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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Frequency Band | Diode Capacitance-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| JANTXV1N6622US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Single | D-5A | 1.2A | 1.6V | Fast Recovery =< 500ns, > 200mA (Io) | 660V | 20A | 30 ns | Standard | 660V | 1.2A | 660V | 500nA @ 660V | 1.4V @ 1.2A | 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5820-B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/diodesincorporated-1n5822t-datasheets-2182.pdf | DO-201AD, Axial | 9.5mm | 5.3mm | 5.3mm | Lead Free | 2 | 8 Weeks | 1.09999g | 2 | no | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | not_compliant | 8541.10.00.80 | e3 | WIRE | 260 | 1N5820 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 3A | 850mV | ISOLATED | EFFICIENCY | 40 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 2mA | 20V | 80A | Schottky | 20V | 3A | 1 | 3A | 2mA @ 20V | 475mV @ 3A | -65°C~150°C | ||||||||||||||||||||||||||
| 1N4248 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | 25A | 5 μs | Standard | 800V | 1A | 1A | 1μA @ 800V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| DB2J31100L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-db2j31100l-datasheets-1918.pdf | SC-90, SOD-323F | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.60 | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 200mA | 560mV | Small Signal =< 200mA (Io), Any Speed | SILICON | 1A | 5μA | 30V | 2.2 ns | Standard | 30V | 200mA | 6pF @ 10V 1MHz | VERY HIGH FREQUENCY | 5μA @ 30V | 560mV @ 200mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||
| DB2631400L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-db2631400l-datasheets-1922.pdf | SOD-882 | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.60 | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 30mA | 1V | Small Signal =< 200mA (Io), Any Speed | SILICON | 300nA | 30V | 1 ns | Standard | 30V | 30mA | 1.5pF @ 10V 1MHz | L B | 300nA @ 30V | 1V @ 30mA | 30mA DC | 125°C Max | |||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5621US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 14 Weeks | 2 | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | MIL-19500 | END | WRAP AROUND | 2 | Single | 1 | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 300 ns | Standard | 800V | 1A | 1A | 20pF @ 12V 1MHz | 500nA @ 800V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| JANTXV1N5804US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/477F | END | WRAP AROUND | 2 | Single | 1 | Qualified | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 35A | 25 ns | Standard | 100V | 1A | 1 | 25pF @ 10V 1MHz | 1μA @ 100V | 875mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| MSG110 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-msg110-datasheets-1880.pdf | DO-204AL, DO-41, Axial | 2 | OBSOLETE (Last Updated: 2 weeks ago) | no | EAR99 | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 100V | 1A | 1A | 100V | 100μA @ 100V | 830mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| MSG105 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | DO-204AL, DO-41, Axial | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | 30 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 50V | 1A | 1A | 50V | 100μA @ 50V | 690mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| TRS6E65C,S1AQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2014 | TO-220-2 | 12 Weeks | TO-220-2L | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 35pF @ 650V 1MHz | 650V | 90μA @ 650V | 1.7V @ 6A | 6A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB2631100L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-db2631100l-datasheets-1883.pdf | SOD-882 | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.60 | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 200mA | 560mV | Small Signal =< 200mA (Io), Any Speed | SILICON | 1A | 5μA | 30V | 2.2 ns | Standard | 30V | 200mA | 6pF @ 10V 1MHz | VERY HIGH FREQUENCY | 5μA @ 30V | 560mV @ 200mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||||
| MSG106 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-msg106-datasheets-0770.pdf | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 690mV | ISOLATED | 30 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | Schottky | 60V | 1A | 1A | 100μA @ 60V | 690mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| DB2J20500L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | SCHOTTKY | RoHS Compliant | /files/panasonicelectroniccomponents-db2j20500l-datasheets-1893.pdf | SC-90, SOD-323F | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.60 | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 500mA | 550mV | Small Signal =< 200mA (Io), Any Speed | SILICON | 3A | 10μA | 20V | 2.2 ns | Standard | 20V | 200mA | 6.1pF @ 10V 1MHz | VERY HIGH FREQUENCY | 50μA @ 6V | 390mV @ 200mA | 125°C Max | |||||||||||||||||||||||||||||||||||||||
