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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Number of Pins | Number of Drivers | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Quiescent Current | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-300UR60A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vs300ur60a-datasheets-5951.pdf | DO-205AB, DO-9, Stud | 1 | 11 Weeks | Unknown | 2 | No | Nickel (Ni) | UPPER | HIGH CURRENT CABLE | Single | 1 | O-MUPM-H1 | 300A | 1.4V | 6.85kA | GENERAL PURPOSE | 0.08 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 6.85kA | 40mA | 600V | 6.85kA | 600V | Standard, Reverse Polarity | 600V | 300A | 1 | 40mA @ 600V | 1.4V @ 942A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GB05MPS33-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | RoHS Compliant | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 14 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 288pF @ 1V 1MHz | 3300V | 10μA @ 3kV | 3V @ 5A | 14A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60D60BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/microsemicorporation-apt60d60bg-datasheets-5958.pdf&product=microsemicorporation-apt60d60bg-5831749 | 600V | 60A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | Tin | No | 8541.10.00.80 | e1 | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 60A | 60A | 1.6V | 600A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 600A | 130 ns | 40 ns | Standard | 600V | 60A | 1 | 600V | 250μA @ 600V | 1.8V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| IDW40G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idw40g65c5xksa1-datasheets-5961.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 38.000013g | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | 183W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 40A | 1.5V | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 182A | 220μA | 650V | 182A | 0 s | Silicon Carbide Schottky | 650V | 40A | 1 | 650V | 1140pF @ 1V 1MHz | 220μA @ 650V | 1.7V @ 40A | 40A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SM74611KTTR | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 125°C | -40°C | 0A | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 2 | 6 Weeks | 1.946308g | No SVHC | 30V | 100mV | 3 | 1 | ACTIVE (Last Updated: 3 days ago) | yes | 4.44mm | EAR99 | No | 30V | e3 | Matte Tin (Sn) | 575mW | GULL WING | 245 | SM74611 | Single | 1 | Rectifier Diodes | 125°C | 15A | 8A | CATHODE | GENERAL PURPOSE | 0A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 300nA | 28V | 28V | Standard | 30V | 15A | 1 | 300nA @ 28V | 26mV @ 8A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N5822US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5822us-datasheets-5973.pdf | SQ-MELF, B | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | 3A | 700mV | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 40V | Schottky | 40V | 3A | 1 | 3A | 100μA @ 40V | 500mV @ 3A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTDF400U120G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 1999 | /files/microsemicorporation-aptdf400u120g-datasheets-5977.pdf | LP4 | 4 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 4 | Common Cathode | 1 | Rectifier Diodes | 450A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2.5mA | 1.2kV | 5kA | 110 ns | Standard | 1.2kV | 450A | 1 | 1200V | 2.5mA @ 1200V | 2.5V @ 500A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 122NQ030-1 | SMC Diode Solutions | $34.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | HALF-PAK | 16 Weeks | PRM1-1 (Half Pak Module) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 7400pF @ 5V 1MHz | 30V | 10mA @ 30V | 490mV @ 120A | 120A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-80APF12-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs80apf12m3-datasheets-5895.pdf | TO-247-3 | 3 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 480 ns | Standard | 1.2kV | 80A | 1250A | 1 | 1200V | 100μA @ 1200V | 1.35V @ 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPS20M60SG-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stps20m60sgtr-datasheets-5648.