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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| TSN525M60 S3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsn525m60s3g-datasheets-9254.pdf | 8-PowerTDFN | 14 Weeks | 8-PDFN (5x6) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 630mV @ 25A | 25A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV28-150-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-byv28200tr-datasheets-5476.pdf | 3.5A | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | METALLURGICALLY BONDED | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | NO | WIRE | NOT SPECIFIED | BYV28-150 | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 3.5A | 1.1V | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 30ns | Avalanche | 1 | 150V | 1μA @ 150V | 1.1V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| CMSH2-60 TR13 PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmsh220tr13pbfree-datasheets-3941.pdf | DO-214AA, SMB | 14 Weeks | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 60V | Schottky | 50A | 2A | 120pF @ 4V 1MHz | 60V | 500μA @ 60V | 700mV @ 2A | 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V35PW15HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v35pw15hm3i-datasheets-9550.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | SlimDPAK | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1620pF @ 4V 1MHz | 150V | 250μA @ 150V | 1.4V @ 35A | 35A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMMR1F-06 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/centralsemiconductorcorp-cmmr1f06trpbfree-datasheets-9293.pdf | SOD-123F | 17 Weeks | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 600V | 250ns | Standard | 16.5A | 1A | 9pF @ 4V 1MHz | 600V | 1μA @ 600V | 1.3V @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30DL45BP-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-v30dl45bpm3i-datasheets-9324.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 10 Weeks | 550.009098mg | 2 | EAR99 | LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 30A | 570mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 3mA | 45V | Schottky | 45V | 30A | 1 | 45V | 3mA @ 45V | 650mV @ 30A | 30A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| STTH2R02UY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Q Automotive | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stth2r02uy-datasheets-9219.pdf | DO-214AA, SMB | 2 | 11 Weeks | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | AEC-Q101 | DUAL | C BEND | 260 | STTH2R | Single | 30 | 1 | Rectifier Diodes | 2A | 1.2V | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3μA | 200V | 75A | 30 ns | Standard | 200V | 2A | 1 | 2A | 3μA @ 200V | 1V @ 2A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| BYW178-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-byw178tr-datasheets-9333.pdf | 3A | SOD-64, Axial | Lead Free | 2 | 17 Weeks | Unknown | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | 3A | 1.9V | 80A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 1μA | 800V | 80A | 800V | 60 ns | 50 ns | Avalanche | 800V | 3A | 1 | 3A | 1μA @ 800V | 1.9V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| BYV28-100-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2005 | /files/vishaysemiconductordiodesdivision-byv28200tr-datasheets-5476.pdf | 3.5A | SOD-64, Axial | 2 | 17 Weeks | Unknown | 2 | yes | EAR99 | METALLURGICALLY BONDED | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | 3.5A | 1.1V | 90A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90A | 100μA | 110V | 90A | 100V | 30 ns | 30 ns | Avalanche | 100V | 3.5A | 1 | 1μA @ 100V | 1.1V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| MUR240G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-mur240g-datasheets-9349.pdf | 400V | 2A | 2.7mm | DO-204AL, DO-41, Axial | 6.35mm | 5.2mm | 76.2mm | Lead Free | 2 | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | Halogen Free | NO | WIRE | 260 | MUR240 | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 2A | 1.3V | 35A | ISOLATED | ULTRA FAST RECOVERY POWER | 400V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35A | 5μA | 400V | 35A | 400V | 65 ns | 65 ns | Standard | 400V | 2A | 1 | 5μA @ 400V | 1.3V @ 2A | -65°C~175°C | ||||||||||||||||||||||||||
