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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Test Current | Application | Breakdown Voltage | Speed | Diode Element Material | Clamping Voltage | Peak Pulse Current | Reverse Standoff Voltage | Peak Pulse Power | Direction | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Min Breakdown Voltage | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| GURB5H60-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gurf5h60e345-datasheets-4028.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 5A | 90A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | |||||||||||||||||||||||||||||
| MBRB10H90-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | yes | EAR99 | No | 8541.10.00.80 | 3 | Common Cathode | 10A | 880mV | 250A | 4.5μA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5μA | 90V | 250A | Schottky | 90V | 10A | 4.5μA @ 90V | 770mV @ 10A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| MP820-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 1A | 400V | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRD3CH42DF6 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2016 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB10H60-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.45mm | 4.83mm | 9.14mm | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB10H60 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 850mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||
| MPG06DHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mpg06ge354-datasheets-8621.pdf | MPG06, Axial | 2 | No | MPG06 | Single | MPG06 | 1A | 40A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 200V | 40A | 200V | 600 ns | 600 ns | Standard | 200V | 1A | 10pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| GI817HE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 30A | 800V | 750 ns | 750 ns | Standard | 800V | 1A | 1A | 10μA @ 800V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| M100G-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-m100je373-datasheets-5093.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | M100 | 2 | Single | 1 | Rectifier Diodes | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 50A | 400V | 2 μs | 2 μs | Standard | 400V | 1A | 1A | 1μA @ 400V | 1V @ 1A | -50°C~150°C | |||||||||||||||||||||||||||||||||
| GP15JHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15J | 2 | Single | 1 | Rectifier Diodes | 1.1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 3.5 μs | 3.5 μs | Standard | 600V | 1.5A | 1 | 5μA @ 600V | 1.1V @ 1.5A | -65°C~175°C | ||||||||||||||||||||||||||||||
| MBRB1650HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1650 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 50V | 150A | Schottky | 50V | 16A | 1 | 1mA @ 50V | 750mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| MBRB16H60-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB16H60 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 16A | 1 | 100μA @ 60V | 730mV @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| MBRB10H60HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10h60he3ap-datasheets-3581.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB10H60 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 850mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 710mV @ 10A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| GP15GHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 3.5 μs | 3.5 μs | Standard | 400V | 1.5A | 1 | 5μA @ 400V | 1.1V @ 1.5A | -65°C~175°C | |||||||||||||||||||||||||||||||
| MBRB1050-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.45mm | 4.83mm | 9.14mm | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1050 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 10A | 1 | 100μA @ 50V | 800mV @ 10A | -65°C~150°C | |||||||||||||||||||||||||||||
| MBRB7H50-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 600W | SINGLE | GULL WING | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 150A | 50μA | 1mA | EFFICIENCY | 333V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 698V | 860mA | 300V | 600W | Unidirectional | 50μA | 50V | 150A | Schottky | 485V | 50V | 7.5A | 1 | 50μA @ 50V | 730mV @ 7.5A | -65°C~175°C | ||||||||||||||||||||||||
| GP10QHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10Q | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 1A | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.2kV | 25A | 1.2kV | 3 μs | 3 μs | Standard | 1.2kV | 1A | 1A | 7pF @ 4V 1MHz | 1200V | 5μA @ 1200V | 1.2V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||
| MBRB7H35-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 750mV | 150A | 50μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 35V | 150A | Schottky | 35V | 7.5A | 1 | 50μA @ 35V | 630mV @ 7.5A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| MBRB16H50HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 16A | 1 | 100μA @ 50V | 730mV @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| MBRB760HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | 245 | MBRB760 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 150A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 60V | 150A | Schottky | 60V | 7.5A | 1 | 500μA @ 60V | 750mV @ 7.5A | -65°C~150°C | |||||||||||||||||||||||||||||
| MBRB16H50-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 50V | 150A | Schottky | 50V | 16A | 1 | 100μA @ 50V | 730mV @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| MBRB7H45HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 750mV | 150A | 50μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 45V | 150A | Schottky | 45V | 7.5A | 1 | 50μA @ 45V | 630mV @ 7.5A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| MBRB7H45-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 750mV | 150A | 50μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 45V | 150A | Schottky | 45V | 7.5A | 1 | 50μA @ 45V | 630mV @ 7.5A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| MBRB1650-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1650 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 50V | 150A | Schottky | 50V | 16A | 1 | 1mA @ 50V | 750mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| GP02-25HE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp0240e354-datasheets-3946.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.70 | e3 | WIRE | GP02-25 | 2 | Single | 1 | Rectifier Diodes | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2.5kV | 15A | 2.5kV | 2 μs | 2 μs | Standard | 2.5kV | 250mA | 2500V | 5μA @ 2500V | 3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| GP10KEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | No | GP10K | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 800V | 30A | 800V | 3μs | 3 μs | Standard | 800V | 1A | 7pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.2V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| GP10MHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10M | 2 | Single | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 30A | 1kV | 3 μs | 3 μs | Standard | 1kV | 1A | 1A | 7pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||
| M100M-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-m100je373-datasheets-5093.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | M100 | 2 | Single | 1 | Rectifier Diodes | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 50A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 1μA @ 1000V | 1.1V @ 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||
| MBRB1035-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1035 | 3 | Common Cathode | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.06kA | 100μA | 35V | 150A | Schottky | 35V | 10A | 1 | 100μA @ 35V | 840mV @ 20A | -65°C~150°C | |||||||||||||||||||||||||||||
| GP30AHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 125A | 50V | 5 μs | 5 μs | Standard | 50V | 3A | 1 | 3A | 5μA @ 50V | 1.2V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||
| GP20B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp20ge373-datasheets-5168.pdf | DO-201AA, DO-27, Axial | 20 | Single | GP20 | 65A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 100V | 5 μs | 5 μs | Standard | 100V | 2A | 100V | 5μA @ 100V | 1.2V @ 2A | 2A | -65°C~150°C |
