| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | Power Rating | JESD-609 Code | Terminal Finish | Polarity | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Max Output Current | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Number of Outputs | Breakdown Voltage | Natural Thermal Resistance | Speed | Output Configuration | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| DL4933-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dl493613-datasheets-1569.pdf | 50V | 1A | MELF | 15pF | Contains Lead | 2 | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | Standard | END | WRAP AROUND | 235 | 2 | Single | 10 | 1 | Not Qualified | 1A | 1.2V | ISOLATED | SILICON | 30A | 200 ns | RECTIFIER DIODE | 50V | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS16-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-mmbd41487f-datasheets-7965.pdf | 75V | 200mA | TO-236-3, SC-59, SOT-23-3 | 2pF | 3.05mm | 1mm | 1.4mm | Contains Lead | 3 | 200.998119mg | 3 | EAR99 | not_compliant | 8541.10.00.70 | 350mW | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 235 | BAS16 | 3 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | 200mA | 200mA | 1.25V | 2A | Small Signal =< 200mA (Io), Any Speed | SILICON | 1μA | 2A | 4 ns | 4 ns | Standard | 75V | 200mA | 2pF @ 0V 1MHz | 1μA @ 75V | 1.25V @ 150mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| 12F80B BN R Y | Vishay Semiconductor Opto Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | DO-203AA, DO-4, Stud | 12F80 | DO-203AA | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 1.26V @ 38A | 12A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12FR10B BN BK R | Vishay Semiconductor Opto Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | DO-203AA, DO-4, Stud | 12FR10 | DO-203AA | Standard Recovery >500ns, > 200mA (Io) | Standard | 100V | 1.26V @ 38A | 12A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-11DQ06 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs11dq06-datasheets-1678.pdf | 2.7mm | DO-204AL, DO-41, Axial | 5.207mm | 2.7mm | 2.7mm | 2 | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e2 | TIN SILVER | WIRE | 260 | 2 | Single | 30 | 1 | 1.1A | 760mV | 150A | 1mA | ISOLATED | GENERAL PURPOSE | 100 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 1mA | 60V | 150A | Schottky | 60V | 1.1A | 1 | 1mA @ 60V | 580mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| MBR7580 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 80V | Schottky | 80V | 75A | 1 | 1mA @ 80V | 840mV @ 75A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR60100R | GeneSiC Semiconductor | $23.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 880mV | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700A | 1μA | 100V | Schottky, Reverse Polarity | 100V | 60A | 1 | 5mA @ 20V | 840mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HF100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 1kV | 70A | 1000V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-11DQ03 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs11dq03-datasheets-1656.pdf | 2.7mm | DO-204AL, DO-41, Axial | 5.207mm | 2.7mm | 2.7mm | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | 1.1A | 550mV | 225A | 1mA | ISOLATED | GENERAL PURPOSE | 100 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 225A | 1mA | 30V | 225A | 30 ns | Schottky | 30V | 1.1A | 1 | 1mA @ 30V | 550mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS110KGC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs110kgc-datasheets-1660.pdf | TO-220-2 | Lead Free | On/Off | EAR99 | NO | 100W | 1 | Rectifier Diodes | 2A | 1.5V | 1 | No Recovery Time > 500mA (Io) | High Side | 200μA | 1.2kV | 0ns | Silicon Carbide Schottky | 10A | 45A | 650pF @ 1V 1MHz | 1200V | 200μA @ 1200V | 1.75V @ 10A | 10A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-31DQ04 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs31dq03-datasheets-1653.pdf | C-16, Axial | 10mm | 5.8mm | 5.8mm | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | WIRE | Single | 1 | 3.3A | 570mV | 450A | 1mA | ISOLATED | GENERAL PURPOSE | 80 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 450A | 1mA | 40V | 450A | Schottky | 40V | 3.3A | 1 | 1mA @ 40V | 570mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7545 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2002 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | MBR7545 | NOT SPECIFIED | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 45V | Schottky | 45V | 75A | 1 | 1mA @ 45V | 650mV @ 75A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12F20B BN R R | Vishay Semiconductor Opto Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | DO-203AA, DO-4, Stud | 12F20 | DO-203AA | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 1.26V @ 38A | 12A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR1045 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2012 | /files/vishaysemiconductordiodesdivision-mbr1045-datasheets-1667.pdf | 45V | 10A | TO-220-2 | 600pF | Contains Lead | 2 | 10A | Standard | 45V | MBR1045 | Single | TO-220AC | 10A | 840mV | 150A | 100μA | 45V | Fast Recovery =< 500ns, > 200mA (Io) | 150A | Schottky | 45V | 10A | 45V | 100μA @ 45V | 570mV @ 10A | 10A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5806URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 22 