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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Frequency Band | Diode Capacitance-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UGF12HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug12jte345-datasheets-6932.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 12A | 135A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 135A | 500V | 50 ns | 50 ns | Standard | 500V | 12A | 1 | 30μA @ 500V | 1.75V @ 12A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| UGB12HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug12jte345-datasheets-6932.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 12A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 135A | 50 ns | Standard | 500V | 12A | 1 | 30μA @ 500V | 1.75V @ 12A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| IDB15E60 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2005 | /files/infineontechnologies-idb15e60atma1-datasheets-4520.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | yes | EAR99 | compliant | 8541.10.00.80 | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 83.3W | 600V | 87ns | Standard | 60A | 1 | 29.2A | 600V | 50μA @ 600V | 2V @ 15A | 29.2A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| SD945-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sd930t-datasheets-6169.pdf | DO-201AD, Axial | 9.5mm | 5.3mm | 5.3mm | Lead Free | 2 | 1.09999g | 2 | EAR99 | LOW POWER LOSS, HIGH SURGE CAPABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 260 | SD945 | 2 | Single | 40 | 1 | Rectifier Diodes | 9A | 570mV | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2.15kA | 800μA | 45V | 2.15kA | 150 ns | Schottky | 45V | 9A | 1 | 9A | 900pF @ 4V 1MHz | 800μA @ 45V | 570mV @ 18A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| UGF15HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 15A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 135A | 50 ns | Standard | 500V | 15A | 1 | 30μA @ 500V | 1.75V @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| UG5JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug5hte345-datasheets-4419.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | 65A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 65A | 600V | 50 ns | 50 ns | Standard | 600V | 5A | 1 | 5A | 30μA @ 600V | 1.75V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| UGF5JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug5hte345-datasheets-4419.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | 1.75V | 65A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 65A | 600V | 50 ns | 50 ns | Standard | 600V | 5A | 1 | 5A | 30μA @ 600V | 1.75V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| UGF5HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug5hte345-datasheets-4419.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 65A | 50 ns | Standard | 500V | 5A | 1 | 5A | 30μA @ 500V | 1.75V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| SBR02U30LP-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | /files/diodesincorporated-sbr02u30lp7-datasheets-4041.pdf | 0402 (1006 Metric) | 2 | 6 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.70 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | SBR02U30 | 2 | Single | 40 | 1 | Rectifier Diodes | 200mA | 480mV | Small Signal =< 200mA (Io), Any Speed | SILICON | 5A | 50μA | 30V | 5A | Super Barrier | 30V | 200mA | 50μA @ 30V | 480mV @ 200mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| UGF5JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug5hte345-datasheets-4419.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 5A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 65A | 50 ns | Standard | 600V | 5A | 1 | 5A | 30μA @ 600V | 1.75V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| UG8BTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug8dte345-datasheets-6827.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 150A | 30 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| STTH10LCD06SB-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stth10lcd06fp-datasheets-2191.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STTH10 | 3 | Single | 30 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 100A | CATHODE | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 13μA | 600V | 50 ns | 230 ns | Standard | 600V | 10A | 1 | 5μA @ 600V | 2V @ 10A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||
| UF2007-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud, Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-uf2004t-datasheets-3085.pdf | 3.6mm | DO-204AC, DO-15, Axial | 7.6mm | 3.6mm | 3.6mm | Lead Free | 2 | 350.003213mg | 2 | no | EAR99 | No | 2A | 8541.10.00.80 | e3 | Matte Tin (Sn) | 1kV | WIRE | 260 | UF2007 | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 1.7V | 60A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 60A | 75 ns | 75 ns | Standard | 1kV | 2A | 1 | 1kV | 30pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.7V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||