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 11 Weeks | 3 | ACTIVE (Last Updated: 6 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STPS20 | 3/2 | Common Anode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 90A | 500mV | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 125μA | 60V | 600A | Schottky | 60V | 20A | 1 | 125μA @ 60V | 565mV @ 20A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS220AMC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2008 | /files/rohm-scs220amc-datasheets-2212.pdf | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | 2 | EAR99 | not_compliant | 8541.10.00.80 | 40W | NOT SPECIFIED | SCS220 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 20A | 1.55V | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 260A | 400μA | 650V | 0ns | Silicon Carbide Schottky | 650V | 20A | 1 | 730pF @ 1V 1MHz | 400μA @ 600V | 1.55V @ 20A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSDI60-18A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsdi6018a-datasheets-5777.pdf | 1.8kV | 63A | TO-247-2 | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 63A | 63A | 4.1V | 540A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 1.8kV | 540A | 1.8kV | 300 ns | 300 ns | Standard | 1.8kV | 63A | 1 | 1800V | 2mA @ 1800V | 4.1V @ 70A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D100BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf&product=microsemicorporation-apt30d100bg-5831721 | 1kV | 30A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | APT30D100 | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 30A | 2.3V | 210A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 1kV | 210A | 290 ns | 290 ns | Standard | 1kV | 30A | 1 | 1kV | 1000V | 250μA @ 1000V | 2.3V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| APT60S20BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt60s20bg-datasheets-5782.pdf | 200V | 75A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | Standard | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 75A | 75A | 830mV | 600A | CATHODE | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 200V | 600A | 55 ns | 55 ns | Schottky | 200V | 75A | 1 | 200V | 1mA @ 200V | 900mV @ 60A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| IDH05G120C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/infineontechnologies-idh05g120c5xksa1-datasheets-5787.pdf | TO-220-2 | Lead Free | 2 | 16 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | Common Cathode | NOT SPECIFIED | 1 | 19.1A | EFFICIENCY | No Recovery Time > 500mA (Io) | 109W | 33μA | 1.2kV | 59A | 0ns | Silicon Carbide Schottky | 1.2kV | 5A | 1 | 301pF @ 1V 1MHz | 1200V | 33μA @ 1200V | 1.8V @ 5A | 5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDM05G120C5XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/infineontechnologies-idm05g120c5xtma1-datasheets-5677.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | 2 | yes | EAR99 | PD-CASE | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | Common Cathode | NOT SPECIFIED | 1 | 22.2A | EFFICIENCY | No Recovery Time > 500mA (Io) | 144W | 33μA | 1.2kV | 59A | 0ns | Silicon Carbide Schottky | 1.2kV | 5A | 1 | 301pF @ 1V 1MHz | 1200V | 33μA @ 1200V | 1.8V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH10G65C5XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-idh10g65c5xksa2-datasheets-5814.pdf | TO-220-2 | Lead Free | 2 | 18 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | 89W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 10A | 1.7V | 82A | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 650V | 82A | 0ns | Silicon Carbide Schottky | 1 | 300pF @ 1V 1MHz | 180μA @ 650V | 1.7V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI20-12A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei2012a-datasheets-5818.pdf | 1.2kV | 17A | TO-220-2 | 10.66mm | 22.86mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 78W | 1 | Rectifier Diodes | 150°C | 17A | 17A | 2.15V | 140A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 130A | 250μA | 1.2kV | 140A | 1.2kV | 60 ns | 60 ns | Standard | 1.2kV | 17A | 1 | 1200V | 750μA @ 1200V | 2.15V @ 12A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| APT75DQ120BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt75dq120bg-datasheets-5821.pdf&product=microsemicorporation-apt75dq120bg-5831729 | 1.2kV | 75A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 29 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 75A | 75A | 3.48V | 540A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1.2kV | 540A | 325 ns | 325 ns | Standard | 1.2kV | 75A | 1 | 1.2kV | 1200V | 100μA @ 1200V | 3.1V @ 75A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| GB01SLT12-214 | GeneSiC Semiconductor | $2.