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD OVER NICKEL | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 25ns | Standard | 1A | 25pF @ 10V 1MHz | 150V | 1μA @ 150V | 875mV @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS21TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2012 | /files/diodesincorporated-bas217f-datasheets-6708.pdf | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | EAR99 | 2A | unknown | 8541.10.00.70 | 250V | DUAL | GULL WING | BAS21 | Single | 1 | Not Qualified | R-PDSO-G3 | 2.5A | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 50 ns | 50 ns | Standard | 200V | 200mA | 5pF @ 0V 1MHz | 100nA @ 200V | 1.25V @ 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4004/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Cut Tape (CT) | Not Applicable | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n400554-datasheets-0289.pdf | 400V | 1A | DO-204AL, DO-41, Axial | 15pF | Contains Lead | 2 | no | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 1N4004 | 2 | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | 1A | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 400V | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-95SQ015 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs95sq015-datasheets-1641.pdf | DO-204AR, Axial | 9.52mm | 6.35mm | 6.35mm | Lead Free | 2 | Unknown | 2 | EAR99 | No | WIRE | 95SQ015 | Single | 1 | 9A | 310mV | 2.9kA | 7mA | ISOLATED | GENERAL PURPOSE | 44 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2.9kA | 7mA | 15V | 2.9kA | Schottky | 15V | 9A | 1 | 7mA @ 15V | 310mV @ 9A | -55°C~100°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6077US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6074us-datasheets-1204.pdf | SQ-MELF, E | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 6A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30 ns | Standard | 100V | 6A | 1 | 1.3A | 5μA @ 100V | 1.76V @ 18.8A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6624US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | 1.8V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 20A | 60 ns | Standard | 900V | 1A | 1A | 10pF @ 10V 1MHz | 500nA @ 150V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard | 400V | 85A | 1800A | 1 | 400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR7540R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky, Reverse Polarity | 40V | 75A | 1 | 5mA @ 20V | 650mV @ 75A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-31DQ03 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs31dq03-datasheets-1653.pdf | 5.8mm | C-16, Axial | 10mm | 5.8mm | 5.8mm | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | WIRE | Single | 1 | 3.3A | 570mV | 450A | 1mA | ISOLATED | GENERAL PURPOSE | 80 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 450A | 1mA | 30V | 450A | 30 ns | Schottky | 30V | 3.3A | 1 | 1mA @ 30V | 570mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA25TB60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-hfa25tb60-datasheets-1619.pdf | 600V | 25A | TO-220-2 | Contains Lead | 2 | Standard | HFA25TB60 | Single | TO-220AC | 2V | 225A | Fast Recovery =< 500ns, > 200mA (Io) | 20μA | 600V | 225A | 600V | 75 ns | 75 ns | Standard | 600V | 25A | 600V | 20μA @ 600V | 1.7V @ 25A | 25A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8TQ100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 2012 | 100V | 8A | TO-220-2 | 500pF | 10.67mm | 9.02mm | 4.83mm | Contains Lead | 2 | Standard | 8TQ100 | Single | TO-220AC | 8A | 8A | 880mV | 100V | Fast Recovery =< 500ns, > 200mA (Io) | 850A | 550μA | 100V | 850A | Schottky | 100V | 8A | 100V | 550μA @ 100V | 720mV @ 8A | 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HFA08TB60 | Vishay Semiconductor Diodes Division | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-hfa08tb60-datasheets-1622.pdf | 600V | 8A | TO-220-2 | 10pF | Contains Lead | 2 | Standard | HFA08TB60 | Single | TO-220AC | 8A | 2.1V | 60A | Fast Recovery =< 500ns, > 200mA (Io) | 5A | 5μA | 60A | 600V | 55 ns | 55 ns | Standard | 600V | 8A | 600V | 5μA @ 600V | 1.7V @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR75100R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr75100r-datasheets-2404.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 75A | 1kA | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky, Reverse Polarity | 100V | 75A | 1 | 5mA @ 20V | 840mV @ 75A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR6060R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 60A | 700A | 1μA | SINGLE | ANODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 60V | Schottky, Reverse Polarity | 60V | 60A | 1 | 5mA @ 20V | 750mV @ 60A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DL4935-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dl493613-datasheets-1569.pdf | 200V | 1A | DO-213AB, MELF | 15pF | Contains Lead | 2 | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 235 | DL4935 | 2 | Single | 10 | 1 | Not Qualified | 1A | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 200 ns | Standard | 200V | 1A | 15pF @ 4V 1MHz | 5μA @ 200V | 1.2V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFR10M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard, Reverse Polarity | 100V | 85A | 1800A | 1 | 100V | 1.2V @ 267A | -65°C~180°C |
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