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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| AR3PMHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pmm386a-datasheets-4797.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AR3PM | 3 | Common Anode | 1 | Rectifier Diodes | 3A | 50A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 340nA | 1kV | 50A | 1kV | TO-277A | 120 ns | 95 ns | Avalanche | 1kV | 1.6A | 1 | 34pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.9V @ 3A | 1.6A DC | -55°C~175°C | |||||||||||||||||||||||||||||
| VS-20ETS12FPPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 1999 | /files/vishaysemiconductordiodesdivision-vs20ets08fppbf-datasheets-4947.pdf | TO-220-2 Full Pack | 2 | 8 Weeks | 2 | EAR99 | UL APPROVED | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 20ETS12 | Single | 1 | 20A | 1.1V | 300A | ISOLATED | HIGH VOLTAGE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 300A | 100μA | 1.2kV | 300A | 1.2kV | Standard | 1.2kV | 20A | 1 | 1200V | 100μA @ 1200V | 1.1V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| VS-80EPF04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80epf02pbf-datasheets-4820.pdf | TO-247-3 | Common Anode | TO-247AC | 1kA | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 400V | 190ns | 190 ns | Standard | 400V | 80A | 400V | 100μA @ 400V | 1.25V @ 80A | 80A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| IDB23E60ATMA1 | Infineon Technologies | $0.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-idb23e60atma1-datasheets-4996.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | 8541.10.00.80 | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 115W | 600V | 120ns | Standard | 89A | 1 | 41A | 600V | 50μA @ 600V | 2V @ 23A | 41A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-80EPF06PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80epf02pbf-datasheets-4820.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Unknown | 3 | Common Anode | TO-247AC | 80A | 1.2V | 1kA | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 1kA | 100μA | 600V | 600V | 190 ns | 190 ns | Standard | 600V | 80A | 600V | 100μA @ 600V | 1.25V @ 80A | 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-10ETF06PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs10etf06pbf-datasheets-4929.pdf&product=vishaysemiconductordiodesdivision-vs10etf06pbf-6019568 | TO-220-2 | 10.54mm | 8.76mm | 4.57mm | Lead Free | 8 Weeks | 2 | EAR99 | No | 8541.10.00.80 | 10ETF06 | Single | 10A | 1.2V | 160A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 160A | 100μA | 600V | 160A | 600V | 145 ns | 145 ns | Standard | 10A | 1.2V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| VS-60CPF12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-60cpf12-datasheets-7230.pdf | TO-247-3 | TO-247AC | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | Standard | 1200V | 100μA @ 1200V | 1.4V @ 60A | 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AR3PMHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pmm386a-datasheets-4797.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AR3PM | 3 | Common Anode | 1 | Rectifier Diodes | 3A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 50A | TO-277A | 120 ns | Avalanche | 1kV | 1.6A | 1 | 34pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.9V @ 3A | 1.6A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||
| VS-80EPS08PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-80eps12-datasheets-7605.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | Common Anode | TO-247AC | 80A | 1.17V | 1.45kA | 0.2 °C/W | Standard Recovery >500ns, > 200mA (Io) | 1.45kA | 100μA | 800V | 1.45kA | 800V | Standard | 800V | 80A | 800V | 100μA @ 800V | 1.17V @ 80A | 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| AR3PJHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-ar3pdm386a-datasheets-5460.pdf | TO-277, 3-PowerDFN | Unknown | 3 | Tin | No | AR3PJ | Single | TO-277A (SMPC) | 3A | 1.6V | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 50A | 330nA | 600V | 50A | 600V | 140 ns | 122 ns | Avalanche | 600V | 1.8A | 44pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.6V @ 3A | 1.8A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-20ETS08FPPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 1999 | /files/vishaysemiconductordiodesdivision-vs20ets08fppbf-datasheets-4947.pdf | TO-220-2 Full Pack | 10.6mm | 8.9mm | 4.8mm | Lead Free | 2 | 8 Weeks | 2 | EAR99 | UL APPROVED | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 20ETS08 | Single | 1 | 20A | 1.1V | 300A | ISOLATED | HIGH VOLTAGE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 300A | 1mA | 800V | 300A | 800V | Standard | 800V | 20A | 1 | 100μA @ 800V | 1.1V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||