| MSG145 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | DO-204AL, DO-41, Axial | 2 | EAR99 | LOW FORWARD VOLTAGE | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 45V | 1A | 1A | 45V | 100μA @ 45V | 580mV @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| BAS16 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2001 | /files/panasonicelectroniccomponents-bas16-datasheets-1887.pdf | TO-236-3, SC-59, SOT-23-3 | BAS16 | SC-59-3 | Small Signal =< 200mA (Io), Any Speed | 3ns | Standard | 1.2pF @ 0V 1MHz | 80V | 100nA @ 80V | 1.25V @ 150mA | 200mA DC | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DA2610100L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-da2610100l-datasheets-1903.pdf | SOD-882 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.60 | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-XBCC-N2 | 500mA | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 3 ns | 3 ns | Standard | 80V | 100mA | 0.5A | 0.1A | 2pF @ 0V 1MHz | VERY HIGH FREQUENCY | 2pF | 100nA @ 80V | 1.2V @ 100mA | 100mA DC | 150°C Max | ||||||||||||||||||||||||||||||||||||||
| MSG104 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | DO-204AL, DO-41, Axial | 2 | EAR99 | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | 30 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 1A | 1A | 40V | 100μA @ 40V | 690mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| MSG109 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 810mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | Schottky | 90V | 1A | 1A | 100μA @ 90V | 810mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FMY-1036S | Sanken | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/sanken-fmy1036s-datasheets-1872.pdf | TO-220-2 Full Pack | 12 Weeks | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | Standard | 600V | 3A | 600V | 10μA @ 600V | 1.15V @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB2J40600L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 2014 | /files/panasonicelectroniccomponents-db2j40600l-datasheets-1914.pdf | SC-90, SOD-323F | 2 | 12 Weeks | 2 | yes | EAR99 | unknown | 8541.10.00.60 | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 100mA | 600mV | Small Signal =< 200mA (Io), Any Speed | SILICON | 1A | 5μA | 40V | 1A | 900 ps | Schottky | 40V | 100mA | 2.2pF @ 10V 1MHz | VERY HIGH FREQUENCY | 5μA @ 40V | 600mV @ 100mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||
| JAN1N6622 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | O-LELF-R2 | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 660V | 0.5μA | 30 ns | Standard | 660V | 2A | 1 | 10pF @ 10V 1MHz | 500nA @ 660V | 1.6V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| FMXK-1086S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | /files/sanken-fmxk1086s-datasheets-1875.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 27 ns | Standard | 600V | 8A | 100A | 1 | 8A | 600V | 30μA @ 600V | 1.75V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| FMXA-1104S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/sanken-fmxa1104s-datasheets-1876.pdf | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | yes | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25 ns | Standard | 400V | 10A | 100A | 1 | 400V | 100μA @ 400V | 1.5V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| FMX-G26S | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-fmxg26s-datasheets-1878.pdf | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | yes | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 600V | 10A | 100A | 1 | 600V | 100μA @ 600V | 1.5V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-STPS1045BTRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsstps1045btrpbf-datasheets-1508.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | SINGLE | GULL WING | STPS1045 | 3 | Common Anode | 1 | R-PSSO-G2 | 10A | 390A | 200μA | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 390A | Schottky | 45V | 10A | 1 | 200μA @ 45V | 570mV @ 10A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||
| JAN1N5807 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 5μA | 50V | 125A | 30 ns | Standard | 50V | 6A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 50V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| 1N5821-B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-1n5822t-datasheets-2182.pdf | DO-201AD, Axial | 9.5mm | 5.3mm | 5.3mm | 2 | 1.09999g | 2 | no | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | not_compliant | 8541.10.00.80 | e3 | WIRE | 260 | 1N5821 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 3A | 900mV | ISOLATED | EFFICIENCY | 40 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 2mA | 30V | 80A | Schottky | 30V | 3A | 1 | 3A | 2mA @ 30V | 500mV @ 3A | -65°C~150°C | ||||||||||||||||||||||||||||
| 1N5818-B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2006 | /files/diodesincorporated-1n5819t-datasheets-9089.pdf | DO-204AL, DO-41, Axial | 4.7mm | 2.71mm | 2.71mm | 2 | 310.002035mg | 2 | no | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 260 | 1N5818 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 875mV | ISOLATED | 50 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25A | 1mA | 30V | 25A | Schottky | 30V | 1A | 1A | 110pF @ 4V 1MHz | 1mA @ 30V | 550mV @ 1A | -65°C~125°C | ||||||||||||||||||||||||||||||
| HS18135 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hs18140-datasheets-8423.pdf | HALF-PAK | 1 | 2 | EAR99 | REVERSE ENERGY TESTED | No | 8541.10.00.80 | UPPER | UNSPECIFIED | 1 | Single | 1 | Rectifier Diodes | S-XUFM-X1 | 180A | 700mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4mA | 35V | 2.5kA | Schottky | 35V | 180A | 1 | 7500pF @ 5V 1MHz | 4mA @ 35V | 700mV @ 180A | ||||||||||||||||||||||||||||||||||||||||
| JAN1N6627US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 75A | 30 ns | Standard | 440V | 1.75A | 1 | 4A | 40pF @ 10V 1MHz | 2μA @ 440V | 1.35V @ 1.2A | -65°C~150°C |
