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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-31DQ09G | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs31dq10gtr-datasheets-8118.pdf | DO-201AD, Axial | 2 | EAR99 | FREE WHEELING DIODE | unknown | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | 100μA | Schottky | 370A | 1 | 110pF @ 5V 1MHz | 90V | 100μA @ 90V | 850mV @ 3A | 3.3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VSB3200S-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount, Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | DO-204AC, DO-15, Axial | 2 | 17 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 3A | 1.4V | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 200V | 50A | Schottky | 200V | 3A | 1 | 3A | 170pF @ 4V 1MHz | 50μA @ 200V | 1.4V @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| VS-50SQ060G | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50sq080gtr-datasheets-8070.pdf | DO-204AR, Axial | 2 | 2 | EAR99 | FREE WHEELING DIODE | No | WIRE | Single | 1 | 5A | 1.9kA | 150μA | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 60V | 1.9kA | Schottky | 60V | 5A | 1 | 500pF @ 5V 1MHz | 150μA @ 60V | 660mV @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VSB3200-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsb3200m354-datasheets-5740.pdf | DO-201AD, Axial | 17 Weeks | 2 | Single | DO-201AD | 3A | 1.2V | Fast Recovery =< 500ns, > 200mA (Io) | 60μA | 200V | 90A | Schottky | 200V | 3A | 175pF @ 4V 1MHz | 200V | 60μA @ 200V | 1.2V @ 3A | 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-10ETF02STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf06spbf-datasheets-1614.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | Common Anode | D2PAK | 10A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 200V | 160A | 200ns | Standard | 200V | 10A | 200V | 100μA @ 200V | 1.2V @ 10A | 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FMCA-22065 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/sanken-fmca22065-datasheets-0096.pdf | TO-220-2 Full Pack | Lead Free | 3 | 12 Weeks | EAR99 | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | ISOLATED | EFFICIENCY | No Recovery Time > 500mA (Io) | 200μA | TO-220AB | 0ns | Silicon Carbide Schottky | 600V | 20A | 40A | 1 | 10A | 600V | 15mA @ 600V | 1.5V @ 10A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-10ETF10STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf10spbf-datasheets-8277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 185A | 310 ns | Standard | 1kV | 10A | 1 | 1000V | 100μA @ 1000V | 1.33V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||
| VS-10ETS08STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10ets08strlpbf-datasheets-8050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | Tin | Common Anode | TO-263AB (D2PAK) | 10A | 200A | Standard Recovery >500ns, > 200mA (Io) | 50μA | 900V | 200A | 800V | Standard | 800V | 10A | 800V | 500μA @ 800V | 1.1V @ 10A | 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VI30100SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v30100sm34w-datasheets-7373.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSIP-T3 | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 100V | 250A | Schottky | 100V | 30A | 1 | 1mA @ 100V | 910mV @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-10ETF02STRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-vs10etf06spbf-datasheets-1614.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 1.2V | 160A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 160A | 100μA | 200V | 160A | 200V | 145 ns | 145 ns | Standard | 200V | 10A | 1 | 100μA @ 200V | 1.2V @ 10A | -40°C~150°C | ||||||||||||||||||||||||
| VS-STT250M14MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30100SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v30100sm34w-datasheets-7373.pdf | TO-220-3 | 3 | 19 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 100V | 250A | TO-220AB | Schottky | 100V | 30A | 1 | 350μA @ 100V | 1V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| VS-10ETF04STRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf06spbf-datasheets-1614.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 400V | 160A | 200 ns | Standard | 400V | 10A | 1 | 100μA @ 400V | 1.2V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||
| VSB2200S-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsb2200sm354-datasheets-5683.pdf | DO-204AL, DO-41, Axial | 17 Weeks | 2 | Single | DO-204AL (DO-41) | 2A | Fast Recovery =< 500ns, > 200mA (Io) | 40μA | 200V | 40A | Schottky | 200V | 2A | 110pF @ 4V 1MHz | 200V | 40μA @ 200V | 1.23V @ 2A | 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MURB820TRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vsmurb820pbf-datasheets-9477.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | MATTE TIN (SN) - WITH NICKEL (NI) BARRIER | GULL WING | MURB820 | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 975mV | 100A | CATHODE | ULTRA FAST RECOVERY HIGH POWER | 0.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 100A | 200V | 20 ns | 35 ns | Standard | 200V | 8A | 1 | 8A | 5μA @ 200V | 975mV @ 8A | -65°C~175°C | |||||||||||||||||||||||||||
