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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Frequency Band | Diode Capacitance-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N5807US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 6A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 5μA | 50V | 125A | 30 ns | Standard | 50V | 3A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 50V | 875mV @ 4A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| SDM30004R | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-sdm30004r-datasheets-1946.pdf | Die | Die | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 400V | 300A | 400V | 75μA @ 400V | 1.1V @ 300A | 300A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB2J30800L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-db2j30800l-datasheets-1948.pdf | SC-90, SOD-323F | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.60 | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 1A | 120μA | Small Signal =< 200mA (Io), Any Speed | SILICON | 1.3 ns | 1.3 ns | Schottky | 30V | 100mA | 2.9pF @ 10V 1MHz | VERY HIGH FREQUENCY | 120μA @ 30V | 420mV @ 100mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6628US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/590F | END | WRAP AROUND | Single | 1 | O-LELF-R2 | 1.75A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 660V | 75A | 30 ns | Standard | 660V | 1.75A | 1 | 4A | 40pF @ 10V 1MHz | 2μA @ 660V | 1.35V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VS-30WQ03FNPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-vs30wq03fntrlpbf-datasheets-1354.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | Unknown | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | e3 | MATTE TIN | SINGLE | GULL WING | 30WQ03 | 3 | Common Anode | 1 | R-PSSO-G2 | 3.5A | 450mV | 535A | 2mA | CATHODE | HIGH POWER | 4.7 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 535A | 2mA | 30V | 535A | TO-252AA | Schottky | 30V | 3.5A | 1 | 290pF @ 5V 1MHz | 2mA @ 30V | 450mV @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||
| JANTXV1N6622US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Single | D-5A | 1.2A | 1.6V | Fast Recovery =< 500ns, > 200mA (Io) | 660V | 20A | 30 ns | Standard | 660V | 1.2A | 660V | 500nA @ 660V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5820-B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/diodesincorporated-1n5822t-datasheets-2182.pdf | DO-201AD, Axial | 9.5mm | 5.3mm | 5.3mm | Lead Free | 2 | 8 Weeks | 1.09999g | 2 | no | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | not_compliant | 8541.10.00.80 | e3 | WIRE | 260 | 1N5820 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 3A | 850mV | ISOLATED | EFFICIENCY | 40 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 2mA | 20V | 80A | Schottky | 20V | 3A | 1 | 3A | 2mA @ 20V | 475mV @ 3A | -65°C~150°C | |||||||||||||||||||||||||||||
| FMY-1036S | Sanken | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/sanken-fmy1036s-datasheets-1872.pdf | TO-220-2 Full Pack | 12 Weeks | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | Standard | 600V | 3A | 600V | 10μA @ 600V | 1.15V @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB2J40600L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 2014 | /files/panasonicelectroniccomponents-db2j40600l-datasheets-1914.pdf | SC-90, SOD-323F | 2 | 12 Weeks | 2 | yes | EAR99 | unknown | 8541.10.00.60 | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 100mA | 600mV | Small Signal =< 200mA (Io), Any Speed | SILICON | 1A | 5μA | 40V | 1A | 900 ps | Schottky | 40V | 100mA | 2.2pF @ 10V 1MHz | VERY HIGH FREQUENCY | 5μA @ 40V | 600mV @ 100mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||
| JAN1N6622 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | O-LELF-R2 | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 660V | 0.5μA | 30 ns | Standard | 660V | 2A | 1 | 10pF @ 10V 1MHz | 500nA @ 660V | 1.6V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| FMXK-1086S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | /files/sanken-fmxk1086s-datasheets-1875.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 27 ns | Standard | 600V | 8A | 100A | 1 | 8A | 600V | 30μA @ 600V | 1.75V @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FMXA-1104S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/sanken-fmxa1104s-datasheets-1876.pdf | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | yes | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25 ns | Standard | 400V | 10A | 100A | 1 | 400V | 100μA @ 400V | 1.5V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| FMX-G26S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-fmxg26s-datasheets-1878.pdf | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | yes | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 600V | 10A | 100A | 1 | 600V | 100μA @ 600V | 1.5V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| MSG110 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-msg110-datasheets-1880.pdf | DO-204AL, DO-41, Axial | 2 | OBSOLETE (Last Updated: 2 weeks ago) | no | EAR99 | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 100V | 1A | 1A | 100V | 100μA @ 100V | 830mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| MSG105 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | DO-204AL, DO-41, Axial | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | 30 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 50V | 1A | 1A | 50V | 100μA @ 50V | 690mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| TRS6E65C,S1AQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2014 | TO-220-2 | 12 Weeks | TO-220-2L | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 35pF @ 650V 1MHz | 650V | 90μA @ 650V | 1.7V @ 6A | 6A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB2631100L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-db2631100l-datasheets-1883.pdf | SOD-882 | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.60 | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 200mA | 560mV | Small Signal =< 200mA (Io), Any Speed | SILICON | 1A | 5μA | 30V | 2.2 ns | Standard | 30V | 200mA | 6pF @ 10V 1MHz | VERY HIGH FREQUENCY | 5μA @ 30V | 560mV @ 200mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| MSG106 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-msg106-datasheets-0770.pdf | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 690mV | ISOLATED | 30 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | Schottky | 60V | 1A | 1A | 100μA @ 60V | 690mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| DB2J20500L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | SCHOTTKY | RoHS Compliant | /files/panasonicelectroniccomponents-db2j20500l-datasheets-1893.pdf | SC-90, SOD-323F | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.60 | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 500mA | 550mV | Small Signal =< 200mA (Io), Any Speed | SILICON | 3A | 10μA | 20V | 2.2 ns | Standard | 20V | 200mA | 6.1pF @ 10V 1MHz | VERY HIGH FREQUENCY | 50μA @ 6V | 390mV @ 200mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||
| MSG145 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | DO-204AL, DO-41, Axial | 2 | EAR99 | LOW FORWARD VOLTAGE | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 45V | 1A | 1A | 45V | 100μA @ 45V | 580mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| BAS16 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2001 | /files/panasonicelectroniccomponents-bas16-datasheets-1887.pdf | TO-236-3, SC-59, SOT-23-3 | BAS16 | SC-59-3 | Small Signal =< 200mA (Io), Any Speed | 3ns | Standard | 1.2pF @ 0V 1MHz | 80V | 100nA @ 80V | 1.25V @ 150mA | 200mA DC | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DA2610100L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-da2610100l-datasheets-1903.pdf | SOD-882 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.60 | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-XBCC-N2 | 500mA | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 3 ns | 3 ns | Standard | 80V | 100mA | 0.5A | 0.1A | 2pF @ 0V 1MHz | VERY HIGH FREQUENCY | 2pF | 100nA @ 80V | 1.2V @ 100mA | 100mA DC | 150°C Max | |||||||||||||||||||||||||||||||||||||||||
| MSG104 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | DO-204AL, DO-41, Axial | 2 | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | 30 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 1A | 1A | 40V | 100μA @ 40V | 690mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| MSG109 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 810mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | Schottky | 90V | 1A | 1A | 100μA @ 90V | 810mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SK38AE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-sk32btr13-datasheets-1214.pdf | DO-214AA, SMB | 2 | EAR99 | No | 8541.10.00.80 | SK38 | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 80V | 3A | 100A | 3A | 80V | 500μA @ 80V | 850mV @ 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF06SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2005 | /files/vishaysemiconductordiodesdivision-vs20etf06strlpbf-datasheets-2618.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 10 Weeks | Unknown | 2 | 20ETF06 | Single | D2PAK | 20A | 1.3V | 300A | 0.9 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 300A | 100μA | 600V | 300A | 600V | 160 ns | 160 ns | Standard | 600V | 20A | 600V | 100μA @ 600V | 1.05V @ 15A | 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-20TQ045STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20tq045spbf-datasheets-9658.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | 3 | yes | EAR99 | FREEWHEELING DIODE, HIGH RELIABILITY | Tin | e3 | GULL WING | 260 | 20TQ045 | 3 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 20A | 1.8kA | 2.7mA | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2.7mA | 45V | 1.8kA | Schottky | 45V | 20A | 1 | 2.7mA @ 45V | 570mV @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| JAN1N5618US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 2 μs | Standard | 600V | 1A | 1A | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||
| JANTXV1N5616US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 14 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||
| VS-STPS1045BTRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsstps1045btrpbf-datasheets-1508.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | SINGLE | GULL WING | STPS1045 | 3 | Common Anode | 1 | R-PSSO-G2 | 10A | 390A | 200μA | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 390A | Schottky | 45V | 10A | 1 | 200μA @ 45V | 570mV @ 10A | -40°C~175°C |
