200 ns | Standard, Reverse Polarity | 200V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| S85D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s85d-datasheets-1202.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 180°C | 1 | O-MUPM-D1 | 85A | 1.05kA | SINGLE | CATHODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200V | Standard | 200V | 85A | 1 | 10μA @ 100V | 1.1V @ 85A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 9mA | 1.2kV | Standard | 1.2kV | 70A | 1200V | 9mA @ 1200V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S85Y | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-s85y-datasheets-1204.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 85A | 1.05kA | SINGLE | CATHODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.6kV | 1.6kV | Standard | 1.6kV | 85A | 1 | 1600V | 10μA @ 100V | 1.1V @ 85A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFLR60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 70A | 730A | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 730A | 100μA | 600V | 730A | 600V | 500 ns | 500 ns | Standard, Reverse Polarity | 600V | 70A | 1 | 100μA @ 600V | 1.85V @ 219.8A | -40°C~125°C |