| UH5JT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-uh5jte34w-datasheets-4116.pdf | TO-220-2 | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 8A | 3V | 60A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 60A | 600V | 40 ns | 40 ns | Standard | 600V | 8A | 1 | 5A | 5μA @ 600V | 3V @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| UHF10JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uhf10jte345-datasheets-4120.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | 10A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 90A | 1.8V | 25 ns | Standard | 600V | 10A | 1 | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| DA3X101K0L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/panasonicelectroniccomponents-da3x101k0l-datasheets-4111.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | 3 | 10 Weeks | No SVHC | 3 | EAR99 | unknown | 8541.10.00.60 | DUAL | GULL WING | NOT SPECIFIED | DA3X101 | Single | NOT SPECIFIED | 1 | 100mA | 1.2V | 500mA | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 500mA | 80V | 3 ns | 3 ns | Standard | 80V | 100mA | 1.2pF @ 0V 1MHz | VERY HIGH FREQUENCY | 1.2pF | 100nA @ 80V | 1.2V @ 100mA | 100mA DC | 150°C Max | |||||||||||||||||||||||||||||||||||||
| UGF15HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | 15A | 135A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 135A | 500V | 50 ns | 50 ns | Standard | 500V | 15A | 1 | 30μA @ 500V | 1.75V @ 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| BAT42XV2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | /files/onsemiconductor-bat43xv2-datasheets-2793.pdf | SC-79, SOD-523F | 1.3mm | 700μm | 900μm | 2 | 10mg | 2 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | 8541.10.00.80 | e3 | 200mW | DUAL | FLAT | BAT42X | Single | 1 | Rectifier Diodes | 200mA | 1V | 4A | 500nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 200mA | 10mA | 30V | 4A | 5 ns | 5 ns | Schottky | 30V | 200mA | 7pF @ 1V 1MHz | 500nA @ 25V | 1V @ 200mA | 125°C Max | ||||||||||||||||||||||||||||||||||||
| UGF15JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | 15A | 135A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 135A | 600V | 50 ns | 50 ns | Standard | 600V | 15A | 1 | 30μA @ 600V | 1.75V @ 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| SS0503EC-TR-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ss0503ectrh-datasheets-4065.pdf | 2-UDFN | Lead Free | 2 | SS0503 | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | Schottky | 30V | 500mA | 6pF @ 10V 1MHz | 30V | 100μA @ 15V | 560mV @ 500mA | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH06G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idh06g65c5xksa2-datasheets-8081.pdf | TO-220-2 | yes | EAR99 | 8541.10.00.80 | 3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 190pF @ 1V 1MHz | 650V | 210μA @ 650V | 1.7V @ 6A | 6A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R9G20611CSOO | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SRP600D-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp600ke373-datasheets-5216.pdf | P600, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SRP600D | 2 | Single | 1 | Rectifier Diodes | 6A | 1.3V | 300A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 300A | 150 ns | 150 ns | Standard | 200V | 6A | 1 | 6A | 10μA @ 200V | 1.3V @ 6A | -50°C~125°C | |||||||||||||||||||||||||||||||||||||||
| UG8ATHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug8dte345-datasheets-6827.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 150A | 30 ns | Standard | 50V | 8A | 1 | 8A | 10μA @ 50V | 1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| UG8GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv29400e345-datasheets-7319.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 110A | 50 ns | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.25V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| UG8FTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv29400e345-datasheets-7319.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | 110A | 50 ns | Standard | 300V | 8A | 1 | 8A | 10μA @ 300V | 1.25V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| UG8DTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug8dte345-datasheets-6827.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 150A | 30 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| UG8HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ugf8jte345-datasheets-7304.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 100A | 50 ns | Standard | 500V | 8A | 1 | 8A | 30μA @ 500V | 1.75V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| UG8CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug8dte345-datasheets-6827.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 150A | 30 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| UGB5HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug5hte345-datasheets-4419.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 5A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | 65A | 50 ns | Standard | 500V | 5A | 1 | 5A | 30μA @ 500V | 1.75V @ 5A | -55°C~150°C |