| AR4PDHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pdm386a-datasheets-6420.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AR4PD | 3 | Common Anode | 1 | Rectifier Diodes | 4A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 65A | TO-277A | 140 ns | Avalanche | 200V | 2A | 1 | 2A | 77pF @ 4V 1MHz | 10μA @ 200V | 1.6V @ 4A | 2A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||
| AR3PKHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pmm386a-datasheets-4797.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AR3PK | 3 | Common Anode | 1 | Rectifier Diodes | 3A | 50A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 340nA | 800V | 50A | 800V | TO-277A | 120 ns | 95 ns | Avalanche | 800V | 1.6A | 1 | 34pF @ 4V 1MHz | 10μA @ 800V | 1.9V @ 3A | 1.6A DC | -55°C~175°C | |||||||||||||||||||||||||||||||
| AR3PKHM3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pmm386a-datasheets-4797.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | DUAL | FLAT | AR3PK | 3 | Common Anode | 1 | Rectifier Diodes | 3A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 50A | TO-277A | 120 ns | Avalanche | 800V | 1.6A | 1 | 34pF @ 4V 1MHz | 10μA @ 800V | 1.9V @ 3A | 1.6A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-30CPF04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30epf06pbf-datasheets-5708.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | Common Anode | TO-247AC | 30A | 1.41V | 350A | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 350A | 100μA | 400V | 350A | 400V | 160 ns | 160 ns | Standard | 400V | 30A | 400V | 100μA @ 400V | 1.41V @ 30A | 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| BYV25FX-600,127 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-2 Full Pack, Isolated Tab | 2 | not_compliant | e3 | Tin (Sn) | IEC-60134 | NO | SINGLE | BYV25-600 | 150°C | 1 | R-PSFM-T2 | SINGLE | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50μA | TO-220AC | 35ns | Standard | 66A | 1 | 600V | 50μA @ 600V | 1.9V @ 5A | 5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| VS-30CPF10PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30epf12pbf-datasheets-6201.pdf | TO-247-3 | Common Anode | TO-247AC | 350A | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 1kV | 450 ns | 450 ns | Standard | 1kV | 30A | 1000V | 100μA @ 1000V | 1.41V @ 30A | 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF06FPPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vs20etf02fppbf-datasheets-4810.pdf | TO-220-2 Full Pack | 10.6mm | 8.9mm | 4.8mm | 2 | 8 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE, UL APPROVED | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 20ETF06 | Single | 1 | 20A | 1.67V | 300A | ISOLATED | FAST SOFT RECOVERY | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 100μA | 600V | 300A | 600V | 160 ns | 160 ns | Standard | 600V | 20A | 1 | 100μA @ 600V | 1.3V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||
| VS-8ETU04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs8etu04spbf-datasheets-9533.pdf | TO-220-2 | 10.54mm | 8.76mm | 4.57mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 8ETU04 | 3 | Single | 1 | Rectifier Diodes | 8A | 1.3V | 100A | CATHODE | ULTRA FAST RECOVERY | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 10μA | 400V | 100A | 400V | 60 ns | 60 ns | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.3V @ 8A | -65°C~175°C | |||||||||||||||||||||||||
