Products
Manufacturer
RFQ
NEWS
ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR1045HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR1045 | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 150A | Schottky | 45V | 10A | 1 | 100μA @ 45V | 840mV @ 20A | -65°C~150°C | |||||||||||||||||||||||||||
| FES8ATHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 125A | 50V | 35 ns | 35 ns | Standard | 50V | 8A | 1 | 8A | 10μA @ 50V | 950mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||
| BYS459F-1500E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bys459b1500e345-datasheets-3924.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | BYS459-1500 | Single | ITO-220AC | 1.3V | 130A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 130A | 1.5kV | 350 ns | 350 ns | Standard | 1.5kV | 6.5A | 1500V | 250μA @ 1500V | 1.3V @ 6.5A | 6.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| GURF5H60HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gurf5h60e345-datasheets-4028.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | 90A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||
| BYW29-150HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | BYW29-150 | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 8A | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 100A | 150V | 25 ns | 25 ns | Standard | 150V | 8A | 1 | 8A | 45pF @ 4V 1MHz | 10μA @ 150V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||
| SS10PH9HM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss10ph9hm386a-datasheets-4106.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | SS10PH9 | 3 | Common Anode | 1 | Rectifier Diodes | 10A | 880mV | 200A | 10μA | CATHODE | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 90V | 200A | TO-277A | Schottky | 90V | 10A | 1 | 270pF @ 4V 1MHz | 10μA @ 90V | 880mV @ 10A | -55°C~175°C | ||||||||||||||||||||||
| UH2C-E3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh2dhe3ai-datasheets-1364.pdf | DO-214AA, SMB | 2 | 22 Weeks | 2 | EAR99 | FREEWHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | UH2C | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 50A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 50A | 150V | 35 ns | 35 ns | Standard | 150V | 2A | 1 | 2A | 2μA @ 150V | 1.05V @ 2A | -55°C~175°C | ||||||||||||||||||||||
| FES16CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16C | 3 | Single | 1 | Rectifier Diodes | 16A | 975mV | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 250A | 150V | 35 ns | 35 ns | Standard | 150V | 16A | 1 | 10μA @ 150V | 975mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||
| BY229-600-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-220-2 | Lead Free | 2 | No | BY229-600 | Common Cathode | TO-220AC | 8A | 1.85V | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 600V | 100A | 600V | 145 ns | 145 ns | Standard | 600V | 8A | 600V | 10μA @ 600V | 1.85V @ 20A | 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| FES16HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16H | 3 | Single | 1 | Rectifier Diodes | 16A | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 500V | 250A | 500V | 50 ns | 50 ns | Standard | 500V | 16A | 1 | 10μA @ 500V | 1.5V @ 16A | -65°C~150°C | |||||||||||||||||||||||||
| GI1403HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi1404e345-datasheets-6839.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 150V | 35 ns | 35 ns | Standard | 150V | 8A | 1 | 8A | 5μA @ 150V | 975mV @ 8A | -65°C~150°C | |||||||||||||||||||||||||
| GI1401HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | SCHOTTKY | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi1404e345-datasheets-6839.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 125A | 50V | 35 ns | 35 ns | Standard | 50V | 8A | 1 | 8A | 5μA @ 50V | 975mV @ 8A | -65°C~150°C | ||||||||||||||||||||||||
| US1KHE3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-us1me361t-datasheets-6834.pdf | DO-214AC, SMA | 2 | No | US1K | Single | DO-214AC (SMA) | 1A | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 30A | 800V | 75 ns | 75 ns | Standard | 800V | 1A | 10pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.7V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| GI1402HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi1404e345-datasheets-6839.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 100V | 35 ns | 35 ns | Standard | 100V | 8A | 1 | 8A | 5μA @ 100V | 975mV @ 8A | -65°C~150°C | |||||||||||||||||||||||||
| GURF5H60-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gurf5h60e345-datasheets-4028.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | 5A | 1.8V | 90A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | |||||||||||||||||||||||