| RGP30M-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-rgp30me354-datasheets-9202.pdf | DO-201AD, Axial | Lead Free | 2 | 22 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP30M | 2 | Single | 1 | Rectifier Diodes | 3A | 1.3V | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125A | 5μA | 1kV | 125A | 1kV | 500 ns | 500 ns | Standard | 1kV | 3A | 1 | 3A | 1000V | 5μA @ 1000V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| TSP12U120S S1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsp12u120ss1g-datasheets-9205.pdf | TO-277, 3-PowerDFN | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 150°C | 30 | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120V | 500μA | TO-277A | Schottky | 150A | 1 | 12A | 120V | 500μA @ 120V | 780mV @ 12A | 12A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TPMR10J S1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | TO-277, 3-PowerDFN | 3 | 8 Weeks | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 175°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | TO-277A | 40ns | Standard | 150A | 1 | 10A | 140pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.8V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT78-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-byt78tr-datasheets-5104.pdf | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | NO | WIRE | 260 | 175°C | 30 | 1 | Rectifier Diodes | E-LALF-W2 | SINGLE | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 5μA | 250ns | Avalanche | 100A | 1 | 3A | 1000V | 5μA @ 1000V | 1.2V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BY228-15TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | Axial | 140°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-by22815tr-datasheets-9278.pdf | 3A | SOD-64, Axial | 17 Weeks | 2 | yes | Silver, Tin | No | e2 | TIN SILVER | 260 | Single | 30 | 3A | 1.5V | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 50A | 5μA | 1.65kV | 50A | 1.2kV | 20 ns | 20 μs | Avalanche | 1.2kV | 3A | 1200V | 5μA @ 1200V | 1.5V @ 5A | 140°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| BYT56M-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-byt56mtr-datasheets-9297.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | Unknown | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | BYT56 | 2 | Single | 30 | 1 | Rectifier Diodes | 3A | 1.4V | 80A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 5μA | 1kV | 80A | 1kV | 100 ns | 100 ns | Avalanche | 1kV | 3A | 1 | 1.5A | 1000V | 5μA @ 1000V | 1.4V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| STTH1003SB-TR |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSP10U45S S1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsp10u45ss1g-datasheets-9182.pdf | TO-277, 3-PowerDFN | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | YES | DUAL | FLAT | 150°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 300μA | TO-277A | Schottky | 275A | 1 | 10A | 45V | 300μA @ 45V | 460mV @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MR851G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2011 | /files/onsemiconductor-mr856rlg-datasheets-0404.pdf | DO-201AD, Axial | 6.35mm | 6.35mm | 76.2mm | Lead Free | 4 Weeks | 4.535924g | 2 | ACTIVE (Last Updated: 1 week ago) | No | Halogen Free | MR851 | Single | Axial | 1.25V | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 100A | 10μA | 100V | 100A | 100V | 300 ns | 300 ns | Standard | 100V | 3A | 100V | 10μA @ 100V | 1.25V @ 3A | 3A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| MUR410G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-mur460rlg-datasheets-0772.pdf | 100V | 4A | 5.3mm | DO-201AA, DO-27, Axial | 6.35mm | 9.5mm | 50.8mm | Lead Free | 2 | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NO | WIRE | 260 | MUR410 | 2 | Single | 40 | 1 | Rectifier Diodes | 4A | 4A | 890mV | 125A | ISOLATED | ULTRA FAST RECOVERY POWER | 100V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125A | 5μA | 100V | 125A | 100V | 35 ns | 35 ns | Standard | 100V | 4A | 1 | 5μA @ 100V | 890mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||