| VS-20ETS12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2001 | /files/vishaysemiconductordiodesdivision-vs20ets12m3-datasheets-1329.pdf | TO-220-2 | 10.54mm | 8.76mm | 4.57mm | 8 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | 20ETS12 | 3 | Single | 20A | 1.1V | 300A | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | 300A | 100μA | 1.2kV | 300A | 1.2kV | Standard | 1.2kV | 20A | 1200V | 100μA @ 1200V | 1.1V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| VS-60CPF02PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs60cpf06pbf-datasheets-4775.pdf | TO-247-3 | Common Anode | TO-247AC | 830A | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 200V | 180 ns | 180 ns | Standard | 200V | 60A | 200V | 100μA @ 200V | 1.3V @ 60A | 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF10PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20etf12sm3-datasheets-5060.pdf | TO-220-2 | 8 Weeks | 2 | Tin | No | 20ETF10 | Single | TO-220AC | 20A | 1.31V | 355A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 1kV | 355A | 1kV | 160 ns | 400 ns | Standard | 1kV | 20A | 1000V | 100μA @ 1000V | 1.3V @ 20A | 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-20ETF04FPPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20etf02fppbf-datasheets-4810.pdf | TO-220-3 Full Pack | 2 | 8 Weeks | 2 | EAR99 | FREE WHEELING DIODE, UL APPROVED | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | 20ETF04 | Single | NOT APPLICABLE | 1 | 1.67V | 300A | ISOLATED | FAST SOFT RECOVERY | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 300A | 400V | 160 ns | 160 ns | Standard | 400V | 20A | 1 | 100μA @ 400V | 1.3V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| VS-10ETS08FPPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs10ets12fppbf-datasheets-5510.pdf | TO-220-2 Full Pack | 10.6mm | 8.9mm | 4.8mm | 2 | 8 Weeks | 2 | EAR99 | UL APPROVED | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 10ETS08 | Single | 1 | 10A | 1.1V | 200A | ISOLATED | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 50μA | 800V | 200A | 800V | Standard | 800V | 10A | 1 | 50μA @ 800V | 1.1V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||
| VS-20ETS08PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2001 | /files/vishaysemiconductordiodesdivision-vs20ets12m3-datasheets-1329.pdf | TO-220-2 | Lead Free | 2 | 8 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | 20ETS08 | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | 20A | 1.1V | 300A | CATHODE | HIGH VOLTAGE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 260A | 100μA | 800V | 300A | 800V | Standard | 800V | 20A | 1 | 100μA @ 1000V | 1.1V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||
| VS-20ETF12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2004 | /files/vishaysemiconductordiodesdivision-vs20etf12sm3-datasheets-5060.pdf | TO-220-2 | 10.54mm | 8.76mm | 4.57mm | 8 Weeks | Unknown | 2 | Tin | No | 20ETF12 | Single | TO-220AC | 20A | 1.31V | 355A | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 300A | 100μA | 1.2kV | 355A | 1.2kV | 400 ns | 400 ns | Standard | 1.2kV | 20A | 1200V | 100μA @ 1200V | 1.3V @ 20A | 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| VS-10ETS12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs10ets12pbf-datasheets-4888.pdf | TO-220-2 | 10.4902mm | 15.24mm | 4.6482mm | 8 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | 10ETS12 | Single | 1 | 10A | 975mV | 200A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 50μA | 1.2kV | 200A | 1.2kV | Standard | 1.2kV | 10A | 1 | 1200V | 50μA @ 1200V | 1.1V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||
| VS-20ETF12FPPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | TO-220-2 Full Pack | 2 | 8 Weeks | 2 | EAR99 | FREE WHEELING DIODE, UL APPROVED | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | 20ETF12 | Single | NOT APPLICABLE | 1 | 1.31V | ISOLATED | FAST SOFT RECOVERY | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 355A | 100μA | 400 ns | Standard | 1.2kV | 20A | 1 | 1200V | 100μA @ 1200V | 1.31V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-80EPF12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80epf10pbf-datasheets-4776.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | Common Anode | TO-247AC | 80A | 1.35V | 1.1kA | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 1.1kA | 100μA | 1.2kV | 1.1kA | 1.2kV | 480 ns | 480 ns | Standard | 1.2kV | 80A | 1200V | 100μA @ 1200V | 1.35V @ 80A | 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-10ETS08PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 1997 | /files/vishaysemiconductor-vs10ets08pbf-datasheets-1541.pdf | TO-220-2 | 10.66mm | 9.02mm | 4.82mm | Lead Free | 2 | 8 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 10ETS08 | Single | 1 | 10A | 1V | 200A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 175A | 50μA | 800V | 200A | 800V | Standard | 800V | 10A | 1 | 50μA @ 800V | 1.1V @ 10A | -40°C~150°C |