| UH2D-E3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh2dhe3ai-datasheets-1364.pdf | DO-214AA, SMB | 2 | 2 | EAR99 | FREEWHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | UH2D | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 50A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 50A | 200V | 35 ns | 35 ns | Standard | 200V | 2A | 1 | 2A | 2μA @ 200V | 1.05V @ 2A | -55°C~175°C | |||||||||||||||||||||||
| BY229B-800HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | No | BY229B-800 | Common Cathode | TO-263AB | 8A | 100A | 10μA | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 100A | 145ns | 145 ns | Standard | 800V | 8A | 800V | 10μA @ 800V | 1.85V @ 20A | 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| FES16FTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | FES16F | 3 | Single | 1 | Rectifier Diodes | 16A | 1.3V | 250A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | 250A | 300V | 50 ns | 50 ns | Standard | 300V | 16A | 1 | 10μA @ 300V | 1.3V @ 16A | -65°C~150°C | ||||||||||||||||||||||||
| BY229X-200HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | No | BY229X-200 | Single | ITO-220AC | 8A | 100A | 10μA | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 100A | 145 ns | 145 ns | Standard | 200V | 8A | 200V | 10μA @ 200V | 1.85V @ 20A | 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| SS8PH9HM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss8ph9m387a-datasheets-0796.pdf | TO-277, 3-PowerDFN | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | SS8PH9 | 3 | Common Anode | 1 | Rectifier Diodes | 8A | 900mV | 150A | 2μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 90V | 150A | TO-277A | Schottky | 90V | 8A | 1 | 8A | 140pF @ 4V 1MHz | 2μA @ 90V | 900mV @ 8A | -55°C~175°C | |||||||||||||||||||||
| BYS459-1500SE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bys459b1500se345-datasheets-3905.pdf | TO-220-2 | BYS459-1500 | Single | TO-220AC | 130A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 1.5kV | 220 ns | 220 ns | Standard | 1.5kV | 10A | 1500V | 250μA @ 1500V | 1.35V @ 6.5A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| M2035S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-m2035se34w-datasheets-3990.pdf | TO-220-3 | 3 | 19 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | R-PSFM-T3 | 20A | 200A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 35V | 200A | TO-220AB | Schottky | 35V | 20A | 1 | 200μA @ 35V | 700mV @ 20A | -55°C~150°C | ||||||||||||||||||||||||||
| BY229B-400-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | No | BY229B-400 | Common Cathode | TO-263AB | 8A | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 400V | 100A | 400V | 145 ns | 145 ns | Standard | 400V | 8A | 400V | 10μA @ 400V | 1.85V @ 20A | 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| BYV29-400HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv29400e345-datasheets-7319.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | BYV29-400 | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 8A | 110A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 110A | 400V | 50 ns | 50 ns | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.25V @ 8A | -40°C~150°C | |||||||||||||||||||||
| SS2P3LHE3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss2p3lm384a-datasheets-1949.pdf | DO-220AA | SS2P3 | Single | DO-220AA (SMP) | 50A | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 2A | 30V | 200μA @ 30V | 500mV @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| BY229X-800-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by229600he345-datasheets-3794.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | No | 8A | 600V | BY229X-800 | Single | ITO-220AC | 8A | 1.85V | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 100A | 800V | 145 ns | 145 ns | Standard | 800V | 8A | 800V | 10μA @ 800V | 1.85V @ 20A | 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| DTV56F-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-dtv56fe345-datasheets-3953.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | Single | ITO-220AC | 1.8V | 130A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 130A | 1.5kV | 135 ns | 135 ns | Standard | 1.5kV | 10A | 1500V | 100μA @ 1500V | 1.8V @ 6A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| FES8HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 500V | 125A | 500V | 50 ns | 50 ns | Standard | 500V | 8A | 1 | 8A | 10μA @ 500V | 1.5V @ 8A | -55°C~150°C | |||||||||||||||||||||||||
| SSC53LHE3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ssc54e357t-datasheets-2107.pdf | DO-214AB, SMC | 2 | No | SSC53L | Single | DO-214AB (SMC) | 5A | 450mV | 175A | 700μA | Fast Recovery =< 500ns, > 200mA (Io) | 700μA | 30V | 175A | Schottky | 30V | 5A | 30V | 700μA @ 30V | 450mV @ 5A | 5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| FES8GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 125A | 400V | 50 ns | 50 ns | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.3V @ 8A | -55°C~150°C |