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Reverse | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2016 | DO-214AA, SMB | 14 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | GB01SLT12 | 175°C | Single | 1 | Rectifier Diodes | 1A | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | Silicon Carbide Schottky | 1A | 69pF @ 1V 1MHz | 1200V | 10μA @ 1200V | 1.8V @ 1A | 2.5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N1184RA | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | Lead Free | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1184 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 40A | 800A | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800A | 2.5mA | 100V | 800A | 100V | Standard, Reverse Polarity | 100V | 40A | 1 | 2.5mA @ 100V | 1.3V @ 126A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SCS220AJTLL | ROHM Semiconductor | $7.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | EAR99 | PD-CASE | not_compliant | 8541.10.00.80 | e2 | Tin/Copper (Sn/Cu) | 100W | GULL WING | NOT SPECIFIED | SCS220 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 20A | 1.35V | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 71A | 400μA | 650V | 19 ns | Silicon Carbide Schottky | 650V | 20A | 1 | 650V | 730pF @ 1V 1MHz | 400μA @ 600V | 1.55V @ 20A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| QH12TZ600 | Power Integrations |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Qspeed™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | SCHOTTKY | RoHS Compliant | 2011 | /files/powerintegrations-qh12tz600-datasheets-5873.pdf | TO-220-2 | 2 | 4 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 61W | 1 | 12A | 100A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 350A | 600V | 11.6 ns | 11.6 ns | Standard | 600V | 12A | 1 | 250μA @ 600V | 3.1V @ 12A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFH30S60STU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-ffh30s60stu-datasheets-5878.pdf | TO-247-2 | 15.95mm | 21mm | 5.03mm | Lead Free | 2 | 4 Weeks | 6.33g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Single | 1 | Rectifier Diodes | 30A | 2.6V | 300A | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 100μA | 600V | 300A | 600V | 40 ns | 40 ns | Standard | 600V | 30A | 1 | 100μA @ 600V | 2.6V @ 30A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N5712 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | 10 Weeks | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | Schottky | 20V | 75mA | 2pF @ 0V 1MHz | 20V | 150nA @ 16V | 1V @ 35mA | 75mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40DQ60BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt40dq60bg-datasheets-5774.pdf&product=microsemicorporation-apt40dq60bg-5831719 | 600V | 40A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T3 | 40A | 40A | 2V | 320A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 320A | 25 ns | 22 ns | Standard | 600V | 40A | 1 | 600V | 25μA @ 600V | 2.4V @ 40A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| MUR8100EG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 1999 | /files/onsemiconductor-mur8100eg-datasheets-5638.pdf | 1kV | 8A | TO-220-2 | 10.29mm | 9.27mm | 4.82mm | Lead Free | 2 | 15 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | NO | 260 | MUR8100 | 2 | Single | 40 | 1 | Rectifier Diodes | 8A | 8A | 1.8V | 100A | CATHODE | ULTRA FAST RECOVERY POWER | 1kV | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 25μA | 1kV | 100A | 1kV | 100 ns | 100 ns | Standard | 1kV | 8A | 1 | 1000V | 25μA @ 1000V | 1.8V @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| MBR10100G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2004 | /files/onsemiconductor-mbr10100g-datasheets-5663.pdf | 100V | 10A | TO-220-2 | 10.287mm | 15.748mm | 4.826mm | Lead Free | 11 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 1 day ago) | Tin | No | Standard | MBR10100 | Single | TO-220-2 | 10A | 10A | 800mV | 150A | 100μA | 100V | Fast Recovery =< 500ns, > 200mA (Io) | 150A | 100μA | 100V | 150A | Schottky | 100V | 10A | 100V | 100μA @ 100V | 800mV @ 10A | 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4148UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/avxcorporation-cwr09fb105mb-datasheets-1730.pdf | DO-213AA (Glass) | 4pF | 1.7mm | Lead Free | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | Single | 175°C | DO-213AA | 100mA | 1.2V | Small Signal =< 200mA (Io), Any Speed | 2A | 500nA | 75V | 2A | 75V | 5 ns | Standard | 75V | 200mA | 75V | 500nA @ 75V | 1.2V @ 100mA | 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPR20E3/TR7 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-upr20e3tr7-datasheets-5615.pdf | DO-216AA | Lead Free | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | UPR20 | Single | Powermite | 2A | 1.25V | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 20A | 50 ns | Standard | 200V | 2A | 200V | 10μA @ 200V | 1.25V @ 1A | 2A | -55°C~150°C |
