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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Series | Mounting Type | Package / Case | Supplier Device Package | Speed | Diode Type | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Mfr | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5806E3 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | Axial | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 25pF @ 10V, 1MHz | 150 V | 1 μA @ 150 V | 875 mV @ 1 A | 1A | -65°C ~ 175°C | Microchip Technology | 25 ns | |||
| JAN1N5190/TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | Military, MIL-PRF-19500/420 | Through Hole | B, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 600 V | 2 μA @ 600 V | 1.5 V @ 9 A | 3A | -65°C ~ 175°C | Microchip Technology | 400 ns | |||
| 1N4944/TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | A, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 35pF @ 12V, 1MHz | 400 V | 1 μA @ 400 V | 1.3 V @ 1 A | 1A | -65°C ~ 175°C | Microchip Technology | 150 ns | |||
| JANTX1N5416/TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | Military, MIL-PRF-19500/411 | Through Hole | B, Axial | - | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 100 V | 1 μA @ 100 V | 1.5 V @ 9 A | 3A | -65°C ~ 175°C | Microchip Technology | 150 ns | |||
| BAS70-02V-G3-08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | SC-79, SOD-523 | SOD-523 | Small Signal =< 200mA (Io), Any Speed | Schottky | 1.5pF @ 0V, 1MHz | 70 V | 100 nA @ 50 V | 1 V @ 15 mA | 200mA | 125°C | Vishay General Semiconductor - Diodes Division | 5 ns | |||
| BAT54-02V-G3-08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | SC-79, SOD-523 | SOD-523 | Small Signal =< 200mA (Io), Any Speed | Schottky | 10pF @ 1V, 1MHz | 30 V | 2 μA @ 25 V | 800 mV @ 100 mA | 200mA | 125°C | Vishay General Semiconductor - Diodes Division | 5 ns | |||
| MSC050SDA120BCT | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | TO-247-3 | TO-247-3 | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 246pF @ 400V, 1MHz | 1200 V | 200 μA @ 1200 V | 1.8 V @ 50 A | 109A | -55°C ~ 175°C | Microchip Technology | 0 ns | |||
| VS-E5PX3006L-N3 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | FRED Pt? | Through Hole | TO-247-2 | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 600 V | 20 μA @ 600 V | 2.1 V @ 30 A | 30A | -55°C ~ 175°C | Vishay General Semiconductor - Diodes Division | 41 ns | |||
| BAS40L-HG3-08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount | 0402 (1006 Metric) | DFN1006-2A | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2.9pF @ 0V, 1MHz | 40 V | 10 μA @ 40 V | 1 V @ 40 mA | 200mA | 150°C | Vishay General Semiconductor - Diodes Division | ||||
| BAS40L-G3-08 | Vishay General Semiconductor - Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | 0402 (1006 Metric) | DFN1006-2A | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2.9pF @ 0V, 1MHz | 40 V | 10 μA @ 40 V | 1 V @ 40 mA | 200mA | 150°C | Vishay General Semiconductor - Diodes Division | ||||
| SB10-03A-2 | Sanyo |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | - | 30 V | 1 mA @ 30 V | 550 mV @ 1 A | 1A | 125°C | Sanyo | 30 ns | |||
| 1SS350-TB-E | Sanyo |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Sanyo | |||||||||||||||
| APT60D100SG/TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 1000 V | 250 μA @ 1 kV | 2.5 V @ 60 A | 60A | -55°C ~ 175°C | Microchip Technology | 280 ns | |||
| APT30D60SG/TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | D3PAK | - | Standard | - | 600 V | 30A | - | Microchip Technology | ||||||
| MSC030SDA120BCT | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | TO-247-3 | TO-247-3 | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 141pF @ 400V, 1MHz | 1200 V | 200 μA @ 1200 V | 1.8 V @ 30 A | 65A | -55°C ~ 175°C | Microchip Technology | 0 ns | |||
| DA573S6-TL-H | Sanyo |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Sanyo | |||||||||||||||
| APT60DQ120SG | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 100 μA @ 1200 V | 3.3 V @ 60 A | 60A | -55°C ~ 175°C | Microchip Technology | 320 ns | ||||
| APT75DQ60SG | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 25 μA @ 600 V | 2.5 V @ 75 A | 75A | -55°C ~ 175°C | Microchip Technology | 31 ns | ||||
| MSC030SDA070BCT | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | TO-247-3 | TO-247-3 | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 1200pF @ 1V, 1MHz | 700 V | 200 μA @ 700 V | 1.8 V @ 30 A | 60A | -55°C ~ 175°C | Microchip Technology | 0 ns | |||
| APT15DQ60SG | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 25 μA @ 600 V | 2.4 V @ 15 A | 15A | -55°C ~ 175°C | Microchip Technology | 21 ns | ||||
| APT15DQ120BHBG | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | TO-247-3 | TO-247-3 | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 1200 V | 100 μA @ 1200 V | 3.5 V @ 15 A | 15A | -55°C ~ 175°C | Microchip Technology | 240 ns | |||
| MSC050SDA070BCT | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | TO-247-3 | TO-247-3 | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 2034pF @ 1V, 1MHz | 700 V | 200 μA @ 700 V | 1.8 V @ 50 A | 88A | -55°C ~ 175°C | Microchip Technology | 0 ns | |||
| MSC050SDA170B | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | TO-247-3 | TO-247-3 | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 4450pF @ 1V, 1MHz | 1700 V | 200 μA @ 1700 V | 1.8 V @ 50 A | 136A | -55°C ~ 175°C | Microchip Technology | 0 ns | |||
| APT60D60SG | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | TO-247-2 | TO-247 | Fast Recovery =< 500ns, > 200mA (Io) | Standard | - | 250 μA @ 600 V | 1.8 V @ 60 A | 60A | -55°C ~ 175°C | Microchip Technology | 130 ns | ||||
| SB50-18 | Sanyo |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Sanyo | |||||||||||||||
| 1N647-1 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Standard Recovery >500ns, > 200mA (Io) | Standard | - | 400 V | 50 nA @ 400 V | 1 V @ 400 mA | 400mA | -65°C ~ 175°C | Microchip Technology | ||||
| JANTXV1N4148UR-1 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | Military, MIL-PRF-19500/116 | Surface Mount | DO-213AA | DO-213AA | Small Signal =< 200mA (Io), Any Speed | Standard | 4pF @ 0V, 1MHz | 75 V | 25 nA @ 20 V | 1.2 V @ 100 mA | 200mA | -65°C ~ 175°C | Microchip Technology | 20 ns | |||
| HRC0103ATRF-E | NEC Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | NEC Corporation | |||||||||||||||
| LYM676 | Osram |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||
| ILD2/214 | Siemens |
Min: 1 Mult: 1 |
0 | 0x0x0 |