| TSPB20U80S S1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tspb20u80ss1g-datasheets-7714.pdf | TO-277, 3-PowerDFN | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | YES | DUAL | FLAT | 150°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80V | 300μA | Schottky | 200A | 1 | 20A | 80V | 300μA @ 80V | 640mV @ 20A | 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR160G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-mbr150g-datasheets-7848.pdf | 60V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 5.1816mm | 6.35mm | 76.2mm | Lead Free | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 1 day ago) | Tin | No | Standard | Halogen Free | MBR160 | Single | Axial | 1A | 1A | 750mV | 25A | 500μA | 60V | Fast Recovery =< 500ns, > 200mA (Io) | 25A | 500μA | 60V | 25A | Schottky | 60V | 1A | 60V | 500μA @ 60V | 750mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| NRVBS3201T3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-mbrs3201t3g-datasheets-1702.pdf | DO-214AB, SMC | 7.11mm | 2.26mm | 6.1mm | Lead Free | 2 | 6 Weeks | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | DUAL | J BEND | NOT SPECIFIED | MBRS3201 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 3A | FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 1mA | 200V | 100A | 35 ns | Schottky | 200V | 3A | 1 | 3A | 1mA @ 200V | 840mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| MBR1100G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-mbr1100rlg-datasheets-0110.pdf | 100V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 5.1816mm | 6.35mm | 6.35mm | Lead Free | 2 | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) | Standard | Halogen Free | NO | WIRE | 260 | MBR1100 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1A | 790mV | 50A | 500μA | ISOLATED | 100V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 500μA | 100V | 50A | Schottky | 100V | 1A | 500μA @ 100V | 790mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||
| MUR120G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-mur110rlg-datasheets-6834.pdf | 200V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 5.1816mm | 5.2mm | 76.2mm | Lead Free | 2 | 8 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | Halogen Free | NO | WIRE | 260 | MUR120 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1A | 875mV | 35A | ISOLATED | 200V | 87 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35A | 2μA | 200V | 35A | 200V | 35 ns | 35 ns | Standard | 200V | 1A | 2μA @ 200V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||
| MURHD560T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/onsemiconductor-murhd560t4g-datasheets-7638.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | Halogen Free | YES | SINGLE | GULL WING | 260 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 5A | 2.7V | 50A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 10μA | 600V | 50A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 10μA @ 600V | 2.7V @ 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| MUR2100EG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-mur2100eg-datasheets-7901.pdf | 1kV | 2A | 2.7mm | DO-204AL, DO-41, Axial | 6.35mm | 5.2mm | 25.4mm | Lead Free | 2 | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NO | WIRE | 260 | MUR2100 | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 2A | 2.2V | 35A | ISOLATED | ULTRA FAST RECOVERY POWER | 1kV | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35A | 10μA | 1kV | 35A | 1kV | 100 ns | 100 ns | Standard | 1kV | 2A | 1 | 1000V | 10μA @ 1000V | 2.2V @ 2A | -65°C~175°C | |||||||||||||||||||||||||
| MR854G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-mr856rlg-datasheets-0404.pdf | 400V | 3A | 5.3mm | DO-201AA, DO-27, Axial | 9.4996mm | 9.5mm | 63.5mm | Lead Free | 2 | 7 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | Tin | No | Standard | Halogen Free | MR854 | Single | DO-201AD | 3A | 3A | 1.25V | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 100A | 10μA | 400V | 100A | 400V | 300 ns | 300 ns | Standard | 400V | 3A | 400V | 10μA @ 400V | 1.25V @ 3A | 3A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||
| MUR1100EG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-mur1100eg-datasheets-7922.pdf | 800V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 5.1816mm | 5.2mm | 2.7mm | Lead Free | 2 | 6 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | Halogen Free | NO | WIRE | MUR1100 | 2 | Single | 1 | Rectifier Diodes | 1A | 1A | 1.75V | 35A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35A | 10μA | 1kV | 35A | 1kV | 100 ns | 100 ns | Standard | 1kV | 1A | 1000V | 10μA @ 1000V | 1.75V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||
| 1N5404G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-1n5406rlg-datasheets-3530.pdf | 400V | 3A | 5.3mm | DO-201AA, DO-27, Axial | 9.4996mm | 9.5mm | 6.35mm | Lead Free | 6 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | Tin | No | Standard | Halogen Free | 1N5404 | Single | DO-201AD | 3A | 3A | 1V | 200A | 400V | Standard Recovery >500ns, > 200mA (Io) | 200A | 10μA | 400V | 200A | 400V | Standard | 400V | 3A | 400V | 10μA @ 400V | 1V @ 3A | 3A | -65°C~150°C |
