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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-8EWS16SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ews16strpbf-datasheets-8243.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | unknown | SINGLE | GULL WING | Common Anode | 1 | R-PSSO-G2 | 8A | 1.1V | 200A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 1.6kV | 200A | 1.6kV | TO-252AA | Standard | 1.6kV | 8A | 1 | 8A | 1600V | 50μA @ 1600V | 1.1V @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| S5BHE3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s5me357t-datasheets-1264.pdf | DO-214AB, SMC | 2 | No | S5B | Single | DO-214AB (SMC) | 5A | 100A | Standard Recovery >500ns, > 200mA (Io) | 10μA | 100V | 100A | 100V | 2.5 μs | 2.5 μs | Standard | 100V | 5A | 40pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.15V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-MBR1045-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | TO-220-2 | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-220AC | Schottky | 45V | 10A | 150A | 1 | 600pF @ 5V 1MHz | 45V | 100μA @ 45V | 840mV @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-8EWS12SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ews12strpbf-datasheets-1679.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | No | Common Anode | TO-252, (D-Pak) | 8A | 1.1V | 200A | Standard Recovery >500ns, > 200mA (Io) | 50μA | 1.2kV | 200A | 1.2kV | Standard | 1.2kV | 8A | 1200V | 50μA @ 1200V | 1.1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBRB1045TRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbrb1035pbf-datasheets-9801.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | 3 | yes | EAR99 | FREEWHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | 3 | Common Cathode | 10 | 1 | Rectifier Diodes | R-PSSO-G2 | 20A | 150A | 100μA | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 1.06kA | Schottky | 45V | 10A | 1 | 600pF @ 5V 1MHz | 200μA @ 35V | 840mV @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||
| VS-8TQ080GSTRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq100pbf-datasheets-9643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 500pF @ 5V 1MHz | 80V | 280μA @ 80V | 720mV @ 8A | 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8TQ080GPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq100pbf-datasheets-9643.pdf | TO-220-2 | 2 | EAR99 | FREE WHEELING DIODE | unknown | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | NOT APPLICABLE | 175°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80V | 280μA | TO-220AC | Schottky | 850A | 1 | 500pF @ 5V 1MHz | 100V | 280μA @ 100V | 720mV @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VT3080SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vit3080sm34w-datasheets-3827.pdf | TO-220-3 | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | MATTE TIN | SINGLE | 3 | Common Anode | 1 | Not Qualified | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 80V | 200A | TO-220AB | Schottky | 80V | 30A | 1 | 1mA @ 80V | 950mV @ 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| VS-MBR1035-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | TO-220-2 | 10.66mm | 9.02mm | 4.82mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 10A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 100μA | 35V | Schottky | 35V | 10A | 1 | 600pF @ 5V 1MHz | 100μA @ 35V | 570mV @ 10A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| HCR4148M | TT Electronics/Optek Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tray | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 2007 | /files/ttelectronicsoptektechnology-hcr4148d-datasheets-7790.pdf&product=ttelectronicsoptektechnology-hcr4148m-6020977 | 3-SMD, No Lead | 3.175mm | 1.3716mm | 2.667mm | 13 Weeks | 3 | Single | 300mW | 3-SMD | Small Signal =< 200mA (Io), Any Speed | 5 ns | Standard | 100V | 200mA | 2.8pF @ 1.5V 1MHz | 100V | 500nA @ 75V | 1.2V @ 100mA | 200mA DC | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VT760HM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vit760m34w-datasheets-2582.pdf | TO-220-2 | 2 | 19 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 1 | Not Qualified | 7.5A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | 60V | 100A | Schottky | 60V | 7.5A | 1 | 700μA @ 60V | 800mV @ 7.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| VS-HFA08TB60-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vshfa08tb60pbf-datasheets-8158.pdf | TO-220-2 | 8.89mm | 15.25mm | 4.65mm | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | 14W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 8A | 1.4V | 60A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60A | 5μA | 600V | 60A | 55 ns | 18 ns | Standard | 600V | 8A | 1 | 8A | 600V | 5μA @ 600V | 1.7V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||
| VS-HFA08TB120-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vshfa08tb120pbf-datasheets-9899.pdf | TO-220-2 | 2 | 13 Weeks | 2 | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 4.3V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 73.5W | 130A | 10μA | 95 ns | Standard | 1.2kV | 8A | 1 | 8A | 1200V | 10μA @ 1200V | 3.3V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VS-30ETH06-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | TO-220AC | 31 ns | Standard | 600V | 30A | 200A | 1 | 600V | 50μA @ 600V | 2.6V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-MBR1635-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbr1635pbf-datasheets-7974.pdf | TO-220-2 | 10.66mm | 9.02mm | 4.82mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 16A | 630mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.8kA | 200μA | 35V | 1.8kA | Schottky | 35V | 16A | 1 | 1400pF @ 5V 1MHz | 200μA @ 35V | 630mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-25ETS12SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs25ets08strlpbf-datasheets-8050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | yes | EAR99 | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 300A | CATHODE | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | 1.2kV | Standard | 1.2kV | 25A | 1 | 1200V | 100μA @ 1200V | 1.14V @ 25A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-20ETS16PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs20ets16m3-datasheets-5137.pdf | TO-220-3 | 2 | 8 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | 1.6kV | 300A | Standard | 1.6kV | 20A | 1 | 1600V | 100μA @ 1600V | 1.1V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| VS-30ETH06FP-F3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs30eth06fpf3-datasheets-8423.pdf | TO-220-2 Full Pack | 2 | 7 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | ISOLATED | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | 220A | 23 ns | Standard | 600V | 30A | 1 | 50μA @ 600V | 2.6V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-6TQ035-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6tq035pbf-datasheets-8213.pdf | TO-220-2 | 10.54mm | 8.76mm | 4.57mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 6A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 690A | 800μA | 35V | Schottky | 35V | 6A | 1 | 400pF @ 5V 1MHz | 800μA @ 35V | 600mV @ 6A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| VS-STPS20L15GTRRP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsstps20l15gpbf-datasheets-9754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | 3 | EAR99 | HIGH RELIABILITY | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 20A | 700A | 10mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10mA | 15V | 700A | Schottky | 15V | 20A | 1 | 2000pF @ 5V 1MHz | 10mA @ 15V | 520mV @ 40A | -55°C~125°C | |||||||||||||||||||||||||||||||||||
| RGP20JHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp20be373-datasheets-5121.pdf | DO-201AA, DO-27, Axial | 20 | RGP20J | Single | GP20 | 80A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 600V | 250 ns | 250 ns | Standard | 600V | 2A | 600V | 5μA @ 600V | 1.3V @ 2A | 2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8ETH03-1PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8eth03strrpbf-datasheets-8162.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 7 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | R-PSIP-T3 | 8A | 1.25V | 100A | HFRHP | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 300V | 100A | 27 ns | 35 ns | Standard | 300V | 8A | 1 | 8A | 300V | 20μA @ 300V | 1.25V @ 8A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| VS-10ETS10SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10ets08strlpbf-datasheets-8050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | CATHODE | HIGH VOLTAGE POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 1.1kV | 200A | Standard | 1kV | 10A | 1 | 1000V | 50μA @ 1000V | 1.1V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| VS-MBRD320TRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbrd340trrpbf-datasheets-1407.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | e3 | MATTE TIN | SINGLE | GULL WING | 3 | Common Anode | 1 | R-PSSO-G2 | 3A | 490A | 200μA | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 20V | 490A | TO-252AA | Schottky | 20V | 3A | 1 | 189pF @ 5V 1MHz | 200μA @ 20V | 600mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-8EWF06SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ewf04strrpbf-datasheets-1350.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 3 | EAR99 | FREEWHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | SINGLE | GULL WING | 260 | Common Anode | 1 | R-PSSO-G2 | 8A | 1.2V | 200A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 100μA | 600V | 200A | 600V | TO-252AA | 200ns | 140 ns | Standard | 600V | 8A | 1 | 8A | 100μA @ 600V | 1.2V @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||
| VS-20TQ035SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs20tq045spbf-datasheets-9658.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 11 Weeks | 3 | yes | EAR99 | Tin | 3 | Single | 20A | 570mV | Fast Recovery =< 500ns, > 200mA (Io) | 1.8kA | 2.7mA | 35V | 1.8kA | Schottky | 35V | 20A | 1400pF @ 5V 1MHz | 2.7mA @ 35V | 570mV @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWF02SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ewf04strrpbf-datasheets-1350.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Common Anode | TO-252, (D-Pak) | 8A | 200A | Standard Recovery >500ns, > 200mA (Io) | 100μA | 200V | 200A | 200V | 140 ns | 140 ns | Standard | 200V | 8A | 200V | 100μA @ 200V | 1.2V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8ETH06-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs8etl06fpn3-datasheets-4309.pdf | TO-220-2 | 11 Weeks | EAR99 | unknown | 8541.10.00.80 | 175°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | Standard | 600V | 8A | 90A | 8A | 600V | 50μA @ 600V | 2.4V @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8TQ100GPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq100pbf-datasheets-9643.pdf | TO-220-2 | 2 | EAR99 | FREE WHEELING DIODE | unknown | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | NOT APPLICABLE | 175°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 280μA | TO-220AC | Schottky | 850A | 1 | 500pF @ 5V 1MHz | 100V | 280μA @ 100V | 720mV @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-8TQ080-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs8tq100pbf-datasheets-9643.pdf | TO-220-2 | 10.67mm | 9.02mm | 4.83mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 8A | 880mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 850A | 550μA | 80V | 850A | Schottky | 80V | 8A | 1 | 720mV @ 8A | -65°C~180°C |