| VS-10ETF06STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf06spbf-datasheets-1614.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | 8541.10.00.80 | e3 | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 160A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 600V | 160A | 600V | 200 ns | 50 ns | Standard | 600V | 10A | 1 | 100μA @ 600V | 1.2V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||
| VS-20MQ040NPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20mq040ntrpbf-datasheets-9946.pdf | DO-214AC, SMA | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | 120A | 500μA | ISOLATED | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 2.1A | 1 | 500μA @ 40V | 690mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-10ETS12STRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10ets08strlpbf-datasheets-8050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | yes | EAR99 | Tin | 8541.10.00.80 | e3 | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 1.1V | 200A | CATHODE | HIGH VOLTAGE POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 1.3kV | 200A | 1.2kV | Standard | 1.2kV | 10A | 1 | 1200V | 500μA @ 1200V | 1.1V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||
| VSB1545S-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsb1545se354-datasheets-8392.pdf | DO-201AD, Axial | 2 | 17 Weeks | EAR99 | LOW POWER LOSS | unknown | 8541.10.00.80 | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | Schottky | 45V | 7A | 200A | 1 | 7A | 1995pF @ 4V 1MHz | 45V | 1mA @ 45V | 590mV @ 15A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| V20150SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20150sm34w-datasheets-3848.pdf | TO-220-3 | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 150V | 160A | TO-220AB | Schottky | 150V | 20A | 1 | 250μA @ 150V | 1.43V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| VS-SDD250M16MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-150SQ045 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs150sq045tr-datasheets-7996.pdf | DO-204AR, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | Schottky | 2150A | 1 | 15A | 900pF @ 5V 1MHz | 45V | 1.75mA @ 45V | 540mV @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-10ETS10STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10ets08strlpbf-datasheets-8050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | CATHODE | HIGH VOLTAGE POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 1.1kV | 200A | Standard | 1kV | 10A | 1 | 1000V | 50μA @ 1000V | 1.1V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| VS-10ETF12STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf10spbf-datasheets-8277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 3 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 160A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1.2kV | 160A | 1.2kV | 310 ns | 310 ns | Standard | 1.2kV | 10A | 1 | 1200V | 100μA @ 1200V | 1.33V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||
| VS-STT250M16MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30BQ100GPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30bq100gtrpbf-datasheets-8106.pdf | DO-214AB, SMC | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | DUAL | C BEND | 2 | Single | 1 | Rectifier Diodes | 4A | 900mV | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 800A | Schottky | 100V | 3A | 1 | 4A | 115pF @ 5V 1MHz | 100μA @ 100V | 790mV @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| VS-150SQ035 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs150sq045tr-datasheets-7996.pdf | DO-204AR, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35V | Schottky | 2150A | 1 | 15A | 900pF @ 5V 1MHz | 35V | 1.75mA @ 35V | 540mV @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VS-50SQ080G | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50sq080gtr-datasheets-8070.pdf | DO-204AR, Axial | 2 | EAR99 | FREE WHEELING DIODE | NO | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80V | 150μA | Schottky | 1900A | 1 | 500pF @ 5V 1MHz | 80V | 150μA @ 60V | 660mV @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-STD170M12MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSB20L45-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsb20l45m354-datasheets-6566.pdf | P600, Axial | 2 | 17 Weeks | EAR99 | LOW POWER LOSS | unknown | 8541.10.00.80 | IEC-61000-4-2; IEC-61215 | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 45V | 6.5A | 250A | 1 | 7.5A | 2050pF @ 4V 1MHz | 45V | 1.2mA @ 45V | 580mV @ 20A | -40°C~150°C |
